| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 05/13/2008 | US7371281 Silicon carbide single crystal and method and apparatus for producing the same |
| 05/08/2008 | WO2008054240A1 Growth manipulator of a vacuum chamber used for growing semiconductor heterostructures |
| 05/08/2008 | WO2008054239A1 Growth manipulator of a vacuum chamber used for growing semiconductor heterostructures |
| 05/07/2008 | EP1918428A2 Crystalline metal film |
| 05/07/2008 | CN101174667A Oxide films and process for preparing same |
| 05/06/2008 | US7369758 Molecular beam source for use in accumulation of organic thin-films |
| 05/06/2008 | US7368172 epitaxial growth on semiconductor while keeping conformity; increased polarization; thin layer of zirconium oxide and a layer having a simple perovskite structure; ferroelectric |
| 04/30/2008 | EP1916321A1 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate |
| 04/30/2008 | EP1915888A2 Method and composition for adhering materials together |
| 04/29/2008 | US7364644 Silver selenide film stoichiometry and morphology control in sputter deposition |
| 04/29/2008 | US7364617 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| 04/24/2008 | WO2008048628A2 Aligned crystalline semiconducting film on a glass substrate and methods of making |
| 04/24/2008 | WO2007130916A3 A method of ultra-shallow junction formation using si film alloyed with carbon |
| 04/24/2008 | US20080092803 Patterned atomic layer epitaxy |
| 04/22/2008 | US7361956 Semiconductor device having partially insulated field effect transistor (PiFET) and method of fabricating the same |
| 04/22/2008 | US7361222 Device and method for producing single crystals by vapor deposition |
| 04/22/2008 | US7361220 Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method |
| 04/17/2008 | WO2008044744A1 Process for producing single crystal of silicon carbide |
| 04/17/2008 | US20080090390 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/17/2008 | US20080090386 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/17/2008 | US20080090328 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/17/2008 | US20080090327 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/17/2008 | US20080090072 Aligned crystalline semiconducting film on a glass substrate and method of making |
| 04/17/2008 | US20080089831 high carrier concentration and low resistivity |
| 04/16/2008 | CN101163824A Method of and system for forming sic crystals having spatially uniform doping impurities |
| 04/16/2008 | CN101163815A Source, an arrangement for installing a source, and a method for installing and removing a source |
| 04/16/2008 | CN100382244C Buffer structure for modifying a silicon substrate |
| 04/15/2008 | US7358159 Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device |
| 04/15/2008 | US7358112 Method of growing a semiconductor layer |
| 04/15/2008 | US7357838 Relaxed silicon germanium substrate with low defect density |
| 04/15/2008 | US7357837 GaN single crystal substrate and method of making the same |
| 04/10/2008 | WO2008041728A1 Seed crystal fixing device |
| 04/10/2008 | US20080083366 Micropipe-free silicon carbide and related method of manufacture |
| 04/09/2008 | EP1154049B1 Method of manufacturing single-crystal silicon carbide |
| 04/09/2008 | CN100380588C Preparation method of coating of gallium nitride |
| 04/09/2008 | CN100379901C III-V nitride substrate boule and its manufacturing method and use |
| 04/08/2008 | US7355216 Fluidic nanotubes and devices |
| 04/08/2008 | US7354477 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
| 04/03/2008 | WO2008037960A1 Valve assembly for effusion cell |
| 04/03/2008 | WO2008037958A1 Effusion and cracking cell |
| 04/01/2008 | US7351993 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
| 04/01/2008 | US7351286 One hundred millimeter single crystal silicon carbide wafer |
| 04/01/2008 | US7351285 Method and system for forming a variable thickness seed layer |
| 03/27/2008 | US20080072819 Metal oxide films |
| 03/27/2008 | US20080072818 Growing a desired portion of the nanowire, growing a sacrificial portion of the nanowire that is doped differently than the desired portion, differentially removing the sacrificial portion, and removing a growth stub from the desired portion, especially by etching |
| 03/25/2008 | CA2406347C Gan substrate, method of growing gan and method of producing gan substrate |
| 03/20/2008 | US20080069755 Method for Manufacturing Polycrystalline Silicon, and Polycrystalline Silicon for Solar Cells Manufactured by the Method |
| 03/19/2008 | CN201037164Y Source material evaporator |
| 03/19/2008 | CN101144180A Automatic pressure control device for controlling gas pressure in vacuum growth camber |
| 03/19/2008 | CN101144179A Device for single-crystal growth by physical gas phase transmission precipitation method |
| 03/13/2008 | WO2007081492A9 High growth rate methods of producing high-quality diamonds |
| 03/13/2008 | US20080060573 APPARATUS FOR FABRICATION OF GaN BULK SINGLE CRYSTAL AND FABRICATION METHOD OF GaN SINGLE CRYSTAL INGOT USING THE SAME |
| 03/13/2008 | CA2662734A1 Process for depositing a thin film of a metal alloy on a substrate, and a metal alloy in thin-film form |
| 03/12/2008 | EP1583858A4 Sacrificial template method of fabricating a nanotube |
| 03/11/2008 | US7341929 Method to fabricate patterned strain-relaxed SiGe epitaxial with threading dislocation density control |
| 03/11/2008 | US7341883 Silicon germanium semiconductive alloy and method of fabricating same |
| 03/06/2008 | DE112006001204T5 Verfahren und Vorrichtung zum Erzeugen von Siliciumkarbidkristallen Method and apparatus for producing silicon carbide crystals |
| 03/05/2008 | CN101135059A Method for preparing nano zinc oxide whisker |
| 03/04/2008 | US7339219 Capacitance device including a perovskite film having (001) orientation |
| 02/28/2008 | US20080050894 Preparation method of a coating of gallium nitride |
| 02/28/2008 | US20080048207 Preparation method of a coating of gallium nitride |
| 02/27/2008 | EP1315682B1 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 02/27/2008 | CN100371509C ZnO nano crystal column/nano crystal filament composite structure product and its preparing process |
| 02/26/2008 | US7335283 Production method for composite oxide thin film and device therefor and composite oxide film produced thereby |
| 02/26/2008 | US7335259 Growth of single crystal nanowires |
| 02/20/2008 | EP1889953A1 Process for producing silicon carbide single crystal |
| 02/20/2008 | EP1888821A1 Low basal plane dislocation bulk grown sic wafers |
| 02/20/2008 | CN101128911A System and process for high-density, low-energy plasma enhanced vapor phase epitaxy |
| 02/19/2008 | US7332030 Method of treating a part in order to alter at least one of the properties thereof |
| 02/14/2008 | WO2007081492A3 High growth rate methods of producing high-quality diamonds |
| 02/14/2008 | US20080035052 Method for manufacturing a semiconductor substrate |
| 02/13/2008 | EP1887109A2 Aluminum nitride single crystal |
| 02/13/2008 | CN101122048A Epitaxy strontium lead titanate film with LiNiO2 cushioning layer |
| 02/13/2008 | CN101121108A Vacuum processing apparatus |
| 02/12/2008 | US7329317 Method for producing silicon wafer |
| 02/12/2008 | CA2467174C Differential stress reduction in thin films |
| 02/07/2008 | WO2007107757B1 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials |
| 02/07/2008 | US20080029021 Method for forming pecvd silicon nitride film |
| 02/06/2008 | EP1883719A1 A bulk, free-standing cubic iii-n substrate and a method for forming same |
| 02/06/2008 | CN100367509C High-resisting silicon carbide substrate for semiconductor devices with high breakdown voltage |
| 02/05/2008 | US7326652 Atomic layer deposition using photo-enhanced bond reconfiguration |
| 02/05/2008 | US7326293 Patterned atomic layer epitaxy |
| 01/31/2008 | US20080026234 Epitaxial oxide films via nitride conversion |
| 01/31/2008 | US20080022925 Method for marking a crystalline material using cathodoluminescence |
| 01/29/2008 | US7323764 Buffer structure for modifying a silicon substrate |
| 01/29/2008 | US7323356 Growing a base thin film on a single-crystal substrate; depositing amorphous or polycrystalline LnCuOX thin film to form laminate; and annealing film at 500 degrees C. or more in a vacuum environment; light-emitting diodes, semiconductor leasers, filed-effect transistors, hetero-bipolar transistors |
| 01/29/2008 | US7323249 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 01/29/2008 | US7323051 One hundred millimeter single crystal silicon carbide wafer |
| 01/24/2008 | US20080020212 Seed crystal consisting of silicon carbide carbide single crystal and method for producing ingot using the same |
| 01/24/2008 | US20080019897 Phosphorus Effusion Cell Arrangement and Method for Producing Molecular Phosphorus |
| 01/24/2008 | US20080017101 Germanium Deposition |
| 01/24/2008 | US20080017100 Method for fabricating single-crystal GaN based substrate |
| 01/24/2008 | US20080017099 Crystal growth method and apparatus |
| 01/23/2008 | EP1268882A4 Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide |
| 01/17/2008 | WO2008008407A1 Wide bandgap semiconductor materials |
| 01/17/2008 | US20080011224 Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal |
| 01/17/2008 | US20080011223 Solid solution wide bandgap semiconductor materials |
| 01/16/2008 | CN101106092A Making method for IV-VI semiconductor single crystal film and the heterogeneous structure |
| 01/10/2008 | WO2008004657A1 p-TYPE ZINC OXIDE THIN FILM AND METHOD FOR FORMING THE SAME |
| 01/10/2008 | WO2007131040A3 Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |