Patents for B24B 37 - Lapping machines or devices; Accessories (20,836)
08/2002
08/28/2002CN1366547A Polishing composition and magnetic recording disk substrate polished with polishing composition
08/27/2002US6440319 Method and apparatus for predicting process characteristics of polyurethane pads
08/27/2002US6440263 Indirect endpoint detection by chemical reaction and chemiluminescence
08/27/2002US6440186 Polishing composition and polishing method employing it
08/27/2002US6439989 Polymeric polishing pad having continuously regenerated work surface
08/27/2002US6439987 Tool and method for the abrasive machining of a substantially planar surface
08/27/2002US6439984 Molded non-abrasive substrate carrier for use in polishing operations
08/27/2002US6439981 Arrangement and method for polishing a surface of a semiconductor wafer
08/27/2002US6439980 Workpiece carrier and polishing apparatus having workpiece carrier
08/27/2002US6439978 Substrate polishing system using roll-to-roll fixed abrasive
08/27/2002US6439977 Rotational slurry distribution system for rotary CMP system
08/27/2002US6439976 Polishing tape
08/27/2002US6439972 Polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method
08/27/2002US6439971 Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device
08/27/2002US6439970 Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
08/27/2002US6439968 Polishing pad having a water-repellant film theron and a method of manufacture therefor
08/27/2002US6439967 Microelectronic substrate assembly planarizing machines and methods of mechanical and chemical-mechanical planarization of microelectronic substrate assemblies
08/27/2002US6439965 Polishing pad and surface polishing method
08/27/2002US6439964 Method of controlling a polishing machine
08/27/2002US6439963 System and method for mitigating wafer surface disformation during chemical mechanical polishing (CMP)
08/27/2002US6439962 Cleaning apparatus
08/22/2002WO2002065529A2 Chemical-mechanical planarization using ozone
08/22/2002WO2002064315A1 Polishing disk with end-point detection port
08/22/2002WO2002064314A1 Method and apparatus for electrochemical planarization of a workpiece
08/22/2002WO2002016080A8 Substrate supporting carrier pad
08/22/2002WO2001063655A8 Chemical-mechanical polishing device, damascene wiring forming device, and damascene wiring forming method
08/22/2002WO2000012264A9 Polishing pad having open area which varies with distance from initial pad surface
08/22/2002US20020115734 Method of altering and preserving the surface properties of a polishing pad and specific applications therefor
08/22/2002US20020115397 System and method for CMP head having multi-pressure annular zone subcarrier material removal control
08/22/2002US20020115392 Wafer planarization apparatus and planarization method thereof
08/22/2002US20020115388 System and method for reducing surface defects in integrated circuits
08/22/2002US20020115387 Double-side polishing process with reduced scratch rate and device for carrying out the process
08/22/2002US20020115385 Composite polishing pads for chemical-mechanical polishing
08/22/2002US20020115384 Fixed-abrasive chemical-mechanical planarization of titanium nitride
08/22/2002US20020115380 Polishing end point detecting device for wafer polishing apparatus
08/22/2002US20020115379 Polishing disk with end-point detection port
08/22/2002US20020115283 Planarization by selective electro-dissolution
08/22/2002US20020112758 Pressure vessel systems and methods for dispensing liquid chemical compositions
08/22/2002US20020112343 Determination of track width of magnetoresistive sensors during magnetic head fabrication using magnetic fields
08/21/2002EP1232835A2 Wafer planarization apparatus and planarization method thereof
08/21/2002CN1364667A Multilayer folding riffled steel for knife and sword and its producing method
08/20/2002US6437868 In-situ automated contactless thickness measurement for wafer thinning
08/20/2002US6436834 Abrasion accelerator enhances the removal rate of a dielectric layer by chelation in either an acidic or a basic medium; methyl glycinate, glycinamide, aminoguanidine, semicarbazide, guanidine, urea, formamidine, acetamidine, formamide,
08/20/2002US6436830 Delivering processed slurry to the polishing device. the slurry processor including a metal separator for separating metal particles, polished from the semiconductor wafer, from the used slurry. the slurry can be continuously recirculated
08/20/2002US6436828 Chemical mechanical polishing using magnetic force
08/20/2002US6436811 Method of forming a copper-containing metal interconnect using a chemical mechanical planarization (CMP) slurry
08/20/2002US6436302 Post CU CMP polishing for reduced defects
08/20/2002US6436228 Substrate retainer
08/20/2002US6435958 Abrasive means and a grinding process
08/20/2002US6435957 Wafer polishing pad centering apparatus
08/20/2002US6435956 Wafer holder and polishing device
08/20/2002US6435955 Abrasive machine
08/20/2002US6435952 Apparatus and method for qualifying a chemical mechanical planarization process
08/20/2002US6435950 Pressurized delivery method for abrasive particulate material
08/20/2002US6435949 Workpiece polishing apparatus comprising a fluid pressure bag provided between a pressing surface and the workpiece and method of use thereof
08/20/2002US6435948 Magnetic finishing apparatus
08/20/2002US6435947 CMP polishing pad including a solid catalyst
08/20/2002US6435945 Chemical mechanical polishing with multiple polishing pads
08/20/2002US6435944 Chemical mechanical polishing (cmp); peroxycarboxylic acid or urea peroxyacid which dissociates into oxidizer and complexing agent; abrasive slurry; minimizing overetching; prevents dishing
08/20/2002US6435943 Method of chemical mechanical polishing organic silicon material with low dielectric constant
08/20/2002US6435942 Chemical mechanical polishing processes and components
08/20/2002US6435941 Apparatus and method for chemical mechanical planarization
08/15/2002WO2002062917A1 Cerium based abrasive material and method for preparation thereof
08/15/2002WO2002062727A1 Porous ceramic and method for preparation thereof, and microstrip substrate
08/15/2002WO2002062528A2 Chemical mechanical machining and surface finishing
08/15/2002WO2002062527A1 Abrasive article suitable for modifying a semiconductor wafer
08/15/2002WO2002062523A1 Surface polishing method and apparatus
08/15/2002WO2002033737A3 Multiprobe detection system for chemical-mechanical planarization tool
08/15/2002WO2002021581A3 Method for uniform polish microelectronic device
08/15/2002WO2002016075A3 Cmp apparatus with an oscillating polishing pad rotating in the opposite direction of the wafer
08/15/2002WO2001052307A9 Semiconductor workpiece proximity plating methods and apparatus
08/15/2002WO2001041973A9 Chemical-mechanical polishing method
08/15/2002US20020111125 Flattening and machining method and apparatus
08/15/2002US20020111124 Method and apparatus for uniformly planarizing a microelectronic substrate
08/15/2002US20020111123 Method and apparatus for uniformly planarizing a microelectronic substrate
08/15/2002US20020111122 Work piece carrier with adjustable pressure zones and barriers and a method of planarizing a work piece
08/15/2002US20020111121 Method and apparatus for electrochemical-mechanical planarization
08/15/2002US20020111120 Fixed abrasive article for use in modifying a semiconductor wafer
08/15/2002US20020111027 Polishing compositions for noble metals
08/15/2002US20020111026 Polishing uisng ozone and abrasives
08/15/2002US20020110661 Abrasive molding and abrasive disc provided with same
08/15/2002US20020109122 Clean aqueous planarizing solution consists of an etchant selected from oxalic acid, ascorbic acid and phosphoric acid and a buffer
08/15/2002US20020108861 Platen of conductive material is disposed proximate to the polishing pad and is configured to have a negative charge during planarization process; demetallization of a workpiece surface such as semiconductor
08/15/2002CA2435732A1 Chemical mechanical machining and surface finishing
08/14/2002EP1230068A1 Method and apparatus for lapping of workpieces
08/14/2002EP1124666B1 Use of zeta potential during chemical mechanical polishing for end point detection
08/14/2002CN2505234Y Magnetic equalizing star lapping machine
08/14/2002CN2505233Y Lapping device for internal wall of curved elbow
08/14/2002CN2505232Y Self-turning abrasive disk pressing star lapping machine
08/14/2002CN1364107A Method and apparatus for polishing outer peripheral chamfered part of wafer
08/14/2002CN1089050C Polishing method, device and buff wheel therefor
08/13/2002US6432823 Off-concentric polishing system design
08/13/2002US6432728 Method for integration optimization by chemical mechanical planarization end-pointing technique
08/13/2002US6432258 Apparatus for and method of polishing workpiece
08/13/2002US6431968 Carrier head with a compressible film
08/13/2002US6431964 Planarization apparatus and method
08/13/2002US6431960 Fixed abrasive polishing pad
08/13/2002US6431959 System and method of defect optimization for chemical mechanical planarization of polysilicon
08/13/2002US6431957 Directional flow control valve with recirculation for chemical-mechanical polishing slurries
08/13/2002US6431953 CMP process involving frequency analysis-based monitoring