| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 09/10/2013 | US8530353 SiC substrate and method of manufacturing the same |
| 09/10/2013 | US8529699 Method of growing zinc-oxide-based semiconductor and method of manufacturing semiconductor light emitting device |
| 09/10/2013 | US8529698 Ingan columnar nano-heterostructures for solar cells |
| 09/06/2013 | WO2013130873A1 Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture |
| 09/04/2013 | CN101724893B Method for preparing high-purity semi-insulating silicon carbide crystalloid |
| 09/03/2013 | US8524382 Oxide substrate and manufacturing method therefor |
| 08/29/2013 | US20130220223 Radical generator and molecular beam epitaxy apparatus |
| 08/27/2013 | US8518179 Controlling the emissive properties of materials-improved lasers and upconversion materials |
| 08/22/2013 | WO2013097842A3 Device for evaporating a substance for evaporation |
| 08/21/2013 | EP2629320A2 Mask structure and method for defect-free heteroepitaxial deposition |
| 08/21/2013 | EP2627804A1 Method for fabricating a free-standing group iii nitride substrate |
| 08/21/2013 | CN103255374A Method for preparing ordered one-dimensional organic nano wire array |
| 08/20/2013 | US8513101 Method of synthesizing nanowires |
| 08/20/2013 | US8512471 Halosilane assisted PVT growth of SiC |
| 08/14/2013 | CN103243382A Hot wall epitaxy device and method for growing bismuth telluride nano film |
| 08/14/2013 | CN102037164B Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby |
| 08/13/2013 | US8507950 Method of producing semiconductor wafer and semiconductor wafer |
| 08/13/2013 | US8506707 Substrate surface modifications for compositional gradation of crystalline materials and associated products |
| 08/06/2013 | US8501143 Single crystal diamond prepared by CVD |
| 07/31/2013 | EP2620531A1 Apparatus for producing single crystals |
| 07/31/2013 | CN203096233U Crucible structure for growth of silicon carbide crystal |
| 07/24/2013 | CN203085624U Epitaxial growth substrate of semiconductor |
| 07/23/2013 | US8491719 Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same |
| 07/17/2013 | EP2615629A1 Epitaxial substrate for semiconductor element, method for producing epitaxial substrate for semiconductor element, and semiconductor element |
| 07/17/2013 | CN203065640U Graphite seed crystal crucible cover for silicon carbide crystal growth |
| 07/17/2013 | CN203065637U Silicon carbide seed crystal for growth of silicon carbide crystals |
| 07/17/2013 | CN203065632U Reusable LED (Light-Emitting Diode) extension epitaxial substrate |
| 07/17/2013 | CN102312192B Seed crystal layer-assisting surface texturing zinc oxide transparent conductive film and preparation method thereof |
| 07/17/2013 | CN102260906B Method for preparing Ge coated GeTe nanowire coaxial heterojunction |
| 07/17/2013 | CN101892522B Method for preparing lead-titanate-lead-magnesium niobate films by pulsed laser deposition assisted by oxygen plasmas |
| 07/11/2013 | US20130177995 Highly epitaxial thin films for high temperature/highly sensitive chemical sensors for critical and reducing environment |
| 07/11/2013 | US20130174784 Single crystal manufacturing apparatus |
| 07/10/2013 | EP2612958A1 Method for producing silicon carbide single crystal, silicon carbide single crystal, and silicon carbide single crystal substrate |
| 07/10/2013 | CN203049096U Aluminum nitride crystal growth preparation furnace |
| 07/10/2013 | CN203049088U Aluminum nitride crystal preparation furnace and insulating device thereof |
| 07/10/2013 | CN103199105A Multiferroic material ferrite terbium p-n heterojunction, preparation method and application thereof |
| 07/10/2013 | CN103194795A Method for low-cost preparation of large-size monocrystal graphene |
| 07/10/2013 | CN103194793A Molecular beam epitaxy growth method of low-density InAs (Indium Arsenide) quantum dot |
| 07/04/2013 | WO2013100294A1 Apparatus for fabricating ingot and method of fabricating ingot |
| 07/04/2013 | US20130171403 Production method for an sic volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline sic substrate with a non-homogeneous lattice plane course |
| 07/04/2013 | US20130171402 Production method for an sic volume monocrystal with a homogeneous lattice plane course and a monocrystalline sic substrate with a homogeneous lattice plane course |
| 07/04/2013 | DE102012222843A1 Herstellungsverfahren für einen SiC-Volumeneinkristall mit inhomogenem Netzebenenverlauf und einkristallines SiC-Substrat mit inhomogenem Netzebenenverlauf Manufacturing method of a SiC bulk with inhomogeneous lattice course and monocrystalline SiC substrate having an inhomogeneous lattice History |
| 07/04/2013 | DE102012222841A1 Herstellungsverfahren für einen SiC-Volumeneinkristall mit homogenem Netzebenenverlauf und einkristallines SiC-Substrat mit homogenem Netzebenenverlauf Manufacturing method of a SiC bulk with a homogeneous lattice course and monocrystalline SiC substrate with a homogeneous lattice History |
| 07/03/2013 | EP2610895A1 Radical source and molecular beam epitaxy apparatus |
| 07/03/2013 | CN103189994A Microelectronic structures including cuprous oxide semiconductors and having improved P-N heterojunctions |
| 07/03/2013 | CN103184512A Silicon carbide single crystal growing apparatus with regulatable axial-temperature gradient |
| 07/03/2013 | CN102330058B Method for preparing multi-grade antimonytelluride nano wire harness array by adopting physical vapor deposition |
| 07/03/2013 | CN102084039B Process for production of AlxGa(1-x)N single crystal, AlxGa(1-x)N single crystal, and optics |
| 06/27/2013 | WO2013057732A3 Ordered stacked sheets of layered inorganic compounds, nanostructures comprising them, processes for their preparation and uses thereof |
| 06/27/2013 | US20130160699 Method of Manufacturing III-Nitride Crystal |
| 06/26/2013 | CN103180495A Method of forming a composite substrate |
| 06/26/2013 | CN103173863A Large-size silicon carbide (SiC) monocrystal growth device |
| 06/26/2013 | CN103173715A Preparation method of GaP film material |
| 06/25/2013 | US8470090 AlN crystal and method for growing the same, and AlN crystal substrate |
| 06/20/2013 | WO2013087060A1 Device for evaporating a material to be evaporated |
| 06/20/2013 | US20130153928 Method for controlled growth of silicon carbide and structures produced by same |
| 06/20/2013 | US20130153836 Method of producing silicon carbide single crystal, silicon carbide single crystal, and silicon carbide single crystal substrate |
| 06/19/2013 | CN103160928A Seed crystal processing method for growing SiC monocrystal with high quality |
| 06/19/2013 | CN103160785A Manufacture method for nitrogen-magnesium co-doping p-type zinc oxide film |
| 06/18/2013 | US8465588 Ammonothermal method for growth of bulk gallium nitride |
| 06/13/2013 | WO2013085417A1 Crucible for evaporating aluminium in an epitaxy process |
| 06/13/2013 | US20130150247 Methods for forming superconductor articles and xrd methods for characterizing same |
| 06/13/2013 | US20130149528 Oxide substrate and manufacturing method therefor |
| 06/13/2013 | US20130145984 Method of epitaxial growth effectively preventing auto-doping effect |
| 06/12/2013 | CN103147123A Micron-sized organic micromolecule single-crystal material and preparation method thereof |
| 06/12/2013 | CN103147038A Method of preparing GaAs thin-film material |
| 06/12/2013 | CN102021653B Method for growing silicon carbide single crystal by using high-density material block |
| 06/12/2013 | CN101061262B Low 1c screw dislocation 3 inch silicon carbide wafer |
| 06/11/2013 | US8460464 Method for producing single crystalline diamonds |
| 05/29/2013 | DE112011101519T5 Epitaxialfilmbildungsverfahren, Vakuumprozessierungsapparat, Herstellungsverfahren eines halbleitertechnischen Licht emittierenden Elements, halbleitertechnisches Licht emittierendes Element und Beleuchtungsvorrichtung Epitaxialfilmbildungsverfahren, Vakuumprozessierungsapparat, manufacturing method of a semiconductor light emitting element technology, semiconductor light emitting element and technical lighting device |
| 05/29/2013 | CN101092735B Multi-piece ceramic crucible and method for making thereof |
| 05/28/2013 | US8449671 Fabrication of SiC substrates with low warp and bow |
| 05/28/2013 | CA2719826C Aln bulk single crystal, semiconductor device using the same and method for producing the same |
| 05/23/2013 | US20130128366 Optical nanoantenna using single-crystalline silver nanowire, method of manufacturing the same and optical nanoantenna using single-crystalline metal nanowire |
| 05/22/2013 | EP2594970A1 Optical nanoantenna using single-crystalline silver nanowire, method of manufacturing the same and optical nanoantenna using single-crystalline metal nanowire |
| 05/16/2013 | DE102008063129B4 Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat Manufacturing method of a co-doped SiC bulk and high-resistance SiC substrate |
| 05/16/2013 | DE102008063124B4 Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat Manufacturing method for a uniformly doped SiC bulk and uniformly doped SiC substrate |
| 05/15/2013 | EP2592910A1 Atomic flux measurement device |
| 05/09/2013 | US20130112990 Gallium Nitride Devices with Compositionally-Graded Transition Layer |
| 05/08/2013 | EP2588651A1 Growth of large aluminum nitride single crystals with thermal-gradient control |
| 05/08/2013 | CN103088426A Method for reducing seed crystal growth face defects of silicon carbide crystals |
| 05/08/2013 | CN103088422A Preparation method of molybdenum trioxide nanorod |
| 05/08/2013 | CN103088411A Seed crystal fixing method for growth of silicon carbide crystals |
| 05/02/2013 | WO2013063020A1 SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In,Al,B,Ga)N |
| 05/02/2013 | WO2013061572A1 Film formation method, vacuum treatment device, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and illumination device |
| 05/02/2013 | WO2013036376A3 Methods for the epitaxial growth of silicon carbide |
| 05/01/2013 | CN103074680A Hafnium two-dimensional atomic crystal material and preparation method thereof |
| 05/01/2013 | CN101842524B Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal |
| 05/01/2013 | CN101553604B Process for producing single crystal of silicon carbide |
| 04/25/2013 | WO2013019026A3 Apparatus for fabricating ingot |
| 04/24/2013 | EP2584071A1 Low 1c screw dislocation 3 inch silicon carbide wafer |
| 04/24/2013 | CN103066108A Preparation method and application of ferrous acid terbium positive-negative (p-n) heterostructure |
| 04/24/2013 | CN103060904A Method for realizing growth of AlN monocrystals by growth mode regulation |
| 04/23/2013 | US8425803 Nanocrystal doped matrixes |
| 04/18/2013 | WO2013027968A3 Apparatus for fabricating ingot, method for providing material, and method for fabricating ingot |
| 04/18/2013 | US20130095294 Silicon carbide ingot and silicon carbide substrate, and method of manufacturing the same |
| 04/18/2013 | US20130095285 Silicon carbide substrate, silicon carbide ingot, and method of manufacturing the same |
| 04/18/2013 | US20130093288 Thermally oxidized seed layers for the production of textured electrodes and pzt devices and method of making |
| 04/17/2013 | CN102046857B AlN bulk single crystal, semiconductor device, and process for producing AlN single crystal bulk |
| 04/16/2013 | US8420041 High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal |