| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 08/13/2009 | US20090199763 Process for the production of gan or aigan crystals |
| 08/12/2009 | CN101506959A Method for producing zinc oxide semiconductor crystal |
| 08/12/2009 | CN100526522C Epitaxy strontium lead titanate film with LiNiO2 cushioning layer |
| 08/11/2009 | US7572332 Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications |
| 08/06/2009 | WO2009096123A1 METHOD FOR GROWING AlxGa1-xN SINGLE CRYSTAL |
| 08/05/2009 | CN101498036A Controllable pressure pen ejecting apparatus with automatic alarming function for epitaxial production |
| 08/05/2009 | CN101498035A Controllable pressure pen ejecting apparatus with self-locking function for epitaxial production |
| 08/05/2009 | CN101498034A Preparation of transient metal doped nano zinc oxide crystal whisker |
| 08/05/2009 | CN100523315C Split type tantalum crucible and manufacturing method thereof |
| 08/05/2009 | CN100523275C Material evaporation chamber with differential vacuum pumping |
| 07/29/2009 | EP2082074A2 Process for depositing a thin film of a metal alloy on a substrate, and a metal alloy in thin-film form |
| 07/29/2009 | CN100519831C Annealing single crystal chemical vapor depositon diamonds |
| 07/23/2009 | WO2009090831A1 Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal |
| 07/22/2009 | CN100517571C 3-5 group compound semiconductor and method for preparation thereof |
| 07/21/2009 | US7563321 Process for producing high quality large size silicon carbide crystals |
| 07/16/2009 | DE212007000083U1 Züchtungsmanipulator Breeding manipulator |
| 07/15/2009 | CN101481817A Growth method of nonpolar ZnO crystal film |
| 07/15/2009 | CN100513629C Molecular beam source apparatus for film deposition and method for depositing film by molecular beam |
| 07/09/2009 | US20090176114 Base Substrate for Epitaxial Diamond Film, Method for Producing the Base Substrate for Epitaxial Diamond Film, Epitaxial Diamond Film produced With the Base Substrate for Epitaxial Diamond Film, and Method for Producing the Epitaxial Diamond Film |
| 07/02/2009 | WO2009079777A1 Gallium arsenide semiconductor material incorporating bismuth and process for epitaxial growth |
| 07/02/2009 | US20090169814 Method for manufacturing diamond monocrystal having a thin film, and diamond monocrystal having a thin film |
| 07/02/2009 | US20090169459 Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth |
| 07/02/2009 | US20090167139 Phosphorus-doped diamond film allowing significantly reduced electron emission voltage, method for producing the same, and electron source using the same |
| 07/02/2009 | DE3907799A1 Hochgradig breitbandige Signalverarbeitungsvorrichtung aus supraleitendem Material, Anwendung auf Mikrowellenschaltung und Verfahren zur Herstellung einer solchen Vorrichtung Highly wideband signal processing apparatus of superconducting material, application to the microwave circuit and method for manufacturing such a device |
| 07/01/2009 | EP2075356A1 Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal |
| 06/30/2009 | US7553369 Method of altering the properties of a thin film and substrate implementing said method |
| 06/25/2009 | WO2009015796A3 High temperature evaporator cell having parallel-connected heating zones |
| 06/25/2009 | US20090162673 Cubic nitride templates |
| 06/25/2009 | US20090158994 Method for growing group iii nitride semiconductor crystal and growing device for group iii nitride semiconductor crystal |
| 06/25/2009 | DE212007000078U1 Züchtungsmanipulator Breeding manipulator |
| 06/25/2009 | CA2646139A1 Method for growing group iii nitride semiconductor crystal and growing device for group iii nitride semiconductor crystal |
| 06/24/2009 | EP2072646A1 Process for producing single crystal of silicon carbide |
| 06/18/2009 | WO2009075935A1 Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes |
| 06/18/2009 | DE112007001605T5 Zinkoxiddünnfilm vom p-Typ und Verfahren zur Ausbildung desselben The same p-type zinc oxide thin film and method of forming |
| 06/17/2009 | EP2071061A1 Seed crystal fixing device |
| 06/17/2009 | EP2069557A2 Sic single crystals with reduced dislocation density grown by step-wise periodic perturbation technique |
| 06/11/2009 | WO2009072378A1 Aln crystal and method for growing the same |
| 06/11/2009 | WO2009039398A8 Gallium nitride bulk crystals and their growth method |
| 06/11/2009 | US20090148976 Method for fabricating semiconductor epitaxial layers using metal islands |
| 06/11/2009 | CA2675124A1 A1n crystal and method of its growth |
| 06/10/2009 | EP2067884A1 III Nitride crystal substrate, and light-emitting device and method of its manufacture |
| 06/10/2009 | DE10247017B4 SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm und Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist SiC single crystal, methods for producing an SiC single crystal, SiC wafer with an epitaxial film and method for manufacturing a SiC wafer having an epitaxial film |
| 06/09/2009 | US7544273 Deposition methods and stacked film formed thereby |
| 06/09/2009 | US7544249 Large-diameter SiC wafer and manufacturing method thereof |
| 06/04/2009 | US20090139448 Vapor phase growth apparatus ans vapor phase growth method |
| 06/03/2009 | EP1987171A4 Crucible eliminating line of sight between a source material and a target |
| 05/28/2009 | WO2009066663A1 Polygonal columnar material of aluminum nitride single crystal, and process for producing plate-like aluminum nitride single crystal using the polygonal columnar material |
| 05/27/2009 | CN101440517A Method for dynamically controlling high temperature furnace inner pressure |
| 05/27/2009 | CN101440516A Direct doping method for zinc oxide single crystal growth process |
| 05/21/2009 | US20090127566 Method of Selectively Forming Atomically Flat Plane on Diamond Surface, Diamond Substrate Produced by The Method, and Semiconductor Device Using The Same |
| 05/21/2009 | US20090126624 Method of Producing silicon carbide epitaxial layer |
| 05/20/2009 | EP2060663A1 Oxygen-doped N-type gallium nitride single crystal substrate |
| 05/20/2009 | EP2060662A2 MBE device and method of its operation |
| 05/20/2009 | EP2059946A1 Micropipe-free silicon carbide and related method of manufacture |
| 05/20/2009 | CN101438391A Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
| 05/19/2009 | US7534412 Large-volume CaF2 single crystals with reduced scattering and improved laser stability, and uses thereof |
| 05/19/2009 | US7534310 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate |
| 05/14/2009 | WO2009061599A1 Methods of selectively depositing silicon-containing films |
| 05/14/2009 | WO2009060561A1 Single crystal growing apparatus |
| 05/14/2009 | WO2009042363A3 Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom |
| 05/12/2009 | CA2344342C Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy |
| 05/07/2009 | WO2006135662A3 Perovskite-based thin film structures on miscut semiconductor substrates |
| 05/07/2009 | US20090114887 Bulk, free-standing cubic III-N substrate and a method for forming same. |
| 05/07/2009 | US20090114148 Method of producing epitaxial layers with low basal plane dislocation concentrations |
| 05/07/2009 | US20090114146 Method for Manufacturing Semiconductor Device and Substrate Processing Apparatus |
| 05/06/2009 | CN101426966A Chemically attached diamondoids for CVD diamond film nucleation |
| 05/06/2009 | CN101426965A Production of bulk single crystals of silicon carbide |
| 04/30/2009 | WO2006023699A3 Photonic crystal, conjugated polymers suitable for photonic crystals, and a method for synthesizing conjugated polymers |
| 04/30/2009 | US20090108407 Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 04/29/2009 | CN101418467A Method for preparing silicon nano crystal by using electron-beam evaporation equipment |
| 04/29/2009 | CN100483739C Semi-insulating silicon carbide without vanadium domination |
| 04/23/2009 | US20090104758 Gallium nitride materials and methods |
| 04/22/2009 | EP2050842A1 Method of producing ultra-thin ferrite films |
| 04/22/2009 | CN101415864A Large aluminum nitride crystals with reduced defects and methods of making them |
| 04/22/2009 | CN100480437C Method for preparing oriented growth dielectric-constant adjustable strontium lead titanate film |
| 04/21/2009 | US7521282 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/15/2009 | EP2047013A1 Wide bandgap semiconductor materials |
| 04/15/2009 | CN101410950A Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials |
| 04/14/2009 | US7517720 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/09/2009 | WO2009046261A1 Method for depositing group iii/v compounds |
| 04/09/2009 | WO2009043639A1 Material comprising finely layered heterostructures of oxide materials |
| 04/09/2009 | US20090092810 Fabrication of soi with gettering layer |
| 04/08/2009 | EP2045838A1 Method for producing zinc oxide semiconductor crystal |
| 04/08/2009 | CN100476044C Phosphorus effusion cell arrangement and method for producing molecular phosphorus |
| 04/02/2009 | WO2009041631A1 Zno semiconductor and zno semiconductor element |
| 04/02/2009 | US20090084310 Method for manufacturing single crystal nano-structures capable of controlling morphology and device for manufacturing nano-structures |
| 04/02/2009 | DE102008010041A1 Layer deposition apparatus, e.g. for epitaxial deposition of compound semiconductor layers, has segmented process gas enclosure in which substrate is moved relative to partition |
| 03/26/2009 | WO2009039398A1 Gallium nitride bulk crystals and their growth method |
| 03/26/2009 | US20090081110 Gallium nitride-based material and method of manufacturing the same |
| 03/25/2009 | EP2039812A1 METHOD FOR GROWING AlxGa1-xN CRYSTAL, AND AlxGa1-xN CRYSTAL SUBSTRATE |
| 03/25/2009 | EP2000567A9 Method for growing iii nitride single crystal |
| 03/25/2009 | EP1587971B1 Method for producing large, single-crystals of aluminum nitride |
| 03/25/2009 | CN100472715C Epitaxial growth process |
| 03/19/2009 | US20090072239 Gallium oxide single crystal composite, process for producing the same, and process for producing nitride semiconductor film utilizing gallium oxide single crystal composite |
| 03/19/2009 | US20090071394 AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE |
| 03/18/2009 | EP2036996A1 Method for determining process parameters in a plasma-assisted process for treating surfaces |
| 03/18/2009 | CN101387007A Method for growing crystal under optimized temperature field |
| 03/17/2009 | US7504321 MBE growth of an algan layer or AlGaN multilayer structure |
| 03/12/2009 | US20090068082 Synthesis and characterization of a highly stable amorphous silicon hydride as the product of a catalytic hydrogen plasma reaction |
| 03/12/2009 | US20090064922 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices |