C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials

Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
09/2011
09/22/2011	US20110226182 Crucible, crystal production device, and holder
09/21/2011	EP1598450B1 Beta-Ga2O3 SINGLE CRYSTAL GROWING METHOD
09/21/2011	EP1525340B1 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
09/20/2011	US8021914 Manufacture of cadmium mercury telluride
09/14/2011	EP2365110A1 Apparatus and method for producing silicon carbide single crystal
09/14/2011	CN102181920A Method and device for preparing zinc cadmium sulfide selenide nanowires with fluorescence changing from ultraviolet to red
09/14/2011	CN102181825A Seed layer-assisted high performance TiO2-based transparent conductive film and preparation method thereof
09/14/2011	CN101319387B Preparation method of high-temperature superconductor nano-structured array
09/14/2011	CN101260566B Organic super crystal lattice material composed of disk-shaped molecule organic semiconductor and preparation method thereof
09/13/2011	US8019458 Creating multi-layer/multi-input/multi-output (MLMIMO) models for metal-gate structures
09/09/2011	WO2011108587A1 Method for affixing silicon carbide seed crystal and process for producing single-crystal silicon carbide
09/09/2011	WO2011108356A1 Method for producing silicon carbide crystal, silicon carbide crystal, and device for producing silicon carbide crystal
09/09/2011	CA2765856A1 Production method of silicon carbide crystal, silicon carbide crystal, and production device of silicon carbide crystal
09/08/2011	US20110217505 Low-Defect nitride boules and associated methods
09/08/2011	US20110217224 Silicon carbide crystal, method of manufacturing the same, apparatus for manufacturing the same, and crucible
09/08/2011	US20110214606 Apparatus and method for producing silicon carbide single crystal
09/07/2011	CN102174706A Semiconductor sequence body
09/06/2011	US8013343 Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal
09/06/2011	US8012257 Methods for controllable doping of aluminum nitride bulk crystals
09/01/2011	WO2011105123A1 Shielding member and monocrystal growth device provided therewith
09/01/2011	WO2011105122A1 Component-adjustment member and monocrystal growth device provided therewith
09/01/2011	WO2011104235A1 Devices and method for precipitating a layer on a substrate
08/2011
08/31/2011	CN101864592B Ferroelectric metal hetero-junction based memristor and preparation method thereof
08/31/2011	CN101381891B Method for preparing MgZnO single crystal film
08/24/2011	EP2360289A1 Device and method for deposing a layer composed of at least two components on a substrate
08/24/2011	CN102162131A Method for growing p-type ZnMgO crystal film by doping Ag
08/24/2011	CN101372760B Preparation of glowing oxygen doped gallium arsenide polycrystalline film
08/23/2011	US8002935 Forming method for polymeric laminated wafers comprising different film materials
08/18/2011	DE102006003847B4 Verfahren und Vorrichtung zum Herstellen eines polykristallinen Keramikfilms auf einem Substrat Method and apparatus for producing a polycrystalline ceramic film on a substrate
08/17/2011	EP1868959B1 Method of preparing dense, shaped articles constructed of a refractory material
08/17/2011	EP1440187B1 Powder metallurgy tungsten crucible for aluminum nitride crystal growth
08/17/2011	CN102159755A Method for producing nitride semiconductor crystal, nitride semiconductor crystal, and apparatus for producing nitride semiconductor crystal
08/17/2011	CN102154688A Rubrene weak epitaxial growth thin film and application thereof in organic thin-film transistor
08/11/2011	US20110195185 SiGe Matrix Nanocomposite Materials with an Improved Thermoelectric Figure of Merit
08/11/2011	US20110193196 Indium Phosphide Substrate Manufacturing Method, Epitaxial Wafer Manufacturing Method, Indium Phosphide Substrate, and Epitaxial Wafer
08/11/2011	US20110192343 Method of manufacturing a structure comprising a substrate and a layer deposited on one of its faces
08/10/2011	EP1547131B1 Large-diameter sic wafer and manufacturing method thereof
08/10/2011	CN201924102U 高温碳化硅单晶生长炉的加热温控装置 High temperature silicon carbide single crystal growth furnace heating temperature control means
08/09/2011	US7994027 Microwave heating for semiconductor nanostructure fabrication
08/04/2011	US20110186948 Semiconductor-Based Magnetic Material
08/03/2011	EP2350359A1 Electrooptic crystal and device
07/2011
07/27/2011	CN101663413B Group-iii metal nitride and preparation thereof
07/21/2011	WO2011087074A1 Apparatus for producing silicon carbide single crystal
07/21/2011	US20110176563 Cvd single crystal diamond material
07/21/2011	US20110175200 Manufacturing method of conductive group iii nitride crystal, manufacturing method of conductive group iii nitride substrate and conductive group iii nitride substrate
07/20/2011	CN102131964A Apparatus for producing nitride semiconductor crystal, method for producing nitride semiconductor crystal, and nitride semiconductor crystal
07/20/2011	CN101570889B Heat-insulation device using sublimation method to prepare aluminum nitride crystal
07/14/2011	US20110171462 Nitride Semiconductor Crystal Manufacturing Apparatus, Nitride Semiconductor Crystal Manufacturing Method, and Nitride Semiconductor Crystal
07/14/2011	US20110168082 Manufacturing method of group iii nitride semiconductor crystal and manufacturing method of group iii nitride semiconductor substrate
07/13/2011	CN101255597B Crystal growth method performing physical gas-phase transmission by using curved seed crystal
07/06/2011	CN102115910A Preparation method of core shell type nanowire
06/2011
06/30/2011	WO2011078693A1 Silicon nitride based crucible
06/30/2011	WO2011077541A1 Template for epitaxial growth and process for producing same
06/30/2011	WO2011076921A1 Method for coating a substrate with aluminum-doped zinc oxide
06/30/2011	US20110160065 Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same
06/30/2011	US20110155051 Manufacturing apparatus and manufacturing method of silicon carbide single crystal
06/30/2011	US20110155050 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same
06/30/2011	US20110155048 Manufacturing apparatus and manufacturing method of silicon carbide single crystal
06/29/2011	EP2339053A2 Manufacturing apparatus and manufacturing method of silicon carbide single crystal
06/29/2011	CN101565855B Method for preparing silicon nanocrystal superlattice structure based on co-evaporation method
06/23/2011	US20110151280 Perpendicular magnetic recording medium, method for producing the same, and magnetic recording/reproducing device
06/23/2011	US20110146565 Group iii nitride crystal and method for surface treatment thereof, group iii nitride stack and manufacturing method thereof, and group iii nitride semiconductor device and manufacturing method thereof
06/22/2011	EP2337092A1 Apparatus for vapor deposition of a sublimated material and corresponding process for continuous deposition of a thin film layer on a substrate
06/22/2011	EP2336399A2 Method of producing high quality silicon carbide single crystal in a seeded growth system.
06/22/2011	CN102104078A Method for preparing one-dimensional nanometer material with ZnO/ZnS core-shell structure and single crystal ZnS nanotube
06/15/2011	CN102099510A Process for producing group iii nitride crystal and group III nitride crystal
06/15/2011	CN101328611B Low field super large magnetoresistance manganese oxide epitaxial film and preparation thereof
06/09/2011	US20110134509 Wavelength conversion element and method for manufacturing wavelength conversion element
06/09/2011	US20110132255 Method for producing epitaxial silicon wafer
06/08/2011	CN101080516B Method for producing GaN or AlGaN crystals
06/03/2011	WO2011065239A1 Method for producing monocrystal
06/03/2011	WO2011065060A1 Method for manufacturing single crystal
06/03/2011	CA2757206A1 Method of manufacturing single crystal
06/02/2011	US20110127581 Heterostructure for electronic power components, optoelectronic or photovoltaic components
06/02/2011	US20110126759 System and high pressure, high temperature apparatus for producing synthetic diamonds
06/01/2011	EP2327816A2 Method of producing high quality single crystal of silicon carbide
06/01/2011	CN102084040A Process for production of AlxGa(1-x)n single crystal, AlxGa(1-x)n single crystal and optical lenses
06/01/2011	CN102084039A Process for production of AlxGa(1-x)N single crystal, AlxGa(1-x)N single crystal, and optics
05/2011
05/25/2011	CN102076891A Diamond material
05/25/2011	CN101550600B A method to prepare a high-purity high-density monocrystalline silicon nitride nano array
05/25/2011	CN101538734B Method for growing Zn(1-x)MgxO crystal thin film on Si substrate
05/19/2011	US20110117387 Method for producing metal nanodots
05/19/2011	US20110114965 Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods
05/19/2011	US20110114017 Epitaxial growth apparatus and epitaxial growth method
05/19/2011	US20110114016 AlGaN BULK CRYSTAL MANUFACTURING METHOD AND AlGaN SUBSTRATE MANUFACTURING METHOD
05/19/2011	US20110114013 Film deposition apparatus and method
05/18/2011	EP2321443A2 Vacuum deposition sources having heated effusion orifices
05/18/2011	EP2173921B1 High temperature evaporator cell having parallel-connected heating zones
05/18/2011	CN101641790B Compound semiconductor laminate, process for producing the compound semiconductor laminate, and semiconductor device
05/12/2011	US20110111171 Seed crystal for silicon carbide single crystal growth, method for producing the seed crystal, silicon carbide single crystal, and method for producing the single crystal
05/12/2011	US20110110840 Method for producing group iii-nitride crystal and group iii-nitride crystal
05/12/2011	US20110109973 AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL LENS
05/12/2011	US20110107961 Single crystal manufacturing device and manufacturing method
05/11/2011	EP1600530B1 (001)-orientated perovskite film formation method and device having perovskite film
05/11/2011	EP1268882B1 Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide
05/05/2011	WO2011050785A1 Measuring method for optically quantifying anti-phase domains in situ and use of the measuring method
05/05/2011	US20110104438 AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT
05/04/2011	EP1786956B1 Method and system with seed holder for growing silicon carbide single crystals
05/04/2011	CN102046857A AlN bulk single crystal, semiconductor device, and process for producing AlN single crystal bulk
05/04/2011	CN101210347B Method for preparing organic compound single-crystal nano structure

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