| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 02/02/2010 | US7655091 Formation of single-crystal silicon carbide |
| 01/28/2010 | WO2010010352A1 Diamond material |
| 01/28/2010 | US20100018455 System for Forming SiC Crystals Having Spatially Uniform Doping Impurities |
| 01/28/2010 | CA2725084A1 Diamond material |
| 01/27/2010 | CN100585030C Method for preparing monocrystalline silicon thin film |
| 01/26/2010 | US7651927 Semiconductor device and method for fabricating the same |
| 01/21/2010 | WO2010007867A1 Process for producing group iii nitride crystal and group iii nitride crystal |
| 01/21/2010 | US20100015438 High colour diamond layer |
| 01/20/2010 | EP2146384A1 Method of making a laser diode |
| 01/20/2010 | EP2145987A1 Fabrication method of a group III nitride crystal substance |
| 01/20/2010 | EP2145975A2 Perovskite oxide, oxide composition, oxide body, piezoelectric device, and liquid discharge apparatus |
| 01/20/2010 | CN100582321C Method for growing Na doping p type ZnO crystal thin film |
| 01/19/2010 | US7648689 Process for the production of InP fine particles and InP fine particle dispersion obtained by the process |
| 01/19/2010 | US7648577 MBE growth of p-type nitride semiconductor materials |
| 01/14/2010 | WO2010005914A1 High quality large area bulk non-polar or semipolar gallium based substrates and methods |
| 01/14/2010 | US20100009176 High temperature superconducting thick films |
| 01/14/2010 | US20100006024 Epitaxial semiconductor deposition methods and structures |
| 01/14/2010 | US20100006023 Method For Preparing Films And Devices Under High Nitrogen Chemical Potential |
| 01/13/2010 | CN100580155C Method for developing zinc oxide crystallite by chemical gas-phase transmitting process |
| 01/12/2010 | US7645517 Rare earth-oxides, rare earth nitrides, rare earth phosphides and ternary alloys with silicon |
| 01/07/2010 | WO2010001804A1 PROCESS FOR PRODUCTION OF AlXGa(1-X)N SINGLE CRYSTAL, AlXGa(1-X)N SINGLE CRYSTAL, AND OPTICS |
| 01/07/2010 | WO2010001803A1 PROCESS FOR PRODUCTION OF AlXGa(1-X)N SINGLE CRYSTAL, AlXGa(1-X)N SINGLE CRYSTAL AND OPTICAL LENSES |
| 01/07/2010 | US20100003492 High quality large area bulk non-polar or semipolar gallium based substrates and methods |
| 01/07/2010 | US20100003462 Structure Including A Graphene Layer And Method For Forming The Same |
| 01/06/2010 | EP2140038A2 Group-iii metal nitride and preparation thereof |
| 01/06/2010 | CN100577894C Large area, uniformly low dislocation density GaN substrate and process for making the same |
| 01/05/2010 | US7642693 Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods |
| 01/05/2010 | US7641988 Comprises an epitaxial nitride layer with a light-emitting device structure formed on the above self-supported nitride semiconductor substrate; having large light emission with a low driving voltage; gallium nitride |
| 12/30/2009 | EP2137761A1 Method of depositing materials on a non-planar surface |
| 12/30/2009 | EP1404904B1 Production method of alpha-sic wafer |
| 12/29/2009 | CA2430941C Cesium dispensers and process for the use thereof |
| 12/23/2009 | WO2009155414A1 Microwave-assisted synthesis of carbon and carbon-metal composites from lignin, tannin and asphalt derivatives |
| 12/23/2009 | EP1664397B1 Growth of ulta-high purity silicon carbide crystals in an ambient containing hydrogen |
| 12/22/2009 | US7635413 Method for preparing silicon carbide single crystal |
| 12/22/2009 | CA2385621C Method and apparatus for growing silicon carbide crystals |
| 12/17/2009 | US20090308305 Process for producing single-crystal substrate with off angle |
| 12/16/2009 | CN101603207A Method for preparing network branched silicon nitride single crystal nanostructure with high purity and high yield |
| 12/16/2009 | CN101603199A Method for growing p-type ZnO crystal film by codoping Li and Na |
| 12/10/2009 | WO2009148671A2 Method for preparing ultraflat, atomically perfect areas on large regions of a crystal surface by heteroepitaxy deposition |
| 12/10/2009 | US20090301390 Apparatus for evaporation, a crucible for evaporation and a method of growing a film on a substrate |
| 12/10/2009 | US20090301389 Method for Metal-Free Synthesis of Epitaxial Semiconductor Nanowires on Si |
| 12/09/2009 | EP2131398A1 Compound semiconductor laminate, process for producing the compound semiconductor laminate, and semiconductor device |
| 12/09/2009 | EP2130941A2 An apparatus for evaporation comprising an effusion cell and a method of growing a film on a substrate |
| 12/09/2009 | EP1556530B1 A method of forming nanostructured catalysts for nanowire growth |
| 12/08/2009 | US7629625 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 12/08/2009 | US7629237 MBE growth of a semiconductor layer structure |
| 12/08/2009 | US7628855 Atomic layer deposition using electron bombardment |
| 12/03/2009 | WO2009146382A1 Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same |
| 12/02/2009 | EP2126163A2 Guided diameter sic sublimation growth with multi-layer growth guide |
| 12/01/2009 | US7625447 Method of growing semiconductor crystal |
| 12/01/2009 | CA2517024C .beta.-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method |
| 11/26/2009 | DE102004020058B4 Verfahren zum Abscheiden einer Schicht aus einer Formgedächtnislegierung A method of depositing a layer of a shape memory alloy |
| 11/24/2009 | US7621998 Single crystalline gallium nitride thick film having reduced bending deformation |
| 11/19/2009 | WO2009139447A1 Single crystal manufacturing device and manufacturing method |
| 11/18/2009 | EP2118333A1 A universal method for selective area growth of organic molecules by vapor deposition |
| 11/18/2009 | CN101580964A Seed crystal support for growing silicon carbide crystal with high quality |
| 11/12/2009 | US20090277390 Source, an Arrangement for Installing a Source, and a Method for Installing and Removing a Source |
| 11/11/2009 | CN100558945C Method for preparing Nano ultrathin wafer possessing closed packing structure |
| 11/10/2009 | US7615203 Single crystal diamond |
| 11/05/2009 | US20090273839 Method for constructing a phase conjugate mirror |
| 11/03/2009 | US7611579 Systems and methods for synthesis of extended length nanostructures |
| 11/03/2009 | CA2376564C Semi-insulating silicon carbide without vanadium domination |
| 10/29/2009 | WO2009131061A1 Method of manufacturing a si(1-v-w-x)cwalxnv substrate, method of manufacturing an epitaxial wafer, si(1-v-w-x)cwalxnv substrate, and epitaxial wafer |
| 10/28/2009 | EP1672091B1 Laminate containing wurtzrite crystal layer, and method for production thereof |
| 10/28/2009 | CN101565855A Method for preparing silicon nanocrystal superlattice structure based on co-evaporation method |
| 10/22/2009 | US20090260563 Method of producing zinc oxide semiconductor crystal |
| 10/15/2009 | WO2009125009A1 Method of preparing zinc oxide (zno) polycrystals and single crystals on a seed by chemically activated high-temperature sublimation and device for implementing it |
| 10/15/2009 | US20090255458 Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same |
| 10/14/2009 | CN100549242C Growth device for preparing IV-VI species semiconductor single-crystal thin film |
| 10/13/2009 | US7601441 single polytype single crystal silicon carbide wafer, diameter greater than 3 inches and less than 5 inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm-2, combined concentration of shallow level dopants less than 5E16 cm-3 |
| 10/13/2009 | US7601217 Method of fabricating an epitaxially grown layer |
| 10/07/2009 | CN101553604A Process for producing single crystal of silicon carbide |
| 10/07/2009 | CN101550600A A method to prepare a high-purity high-density monocrystalline silicon nitride nano array |
| 10/06/2009 | US7597758 Chemical precursor ampoule for vapor deposition processes |
| 10/06/2009 | CA2311061C Molecular beam epitaxy (mbe) growth of semi-insulating c-doped gan |
| 10/01/2009 | WO2009120505A1 Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby |
| 10/01/2009 | WO2009119896A1 Aln bulk single crystal, semiconductor device, and process for producing aln single crystal bulk |
| 10/01/2009 | WO2009119159A1 Substrate for optical device and method for manufacturing the substrate |
| 10/01/2009 | CA2719826A1 Aln bulk single crystal, semiconductor device using the same and method for producing the same |
| 10/01/2009 | CA2718757A1 Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby |
| 09/29/2009 | US7594967 Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
| 09/24/2009 | WO2009116581A1 Method for producing silicon carbide single crystal |
| 09/23/2009 | CN101538742A Single band difference superlattice structure and preparation thereof |
| 09/23/2009 | CN101538734A Method for growing Zn(1-x)MgxO crystal thin film on Si substrate |
| 09/23/2009 | CN100543196C Method and device for AIN single crystal production with gas-permeable crucible walls |
| 09/22/2009 | US7592619 Epitaxy layer and method of forming the same |
| 09/22/2009 | US7591897 Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures |
| 09/17/2009 | WO2009113455A1 Apparatus and method for manufacturing compound semiconductor single crystal |
| 09/17/2009 | CA2694496A1 Compound semiconductor single-crystal manufacturing device and manufacturing method |
| 09/16/2009 | EP2100989A1 Method for preparing substrate having monocrystalline film |
| 09/16/2009 | EP0835336B2 A device and a method for epitaxially growing objects by cvd |
| 09/11/2009 | WO2009111245A1 Method and apparatus for growth of high purity 6h-sic single crystal |
| 09/10/2009 | US20090223333 Cutting Tool, Process for Producing the Same, and Method of Cutting |
| 08/26/2009 | EP1026290B1 Method and apparatus for producing silicon carbide single crystal |
| 08/26/2009 | CN101514482A A ZnS monocrystal nanowire growing method |
| 08/25/2009 | US7578989 forming molybdenum carbide on carbide nanorods from decomposing Molybdenum Acetyl Acetonate; use as catalyst and/or catalyst supports in fluid phase catalytic chemical reactions |
| 08/20/2009 | US20090208749 Group III Nitride Single Crystal and Method of Its Growth |
| 08/20/2009 | US20090205562 Method for manufacturing epitaxial wafer |
| 08/19/2009 | CN101509123A Method for producing small-sized tin indium oxide nano-wire material in low-temperature |
| 08/18/2009 | USRE40871 Method of producing plasma display panel with protective layer of an alkaline earth oxide |