| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
|---|
| 03/24/1987 | US4652894 Copper or silver complexes |
| 02/10/1987 | US4642665 Vertically layered MOMOM tunnel device |
| 02/10/1987 | US4642664 Electrical device made of partially pryolyzed polymer |
| 12/30/1986 | US4633278 Horizontally layered MOMOM notch tunnel device |
| 12/16/1986 | US4630081 MOMOM tunnel emission transistor |
| 11/20/1986 | EP0201860A2 Multilayered article including crystallization inhibiting layer and method for fabricating same |
| 10/22/1986 | EP0198624A1 Overvoltage protection device |
| 10/22/1986 | EP0198346A2 Solid-state threshold devices using punch-through |
| 10/08/1986 | EP0196975A2 Solid electromagnetic wave amplifier |
| 10/08/1986 | EP0196891A1 Circuit protection device |
| 10/07/1986 | CA1212470A1 Electronic matrix arrays and method for making, parallel preprogramming or field programming the same |
| 09/23/1986 | CA1211860A1 Cryogenic transistor with a superconducting base and a semiconductor-isolated collector |
| 07/29/1986 | CA1208780A1 Electronic matrix arrays and method for making the same |
| 07/02/1986 | EP0186346A2 Vertically layered momom tunnel device |
| 07/02/1986 | EP0186345A2 Horizontally layered momom notch tunnel device |
| 07/01/1986 | US4598338 Reusable fast opening switch |
| 07/01/1986 | US4597162 Method for making, parallel preprogramming or field programming of electronic matrix arrays |
| 05/07/1986 | EP0180104A2 Microwave device |
| 03/25/1986 | US4577979 Electrical temperature pyrolyzed polymer material detector and associated circuitry |
| 03/11/1986 | US4575741 Cryogenic transistor with a superconducting base and a semiconductor-isolated collector |
| 01/21/1986 | US4566023 Squeezable electron tunnelling junction |
| 01/16/1986 | WO1986000470A1 Method for fabricating electronic elements |
| 12/04/1985 | EP0163031A2 Superconducting transistor |
| 10/08/1985 | US4545111 Method for making, parallel preprogramming or field programming of electronic matrix arrays |
| 08/13/1985 | US4534623 Horizontally-stacked metal-insulator-metal element for electro-optical device and method for manufacture |
| 06/19/1985 | EP0144604A2 Electronic matrix arrays and method for making the same |
| 06/18/1985 | US4523811 Liquid crystal display matrix including a non-linear device |
| 05/28/1985 | US4520380 Amorphous semiconductors equivalent to crystalline semiconductors |
| 03/26/1985 | US4507672 Method of fabricating a current controlled bistable electrical organic thin film switching device |
| 02/12/1985 | US4499557 Doped amorphous silicon alloy |
| 01/29/1985 | CA1181848A1 Programmable cell for use in programmable electronic arrays |
| 11/13/1984 | USRE31734 Moderate field hole and electron injection from one interface of MIM or MIS structures |
| 09/18/1984 | US4472726 Two carrier dual injector apparatus |
| 09/18/1984 | US4472296 Bulk, polycrystalline switching materials for threshold and/or memory switching |
| 08/29/1984 | EP0117046A2 Electronic matrix arrays and method for making, parallel preprogramming or field programming the same |
| 08/29/1984 | EP0117045A2 Liquid crystal flat panel display |
| 08/14/1984 | CA1172742A1 Multiple cell photoresponsive amorphous alloys and devices |
| 03/06/1984 | CA1188008A2 Thin film transistor |
| 03/06/1984 | CA1163377A2 Thin film transistor |
| 02/21/1984 | US4433342 Amorphous switching device with residual crystallization retardation |
| 02/14/1984 | CA1162327A2 Diode and eeprom device using same |
| 02/07/1984 | CA1161970A2 Diode and rom device using same |
| 12/13/1983 | US4420766 Reversibly programmable polycrystalline silicon memory element |
| 10/11/1983 | US4409605 Amorphous semiconductors equivalent to crystalline semiconductors |
| 10/11/1983 | CA1155239A1 Diode and rom or eeprom device using same |
| 09/06/1983 | CA1153480A1 Thin film transistor |
| 04/06/1983 | EP0075679A2 SIMIM electron devices |
| 02/16/1983 | EP0072221A2 Non-volatile electrically programmable memory device |
| 02/01/1983 | US4371883 Copper or silver with tetracyanonaphtho-quinodimethane or tetracyanoquinodimethane |
| 01/04/1983 | US4366614 Quaternary compound from the group consisting of germanium, tellurium, arsenic and sulfur |
| 11/16/1982 | US4359414 Insulative composition for forming polymeric electric current regulating junctions |
| 07/27/1982 | US4341588 Self-supporting silicon strip, vapor deposition, single crystals, integrated circuits |
| 06/22/1982 | US4336163 Oxide negative resistance element |
| 06/15/1982 | CA1125896A1 Amorphous semiconductors equivalent to crystalline semiconductors |
| 06/02/1982 | EP0053013A2 Non-volatile semiconductor memory device |
| 06/01/1982 | CA1124857A1 Amorphous semiconductor memory device for employment in an electrically alterable read-only memory |
| 05/11/1982 | CA1123525A1 High temperature amorphous semiconductor member and method of making same |
| 04/27/1982 | CA1122687A1 Amorphous semiconductors equivalent to crystalline semiconductors |
| 02/23/1982 | US4317091 Negative semiconductor resistance |
| 01/26/1982 | CA1117222A1 Resistive film stabilization of coplanar amp device |
| 11/24/1981 | CA1113191A1 High breakdown voltage varistor |
| 09/30/1981 | EP0036802A1 Method of manufacturing amorphous semiconductor memory devices |
| 09/02/1981 | EP0034653A1 Dual electron injector structures |
| 06/09/1981 | US4272562 Method of fabricating amorphous memory devices of reduced first fire threshold voltage |
| 06/09/1981 | CA1102925A1 Amorphous semiconductor member and method of making same |
| 03/24/1981 | US4258080 Method of lowering resistivity of metal oxide semiconductor powder |
| 01/21/1981 | EP0022461A1 Negative resistance semiconductor |
| 01/07/1981 | EP0021185A1 Thin-film diodes arrangement |
| 11/04/1980 | CA1089109A1 Metal base transistor with thin film amorphous semiconductors |
| 10/14/1980 | US4228524 Multilevel sequence of erase pulses for amorphous memory devices |
| 10/07/1980 | US4226898 Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
| 09/30/1980 | US4225946 Multilevel erase pulse for amorphous memory devices |
| 09/16/1980 | CA1085965A1 Mox multi-layer switching device |
| 08/12/1980 | US4217374 Amorphous semiconductors equivalent to crystalline semiconductors |
| 07/29/1980 | CA1082809A1 Irreversible semiconductor switching element and semiconductor memory device utilizing the same |
| 04/22/1980 | US4199692 Amorphous non-volatile ram |
| 02/05/1980 | US4187530 Structure for solid state switch |
| 01/01/1980 | US4181913 Resistive electrode amorphous semiconductor negative resistance device |
| 12/25/1979 | US4180866 Single transistor memory cell employing an amorphous semiconductor threshold device |
| 12/04/1979 | US4177475 Graded material of a tellurium-based chacogenide (germanium) |
| 12/04/1979 | US4177474 Boron, carbon, nitrogen, or oxygen and a modifier |
| 12/04/1979 | US4177473 Amorphous semiconductor member and method of making the same |
| 10/30/1979 | USRE30131 Generating and using coherent optical radiation |
| 10/18/1979 | WO1979000776A1 Amorphous semiconductors equivalent to crystalline semiconductors |
| 10/04/1979 | WO1979000724A1 Amorphous semiconductors equivalent to crystalline semiconductors |
| 09/25/1979 | US4168630 Semiconductor pressure converter |
| 09/18/1979 | US4167806 Method of fabrication of an amorphous semiconductor device on a substrate |
| 08/07/1979 | US4163982 Solid state electrical switch employing electrochromic material |
| 07/24/1979 | US4161814 Tunnel injection of minority carriers in semi-conductors |
| 05/01/1979 | US4152658 Resistive film stabilization of coplanar AMP device |
| 04/04/1979 | EP0001374A1 Metal base transistor witht amorphous hin semiconductor films |
| 04/03/1979 | CA1052009A1 Method for fabricating a semiconductor memory device |
| 03/27/1979 | US4146902 Irreversible semiconductor switching element and semiconductor memory device utilizing the same |
| 02/06/1979 | CA1048160A1 Stable non-crystalline material for switching devices |
| 11/28/1978 | US4127861 Metal base transistor with thin film amorphous semiconductors |
| 10/24/1978 | CA1041211A1 Filament-type memory semiconductor device and method of making the same |
| 10/03/1978 | US4118727 MOX multi-layer switching device comprising niobium oxide |
| 09/19/1978 | US4115872 Amorphous semiconductor memory device for employment in an electrically alterable read-only memory |
| 08/01/1978 | US4104675 Moderate field hole and electron injection from one interface of MIM or MIS structures |
| 11/22/1977 | US4059814 Controllable semiconductor element |