C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials

Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
02/2012
02/22/2012	CN101448984B 制造碳化硅单晶的方法 The method of producing a silicon carbide single crystal,
02/16/2012	US20120040273 Proton conductive inorganic thin film, method of forming the same, and fuel cell including the proton conductive inorganic thin film
02/16/2012	US20120039789 Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal
02/16/2012	US20120039344 Graphene-based saturable absorber devices and methods
02/16/2012	US20120037077 Large area deposition in high vacuum with high thickness uniformity
02/09/2012	US20120033331 Nanocomposites for ultra high density information storage, devices including the same, and methods of making the same
02/08/2012	EP2415911A1 Device for producing single crystal of silicon carbide
02/08/2012	EP2414567A1 Semipolar semiconductor crystal and method for producing it
02/08/2012	EP2071061B1 Seed crystal fixing device
02/08/2012	CN102347258A Base used for semiconductor epitaxial system
02/08/2012	CN102345162A One-dimensional axial type nano zinc oxide / zinc sulfide heterojunction and preparation method thereof
02/07/2012	US8110171 Method for decolorizing diamonds
02/02/2012	US20120025195 Confined Lateral Growth of Crystalline Material
02/02/2012	US20120025153 Silicon carbide single crystal and manufacturing method of the same
02/02/2012	US20120024222 Substrate temperature accuracy and temperature control flexibility in a molecular beam epitaxy system
02/02/2012	DE102011079855A1 Siliciumcarbideinkristall und Verfahren zu dessen Herstellung Siliciumcarbideinkristall and process for its preparation
02/01/2012	EP2411569A1 Sic single crystal sublimation growth method and apparatus
02/01/2012	CN101580964B 一种用于生长高质量碳化硅晶体的籽晶托 A seed tray for the growth of high-quality silicon carbide crystals
01/2012
01/31/2012	US8105921 Gallium nitride materials and methods
01/26/2012	US20120017826 Method for manufacturing silicon carbide substrate
01/25/2012	EP2410082A1 Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal
01/25/2012	CN102330058A Method for preparing multi-grade antimonytelluride nano wire harness array by adopting physical vapour deposition
01/18/2012	EP1805353B1 Method for producing gan or algan crystals
01/12/2012	US20120006255 Method of manufacturing single crystal
01/11/2012	EP2405038A1 Crucible, apparatus, and method for producing silicon carbide single crystals
01/11/2012	EP2403975A1 Gas injectors for cvd systems with the same
01/11/2012	CN102312192A Seed crystal layer-assisting surface texturing zinc oxide transparent conductive film and preparation method thereof
01/11/2012	CN102312190A Methods for sputtering a resistive transparent thin film for use in cadmium telluride based photovoltaic devices
01/05/2012	WO2012003304A1 Growth of large aluminum nitride single crystals with thermal-gradient control
01/05/2012	US20120000415 Large Area Nitride Crystal and Method for Making It
01/05/2012	US20120000414 Growth of large aluminum nitride single crystals with thermal-gradient control
01/04/2012	CN102308031A Crucible for producing single-crystal silicon carbide, and production apparatus and production method for producing single-crystal silicon carbide
01/04/2012	CN101624725B Molecular beam epitaxial method for growing non-antiphase domain gallium arsenide film on germanium substrate
12/2011
12/29/2011	US20110316021 Epitaxial growth method and devices
12/22/2011	WO2011157429A1 Method for producing diamond layers and diamonds produced by the method
12/22/2011	US20110312176 Forming an electrode having reduced corrosion and water decomposition on surface using an organic protective layer
12/22/2011	US20110312164 Forming an electrode having reduced corrosion and water decomposition on surface using a custom oxide layer
12/22/2011	US20110308449 Crucible for producing single-crystal silicon carbide, and production apparatus and production method for producing single-crystal silicon carbide
12/21/2011	CN102286721A 采用磁控溅射法制备碲化镉纳米线阵列的方法 Magnetron sputtering method using cadmium telluride nanowire arrays
12/08/2011	US20110300354 Combined substrate and method for manufacturing same
12/08/2011	DE102010029756A1 Herstellungsverfahren für einen SiC-Volumeneinkristall mit großer Facette und einkristallines SiC-Substrat mit homogener Widerstandsverteilung Manufacturing method of a SiC bulk single crystal with a large facet and SiC substrate with a homogeneous resistance distribution
12/08/2011	DE102010029755A1 Producing silicon carbide volume single crystal, useful for producing semiconductor device, comprises e.g. producing silicon carbide growth gas phase in crystal growth region of crucible, and growing silicon carbide volume single crystal
12/07/2011	CN102268738A 一种Sb-Te-Ti相变存储材料 One kind of Sb-Te-Ti phase change memory material
12/07/2011	CN102268735A 一种提高4H-SiC单晶晶型稳定性的方法 An enhanced type 4H-SiC single crystal stability methods
12/01/2011	US20110290174 One hundred millimeter single crystal silicon carbide wafer
12/01/2011	DE10248964B4 Verfahren zur Sublimationszüchtung von Aluminiumnitrid-Einkristallen A method of sublimation growth of aluminum nitride single crystals
11/2011
11/30/2011	EP2390386A1 Method for producing nitride semiconductor crystal, nitride semiconductor crystal, and apparatus for producing nitride semiconductor crystal
11/30/2011	CN202054923U 硫硒化镉锌纳米线的制备装置 Preparation device zinc cadmium sulfide selenide nanowires
11/30/2011	CN102260906A 一种制备Ge包覆GeTe纳米线同轴异质结的方法 A method for preparing a coaxial Ge coated GeTe nanowire heterostructures
11/30/2011	CN102260905A 一种制备Ge纳米管的方法 A method of preparing Ge nanotubes
11/30/2011	CN101724894B 一种GaAs基InAs<sub>1-x</sub>Sb<sub>x</sub>/InSb多量子阱薄膜的分子束外延生长方法 One kind of GaAs-based InAs <sub> 1-x </ sub> Sb <sub> x </ sub> / InSb quantum wells more films molecular beam epitaxy method
11/29/2011	CA2581856C Low micropipe 100 mm silicon carbide wafer
11/26/2011	CA2741772A1 Method and device for accurately measuring the incident flux of ambient particles in a high or ultra-high vacuum environment
11/23/2011	EP2388359A2 Method and system with seed holder for growing silicon carbide single crystals
11/17/2011	US20110278595 Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor device
11/17/2011	US20110278594 Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor device
11/17/2011	US20110278593 Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor device
11/17/2011	US20110277681 Gas injectors for cvd systems with the same
11/16/2011	CN101691670B Method for growing P-type zinc oxide film by using target doped with zinc phosphate
11/09/2011	EP2385158A1 Silicon carbide single crystal and silicon carbide single crystal wafer
11/09/2011	CN102239282A Microwave-assisted synthesis of carbon and carbon-metal composites from lignin, tannin and asphalt derivatives
11/09/2011	CN101603207B Method for preparing network branched silicon nitride single crystal nanostructure with high purity and high yield
11/03/2011	WO2011137202A1 Method for controlled growth of silicon carbide and structures produced by same
11/03/2011	WO2011135913A1 Silicon carbide crystal and method for producing silicon carbide crystal
11/03/2011	US20110266556 Method for controlled growth of silicon carbide and structures produced by same
11/03/2011	US20110265710 Film forming apparatus and method
11/03/2011	US20110265709 Nitride Semiconductor Crystal Manufacturing Method, Nitride Semiconductor Crystal, and Nitride Semiconductor Crystal Manufacturing Apparatus
11/03/2011	US20110265708 Method of heteroepitaxy
11/03/2011	CA2775923A1 Silicon carbide crystal and method of manufacturing silicon carbide crystal
11/02/2011	EP2383373A1 Apparatus for producing nitride semiconductor crystal, method for producing nitride semiconductor crystal, and nitride semiconductor crystal
11/02/2011	CN102230224A Thermal evaporation synthesis method of Ag2Se nanowire and preparation method of electric measuring device
11/02/2011	CN101351579B Method for growing III nitride single crystal
10/2011
10/27/2011	US20110262773 Ammonothermal Method for Growth of Bulk Gallium Nitride
10/27/2011	US20110262681 Silicon carbide substrate and method for manufacturing silicon carbide substrate
10/27/2011	US20110262680 Silicon carbide substrate and method for manufacturing silicon carbide substrate
10/26/2011	CN102226297A Oblique ZnO nanowire array and growth method thereof
10/26/2011	CN102226294A Modulation method for silicon-based GaN crystal structure with optimal field emission performance
10/25/2011	US8043687 Structure including a graphene layer and method for forming the same
10/20/2011	US20110254017 Manufacturing method for crystal, crystal, and semiconductor device
10/19/2011	CN1965111B Manufacture of cadmium mercury telluride
10/19/2011	CN101163824B Method of and system for forming sic crystals having spatially uniform doping impurities
10/12/2011	EP1346085B1 Method for producing group iii metal nitride based materials
10/06/2011	WO2011120495A1 Domain-structured ferroic element, method and apparatus for generating and for controlling the electrical conductivity of domain walls at room temperature in the elements and applications of the element
10/06/2011	US20110239932 Method for reducing defects in epitaxially grown on the group III-nitride materials
10/06/2011	US20110239930 Method for manufacturing silicon carbide single crystal
10/05/2011	EP2371997A1 Method for manufacturing crystals, in particular of silicon carbide, from gaseous phase
10/05/2011	EP1337683B1 Method for automatic organisation of microstructures or nanostructures and related device obtained
10/05/2011	CN101928982B Silicon carbide crystal growing device with double-chamber structure
09/2011
09/29/2011	WO2011065239A9 Method for producing monocrystal
09/29/2011	US20110237441 Method for producing metal substrates for hts coating arrangements
09/29/2011	US20110237078 SiC SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
09/29/2011	US20110233513 Enhanced bonding interfaces on carbon-based materials for nanoelectronic devices
09/29/2011	US20110232564 Method of growing gallium nitride crystal and method of manufacturing gallium nitride crystal
09/28/2011	EP2369040A1 In situ dopant implantation and growth of a III-nitride semiconductor body
09/28/2011	EP2368867A1 Dense, shaped articles constructed of a refractory material
09/28/2011	EP1443130B1 Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
09/28/2011	CN102201550A Unit mask, mask assembly and method for manufacturing display device
09/27/2011	US8025729 Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
09/22/2011	WO2011113605A1 Semipolar semiconductor crystal and method for producing it
09/22/2011	US20110229719 Manufacturing method for crystal, manufacturing apparatus for crystal, and stacked film

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