Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials
Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
12/2012
12/20/2012WO2012173409A2 Apparatus for fabricating ingot
12/20/2012US20120318198 Shield member and apparatus for growing single crystal equipped with the same
12/20/2012DE102009016137B4 Herstellungsverfahren für einen versetzungsarmen AlN-Volumeneinkristall und versetzungsarmes einkristallines AlN-Substrat Production process for a low-dislocation AlN bulk single and low dislocation single crystal AlN substrate
12/20/2012DE102009016133B4 Herstellungsverfahren für einen sauerstoffarmen AlN-Volumeneinkristall Method for producing a low-oxygen AlN bulk single
12/20/2012DE102009016131B4 Herstellungsverfahren für einen SiC-Volumeneinkristall mittels einer Gasbarriere und versetzungsarmes einkristallines SiC-Substrat Manufacturing method of a SiC bulk single crystal by means of a gas barrier and low dislocation single crystal SiC substrate
12/19/2012EP2535444A1 Method for producing silicon carbide crystal and silicon carbide crystal
12/19/2012CN102828251A Method for preparing aluminum nitride single crystal material
12/19/2012CN102828238A Method for improving surface temperature field of substrate wafer during epitaxial growth
12/19/2012CN102828237A Apparatus for preparing zinc selenide/zinc sulfide lamination polycrystal optical material
12/13/2012WO2012169828A2 Apparatus for fabricating ingot
12/13/2012WO2012169801A2 Apparatus for fabricating ingot
12/13/2012WO2012169789A2 Apparatus for fabricating ingot and method for fabricating ingot
12/12/2012CN101831701B Method for growing n-type transparent conducting ZnO crystal thin film by F doping
12/11/2012US8328935 Method of manufacturing polycrystalline silicon rod
12/06/2012WO2012165898A2 Apparatus and method for manufacturing ingot
12/06/2012US20120308758 Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot
12/06/2012US20120305983 Method for producing group-iii nitride semiconductor crystal, group-iii nitride semiconductor substrate, and semiconductor light emitting device
12/06/2012US20120304918 beta-Ga2O3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, Ga2O3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD
11/2012
11/29/2012WO2012161524A2 Apparatus for fabricating ingot
11/28/2012CN102803580A Molecular beam epitaxy apparatus for producing wafers of semiconductor material
11/28/2012CN102803579A Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus
11/28/2012CN102796988A Method for preparing highly ordered CuInS2 epitaxial film by using a sputtering method
11/22/2012US20120294790 Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot
11/22/2012DE102005017288B4 Verfahren zur Herstellung einer Halbleitervorrichtung mit einem Graben in einem Siliziumcarbid-Halbleitersubstrat A method of manufacturing a semiconductor device having a trench in a silicon carbide semiconductor substrate
11/21/2012EP2524978A1 Apparatus for producing silicon carbide single crystal
11/21/2012CN102226294B Modulation method for silicon-based GaN crystal structure with optimal field emission performance
11/15/2012US20120285370 Sublimation growth of sic single crystals
11/14/2012CN102181920B Method and device for preparing zinc cadmium sulfide selenide nanowires with fluorescence changing from ultraviolet to red
11/14/2012CN101698962B Method for accurately controlling growth and characterization of components of quaternary semiconductor direct bandgap material
11/07/2012CN102766903A Device, system and method for controlling gas concentration
11/06/2012US8303924 Production method for a low-dislocation bulk AlN single crystal and low-dislocation monocrystalline AlN substrate
11/01/2012US20120275984 Method for manufacturing silicon carbide single crystal, and silicon carbide substrate
10/2012
10/31/2012EP2518191A1 Template for epitaxial growth and process for producing same
10/31/2012EP2516699A1 Silicon nitride based crucible
10/31/2012EP2516692A1 Method for coating a substrate with aluminum-doped zinc oxide
10/31/2012CN102762761A Devices and method for precipitating a layer on a substrate
10/31/2012CN101311374B Yttrium-iron-garnet film structure and preparation method
10/26/2012WO2012144872A2 Apparatus and method for fabricating ingot
10/26/2012WO2012144851A2 Apparatus for fabricating ingot
10/25/2012US20120269717 Method for growth of high quality graphene films
10/25/2012US20120267606 Group iii nitride crystal substrate, epilayer-containing group iii nitride crystal substrate, semiconductor device and method of manufacturing the same
10/25/2012DE10102315B4 Verfahren zum Herstellen von Halbleiterbauelementen und Zwischenprodukt bei diesen Verfahren A method of manufacturing semiconductor devices and an intermediate in this process
10/23/2012US8293011 Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal
10/18/2012WO2012139714A1 Evaporator cell closure device for a coating plant
10/18/2012US20120260851 Method of manufacturing transparent oxide thin film
10/17/2012CN102741446A Method for coating a substrate with aluminum-doped zinc oxide
10/17/2012CN102732955A Semiconductor epitaxial wafer gripper used for electron beam evaporation
10/17/2012CN102732954A Monocrystalline high-K gate dielectric material and its preparation method
10/17/2012CN102732953A Technology and apparatus for growing single silicon carbide crystals through double seed crystal-assisted vapor transport method
10/11/2012WO2012136990A1 Apparatus and method for crystal growth
10/10/2012EP2508656A1 Process for producing single-crystal aluminum nitride
10/10/2012EP2508655A1 Method of producing silicon carbide monocrystals
10/10/2012EP2508653A1 Method for producing monocrystal
10/10/2012CN102725443A Silicon nitride based crucible
10/09/2012US8282733 Manufacturing method of semiconductor apparatus
10/04/2012WO2012131307A1 Crystal growth apparatus
10/03/2012CN102713028A Apparatus for producing silicon carbide single crystal
10/03/2012CN102703973A Method for growing zinc oxide crystal
10/03/2012CN102703972A Device for growing zinc oxide crystal
10/03/2012CN102703870A Nonmagnetic Ru film and production method thereof
10/03/2012CN101775644B Manganese oxide epitaxial film with anisotropic magnetoresistivity and preparation method and application thereof
09/2012
09/27/2012US20120241821 Heterostructure for electronic power components, optoelectronic or photovoltaic components
09/26/2012CN102689904A Method for preparing SiC nanowire and array thereof
09/26/2012CN101072901B Process for producing high quality large size silicon carbide crystals
09/20/2012US20120234231 Process for producing silicon carbide single crystals
09/19/2012CN202440568U Graphite crucible used for growing silicon carbide crystal bar
09/19/2012CN102686787A Silicon carbide substrate,semiconductor device,method for producing silicon carbide substrate,and method for producing semiconductor device
09/19/2012CN102677163A Preparation method of Al/Ge double-layer film with germanium crystal fractal cluster
09/18/2012US8268075 Method of producing zinc oxide semiconductor crystal
09/13/2012US20120227663 Oxide metal semiconductor superlattices for thermoelectrics
09/12/2012EP2496925A1 Measuring method for optically quantifying anti-phase domains in situ and use of the measuring method
09/12/2012CN202430332U Graphite crucible for growing silicon carbide single crystal by utilizing physical vapor deposition method
09/11/2012US8263424 Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth
09/11/2012US8262796 β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
09/05/2012CN101473075B Method for growing A1xGa1-xN crystal, and A1xGa1-xN crystal substrate
09/04/2012US8257494 Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications
09/04/2012US8257491 Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials
08/2012
08/23/2012WO2012112795A1 Enhanced deposition of layer on substrate using radicals
08/22/2012EP1509949B1 Formation of lattice-tuning semiconductor substrates
08/22/2012CN202390579U Graphite crucible for growing silicon carbide single crystal by using physic gaseous phase transport method
08/22/2012CN102644105A Method and device for growing silicon carbide crystal according to PVT (Physical Vapor Transport) method
08/15/2012EP2487280A1 Method for producing a 100 mm silicon carbide wafer with Low micropipe density
08/15/2012CN102115910B Preparation method of core shell type nanowire
08/09/2012DE102009004751B4 Thermisch isolierte Anordnung und Verfahren zur Herstellung eines SiC-Volumeneinkristalls Thermally insulated arrangement and method for manufacturing a SiC bulk single
08/08/2012EP1851368B1 Apparatus and process for crystal growth
08/07/2012US8236267 High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
08/07/2012US8236103 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer
08/07/2012CA2338846C Zinc oxide films containing p-type dopant and process for preparing same
08/02/2012WO2012102824A1 Device and method for making polycrystalline thin films
08/02/2012US20120192790 Apparatus with Two-Chamber Structure for Growing Silicon Carbide Crystals
08/01/2012CN202359230U Device for preparing aluminum nitride monocrystal
08/01/2012CN102618930A Method for preparing AlN crystal
07/2012
07/31/2012US8231728 Epitaxial growth process
07/31/2012US8231724 Reactor for polycrystalline silicon and polycrystalline silicon production method
07/25/2012EP2477944A1 Sublimation growth of sic single crystals
07/25/2012CN102605421A Furnace monocrystal isothermal annealing method and tool
07/19/2012US20120183767 Hexagonal reo template buffer for iii-n layers on silicon
07/19/2012US20120183466 Silicon carbide crystal and method of manufacturing silicon carbide crystal
07/19/2012US20120180716 Methods for epitaxial silicon growth
07/18/2012CN102597339A Silicon carbide crystal and method for producing silicon carbide crystal
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