Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials
Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
12/2010
12/08/2010CN101328609B Method for preparing tin doping zinc oxide nanowire by vapor deposition
12/08/2010CN101228013B Method and composition for adhering materials together
12/08/2010CN101163815B Source, an arrangement for installing a source, and a method for installing and removing a source
12/08/2010CN101091893B Vacuum tube furnace for preparing nano material
12/02/2010US20100303704 Method for growing group iii-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group iii-nitride crystals grown thereby
12/02/2010US20100301420 High-k heterostructure
12/02/2010US20100301306 Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof
11/2010
11/30/2010US7842338 Proteolytic deposition of titanium/zirconium oxides; semiconductors; transparencies; photocatalysts
11/25/2010US20100295039 Method for growing zinc-oxide-based semiconductor device and method for manufacturing semiconductor light emitting device
11/25/2010US20100294197 Methods For Producing Epitaxially Coated Silicon Wafers
11/24/2010CN101896646A Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes
11/24/2010CN101892522A Method for preparing lead-titanate-lead-magnesium niobate films by pulsed laser deposition assisted by oxygen plasmas
11/23/2010US7838398 Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer
11/18/2010US20100289122 Iii-v nitride substrate boule and method of making and using the same
11/18/2010US20100288192 Method for manufacturing epitaxial silicon wafer
11/17/2010EP2251463A1 Apparatus and method for manufacturing compound semiconductor single crystal
11/17/2010EP1532288B1 Hybrid beam deposition system and method for fabricating zno films
11/17/2010CN101311299B Process for measuring temperature of thermal couple when source material melting in beam source furnace
11/10/2010EP2248931A2 Free-standing and parting method for forming same
11/04/2010US20100275836 Method for growing group iii nitride crystal
11/04/2010DE102009052905A1 Zwillingsfreier Einkristall-Edelmetall-Nanodraht und Herstellungsverfahren eines zwillingsfreien Einkristall-Edelmetall-Nanodrahtes Free twin single crystal noble metal nanowire and manufacturing method of a twin-free single crystal noble metal nanowire
11/03/2010EP2246458A1 Thin film of aluminum nitride and process for producing the thin film of aluminum nitride
11/03/2010EP2245217A1 Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes
11/03/2010CN201620206U Double-flash evaporation device for preparing superlattice thermoelectric thin-film material
11/02/2010US7824955 Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices
10/2010
10/28/2010WO2010122801A1 Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal
10/28/2010US20100272951 Twin-free single crystal noble-metal nano wire and fabrication method of twin-free single crystal noble-metal nano wire
10/28/2010CA2759530A1 Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal
10/27/2010CN101311386B Method for preparing single crystal zinc blende nano-wire
10/26/2010US7820125 Phosphorus effusion cell arrangement and method for producing molecular phosphorus
10/21/2010WO2010119749A1 Apparatus for producing silicon carbide single crystal and method for producing silicon carbide single crystal
10/21/2010US20100263707 Base structure for iii-v semiconductor devices on group iv substrates and method of fabrication thereof
10/20/2010EP2241534A2 Method for manufacturing bismuth single crystal nonowires
10/20/2010CN101864592A Ferroelectric metal hetero-junction based memristor and preparation method thereof
10/19/2010CA2489602C Material evaporation chamber with differential vacuum pumping
10/13/2010CN101328615B Growth method of CdTe nanorod by catalyst assistant vacuum heat evaporation
10/13/2010CN101236905B A method for making IV-VI sector semiconductor single crystal film on CdZnTe underlay
10/07/2010US20100255305 Production method for a low-dislocation bulk aln single crystal and low-dislocation monocrystalline aln substrate
10/07/2010US20100255304 Aluminum Nitride Single Crystal Forming Polygonal Columns and a Process for Producing a Plate-Shaped Aluminum Nitride Single Crystal Using the Same
10/07/2010US20100252835 Nitride semiconductor and nitride semiconductor crystal growth method
10/07/2010US20100252808 Nanowire growth on dissimilar material
10/07/2010US20100251958 Epitaxial growth method
10/07/2010DE102009016137A1 Herstellungsverfahren für einen versetzungsarmen AIN-Volumeneinkristall und versetzungsarmes einkristallines AIN-Substrat Production process for a low-dislocation AlN bulk single and low dislocation single crystal AlN substrate
10/07/2010DE102009016134A1 Producing volume single crystal, comprises disposing seed crystal in crystal growth region of growth crucible with initial growth surface and center central longitudinal axis, and growing the single crystal by deposition onto seed crystal
10/07/2010DE102009016133A1 Producing aluminum nitride volume single crystal, comprises disposing monocrystalline aluminum nitride seed crystal in crystal growth region of crucible arrangement, and producing aluminum nitride growth gas phase in crystal growth region
10/07/2010DE102009016132A1 Producing silicon carbide volume single crystal, by disposing seed crystal in crystal growth region of growth crucible with initial growth surface and center central longitudinal axis and producing growth gas phase in crystal growth region
10/07/2010DE102009016131A1 Producing a silicon carbide volume single crystal, comprises producing silicon carbide growth gaseous phase in crystal growth region of growth crucible, and growing the single crystal by deposition from silicon carbide growth gaseous phase
10/06/2010CN1973064B One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
10/05/2010US7807126 provides a large-area, high-quality diamond single crystal substrate that is used in semiconductor materials, electronic components, optical components; single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis
09/2010
09/30/2010WO2010111473A1 Sic single crystal sublimation growth method and apparatus
09/30/2010US20100244087 Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element
09/30/2010US20100242835 High volume delivery system for gallium trichloride
09/30/2010US20100242833 AlN Crystal and Method of Its Growth
09/29/2010EP2233615A2 Metal nano-objects, formed on semiconductor surfaces, and methods for making said nano-objects
09/29/2010EP2233603A1 Method and apparatus
09/29/2010CN101311298B Process for measuring source material in site in source furnace
09/28/2010US7803717 Growth and integration of epitaxial gallium nitride films with silicon-based devices
09/22/2010EP2230334A1 MULTILAYER SUBSTRATE INCLUDING GaN LAYER, METHOD FOR MANUFACTURING THE MULTILAYER SUBSTRATE INCLUDING GAN LAYER, AND DEVICE
09/22/2010EP2230333A1 Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal
09/22/2010CN101842524A Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal
09/21/2010USRE41747 Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film
09/21/2010US7799132 Patterned atomic layer epitaxy
09/16/2010US20100229789 Beta-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
09/15/2010CN101831701A Method for growing n-type transparent conducting ZnO crystal thin film by F doping
09/14/2010US7795181 Oxide high-temperature superconductor and its production method
09/14/2010US7794543 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
09/14/2010US7794541 Gallium nitride-based material and method of manufacturing the same
09/10/2010WO2010101715A1 Gas injectors for cvd systems with the same
09/10/2010WO2010101200A1 Crucible, apparatus, and method for producing silicon carbide single crystals
09/08/2010CN101509123B Method for producing small-sized tin indium oxide nano-wire material in low-temperature
09/08/2010CN101128911B System and process for high-density, low-energy plasma enhanced vapor phase epitaxy
09/02/2010US20100218723 Molecular Beam Cell Having Purge Function
09/02/2010DE10050767B4 Vorrichtung zur Erzeugung von Einkristallen hoher Qualität Apparatus for producing single crystals of high quality
09/01/2010EP2224041A1 Polygonal columnar material of aluminum nitride single crystal, and process for producing plate-like aluminum nitride single crystal using the polygonal columnar material
08/2010
08/31/2010US7785415 Localized synthesis and self-assembly of nanostructures
08/31/2010US7785414 Process for manufacturing wafer of silicon carbide single crystal
08/25/2010CN101812723A Method and device for growing silicon carbide signal crystals based on physical vapor transport technology
08/25/2010CN101481817B Growth method of nonpolar ZnO crystal film
08/24/2010US7781314 Nitride semiconductor device manufacturing method
08/19/2010US20100206218 Method of making group III nitride-based compound semiconductor
08/18/2010EP2218806A1 Aln crystal and method for growing the same
08/18/2010CN101805928A Single crystal gan substrate
08/17/2010USRE41503 Method of producing plasma display panel with protective layer of an alkaline earth oxide
08/17/2010US7776154 Preparation method of a coating of gallium nitride
08/12/2010US20100199910 Method of manufacturing silicon carbide single crystal
08/11/2010CN201545935U Automatic control device for controlling air pressure in vacuum growth chamber
08/11/2010CN101802274A AlN crystal and method for growing the same
08/11/2010CN101798706A Method for extending and growing graphene on SiC substrate
08/11/2010CN101144179B Device for single-crystal growth by physical gas phase transmission precipitation method
08/10/2010US7771532 Nitride semiconductor substrate and method of producing same
08/05/2010US20100192840 SEMICONDUCTOR HETEROJUNCTION DEVICES BASED ON SiC
08/04/2010EP1423259B1 parting method for forming free-standing (al,ga,in)n article
08/03/2010US7767307 Crack free monocrystalline thick films; having intermediate layer with lattice parameter smaller than outer layers; simple, low cost, reproducible production
08/03/2010US7767022 Method of annealing a sublimation grown crystal
07/2010
07/29/2010WO2010084863A1 Apparatus for producing nitride semiconductor crystal, method for producing nitride semiconductor crystal, and nitride semiconductor crystal
07/29/2010US20100189981 Large-area bulk gallium nitride wafer and method of manufacture
07/27/2010US7763529 heating substrate, carburizating with hydrocarbon-containing gas to form carbide layer, annealing; free of cooling steps; cost efficiency
07/27/2010US7763113 Photocatalyst material and method for preparation thereof
07/22/2010WO2010082574A1 Method for producing nitride semiconductor crystal, nitride semiconductor crystal, and apparatus for producing nitride semiconductor crystal
07/22/2010US20100180814 Fabrication of sic substrates with low warp and bow
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