| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 07/22/2010 | DE102009004751A1 Thermisch isolierte Anordnung und Verfahren zur Herstellung eines SiC-Volumeneinkristalls Thermally insulated arrangement and method for manufacturing a SiC bulk single |
| 07/21/2010 | EP2207910A1 Method for the production of semiconductor ribbons from a gaseous feedstock |
| 07/20/2010 | CA2524581C Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal |
| 07/15/2010 | US20100175614 Thermally insulated configuration and method for producing a bulk sic crystal |
| 07/15/2010 | US20100175613 Base material for forming single crystal diamond film and method for producing single crystal diamond using the same |
| 07/14/2010 | CN101775644A Manganese oxide epitaxial film with anisotropic magnetoresistivity and preparation method and application thereof |
| 07/13/2010 | US7754180 Ultrahard diamonds and method of making thereof |
| 07/13/2010 | US7754013 Apparatus and method for atomic layer deposition on substrates |
| 07/13/2010 | US7754012 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride |
| 07/01/2010 | WO2010020224A3 Method for producing a material containing zinc oxide and a semiconductor element with a material containing zinc oxide |
| 07/01/2010 | DE102009009614A1 Producing a silicon carbide volume single crystal, comprises producing silicon carbide growth gas phase in crystal growing area of culture crucible and growing-off the silicon carbide volume single crystal from the gas phase by deposition |
| 07/01/2010 | DE102008063129A1 Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat Manufacturing method of a co-doped SiC bulk and high-resistance SiC substrate |
| 07/01/2010 | DE102008063124A1 Producing a silicon carbide volume single crystal, comprises producing silicon carbide growth gas phase in crystal growing area of culture crucible and growing-off the silicon carbide volume single crystal from the gas phase by deposition |
| 06/30/2010 | EP2202329A1 Iii nitride structure and method for manufacturing iii nitride semiconductor fine columnar crystal |
| 06/30/2010 | EP1443131B1 Oxide high-temperature superconductor and its production method |
| 06/29/2010 | US7745854 Substrate for growing compound semiconductor and epitaxial growth method |
| 06/24/2010 | US20100159182 Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC Substrate |
| 06/23/2010 | EP2200071A1 GaN single crystal substrate and method of making the same using homoepitaxy |
| 06/23/2010 | EP2199434A1 Method for forming microscopic structures on a substrate |
| 06/23/2010 | EP2199433A1 Method for forming microscopic structures on a substrate |
| 06/17/2010 | US20100147212 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same |
| 06/17/2010 | US20100147211 -Nitride Single-Crystal Growth Method |
| 06/17/2010 | US20100147209 Polycrystalline Germanium-Alloyed Silicon And A Method For The Production Thereof |
| 06/16/2010 | CN201506852U Vertical furnace for growing mercuric iodide single crystals |
| 06/10/2010 | US20100143748 Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal |
| 06/10/2010 | US20100140755 Rare-earth oxides, rare-earth nitrides, rare-earth phosphides and ternary alloys |
| 06/10/2010 | US20100139555 Apparatus for crystal growth |
| 06/10/2010 | US20100139552 Axial Gradient Transport Growth Process and Apparatus Utilizing Resistive Heating |
| 06/09/2010 | CN1942610B Ultrahard diamonds and method of making thereof |
| 06/09/2010 | CN101724906A Method for growing high-quality conductive silicon carbide crystal |
| 06/09/2010 | CN101724894A Molecular beam epitaxy method for GaAS-based InAs1-xSbx/InSb multi-quantum-well film |
| 06/09/2010 | CN101724893A Method for preparing high-purity semi-insulating silicon carbide crystalloid |
| 06/08/2010 | US7732012 Deposition of high-purity polycrystalline silicon at a high temperature onto a white-heated seed rod in a closed reaction furnace by pyrolysis or hydrogen reduction of a starting silane gas |
| 06/03/2010 | WO2010061214A1 Electrooptic crystal and device |
| 06/03/2010 | US20100133585 Growth of germanium epitaxial thin film with negative photoconductance characteristics and photodiode using the same |
| 06/02/2010 | EP2192211A1 Stable Power Devices on Low-Angle Off-Cut Silicon Carbide Crystals |
| 06/02/2010 | CN1364321B Multi-layer articles and method of making same |
| 06/02/2010 | CN101426965B Production of bulk single crystals of silicon carbide |
| 06/02/2010 | CN101311295B Device for preparing single wall carbon nanotube film by arc-discharge method |
| 06/01/2010 | CA2555582C Group i-vii semiconductor single crystal thin film and process for producing same |
| 05/27/2010 | US20100126411 METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH |
| 05/26/2010 | EP2190007A1 Single crystal thin film of organic semiconductor compound and method for producing the same |
| 05/19/2010 | EP2186920A1 Arrangement and method for regulating a gas stream or the like |
| 05/18/2010 | US7718001 Method for fabricating semiconductor epitaxial layers using metal islands |
| 05/13/2010 | US20100119849 Sic epitaxial substrate and method for producing the same |
| 05/12/2010 | EP1540048B1 Silicon carbide single crystal and method and apparatus for producing the same |
| 05/11/2010 | US7713507 Tough diamonds and method of making thereof |
| 05/11/2010 | US7713353 β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method |
| 05/11/2010 | US7713352 Synthesis of fibers of inorganic materials using low-melting metals |
| 05/06/2010 | DE102008043447A1 Single crystalline gold or palladium nanowire useful in electrical-, optical- or magnetic device or sensors, comprises a vertical or horizontal orientation to a surface of a single crystalline semi-conductive- or non-conductive substrate |
| 05/05/2010 | EP2182100A2 High purity semi-insulating single crystal silicon carbide wafer |
| 05/05/2010 | CN1871662B Silver selenide film stoichiometry and morphology control in sputter deposition |
| 05/05/2010 | CN101701358A Method for preparing high-quality large silicon carbide single crystal and silicon carbide single crystal prepared by same |
| 05/05/2010 | CN101027433B Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| 05/04/2010 | US7709826 Rare earth-oxides, rare earth-nitrides, rare earth-phosphies, and ternary alloys with silicon |
| 04/29/2010 | US20100102330 Nitride semiconductor device having oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 04/29/2010 | US20100101486 Substrate for epitaxial growth and method for producing nitride compound semiconductor single crystal |
| 04/28/2010 | CN101698962A Method for accurately controlling growth and characterization of components of quaternary semiconductor direct bandgap material |
| 04/21/2010 | EP2177649A1 Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal |
| 04/21/2010 | CN101086963B Method of growing gallium nitride crystal |
| 04/20/2010 | US7700167 Coating on a stator vane comprising a polymer matrix fiber composite having a melting point, glass transition temperature, or maximum exposure temperature that is < 150 degrees C.; polymer matrix fiber composite of metal nitrides, carbides, carboxynitrides has a melting point of > 150 degrees C. |
| 04/15/2010 | WO2010041497A1 Method for forming sic single crystal |
| 04/15/2010 | US20100089311 Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same |
| 04/14/2010 | EP2175054A2 Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device |
| 04/14/2010 | EP2173921A2 High temperature evaporator cell having parallel-connected heating zones |
| 04/13/2010 | US7696073 Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal |
| 04/13/2010 | US7695565 Sublimation chamber for phase controlled sublimation |
| 04/08/2010 | US20100083897 Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the same |
| 04/07/2010 | EP2171134A1 Fabrication of sic substrates with low warp and bow |
| 04/07/2010 | CN101691670A Method for growing P-type zinc oxide film by using target doped with zinc phosphate |
| 03/31/2010 | CN201433250Y Crystal growing furnace |
| 03/30/2010 | US7687798 Epitaxy with compliant layers of group-V species |
| 03/25/2010 | US20100075175 Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture |
| 03/25/2010 | US20100075107 Hexagonal wurtzite single crystal and hexagonal wurtzite single crystal substrate |
| 03/25/2010 | US20100074826 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate |
| 03/24/2010 | CN101680115A Defect reduction in seeded aluminum nitride crystal growth |
| 03/24/2010 | CN101680112A Guided diameter sic sublimation growth with multi-layer growth guide |
| 03/24/2010 | CN101680109A Apparatus and method for manufacturing compound semiconductor single crystal |
| 03/23/2010 | US7683457 Group I-VII semiconductor single crystal thin film and process for producing same |
| 03/18/2010 | US20100068118 High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal |
| 03/16/2010 | US7678195 Seeded growth process for preparing aluminum nitride single crystals |
| 03/16/2010 | CA2411606C Preparation method of a coating of gallium nitride |
| 03/11/2010 | WO2010027292A1 Substrate carrier for molecular-beam epitaxy |
| 03/10/2010 | CN201420112Y Grower of SiC monocrystals |
| 03/10/2010 | CN100593591C Growth of colorless silicon carbide crystal |
| 03/04/2010 | WO2010025153A1 Nitride crystal with removable surface layer and methods of manufacture |
| 02/25/2010 | WO2010020224A2 Method for producing a material containing zinc oxide and a semiconductor element with a material containing zinc oxide |
| 02/25/2010 | WO2009148671A3 Method for preparing ultraflat, atomically perfect areas on large regions of a crystal surface by heteroepitaxy deposition |
| 02/25/2010 | DE102008039183A1 Verfahren zum Herstellen eines zinkoxidhaltigen Materials und ein Halbleiterbauelement mit einem zinkoxidhaltigen Material A method for producing a zinc oxide-containing material and a semiconductor device with a zinc oxide-containing material |
| 02/23/2010 | US7667298 Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 02/23/2010 | CA2351123C Gan selective growth on sic substrates by ammonia-source mbe |
| 02/17/2010 | EP2152943A1 Apparatus for crystal growth |
| 02/17/2010 | CN101649487A Vertical-type furnace for alpha-HgI2 single crystal growth and growth method of alpha-HgI2 single crystal |
| 02/16/2010 | US7663157 silicon, sapphire, gallium arsenide, magnesium oxide, zinc oxide and silicon carbide |
| 02/11/2010 | US20100031877 Sic single crystals with reduced dislocation density grown by step-wise periodic perturbation technique |
| 02/09/2010 | US7659190 Method for producing a Group III-V compound semiconductor |
| 02/04/2010 | US20100025696 Process for Producing a Silicon Carbide Substrate for Microelectric Applications |
| 02/03/2010 | CN100587132C Method for doping oxygen to gallium nitride crystal and oxygen-doped n-type gallium nitride single crystal substrate |
| 02/03/2010 | CN100587127C Surfactant method for preparing surface smooth high quality zinc oxide epitaxial film |
| 02/02/2010 | US7655197 III-V nitride substrate boule and method of making and using the same |