| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 05/03/2011 | US7935535 Nanostructure material with metallic oxide and method for detecting phosphorus-containing compounds |
| 04/28/2011 | US20110094668 Substrate with determinate thermal expansion coefficient |
| 04/27/2011 | EP2314738A1 PROCESS FOR PRODUCTION OF A AlxGa(1-X)N SINGLE CRISTAL, AlxGa(1-X)N SINGEL CRISTAL, AND OPTICS |
| 04/27/2011 | EP2314737A2 Method of producing high purity semi-insulating single crystal silicon carbide wafer |
| 04/27/2011 | CN102037164A Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby |
| 04/21/2011 | WO2010101715A9 Gas injectors for cvd systems with the same |
| 04/21/2011 | US20110089537 Growing process for group iii nitride elements |
| 04/21/2011 | US20110089431 Compound single crystal and method for producing the same |
| 04/21/2011 | DE102009048868A1 Herstellungsverfahren für einen SiC-Volumeneinkristall mittels einer thermischen Behandlung und niederohmiges einkristallines SiC-Substrat Manufacturing method of a SiC bulk single crystal by means of a thermal treatment, and low-resistance single-crystal SiC substrate |
| 04/20/2011 | CN102021653A Method for growing silicon carbide single crystal by using high-density material block |
| 04/14/2011 | WO2011044554A1 Method for synthesis of high quality large area bulk gallium based crystals |
| 04/13/2011 | EP2309040A1 Process for production of a i x ga (1-x )n single crystal,a i x ga(1-x) n single crystal and optical lensess |
| 04/13/2011 | EP1851355B1 Effusion cell valve |
| 04/13/2011 | CN102016135A Method of manufacturing Si(1-v-w-x)CwAlxNv substrate, method of manufacturing epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer |
| 04/12/2011 | US7922821 Source, an arrangement for installing a source, and a method for installing and removing a source |
| 04/07/2011 | US20110081549 Ain bulk single crystal, semiconductor device using the same and method for producing the same |
| 04/07/2011 | US20110081531 Base material for growing single crystal diamond and method for producing single crystal diamond substrate |
| 04/06/2011 | EP2305859A1 III-V Nitride substrate boule and method of making and using the same |
| 04/06/2011 | CN101451269B Method for preparing centimeter grade mono-layer or double layers ordered single crystal graphite layer |
| 04/05/2011 | US7919831 Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crystal substrate |
| 03/31/2011 | US20110073034 Apparatus and process for crystal growth |
| 03/30/2011 | EP2302111A1 Process for producing group iii nitride crystal and group iii nitride crystal |
| 03/30/2011 | EP2302110A1 Method of manufacturing a si(1-v-w-x)cwalxnv substrate, method of manufacturing an epitaxial wafer, si(1-v-w-x)cwalxnv substrate, and epitaxial wafer |
| 03/30/2011 | EP2300643A1 Diamond material |
| 03/30/2011 | EP1784529B1 Manufacture of cadmium mercury telluride on patterned silicon |
| 03/30/2011 | CN101323982B Preparation of high quality cubic boron nitride film |
| 03/29/2011 | US7915152 III-V nitride substrate boule and method of making and using the same |
| 03/23/2011 | EP2297383A1 Microwave-assisted synthesis of carbon and carbon-metal composites from lignin, tannin and asphalt derivatives |
| 03/17/2011 | US20110064103 Semipolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface |
| 03/17/2011 | US20110062394 Rare earth-doped sapphire films and related methods |
| 03/16/2011 | CN101985773A Seed crystal treatment method and silicon carbide mono-crystal growing method |
| 03/16/2011 | CN101498036B Controllable pressure pen ejecting apparatus possessing automatic alarming function for epitaxial production |
| 03/08/2011 | US7902546 Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon |
| 03/03/2011 | WO2011025715A1 Doped transparent conductive oxide |
| 03/02/2011 | EP2290136A1 Method for achieving improved epitaxy quality (surface texture and defect densitity) on free-standing (aluminum, indium, gallium) nitride ((Al, In, Ga)N) substrates for opto-electronic and electronic devices |
| 03/02/2011 | EP2290135A1 Method for achieving improved epitaxy quality (surface texture and defect densitity) on free-standing (aluminum, indium, gallium) nitride ((Al, In, Ga)N) substrates for opto-electronic and electronic devices |
| 03/02/2011 | EP2290120A2 High temperature evaporator cell having parallel-connected heating zones |
| 03/02/2011 | EP1874985B1 Method of and system for forming sic crystals having spatially uniform doping impurities |
| 02/24/2011 | US20110042685 Substrates and methods of fabricating epitaxial silicon carbide structures with sequential emphasis |
| 02/24/2011 | US20110042684 Method of Growing AlN Crystals, and AlN Laminate |
| 02/23/2011 | EP2287367A1 Single crystal manufacturing device and manufacturing method |
| 02/23/2011 | EP1664395B1 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
| 02/23/2011 | CN101979723A Method for preparing p-type CdS nanowires |
| 02/22/2011 | US7892879 Manufacture of cadmium mercury telluride on patterned silicon |
| 02/17/2011 | US20110039071 METHOD OF MANUFACTURING A Si(1-v-w-x)CwAlxNv SUBSTRATE, METHOD OF MANUFACTURING AN EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv SUBSTRATE, AND EPITAXIAL WAFER |
| 02/16/2011 | EP2284297A1 Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminium, indium, gallium) nitride ((AI, In,Ga)N) substrates for opto-electronic and electronic devices |
| 02/10/2011 | WO2011017439A1 Critical current density enhancement via incorporation of nanoscale ba2renbo6 in rebco films |
| 02/10/2011 | US20110031534 PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER |
| 02/10/2011 | US20110030611 METHOD FOR PREPARING POLYCRYSTALS AND SINGLE CRYSTALS OF ZINC OXIDE (ZnO) ON A SEED BY CHEMICALLY ACTIVATED SUBLIMATION AT HIGH TEMPERATURE AND DEVICE FOR CARRYING OUT SAID METHOD |
| 02/10/2011 | US20110030610 High-productivity porous semiconductor manufacturing equipment |
| 02/10/2011 | DE10320133B4 Verfahren zur Herstellung von einkristallinen oder quasi-einkristallinen Diamantschichten und auf einem Körper angeordnete einkristalline oder quasi-einkristalline Diamantschicht A process for the production of single crystalline or quasi-single-crystalline diamond layers and arranged on a body monocrystalline or quasi-monocrystalline diamond layer |
| 02/09/2011 | CN101967681A Method for growing zinc telluride (ZnTe) sextic symmetric multi-branched hierarchical nano-structure |
| 02/09/2011 | CN101967678A Method for preparing thallium-doped caesium iodide (CsI:T1) film |
| 02/09/2011 | CN101966792A Method for forming patterns on surface of gem |
| 02/09/2011 | CN101283122B ZnO crystal, method for growing the crystal, and method for manufacture of light-emitting element |
| 02/08/2011 | US7883998 Vapor phase growth method |
| 02/08/2011 | US7883684 Colorless single-crystal CVD diamond at rapid growth rate |
| 02/03/2011 | US20110026103 Crystal for optical conversion |
| 02/03/2011 | US20110024766 One hundred millimeter single crystal silicon carbide wafer |
| 02/02/2011 | CN101962802A Method for growing GeSn alloy on Si substrate by molecular beam epitaxy |
| 01/27/2011 | US20110018104 METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE |
| 01/26/2011 | CN101481818B Heating device for micro-area controllable nano functional material synthesis |
| 01/20/2011 | US20110014457 Graphene Layer With An Engineered Stress Supported On A Substrate |
| 01/20/2011 | US20110012233 Group iii nitride crystal substrate, epilayer-containing group iii nitride crystal substrate, semiconductor device and method of manufacturing the same |
| 01/19/2011 | EP2276061A1 PROCESS FOR PRODUCING SI(1-V-W-X)CWALXNV BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-V-W-X)CWALXNV BASE MATERIAL, AND EPITAXIAL WAFER& xA; |
| 01/19/2011 | EP2276060A1 PROCESS FOR PRODUCING SI(1-V-W-X)CWALXNV BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-V-W-X)CWALXNVBASE MATERIAL, AND EPITAXIAL WAFER & xA; |
| 01/19/2011 | EP2275591A1 Method for manufacturing a mono-crystalline layer on a substrate |
| 01/13/2011 | US20110008621 Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| 01/13/2011 | US20110005455 Method for Manufacturing a Mono-Crystalline Layer on a Substrate |
| 01/12/2011 | EP2273569A2 Beta-Ga203 light-emitting device and its manufacturing method |
| 01/12/2011 | EP2271794A1 Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby |
| 01/11/2011 | US7867466 Forming molten aluminum layer on substrate then heating in nitrogen gas atmosphere to form hexagonal aluminum nitride crystalline particle layer |
| 01/11/2011 | US7867335 GaN bulk growth by Ga vapor transport |
| 01/05/2011 | EP1043763B1 Vapor growth apparatus for semiconductor wafers with dopant gas feed assembly |
| 12/29/2010 | WO2010149017A1 Apparatus with two-chamber structure for growing silicon carbide crystals |
| 12/29/2010 | EP2267196A1 Method of growing aln crystals, and aln laminate |
| 12/29/2010 | EP2267195A1 Method for producing silicon carbide single crystal |
| 12/29/2010 | EP2267194A2 Thin-film single crystal growing method |
| 12/29/2010 | CN101932758A Method for growing alxga1-xn single crystal |
| 12/29/2010 | CN101928990A Epitaxial growth method of GeSn alloy |
| 12/29/2010 | CN101928982A Silicon carbide crystal growing device with double-chamber structure |
| 12/23/2010 | WO2010146130A1 Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus |
| 12/23/2010 | WO2010146129A1 Molecular beam epitaxy apparatus for producing wafers of semiconductor material |
| 12/23/2010 | US20100322841 III-Nitride Single-Crystal Ingot, III-Nitride Single-Crystal Substrate, Method of Manufacturing III-Nitride Single-Crystal Ingot, and Method of Manufacturing III-Nitride Single-Crystal Substrate |
| 12/23/2010 | US20100319614 Compound Semiconductor Single-Crystal Manufacturing Device and Manufacturing Method |
| 12/22/2010 | EP2264228A1 Aln bulk single crystal, semiconductor device, and process for producing aln single crystal bulk |
| 12/22/2010 | EP2264225A1 Molecular beam epitaxy apparatus for producing wafers of semiconductor material |
| 12/22/2010 | EP2264223A2 Micropipe-free silicon carbide and related method of manufacture |
| 12/22/2010 | EP2262935A1 Method of preparing zinc oxide (zno) polycrystals and single crystals on a seed by chemically activated high-temperature sublimation and device for implementing it |
| 12/22/2010 | EP2262934A1 Method and apparatus for growth of high purity 6h-sic single crystal |
| 12/16/2010 | US20100314625 GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture |
| 12/15/2010 | EP2261402A1 Method and System for the Synthesis of Semiconductor Nano-wires |
| 12/15/2010 | EP1178129B1 Polycrystalline thin film and method for preparation thereof, and superconducting oxide and method for preparation thereof |
| 12/15/2010 | EP1041610B1 GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME |
| 12/15/2010 | CN101914811A One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| 12/09/2010 | US20100307405 Method for Growing AlxGa1-xN Single Crystal |
| 12/08/2010 | EP2259295A1 Epitaxial substrate for smeiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element |
| 12/08/2010 | EP2258890A1 METHOD FOR GROWING AlxGa1-xN SINGLE CRYSTAL |
| 12/08/2010 | EP1493848B1 Seed crystal of silicon carbide single crystal and method for producing ingot using same |
| 12/08/2010 | CN101368288B P type ZnO thin film production method |