| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 04/16/2013 | US8419856 Substrate processing apparatus |
| 04/11/2013 | WO2013019027A3 Apparatus for fabricating ingot and method for fabricating ingot |
| 04/11/2013 | WO2013015642A3 Method for growth of ingot |
| 04/11/2013 | WO2013015630A3 Raw material for growth of ingot, method for fabricating raw material for growth of ingot and method for fabricating ingot |
| 04/10/2013 | CN103038400A Growth of large aluminum nitride single crystals with thermal-gradient control |
| 04/10/2013 | CN101438391B Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
| 04/04/2013 | WO2013045190A1 Method for producing an opto-electronic semiconductor chip and corresponding opto-electronic semiconductor chip |
| 04/04/2013 | WO2012177048A3 Apparatus for fabricating ingot and method for fabricating ingot |
| 04/04/2013 | WO2012177012A3 Apparatus for fabricating ingot |
| 04/04/2013 | WO2012173438A3 Apparatus for fabricating ingot |
| 04/04/2013 | WO2012173409A3 Apparatus for fabricating ingot |
| 04/04/2013 | WO2012169828A3 Apparatus for fabricating ingot |
| 04/04/2013 | WO2012169801A3 Apparatus for fabricating ingot |
| 04/04/2013 | WO2012169789A3 Apparatus for fabricating ingot and method for fabricating ingot |
| 04/03/2013 | EP2575161A2 Method of growing semiconductor crystal |
| 04/03/2013 | EP2574690A1 A method of producing silicon carbide single crystal |
| 04/03/2013 | CN103021946A Method of preparing GaN monocrystal substrate in mechanical removal way |
| 04/03/2013 | CN102373506B Method for epitaxially growing graphene on SiC substrate, graphene and graphene device |
| 04/03/2013 | CN102286721B Method for preparing cadmium telluride nanowire array by using magnetron sputtering method |
| 04/02/2013 | US8409351 Production of bulk silicon carbide with hot-filament chemical vapor deposition |
| 04/02/2013 | US8409349 Film thickness measurement method, epitaxial wafer production process and epitaxial wafer |
| 03/28/2013 | WO2012165898A3 Apparatus and method for manufacturing ingot |
| 03/27/2013 | CN102995124A Seed crystal for aluminium nitride (ALN) crystal growth |
| 03/27/2013 | CN102995116A Aluminum nitride crystal preparation furnace and thermal-insulation device thereof |
| 03/26/2013 | US8404044 Epitaxial growth film formation method |
| 03/21/2013 | WO2012161524A3 Apparatus for fabricating ingot |
| 03/21/2013 | WO2012157970A3 Apparatus for attaching seed |
| 03/21/2013 | WO2012144872A3 Apparatus and method for fabricating ingot |
| 03/21/2013 | WO2012144851A3 Apparatus for fabricating ingot |
| 03/21/2013 | US20130071643 Silicon carbide substrate and method of manufacturing the same |
| 03/21/2013 | US20130069078 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate |
| 03/21/2013 | US20130068157 Method of manufacturing silicon carbide crystal |
| 03/19/2013 | US8398768 Methods of making an article of semiconducting material on a mold comprising semiconducting material |
| 03/14/2013 | WO2013002539A3 Apparatus and method for growing silicon carbide single crystal |
| 03/14/2013 | US20130061801 Method for manufacturing silicon carbide crystal |
| 03/14/2013 | US20130061800 High heat-resistant member, method for producing the same, graphite crucible and method for producing single crystal ingot |
| 03/13/2013 | CN102260905B Method for preparing Ge nanotubes |
| 03/13/2013 | CN102181825B Seed layer-assisted high performance TiO2-based transparent conductive film and preparation method thereof |
| 03/12/2013 | CA2583592C Process for the production of gan or aigan crystals |
| 03/06/2013 | EP2565301A1 Silicon carbide crystal and method for producing silicon carbide crystal |
| 03/06/2013 | EP2563950A1 Method for controlled growth of silicon carbide and structures produced by same |
| 03/06/2013 | CN101680109B Apparatus and method for manufacturing compound semiconductor single crystal |
| 02/28/2013 | WO2013027968A2 Apparatus for fabricating ingot, method for providing material, and method for fabricating ingot |
| 02/28/2013 | US20130052421 Monocrystalline epitaxially aligned nanostructures and related methods |
| 02/26/2013 | US8383494 Method for forming buffer layer for GaN single crystal |
| 02/26/2013 | US8382898 Methods for high volume manufacture of group III-V semiconductor materials |
| 02/21/2013 | US20130042801 Off-axis epitaxial lift off process |
| 02/19/2013 | US8377204 Group III nitride single crystal and method of its growth |
| 02/13/2013 | CN102925967A Method for growing silicon carbide mono-crystals through multi-crucible physical vapor transport technology, and device thereof |
| 02/12/2013 | US8372197 Substrate temperature accuracy and temperature control flexibility in a molecular beam epitaxy system |
| 02/07/2013 | WO2013019027A2 Apparatus for fabricating ingot and method for fabricating ingot |
| 02/07/2013 | WO2013019026A2 Apparatus for fabricating ingot |
| 02/06/2013 | EP2553692A1 Domain-structured ferroic element, method and apparatus for generating and for controlling the electrical conductivity of domain walls at room temperature in the elements and applications of the element |
| 02/06/2013 | CN102916122A Low-leakage-current semiconductor film heterojunction and preparation method thereof |
| 02/06/2013 | CN102912444A Silicon carbide crystal growth crucible for increasing utilization rate of power sources |
| 02/06/2013 | CN102912441A Cerium-terbium co-doped strontium titanate light-emitting film and preparation method thereof as well as organic electroluminescence device |
| 02/06/2013 | CN102912436A Preparation method of conical zinc oxide sub-micron rods and array thereof |
| 02/06/2013 | CN102912431A Silicon carbide crystal growth method for increasing primary feeding ingot thickness |
| 02/05/2013 | US8366892 Graphite electrode |
| 01/31/2013 | WO2013015642A2 Method for growth of ingot |
| 01/31/2013 | WO2013015630A2 Raw material for growth of ingot, method for fabricating raw material for growth of ingot and method for fabricating ingot |
| 01/31/2013 | DE19943064B4 Verfahren zur epitaktischen Abscheidung von Atomen oder Molekülen aus einem Reaktivgas auf einer Abscheidungsoberfläche eines Substrats Process for epitaxial deposition of atoms or molecules from a reactive gas on a deposition surface of a substrate |
| 01/30/2013 | CN202705569U Pressure control system for silicon carbide single crystal growing furnace |
| 01/30/2013 | CN202705565U Gas concentration control device |
| 01/30/2013 | CN102906316A Method for controlled growth of silicon carbide and structures produced by same |
| 01/30/2013 | CN102903784A Preparation of novel monocrystal thin-film solar cell |
| 01/30/2013 | CN102899723A One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| 01/30/2013 | CN102899718A Silicon carbide crystal growth method for increasing crystal growth rate |
| 01/24/2013 | WO2013011326A1 Vapour deposition process for the preparation of a phosphate compound |
| 01/23/2013 | CN101454487B Methods for controllable doping of aluminum nitride bulk crystals |
| 01/22/2013 | US8357243 Method for testing group III-nitride wafers and group III-nitride wafers with test data |
| 01/22/2013 | US8357242 Crystalline film devices, apparatuses for and methods of fabrication |
| 01/22/2013 | US8357241 Method of organic material vacuum evaporation and apparatus thereof |
| 01/17/2013 | DE102011107657A1 Monolithische integrierte Halbleiterstruktur Monolithic integrated semiconductor structure |
| 01/16/2013 | CN102877133A 碳化硅晶体生长炉 Silicon carbide crystal growth furnace |
| 01/16/2013 | CN102877035A Method for preparing silicon-based germanium film with low-temperature buffer layer by means of cyclic stress modulation |
| 01/15/2013 | US8354618 Load chamber with dual heaters |
| 01/09/2013 | EP2543753A1 Method for producing silicon carbide crystal, silicon carbide crystal, and device for producing silicon carbide crystal |
| 01/09/2013 | CN102867859A Method and system for preparing two-color infrared detection material |
| 01/09/2013 | CN102347258B Base used for semiconductor epitaxial system |
| 01/08/2013 | US8349077 Large aluminum nitride crystals with reduced defects and methods of making them |
| 01/03/2013 | WO2013003605A1 Device and method for producing bulk single crystals |
| 01/03/2013 | US20130000547 Method for fixing silicon carbide seed crystal and method for producing single crystal silicon carbide |
| 01/03/2013 | DE102009048868B4 Herstellungsverfahren für einen SiC-Volumeneinkristall mittels einer thermischen Behandlung und niederohmiges einkristallines SiC-Substrat Manufacturing method of a SiC bulk single crystal by means of a thermal treatment, and low-resistance single-crystal SiC substrate |
| 01/02/2013 | EP2539479A1 Devices and method for precipitating a layer on a substrate |
| 01/02/2013 | CN202643906U Semiconductor vacuum heating pipe |
| 01/02/2013 | CN202643905U Temperature measurement structure suitable for SiC crystal system grown by PVT (physical vapor transportation) method |
| 01/02/2013 | CN202643904U Double-crucible induction heating physical vapor phase transmission device for monocrystalline growth |
| 01/02/2013 | CN102856451A Semiconductor epitaxial growth substrate |
| 01/02/2013 | CN102016135B Method of manufacturing Si(1-v-w-x)CwAlxNv substrate, method of manufacturing epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer |
| 01/01/2013 | US8344417 Gallium nitride semiconductor structures with compositionally-graded transition layer |
| 01/01/2013 | US8343276 High-temperature ionic state compound crystallization technology |
| 12/27/2012 | WO2012177048A2 Apparatus for fabricating ingot and method for fabricating ingot |
| 12/27/2012 | WO2012177012A2 Apparatus for fabricating ingot |
| 12/27/2012 | US20120325150 Apparatus for producing silicon carbide single crystal |
| 12/27/2012 | US20120325139 Eptaxial substrate, method for making the same and method for growing epitaxial layer using the same |
| 12/27/2012 | DE102009016132B4 Verfahren zur Herstellung eines langen Volumeneinkristalls aus SiC oder AlN und langer Volumeneinkristall aus SiC oder AlN A method for producing a bulk single long SiC or AlN and SiC or AlN bulk single long |
| 12/20/2012 | WO2012174410A1 Improved heteroepitaxial growth using ion implantation |
| 12/20/2012 | WO2012173520A1 Method for growing an aln monocrystal and device for implementing same |
| 12/20/2012 | WO2012173438A2 Apparatus for fabricating ingot |