| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
|---|
| 03/11/2009 | CN101381891A Method for preparing MgZnO single crystal film |
| 03/11/2009 | CN100468661C Making method for IV-VI semiconductor single crystal film and the heterogeneous structure |
| 03/10/2009 | USRE40647 Method of producing plasma display panel with protective layer of an alkaline earth oxide |
| 03/10/2009 | US7501022 Methods of fabricating silicon carbide crystals |
| 03/05/2009 | WO2009028974A1 Method for the production of semiconductor ribbons from a gaseous feedstock |
| 03/05/2009 | WO2008102358A3 Group-iii metal nitride and preparation thereof |
| 03/05/2009 | US20090056374 Gemstone Facet Configuration |
| 02/26/2009 | US20090053125 Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Crystals |
| 02/26/2009 | US20090050935 Silicon-Germanium Hydrides and Methods for Making and Using Same |
| 02/25/2009 | CN101372760A Preparation of glowing oxygen doped gallium arsenide polycrystalline film |
| 02/18/2009 | EP2024537A1 Method for producing silicon carbide single crystal |
| 02/18/2009 | EP1769106B1 Phosphorus effusion cell arrangement and method for producing molecular phosphorus |
| 02/18/2009 | CN101368288A P type ZnO thin film production method |
| 02/12/2009 | WO2009021199A1 Production of bulk silicon carbide with hot-filament chemical vapor deposition |
| 02/12/2009 | US20090038540 Method for Manufacturing Epitaxial Wafer and Epitaxial Wafer Manufactured by this Method |
| 02/11/2009 | EP2022084A2 Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
| 02/10/2009 | US7488386 Atomic layer deposition methods and chemical vapor deposition methods |
| 02/05/2009 | DE102008029784A1 Einkristalline Metallnanostrukturen aus Binärlegierung und Verfahren zu deren Herstellung Metal monocrystalline nanostructures binary alloy and process for their preparation |
| 02/05/2009 | CA2693615A1 High temperature evaporator cell having parallel-connected heating zones |
| 02/04/2009 | CN100459219C Cesium dispensers and process for use thereof |
| 02/04/2009 | CN100457609C Manufacturing method and application of single wall carbon nano tube |
| 01/28/2009 | CN101353816A Growth method of tungsten oxide pencil-shaped nanostructured array |
| 01/27/2009 | US7482068 n-type or a p-type conductivity; drift zone of high voltage power devices; low cost; swiches |
| 01/27/2009 | US7481881 Method of manufacturing GaN crystal substrate |
| 01/27/2009 | US7481879 Diamond single crystal substrate manufacturing method and diamond single crystal substrate |
| 01/22/2009 | DE10250915B4 Verfahren zur Abscheidung eines Materials auf einem Substratwafer A method for depositing a material on a substrate wafer |
| 01/21/2009 | CN101351579A Method for growing III nitride single crystal |
| 01/20/2009 | US7479187 Method for manufacturing silicon epitaxial wafer |
| 01/14/2009 | EP1639158A4 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal |
| 01/14/2009 | CN100451184C Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
| 01/08/2009 | US20090007841 Vapor-phase growing apparatus and vapor-phase growing method |
| 01/06/2009 | US7473925 P-type group II-VI semiconductor compounds |
| 01/06/2009 | US7473315 AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate |
| 01/01/2009 | US20090001329 Rare earth-oxides, rare earth-nitrides, rare earth-phosphies, and ternary alloys with silicon |
| 12/31/2008 | WO2009003100A1 Fabrication of sic substrates with low warp and bow |
| 12/31/2008 | EP2007933A1 Methods for controllable doping of aluminum nitride bulk crystals |
| 12/30/2008 | US7470970 Prepared by making use of orientation (plane) dependence of the oxygen doping to GaN; non-C-plane growth enables the growing GaN crystal to accept oxygen effectively; for producing light emitting diodes, laser diodes or other electronic devices of groups 3 and 5 nitride semiconductors |
| 12/24/2008 | CN101328615A Growth method of CdTe nanorod by catalyst assistant vacuum heat evaporation |
| 12/24/2008 | CN101328611A Low field super large magnetoresistance manganese oxide epitaxial film and preparation thereof |
| 12/24/2008 | CN101328609A Method for preparing tin doping zinc oxide nanowire by vapor deposition |
| 12/18/2008 | US20080311024 Diamond single crystal substrate manufacturing method and diamond single crystal substrate |
| 12/18/2008 | US20080308036 Vapor-phase growth apparatus and vapor-phase growth method |
| 12/17/2008 | CN101323982A Preparation of high quality cubic boron nitride film |
| 12/17/2008 | CN101323970A Tubular furnace and method for changing growth substrate or source material position using the same |
| 12/16/2008 | US7465499 Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
| 12/11/2008 | US20080302298 Highly Uniform Group III Nitride Epitaxial Layers on 100 Millimeter Diameter Silicon Carbide Substrates |
| 12/10/2008 | EP2000567A2 Method for growing iii nitride single crystal |
| 12/10/2008 | EP1097251B1 System and method for reducing particles in epitaxial reactors |
| 12/10/2008 | CN101319387A Preparation method of high-temperature superconductor nano-structured array |
| 12/10/2008 | CN101319384A Method for Na-doped growing p type Zn(1-x)MgxO crystal thin film |
| 12/10/2008 | CN101319362A Method of preparing polysilicon film and preparing system |
| 12/10/2008 | CN101319354A Purification process for single-wall nano-carbon tube film |
| 12/04/2008 | WO2007087589A3 Silicon carbide formation by alternating pulses |
| 12/03/2008 | EP1997125A2 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials |
| 12/03/2008 | CN100440436C Vapor-phase growth method |
| 12/03/2008 | CN100439554C Method of synthesizing a compound of the formula Mn*Axn, film of the compound and its use |
| 11/27/2008 | WO2008142395A1 Apparatus for crystal growth |
| 11/27/2008 | US20080289570 Process for Producing Silicon Carbide Single Crystal |
| 11/26/2008 | EP1995796A2 Single crystal GaN substrate and laser diode produced thereon |
| 11/26/2008 | CN101311386A Method for preparing single crystal zinc blende nano-wire |
| 11/26/2008 | CN101311374A Yttrium-iron-garnet film structure and preparation method |
| 11/26/2008 | CN101311366A Process for preparing manganic manganous oxide nanometer wire by vapor deposition |
| 11/26/2008 | CN101311299A Process for measuring temperature of thermal couple when source material melting in beam source furnace |
| 11/26/2008 | CN101311298A Process for measuring source material in site in source furnace |
| 11/26/2008 | CN101311295A Device for preparing single wall carbon nanotube film by arc-discharge method |
| 11/26/2008 | CN100437905C Formation of lattice-tuning semiconductor substrates |
| 11/25/2008 | US7455729 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density |
| 11/20/2008 | US20080282983 High Temperature Vacuum Evaporation Apparatus |
| 11/20/2008 | US20080282970 Cyclopentadienyl Type Hafnium and Zirconium Precursors and Use Thereof in Atomic Layer Deposition |
| 11/19/2008 | EP1511884B1 Formation of single-crystal silicon carbide |
| 11/19/2008 | CN101307498A Iii-v nitride substrate wafer and its manufacture method and uses |
| 11/19/2008 | CN100435268C Single crystal gallium nitride substrate, method for growing single crystal gallium nitride and method for mfg. substrate thereof |
| 11/19/2008 | CN100434573C Method for developing aluminum nitride crystal in large size through flow of plasma flame |
| 11/13/2008 | US20080276860 Cross flow apparatus and method for hydride vapor phase deposition |
| 11/12/2008 | EP1990809A1 Process for producing superconducting thin-film material, superconducting equipment and superconducting thin-film material |
| 11/12/2008 | CN100432302C Sb doped P-type ZnO crystal film and preparation method thereof |
| 11/06/2008 | WO2008134459A1 Method, system, and apparatus for doping and for multi-chamber high-throughput solid-phase epitaxy deposition process |
| 11/06/2008 | US20080271667 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same |
| 11/06/2008 | DE10341806B4 Verfahren zur Herstellung einer epitaktischen Silizium-Germanium Basisschicht eines heterobipolaren pnp Transistors A process for producing an epitaxial silicon-germanium base layer of a PNP transistor heterobipolaren |
| 11/05/2008 | EP1987171A2 Crucible eliminating line of sight between a source material and a target |
| 11/05/2008 | CN100431101C Light auxiliary MBE system, and method for developing ZnO monocrystal film |
| 10/30/2008 | WO2007095143A3 Crucible eliminating line of sight between a source material and a target |
| 10/30/2008 | US20080265264 Beta-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method |
| 10/29/2008 | EP1984544A2 Silicon carbide formation by alternating pulses |
| 10/23/2008 | WO2008127807A1 Systems and methods of laser texturing of material surfaces and their applications |
| 10/23/2008 | US20080257256 BULK GaN AND AlGaN SINGLE CRYSTALS |
| 10/23/2008 | DE10344986B4 Verfahren zur Erzeugung verbesserter heteroepitaktischer gewachsener Siliziumkarbidschichten auf Siliziumsubstraten A method for generating improved heteroepitaxial grown on silicon substrates Siliziumkarbidschichten |
| 10/21/2008 | US7439197 Method of fabricating a capacitor |
| 10/16/2008 | WO2008123545A1 ZnO THIN FILM |
| 10/16/2008 | WO2008123141A1 Compound semiconductor laminate, process for producing the compound semiconductor laminate, and semiconductor device |
| 10/16/2008 | WO2007111967A3 Chemically attached diamondoids for cvd diamond film nucleation |
| 10/09/2008 | US20080248291 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 10/08/2008 | CN201128779Y Preparing device for monocrystalline silicon film/ polysilicon film and components thereof |
| 10/08/2008 | CN101283122A ZnO crystal, method for growing the crystal, and method for manufacture of light-emitting element |
| 10/08/2008 | CN100424819C A method for orientation growth of VO2 film of pulse laser deposition Si base |
| 10/02/2008 | US20080241049 A single crystal diamond grown by microwave plasma chemical vapor deposition, annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa; enhanced optical characteristics |
| 10/01/2008 | EP1198847B1 Method of making a multi-layer superconductor article |
| 10/01/2008 | CN101275271A Methods for growing ZnO monocrystalline film and microcrystalline film, and p type doping of ZnO |
| 09/25/2008 | WO2008028981B1 Process for depositing a thin film of a metal alloy on a substrate, and a metal alloy in thin-film form |
| 09/24/2008 | CN100420569C Free-standing (Al, Ga, In)N and parting method for forming same |