Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
09/2008
09/23/2008US7427556 Method to planarize and reduce defect density of silicon germanium
09/18/2008US20080223287 Plasma enhanced ALD process for copper alloy seed layers
09/18/2008US20080223286 Method for producing a semiconductor crystal
09/18/2008DE102007012370A1 Bedampfungseinrichtung und Bedampfungsverfahren zur Molekularstrahlbedampfung und Molekularstrahlepitaxie Vaporization and vapor deposition and molecular beam epitaxy for Molekularstrahlbedampfung
09/17/2008EP1970474A1 Vaporisation device and vaporisation process for molecular beam vaporisation and molecular beam epitaxy
09/17/2008CN100419134C Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
09/16/2008US7425237 Method for depositing a material on a substrate wafer
09/11/2008US20080220232 high resistivity (high electrical resistance), high quality, large size SiC single crystal and SiC single crystal wafer with lower amounts of vanadium impurity (dopant)
09/10/2008CN101263248A Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path
09/10/2008CN101260566A Organic super crystal lattice material composed of disk-shaped molecule organic semiconductor and preparation method thereof
09/10/2008CN101260563A Seed crystal free vertical gas phase growth method for thallium bromide single-crystal
09/10/2008CN100418246C Doped organic semiconductor materials and process for their preparation
09/09/2008US7422634 Three inch silicon carbide wafer with low warp, bow, and TTV
09/09/2008CA2284475C Growth of gan on sapphire with mse grown buffer layer
09/04/2008WO2008089181A3 Guided diameter sic sublimation growth with multi-layer growth guide
09/04/2008US20080213158 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
09/04/2008US20080210921 Silver selenide film stoichiometry and morphology control in sputter deposition
09/04/2008US20080210157 Systems and methods for forming strontium-and/or barium-containing layers
09/03/2008EP1259662A4 Method and apparatus for growing low defect density silicon carbide and resulting material
09/03/2008CN101255597A Crystal growth method performing physical gas-phase transmission by using curved seed crystal
08/2008
08/28/2008WO2008102358A2 Group-iii metal nitride and preparation thereof
08/28/2008US20080202409 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
08/28/2008CA2679024A1 Group-iii metal nitride and preparation thereof
08/27/2008EP1960570A2 Large aluminum nitride crystals with reduced defects and methods of making them
08/27/2008CN100414004C Device and method for producing single crystals by vapor deposition
08/21/2008US20080197339 Silicon chip and nanolever comprise multiwalled carbon nanotubes and atom reservoir and indium nanoparticle ram
08/20/2008EP1435091A4 Magnetic material structures, devices and methods
08/20/2008EP1264011A4 Iii-v nitride substrate boule and method of making and using the same
08/14/2008US20080193366 Film of N Type (100) Oriented Single Crystal Diamond Semiconductor Doped with Phosphorous Atoms, and a Method of Producing the Same
08/13/2008EP1956112A2 System and method for reducing particles in epitaxial reactors
08/13/2008CN101241883A Preparation method of a coating of gallium nitride
08/07/2008WO2008039914A3 Sic single crystals with reduced dislocation density grown by step-wise periodic perturbation technique
08/07/2008US20080188065 Preparation method of a coating of gallium nitride
08/07/2008US20080185611 Preparation method of a coating of gallium nitride
08/07/2008DE19848298B4 Hochtemperaturstabile Halbleitersubstratscheibe großen Durchmessers und Verfahren zu ihrer Herstellung High temperature stable semiconductor substrate disc of large diameter and methods for their preparation
08/06/2008CN101236905A A method for making IV-VI sector semiconductor single crystal film on CdZnTe underlay
08/06/2008CN101235536A Method for growing Na doping p type ZnO crystal thin film
08/05/2008CA2312790C Growth of very uniform silicon carbide epitaxial layers
07/2008
07/31/2008WO2008028981A3 Process for depositing a thin film of a metal alloy on a substrate, and a metal alloy in thin-film form
07/31/2008WO2007089886A3 Biaxially oriented film on flexible polymeric substrate
07/30/2008CN100406620C Li-doped p-Zn1-xMgxO crystal film and method for preparing same
07/29/2008CA2368380C Method for growing an .alpha.-sic bulk single crystal
07/24/2008WO2008089181A2 Guided diameter sic sublimation growth with multi-layer growth guide
07/24/2008WO2008088838A1 Defect reduction in seeded aluminum nitride crystal growth
07/24/2008WO2008044050A3 Nanostructures
07/24/2008US20080176386 Method of producing gallium nitride (GaN) independent substrate, method of producing GaN crystal body, and method of producing GaN substrate
07/23/2008EP1945837A2 Chemically attached diamondoids for cvd diamond film nucleation
07/23/2008CN101228013A Composition for adhering materials together
07/23/2008CN101225543A Method for preparing monocrystalline silicon thin film and components thereof
07/22/2008US7402504 Epitaxial semiconductor deposition methods and structures
07/22/2008US7402206 Method of synthesizing a compound of the formula Mn+1AXn, film of the compound and its use
07/16/2008CN101220521A Split type tantalum crucible and manufacturing method thereof
07/16/2008CN101220508A Rod like ZnO monocrystal material and preparation thereof
07/16/2008CN101220504A Method and apparatus for growing silicon carbide crystals
07/16/2008CN100402421C Tough diamonds and method of making thereof
07/15/2008US7399356 Method for preparation of ferroelectric single crystal film structure using deposition method
07/10/2008US20080163814 CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES
07/10/2008DE112006002133T5 ZnO-Kristall, sein Aufwuchsverfahren und ein Herstellungsverfahren für eine Leuchtvorrichtung ZnO crystal, growth method and be a manufacturing method for a light emitting device
07/09/2008CN100401470C Method for controlling and removing fog-shaped micro-defect of silicon gas-phase epitaxial layer
07/08/2008US7396411 Apparatus for manufacturing single crystal
07/08/2008CA2346290C Production of bulk single crystals of silicon carbide
07/03/2008US20080156256 System and method for producing synthetic diamond
07/03/2008US20080156255 Apparatus And Process For Crystal Growth
07/03/2008DE112006002430T5 Verfahren zur Herstellung von Super-Gittern unter Verwendung von abwechselnden Hoch und Niedrig-Temperatur-Schichten zum Sperren von parasitären Strompfaden A process for the production of super-lattices using alternating high and low-temperature layers to block parasitic current paths
07/02/2008EP1415012A4 Process and apparatus for producing crystalline thin film buffer layers and structures having biaxial texture
07/02/2008CN101210347A Method for preparing organic compound single-crystal nano structure
07/01/2008US7393411 β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
07/01/2008US7393409 Method for making large-volume CaF2 single cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof
06/2008
06/26/2008US20080152903 System and Process for High-Density, Low-Energy Plasma Enhanced Vapor Phase Epitaxy
06/26/2008US20080149020 Device and method to producing single crystals by vapour deposition
06/25/2008CN101207013A Method and apparatus for heating a substrate
06/25/2008CN101207012A Method and apparatus for heating a substrate
06/19/2008WO2008073930A1 Formation of epitaxial layers containing silicon and carbon
06/19/2008US20080145989 SEMICONDUCTOR DEVICE HAVING PARTIALLY INSULATED FIELD EFFECT TRANSISTOR (PiFET) AND METHOD OF FABRICATING THE SAME
06/18/2008EP1933372A1 Process for producing epitaxial wafer and epitaxial wafer produced therefrom
06/18/2008CN101200808A Method for developing zinc oxide crystallite by chemical gas-phase transmitting process
06/17/2008US7387680 Method and apparatus for the production of silicon carbide crystals
06/17/2008CA2346308C Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys
06/12/2008WO2008068009A1 A universal method for selective area growth of organic molecules by vapor deposition
06/12/2008US20080134975 Thermally isolated cryopanel for vacuum deposition systems
06/12/2008US20080134961 Single-crystal organic semiconductor materials and approaches therefor
06/12/2008US20080134960 Diamond semiconductor element and process for producing the same
06/12/2008US20080134959 Diamond semiconductor element and process for producing the same
06/12/2008US20080134957 Powder metallurgy crucible for aluminum nitride crystal growth
06/11/2008CN100393921C Method for producing grain sizes even distributed antimony trioxide in single crystal type, and equipment
06/10/2008US7384481 Method of forming a rare-earth dielectric layer
06/05/2008US20080127884 Bulk single crystal gallium nitride and method of making same
06/03/2008US7381267 Heteroatomic single-crystal layers
05/2008
05/29/2008WO2008064077A2 Methods for high volume manufacture of group iii-v semiconductor materials
05/29/2008WO2007149487A8 Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth
05/29/2008US20080124460 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby
05/28/2008EP1925697A1 AlN CRYSTAL AND METHOD FOR GROWING THE SAME, AND AlN CRYSTAL SUBSTRATE
05/28/2008CN101187061A Method for doping Sb for growing Zn1-x MgxO crystal film
05/28/2008CN101187057A Surfactant method for preparing surface smooth high quality zinc oxide epitaxial film
05/28/2008CN100390328C Crucible for preparing crystal by high-temperature gas phase process and use method thereof
05/27/2008US7377978 Method for producing silicon epitaxial wafer and silicon epitaxial wafer
05/20/2008US7374817 Topological crystal of transition metal chalcogenide and method of forming the same
05/15/2008WO2008057183A1 Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth
05/15/2008US20080110394 Semiconductor Single Crystal Production Device And Producing Method Therefor
05/14/2008CN100388424C Molecular beam epitaxy growth apparatus and method of controlling same
1 ... 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 ... 52