| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 09/03/2014 | EP2771502A1 SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In,Al,B,Ga)N |
| 09/02/2014 | US8821635 Method for growing Si-Ge semiconductor materials and devices on substrates |
| 08/28/2014 | WO2014130108A1 Vanadium doped sic single crystals and method thereof |
| 08/28/2014 | WO2014129137A1 Sic single crystal, sic wafer, sic substrate, and sic device |
| 08/27/2014 | EP2769006A2 Ordered stacked sheets of layered inorganic compounds, nanostructures comprising them, processes for their preparation and uses thereof |
| 08/21/2014 | US20140234194 Vanadium Doped SiC Single Crystals and Method Thereof |
| 08/21/2014 | US20140230724 Method for forming magnesium oxide thin film and processed plate |
| 08/21/2014 | US20140230721 Apparatus for fabricating ingot, method for providing material, and method for fabricating ingot |
| 08/21/2014 | US20140230720 Direct band gap wurtzite semiconductor nanowires |
| 08/14/2014 | WO2014123636A1 Sic crystal with low dislocation density |
| 08/14/2014 | WO2014123635A1 Sic crystal and wafer cut from crystal with low dislocation density |
| 08/14/2014 | WO2014123634A1 Method to reduce dislocations in sic crystal grown by sublimation (pvt) |
| 08/14/2014 | US20140224646 Silver selenide film stoichiometry and morphology control in sputter deposition |
| 08/12/2014 | US8803072 Method and device for accurately measuring the incident flux of ambient particles in a high or ultra-high vacuum environment |
| 08/07/2014 | US20140220325 Method to reduce dislocations in sic crystal growth |
| 08/07/2014 | US20140220298 Sic crystal with low dislocation density |
| 08/07/2014 | US20140220296 Sic crystal and wafer cut from crystal with low dislocation density |
| 08/07/2014 | US20140216348 Apparatus for fabricating ingot |
| 08/07/2014 | US20140216330 Apparatus for fabricating ingot and method for fabricating ingot |
| 08/05/2014 | US8795430 Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates |
| 07/31/2014 | US20140212671 Direct Growth of Graphene by Molecular Beam Epitaxy for the Formation of Graphene Heterostructures |
| 07/24/2014 | US20140202389 Apparatus for fabricating ingot |
| 07/24/2014 | DE112012004463T5 Schichtbildungsverfahren, vakuumverarbeitungsvorrichtung, herstellungsverfahren eines lichtemittierenden halbleiterelements, lichtemittierendes halbleiterelement und beleuchtungseinrichtung Layer formation process, vacuum processing apparatus, manufacturing process of a light emitting semiconductor elements, light-emitting semiconductor element and lighting device |
| 07/23/2014 | CN203728962U 一种分子束外延大规模生产设备中的衬底托板 A molecular beam epitaxy substrate pallets in large-scale production equipment |
| 07/17/2014 | US20140196659 Apparatus for fabricating ingot and method for fabricating ingot |
| 07/15/2014 | US8778513 Perovskite manganese oxide thin film |
| 07/10/2014 | US20140190413 Apparatus for fabricating ingot |
| 07/10/2014 | US20140190412 Apparatus for fabricating ingot |
| 07/10/2014 | US20140190402 Apparatus and method for manufacturing ingot |
| 07/10/2014 | US20140190401 Method, system, and apparatus for doping and for multi-chamber high-throughput solid-phase epitaxy deposition process |
| 07/09/2014 | CN103918060A 膜形成方法、真空处理设备、半导体发光元件制造方法、半导体发光元件和照明装置 Film-forming method, a vacuum processing apparatus, a semiconductor light emitting device manufacturing method, the semiconductor light emitting element and a lighting device |
| 07/09/2014 | CN103911152A 一种制备InAs<sub>0.2</sub>Sb<sub>0.8</sub>量子点的方法 A method for preparing InAs <sub> 0.2 </ sub> Sb <sub> 0.8 </ sub> quantum dot method |
| 07/03/2014 | US20140182516 Apparatus for fabricating ingot |
| 07/02/2014 | CN103898604A 单晶碳的制作方法及系统 Method of making single-crystal carbon and systems |
| 06/26/2014 | WO2014099790A1 Nanostructured whisker article |
| 06/25/2014 | CN103890243A 通过非-c-面(In,Al,B,Ga)N上的有限区域外延抑制弛豫 Through non -c- surface (In, Al, B, Ga) N on the limited area extension of inhibiting relaxation |
| 06/25/2014 | CN103882514A 一种半导体CdS/CdSSe异质结纳米线及其制备方法 A semiconductor CdS / CdSSe heterojunction nanowire and its preparation method |
| 06/19/2014 | US20140165905 Apparatus for fabricating ingot and method for fabricating ingot |
| 06/18/2014 | CN102400212B Method for obtaining polycrystal optical zinc selenide |
| 06/12/2014 | US20140158042 Apparatus for fabricating ingot |
| 06/11/2014 | CN102159755B Method for producing nitride semiconductor crystal, nitride semiconductor crystal, and apparatus for producing nitride semiconductor crystal |
| 06/10/2014 | US8747982 Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course |
| 06/10/2014 | US8747553 β-Ga2O3 single crystal growing method including crystal growth method |
| 06/04/2014 | CN103843160A Method for producing an opto-electronic semiconductor chip and corresponding opto-electronic semiconductor chip |
| 06/04/2014 | CN103834992A CaRuO3/La2/3Ca1/3MnO3/CaRuO3 epitaxial thin film with sandwich structure as well as preparation method and application thereof |
| 06/03/2014 | CA2662734C Process for depositing a thin film of a metal alloy on a substrate, and a metal alloy in thin-film form |
| 05/30/2014 | WO2014081654A1 Fixed cutter drill bit cutter elements including hard cutting tables made from cvd synthetic diamonds |
| 05/28/2014 | EP2734656A1 Vapour deposition process for the preparation of a phosphate compound |
| 05/28/2014 | CN203613305U 一种碳化硅单晶的生产装置 A silicon carbide single crystal manufacturing apparatus |
| 05/28/2014 | CN103820848A 一种在InP衬底上外延生长II型GaSb/InGaAs量子点的方法 An epitaxially grown on an InP substrate, type II GaSb / InGaAs quantum dot method |
| 05/28/2014 | CN102383191B (103)取向的钇钡铜氧高温超导薄膜的制备方法 Preparation method (103) oriented Y-Ba-Cu-O high-temperature superconductor thin film |
| 05/22/2014 | WO2014076933A1 Production method for semiconductor epitaxial wafer, semiconductor epitaxial wafer, and production method for solid-state imaging element |
| 05/22/2014 | WO2014076921A1 Production method for semiconductor epitaxial wafer, semiconductor epitaxial wafer, and production method for solid-state imaging element |
| 05/22/2014 | WO2014076893A1 Seed crystal for sic single-crystal growth, sic single crystal, and method of manufacturing the sic single crystal |
| 05/21/2014 | CN102405310B 氮化铝单晶的制造装置、氮化铝单晶的制造方法及氮化铝单晶 Apparatus for manufacturing an aluminum nitride single crystal, a method of manufacturing an aluminum nitride single crystal and the aluminum nitride single crystal |
| 05/21/2014 | CN102131964B 制造氮化物半导体晶体的装置、制造氮化物半导体晶体的方法和氮化物半导体晶体 The method of manufacturing a nitride semiconductor crystal apparatus, manufacturing nitride semiconductor crystal of the nitride semiconductor crystal and |
| 05/15/2014 | US20140131659 Gallium Nitride Devices With Aluminum Nitride Intermediate Layer |
| 05/15/2014 | DE112007001605B4 Zinkoxiddünnfilm vom p-Typ und Verfahren zur Ausbildung desselben und lichtemittierendes Element Zinc oxide thin film of the same p-type and method of forming and emitting element |
| 05/13/2014 | US8722526 Growing of gallium-nitrade layer on silicon substrate |
| 05/08/2014 | WO2014068838A1 Epitaxial wafer and method for manufacturing same |
| 05/07/2014 | CN102392305B 一种金属离子掺杂的钇铝石榴石晶体薄膜的制备方法 Method for preparing metal ion-doped yttrium aluminum garnet crystal films |
| 05/07/2014 | CN102308031B 碳化硅单晶制造用坩埚、以及碳化硅单晶的制造装置和制造方法 Crucible for producing a silicon carbide single crystal, and a manufacturing apparatus and manufacturing method for a silicon carbide single crystal |
| 05/01/2014 | US20140116329 Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon |
| 04/30/2014 | CN203569242U Crucible for growing SiC crystal |
| 04/30/2014 | CN103757692A Preparation method of ordered organic semiconductor mono-crystal array film |
| 04/29/2014 | US8709371 Method for growing group III-nitride crystals in supercritical ammonia using an autoclave |
| 04/22/2014 | US8702865 AlxGa1-xN crystal substrate |
| 04/17/2014 | US20140106182 High Coercivity Magnetic Film for Use as a Hot Seed in a Magnetic Write Head and Method to Grow It |
| 04/16/2014 | CN203546203U Crucible for SIC crystal growth |
| 04/15/2014 | US8696809 Manufacturing method of epitaxial silicon wafer and substrate cleaning apparatus |
| 04/10/2014 | US20140097446 Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer |
| 04/09/2014 | CN103715309A New technology for preparing single band difference superlattice thin film solar cell by using pulse laser method |
| 04/09/2014 | CN102345162B One-dimensional axial type nano zinc oxide / zinc sulfide heterojunction and preparation method thereof |
| 04/08/2014 | US8691012 Method of manufacturing zinc oxide nanowires |
| 04/08/2014 | US8691011 Method for metal-free synthesis of epitaxial semiconductor nanowires on si |
| 04/03/2014 | WO2014006320A3 Substrate comprising a layer of silicon and/or germanium and one or a plurality of objects of varying shapes |
| 04/03/2014 | US20140093744 Method for depositing crystalline titania nanoparticles and films |
| 04/03/2014 | US20140093671 Large aluminum nitride crystals with reduced defects and methods of making them |
| 04/03/2014 | US20140091325 SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMICONDUCTOR DEVICE |
| 04/02/2014 | CN103703161A Vapour deposition process for the preparation of a phosphate compound |
| 04/02/2014 | CN103696012A Preparation method of high-uniformity high-yield semi-insulation silicon carbide substrate |
| 04/02/2014 | CN102201550B Unit mask, mask assembly and method for manufacturing display device |
| 04/02/2014 | CN101798706B Method for extending and growing graphene on SiC substrate |
| 04/01/2014 | US8685549 Nanocomposites for ultra high density information storage, devices including the same, and methods of making the same |
| 04/01/2014 | CA2532384C Annealing single crystal chemical vapor deposition diamonds |
| 03/27/2014 | WO2014045252A1 Method for forming an epitaxial silicon layer |
| 03/27/2014 | US20140082916 Apparatus for attaching seed |
| 03/26/2014 | CN103668453A Two-dimensional silylene film and preparation method thereof |
| 03/26/2014 | CN103668444A Method and device for growing CdS single crystal |
| 03/26/2014 | CN103668069A Two-dimensional silylene film and preparation method thereof |
| 03/20/2014 | US20140077222 Gallium Nitride Devices with Aluminum Nitride Alloy Intermediate Layer |
| 03/19/2014 | CN103643295A Method for preparing raw material for vapor-method aluminum nitride crystal growth |
| 03/19/2014 | CN103643287A Germanium olefine two-dimensional atom crystal material and its preparation method |
| 03/18/2014 | US8673074 Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) |
| 03/12/2014 | CN203474959U Epitaxial wafer base disc |
| 03/12/2014 | CN103628141A Method for homogenizing crystalline quality of SiC monocrystal |
| 03/12/2014 | CN101469452B Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal |
| 03/06/2014 | WO2014033649A1 Method for depositing an aluminium nitride layer |
| 03/06/2014 | US20140065368 Superhydrophobic films and methods for making superhydrophobic films |
| 02/27/2014 | DE112012002470T5 Verfahren zur Züchtung des AIN-Einkristalls und Vorrichtung zu seiner Umsetzung Processes for the production of AlN single crystal and apparatus for its implementation |