| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 02/26/2014 | CN103603037A 碳化硅籽晶粘接装置 SiC seed crystal bonding apparatus |
| 02/26/2014 | CN103603036A Crucible for growing silicon carbide crystal |
| 02/20/2014 | WO2014028283A2 SEED LAYER FOR ZnO AND DOPED-ZnO THIN FILM NUCLEATION AND METHODS OF SEED LAYER DEPOSITION |
| 02/20/2014 | US20140048014 Crystal Growth Apparatus |
| 02/20/2014 | US20140048013 SEED LAYER FOR ZnO AND DOPED-ZnO THIN FILM NUCLEATION AND METHODS OF SEED LAYER DEPOSITION |
| 02/12/2014 | EP2694706A1 Apparatus and method for crystal growth |
| 02/12/2014 | CN103572261A 石墨加热器 Graphite heater |
| 02/11/2014 | US8647705 Methods for forming superconductor articles and XRD methods for characterizing same |
| 02/05/2014 | EP2691562A1 Crystal growth apparatus |
| 02/04/2014 | US8642449 Silicon wafer |
| 02/04/2014 | US8641821 Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal |
| 01/30/2014 | WO2014017197A1 Method for manufacturing silicon carbide substrate |
| 01/29/2014 | EP2688847A1 Method for surfactant crystal growth of a metal-nonmetal compound |
| 01/28/2014 | US8636845 Metal heterocyclic compounds for deposition of thin films |
| 01/22/2014 | CN103526297A Method for preparing topological insulator Bi2Se3 film |
| 01/22/2014 | CN103526296A Method of manufacturing gallium nitride substrate and gallium nitride substrate manufactured by the same |
| 01/22/2014 | CN103526284A Ferrite niobate titanate or ferrite niobate epitaxial thin film, and preparation method and application thereof |
| 01/16/2014 | US20140014031 Apparatus and Method for Crystal Growth |
| 01/15/2014 | CN102703870B Nonmagnetic Ru film and production method thereof |
| 01/14/2014 | US8628615 Titanium-doped indium oxide films |
| 01/09/2014 | WO2014006320A2 Substrate comprising a layer of silicon and/or germanium and one or a plurality of objects of varying shapes |
| 01/09/2014 | WO2014006319A1 Substrate comprising a layer of silicon and/or germanium and one or a plurality of nanowires oriented perpendicular to the surface of the substrate |
| 01/08/2014 | EP2682503A1 Evaporation device for a vacuum-deposition apparatus and vacuum-deposition apparatus including such an evaporation device |
| 01/08/2014 | CN101415864B Large aluminum nitride crystals with reduced defects and methods of making them |
| 01/07/2014 | US8624266 Silicon carbide substrate, semiconductor device, method of manufacturing silicon carbide substrate and method of manufacturing semiconductor device |
| 01/02/2014 | US20140004303 Silicon carbide crystal and method of manufacturing silicon carbide crystal |
| 12/25/2013 | CN103469155A Method for preparing high-purity high-density WO3/S core-shell structure nano-particles |
| 12/24/2013 | US8613802 Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal |
| 12/19/2013 | WO2013188574A2 Multilayer substrate structure and method and system of manufacturing the same |
| 12/19/2013 | WO2013186556A1 Apparatus and method for bulk vapour phase crystal growth |
| 12/19/2013 | US20130333613 Method for surfactant crystal growth of a metal-nonmetal compound |
| 12/19/2013 | US20130333611 Lattice matching layer for use in a multilayer substrate structure |
| 12/18/2013 | CN103456608A Method for growing single crystals and polycrystals on semiconductor substrate at same time |
| 12/18/2013 | CN101985773B Seed crystal treatment method and silicon carbide mono-crystal growing method |
| 12/12/2013 | US20130327265 Method for producing silicon carbide crystal |
| 12/11/2013 | EP1486590B1 Multi-layer structure, and actuator element, capacitive element and filter element using the same |
| 12/11/2013 | CN103441181A InSb/GaSb quantum dot structure apparatus and growing method |
| 12/10/2013 | US8603898 Method for forming group III/V conformal layers on silicon substrates |
| 12/10/2013 | CA2556824C Vapor phase growth method |
| 12/05/2013 | US20130323534 Ferroelectric crystal film, electronic component, manufacturing method of ferroelectric crystal film, and manufacturing apparatus therefor |
| 12/05/2013 | US20130320275 Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and the Crystal Growth Process Thereof |
| 12/04/2013 | CN203320181U Hot wall epitaxy device for growth of bismuth telluride nano-films |
| 12/04/2013 | CN103422174A Low micropipe 100 mm silicon carbide wafer |
| 12/04/2013 | CN102154688B Rubrene weak epitaxial growth thin film and application thereof in organic thin-film transistor |
| 11/28/2013 | WO2013177496A1 Vanadium compensated, si sic single crystals of nu and pi type and the crystal growth process thereof |
| 11/28/2013 | US20130313603 Wavelength Converter for an LED, Method of Making, and LED Containing Same |
| 11/26/2013 | US8592862 Gallium nitride semiconductor structures with compositionally-graded transition layer |
| 11/26/2013 | US8592289 Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer |
| 11/26/2013 | US8591654 Device for manufacturing sic single crystal and method for the same |
| 11/26/2013 | US8591650 Method for forming crystalline semiconductor film, method for manufacturing thin film transistor, and method for manufacturing display device |
| 11/21/2013 | US20130305983 Physical Vapor Transport Growth System For Simultaneously Growing More Than One SIC Single Crystal and Method of Growing |
| 11/20/2013 | EP2664695A1 Physical vapor transport growth system for simultaneously growing more than one sic single crystal, and method of growing |
| 11/20/2013 | EP2414567B1 Semipolar semiconductor and its method of production |
| 11/20/2013 | EP2145987B1 Fabrication method of a group III nitride crystal substance |
| 11/20/2013 | CN203295659U Growing device for preparing aluminum nitride crystals through sublimation method |
| 11/19/2013 | US8585822 Method for testing group III-nitride wafers and group III-nitride wafers with test data |
| 11/19/2013 | US8585820 Abatement of reaction gases from gallium nitride deposition |
| 11/12/2013 | US8580035 Large aluminum nitride crystals with reduced defects and methods of making them |
| 11/06/2013 | EP2660367A1 Semi-insulating silicon carbide single crystal and growing method therefor |
| 11/06/2013 | CN103382546A A method for depositing crystalline titania nanoparticles and films |
| 11/06/2013 | CN102268735B Method for improving crystal form stability of 4H-SiC single crystal |
| 11/05/2013 | US8574529 Silicon carbide crystal and method of manufacturing silicon carbide crystal |
| 11/05/2013 | US8574528 Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime |
| 11/05/2013 | US8574364 GaN-crystal free-standing substrate and method for producing the same |
| 10/30/2013 | EP2657373A1 Crucible for growing crystals |
| 10/30/2013 | CN103374750A Seed crystal fixing method for SiC crystal grown by PVT (Physical Vapor Transportation) process |
| 10/30/2013 | CN103374749A Temperature measurement structure suitable for growing SiC crystal system by PVT (physical vapor transportation) method |
| 10/30/2013 | CN102689904B Method for preparing SiC nanowire and array thereof |
| 10/24/2013 | US20130280466 Large Diameter, High Quality SiC Single Crystals, Method and Apparatus |
| 10/23/2013 | EP2653591A1 Process for growing silicon carbide single crystal by physical vapor transport method and annealing silicon carbide single crystal in situ |
| 10/23/2013 | CN103361729A Method for preparing P-type aluminum nitride crystal |
| 10/23/2013 | CN103361718A Method for growing aluminium nitride monocrystal by using physical vapor transport method |
| 10/17/2013 | US20130269598 Process for growing silicon carbide single crystal by physical vapor transport method and annealing silicon carbide single crystal in situ |
| 10/16/2013 | CN101914811B One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| 10/15/2013 | US8557043 Method for testing group III-nitride wafers and group III-nitride wafers with test data |
| 10/15/2013 | US8557042 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate |
| 10/15/2013 | US8557041 Method for manufacturing P-I-N microcrystalline silicon structure for thin-film solar cells |
| 10/10/2013 | WO2013151045A1 Crystal growth method and crystal growth apparatus |
| 10/10/2013 | US20130263785 Crucible for Growing Crystals |
| 10/09/2013 | EP2646605A1 Epitaxial deposition apparatus, gas injectors, and chemical vapor management system associated therewith |
| 10/09/2013 | CN203229585U Long-life monocrystal silicon heater with uniform current field |
| 10/03/2013 | US20130255568 Method for manufacturing silicon carbide single crystal |
| 10/03/2013 | US20130255567 Method for making epitaxial base |
| 10/03/2013 | US20130255566 Method for making epitaxial structure |
| 10/03/2013 | US20130255565 Method for making epitaxial structure |
| 10/01/2013 | US8545628 Temperature-controlled purge gate valve for chemical vapor deposition chamber |
| 10/01/2013 | US8545626 Nitride semiconductor crystal and its production method |
| 09/25/2013 | EP2642267A1 Vacuum deposition apparatus with valve cells comprising a leakage detection device and method for detecting a leak in a vacuum deposition apparatus |
| 09/25/2013 | CN103320866A Molecular beam epitaxial (MBE) growth method of Bi element regulated and controlled GaAs-based nanowire crystal structure |
| 09/25/2013 | CN103320862A Colored moissanite gemstone and preparation method thereof |
| 09/25/2013 | CN103320851A Large-size 15R silicon carbide crystal preparation method |
| 09/24/2013 | US8540817 Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer |
| 09/19/2013 | US20130240876 Non-polar plane of wurtzite structure material |
| 09/19/2013 | US20130239881 Method and device for manufacturing silicon carbide single-crystal |
| 09/19/2013 | US20130239879 Load lock having secondary isolation chamber |
| 09/19/2013 | US20130239878 Apparatus and method for production of aluminum nitride single crystal |
| 09/12/2013 | WO2013131804A1 Semiconductor element with an oriented layer and method for the production thereof |
| 09/12/2013 | US20130233240 Methods and apparatuses for epitaxial films with high germanium content |
| 09/12/2013 | US20130233238 Methods and Mask Structures for Substantially Defect-Free Epitaxial Growth |
| 09/11/2013 | EP2635726A1 Method of forming a composite substrate. |