Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials
Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
07/2012
07/18/2012CN102586880A Preparation method of oriented ZeTe nanocrystals
07/12/2012US20120177902 Multiferroics that are both ferroelectric and ferromagnetic at room temperature
07/12/2012US20120174856 Method for making epitaxial structure
07/12/2012US20120174855 Method for making epitaxial structure
07/11/2012CN202329077U 一种蒸馏炉 One kind of distillation furnace
07/11/2012CN102569480A Cuprous oxide-based PIN-junction solar battery of nano structure and preparation method thereof
07/10/2012US8216369 System for forming SiC crystals having spatially uniform doping impurities
07/10/2012US8216366 Method for manufacturing a cubic silicon carbide single crystal thin film and semiconductor device based on the cubic silicon carbide single crystal thin film
07/05/2012WO2012090572A1 Silicon carbide substrate, semiconductor device, method for producing silicon carbide substrate, and method for producing semiconductor device
07/05/2012WO2012088996A1 Semi-insulating silicon carbide single crystal and growing method therefor
07/04/2012EP2470694A1 Doped transparent conductive oxide
07/04/2012CN102534800A Preparation method for In2Se3 nano material
07/04/2012CN102534764A Method for epitaxially growing type-II superlattice narrow-spectrum infrared photoelectric detector material
07/04/2012CN102534763A Graphite crucible for growing large-size silicon carbide single crystal by physical vapor deposition method and application thereof
07/04/2012CN102534762A Seed crystal bonding method for growing SiC crystals
07/04/2012CN101979723B Method for preparing p-type CdS nanowires
07/03/2012US8212259 III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates
06/2012
06/28/2012US20120164058 Method for manufacturing gallium nitride crystal and gallium nitride wafer
06/28/2012US20120162766 Polarizer, display device and manufacturing mehtod of polarizer
06/28/2012US20120161155 Silicon carbide substrate, semiconductor device, method of manufacturing silicon carbide substrate and method of manufacturing semiconductor device
06/26/2012CA2532362C Ultrahard diamonds and method of making thereof
06/21/2012WO2012079439A1 Process for growing silicon carbide single crystal by physical vapor transport method and annealing silicon carbide single crystal in situ
06/21/2012US20120156122 Method of producing silicon carbide crystal, and silicon carbide crystal
06/21/2012US20120153265 Solid solution inducing layer for weak epitaxy growth of non-planar phthalocyanine
06/21/2012US20120152165 Apparatus and method for manufacturing silicon carbide single crystal
06/20/2012CN102505144A Preparation method for directional growth of organic micro/nano structure
06/14/2012US20120145070 PROCESS FOR PRODUCING GRAPHENE/SiC COMPOSITE MATERIAL AND GRAPHENE/SiC COMPOSITE MATERIAL OBTAINED THEREBY
06/13/2012CN102492984A Apparatus and method of MBE isoepitaxial growth SrTiO3 film
06/13/2012CN101506959B Method for producing zinc oxide semiconductor crystal
06/12/2012US8197596 Crystal growth method and reactor design
06/07/2012WO2012074506A1 Graphene production using laser heated crystal growth
06/07/2012WO2012071661A1 Epitaxial deposition apparatus, gas injectors, and chemical vapor management system associated therewith
06/07/2012CA2819189A1 Epitaxial deposition apparatus, gas injectors, and chemical vapor management system associated therewith
06/06/2012CN101701358B Method for preparing high-quality large silicon carbide single crystal and silicon carbide single crystal prepared by same
06/06/2012CN101410950B Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
05/2012
05/31/2012US20120132139 Apparatus of manufacturing silicon carbide single crystal
05/31/2012US20120132132 Manufacturing method of silicon carbide single crystal
05/30/2012CN102482796A 掺杂的透明导电氧化物 A transparent conductive oxide doped
05/30/2012CN102477579A 获取ZnSe/ZnS光学基元的方法 Get ZnSe / ZnS optics primitive methods
05/24/2012WO2012031148A3 High throughput sapphire core production
05/23/2012CN102471930A Method for producing silicon carbide crystal, silicon carbide crystal, and device for producing silicon carbide crystal
05/23/2012CN101649487B Vertical-type furnace for alpha-HgI2 single crystal growth and growth method of alpha-HgI2 single crystal
05/17/2012US20120119223 Gallium Nitride Semiconductor Structures with Compositionally-Graded Transition Layer
05/17/2012US20120118222 METHOD OF MANUFACTURING GaN-BASED FILM
05/10/2012WO2012059844A1 Method of forming a composite substrate.
05/10/2012US20120112320 Nitride semiconductor crystal and production process thereof
05/03/2012US20120108436 Substrate, method of producing substrate, superconducting wire, and method of producing superconducting wire
05/03/2012US20120107218 Production method of silicon carbide crystal, silicon carbide crystal, and production device of silicon carbide crystal
05/03/2012US20120103262 Apparatus of manufacturing silicon carbide single crystal
05/03/2012US20120103249 Sic single crystal sublimation growth method and apparatus
04/2012
04/26/2012US20120098102 Defect reduction of non-polar and semi-polar iii-nitrides with sidewall lateral epitaxial overgrowth (sleo)
04/25/2012CN101064258B 高取向性硅薄膜形成方法、三维半导体器件及其制造方法 The highly oriented silicon film forming method, three-dimensional semiconductor device and its manufacturing method
04/19/2012WO2012049304A1 Method for fabricating a free-standing group iii nitride substrate
04/19/2012US20120091436 Ordered organic-organic multilayer growth
04/17/2012CA2674770C New process for obtaining crystalline form v of agomelatine
04/12/2012US20120088107 Method of forming self-assembly and uniform fullerene array on surface of substrate
04/12/2012US20120086001 Method for production of zinc oxide single crystals
04/12/2012US20120085278 High productivity thin film deposition method and system
04/11/2012CN102414349A 制造单晶的方法 The method of manufacturing a single crystal
04/11/2012CN101812723B 基于物理气相传输技术生长碳化硅体单晶方法及其装置 Physical vapor transport technique bulk single crystal silicon carbide growth based method and apparatus
04/10/2012US8152919 Epitaxial silicon wafer and fabrication method thereof
04/10/2012US8152918 Methods for epitaxial silicon growth
04/04/2012CN102405310A Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal
04/04/2012CN102400224A Silicon carbide single crystal and manufacturing method of the same
04/04/2012CN102400213A 外延生长氧化铝单晶薄膜的方法 Epitaxially growing a single crystal thin film using alumina
04/04/2012CN102400212A 获取多晶体光学硒化锌的方法 A polycrystalline zinc selenide optical acquisition method
04/03/2012US8147991 One hundred millimeter single crystal silicon carbide wafer
03/2012
03/29/2012WO2012039257A1 Apparatus for producing single crystals
03/29/2012US20120074403 METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE
03/29/2012US20120073495 Manufacturing method of silicon carbide single crystal
03/28/2012CN102395716A Apparatus for producing silicon carbide single crystal and method for producing silicon carbide single crystal
03/28/2012CN102392305A Preparation method of yttrium aluminum garnet crystal film doped with metal ions
03/28/2012CN102104078B Method for preparing one-dimensional nanometer material with ZnO/ZnS core-shell structure and single crystal ZnS nanotube
03/22/2012US20120070605 Silicon carbide ingot, silicon carbide substrate, manufacturing method thereof, crucible, and semiconductor substrate
03/22/2012US20120068192 CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES
03/21/2012EP2432020A1 Semiconductor device
03/21/2012EP2432002A1 Silicon carbide substrate and semiconductor device
03/21/2012EP2432001A1 Method for producing semiconductor substrate
03/21/2012EP2432000A1 Silicon carbide substrate, semiconductor device, and method for manufacturing silicon carbide substrate
03/21/2012CN102388162A Gas injectors for cvd systems with the same
03/21/2012CN102383191A Preparation method of (103) oriented yttrium-barium-copper-oxide (YBa2Cu3O7-delta, YBCO) high-temperature superconductive film
03/21/2012CN101241883B Preparation method of a coating of gallium nitride
03/15/2012US20120060751 Manufacturing method of silicon carbide single crystal
03/15/2012US20120060750 Method of forming crystalline oxide semiconductor film
03/15/2012US20120060749 Apparatus of manufacturing silicon carbide single crystal and method of manufacturing silicon carbide single crystal
03/14/2012CN202164388U 一种SiC单晶生长籽晶粘接压盘 One kind of seed bonded SiC single crystal growth platen
03/14/2012CN102373506A Method for epitaxially growing graphene on SiC substrate, graphene and graphene device
03/13/2012US8133318 Epitaxially coated silicon wafer with 110 orientation and method for producing it
03/08/2012WO2012031148A2 High throughput sapphire core production
03/08/2012WO2012029864A1 Method for producing silicon carbide single crystal
03/07/2012CN202157144U 碳化硅籽晶粘接自动控制装置 Bonding the silicon carbide seed crystal automatic control device
03/01/2012WO2012026113A1 Radical source and molecular beam epitaxy apparatus
03/01/2012US20120052656 Dimensional silica-based porous silicon structures and methods of fabrication
02/2012
02/29/2012EP2423159A1 Methods of forming alpha and beta tantalum films with controlled and new microstructures
02/29/2012EP2423158A1 Methods of forming alpha and beta tantalum films with controlled and new microstructures
02/23/2012WO2012021977A1 Rare-earth-doped aluminum-gallium-oxide films in the corundum-phase and related methods
02/23/2012US20120045661 Rare-earth-doped aluminum-gallium-oxide films in the corundum-phase and related methods
02/23/2012US20120043644 Silicon wafer and manufacturing method
02/22/2012EP2420598A1 Apparatus for producing silicon carbide single crystal and method for producing silicon carbide single crystal
02/22/2012CN101724906B 一种用于生长高质量导电型碳化硅晶体的方法 A high conductivity type silicon carbide crystal growth method for
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