Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
04/2014
04/02/2014CN102544354B CuxO resistance type memorizer integrated with copper interconnection back-end structure and preparation method thereof
04/02/2014CN102479923B Manufacturing method of phase change memory
04/02/2014CN102315384B Phase change random access memory and bottom electrode and making method thereof
04/01/2014US8686419 Structure and fabrication method for resistance-change memory cell in 3-D memory
03/2014
03/27/2014WO2014045372A1 Semiconductor recording device
03/27/2014US20140085974 Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact
03/27/2014US20140084237 Defect gradient to boost nonvolatile memory performance
03/27/2014US20140084236 ALD processing techniques for forming non-volatile resistive switching memories
03/27/2014US20140084235 Memory component and memory device
03/27/2014US20140084234 Post manufacturing strain manipulation in semiconductor devices
03/27/2014US20140084233 Electrode structure for a non-volatile memory device and method
03/27/2014US20140084232 Resistive Switching Memory
03/26/2014CN103682096A Resistive random access memory capable of realizing multilevel storage
03/26/2014CN103682095A RRAM (Resistive Random Access Memory) with selection characteristic and preparation method thereof
03/26/2014CN103682094A Phase change memory structure and manufacturing method thereof
03/26/2014CN103682093A Resistance memory cell, resistance memory array and method of forming the same
03/26/2014CN103682092A Resistive memory device and method for manufacturing the same
03/26/2014CN103682091A Resistive random access memory, operating method and manufacturing method therefor
03/26/2014CN103682090A Production method of resistance type memory and resistance type memory
03/26/2014CN103682089A High-speed, high-density and lower power consumption phase-change memory unit and preparation method thereof
03/26/2014CN103682088A Method for manufacturing intersection device
03/26/2014CN103681727A Bi-layer structure resistor type storage and preparation method thereof
03/26/2014CN103680606A Semiconductor stack
03/26/2014CN102637823B Limited electrode structure for low-power-consumption phase change memory and preparation method thereof
03/26/2014CN102637822B High-purity chalcogenide phase change alloy target and preparation method for same
03/26/2014CN102239557B Nonvolatile storage device and method for manufacturing the device
03/26/2014CN102119424B Resistance-change non-volatile memory device
03/26/2014CN101946321B Nonvolatile semiconductor storage device and method for manufacturing the same
03/25/2014US8680502 Amorphous semiconductor layer memory device
03/20/2014WO2014043630A1 Embedded nonvolatile memory elements having resistive switching characteristics
03/20/2014WO2014043109A1 Single-crystal phase change material on insulator for reduced cell variability
03/20/2014WO2014040359A1 Phase-change memory unit and manufacturing method therefor
03/20/2014WO2014040358A1 Tisin material layer-containing phase-change memory unit and manufacturing method therefor
03/20/2014WO2014040357A1 Antimony-rich high-speed phase-change material for use in phase-change memory device, manufacturing method for the material, and application thereof
03/20/2014WO2014040356A1 Phase change memory location for replacing dram and flash and manufacturing method therefor
03/20/2014WO2013192216A3 Memories with cylindrical read/write stacks
03/20/2014US20140080279 Multilevel mixed valence oxide (mvo) memory
03/20/2014US20140080272 Continuous mesh three dimensional non-volatile storage with vertical select devices
03/20/2014US20140077149 Resistance memory cell, resistance memory array and method of forming the same
03/20/2014US20140077148 Rram cell with bottom electrode(s) positioned in a semiconductor substrate
03/20/2014US20140077147 Methods For Selective Etching Of A Multi-Layer Substrate
03/20/2014US20140077145 Semiconductor device and method of manufacturing the same
03/20/2014US20140077144 Nonvolatile memory element and method of manufacturing nonvolatile memory element
03/20/2014US20140077143 Variable Resistance Memory Device and Methods of Forming the Same
03/20/2014US20140077142 Variable resistance memory device and method for fabricating the same
03/19/2014CN103650142A Resistance change element and manufacturing method therefor
03/19/2014CN102386324B Method for manufacturing phase change memory element
03/18/2014US8674336 Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays
03/13/2014WO2014038152A1 Variable resistance element and method for producing same
03/13/2014WO2014036837A1 Resistive random access memory and manufacturing method thereof
03/13/2014US20140073108 Methods for forming resistance random access memory structure
03/13/2014US20140073107 Atomic Layer Deposition of Metal Oxide Materials for Memory Applications
03/13/2014US20140073084 Methods of Forming Phase Change Materials and Methods of Forming Phase Change Memory Circuitry
03/13/2014US20140070163 Phase-change memory cell
03/13/2014US20140070162 Resistance change type memory and manufacturing method thereof
03/13/2014US20140070161 Memory device
03/13/2014US20140070160 Nonvolatile memory device
03/13/2014US20140070159 Novel rram structure at sti with si-based selector
03/13/2014US20140070158 Phase-change memory cell
03/13/2014US20140070157 Nonvolatile semiconductor memory device
03/13/2014US20140070156 Memory device
03/13/2014US20140070155 Single-Crystal Phase Change Material on Insulator for Reduced Cell Variability
03/12/2014EP2706583A1 Phase-change memory cell
03/12/2014EP2706582A1 Phase-change memory cell
03/12/2014EP2706581A1 ReRAM device structure
03/12/2014CN103636128A Method for driving non-volatile semiconductor device
03/12/2014CN103633243A Preparation method of resistor type memory
03/12/2014CN103633242A Resistive random access memory(RRAM) with self-rectification characteristic and preparation method thereof
03/12/2014CN103633241A Memristor memory and manufacturing method thereof
03/12/2014CN103633108A 3-dimensional stack memory device
03/12/2014CN102723435B Method for preparing resistance random access memory device realizing multiple-valued storage performance based on interface oxygen vacancy
03/12/2014CN102569646B Manufacturing method of phase change memory
03/12/2014CN102569644B Sb2Tey-Si3N4 composite phase change material for phase change memory and preparation method thereof
03/12/2014CN102544360B Phase-change memory forming method
03/12/2014CN102543877B Method for manufacturing three-dimensional semiconductor storage device
03/12/2014CN102487120B Formation method of phase change random access memory (PCRAM)
03/12/2014CN102132408B Storage element and storage device
03/12/2014CN101952986B Electronic component, and method of manufacturing electronic component
03/12/2014CN101828236B Nonvolatile semiconductor memory device
03/06/2014WO2014034420A1 Resistance change memory element
03/06/2014US20140065790 Work Function Tailoring for Nonvolatile Memory Applications
03/06/2014US20140065788 Combinatorial Approach for Screening of ALD Film Stacks
03/06/2014US20140063912 Non-volatile memory device
03/06/2014US20140063903 Resistive random access memory, controlling method and manufacturing method therefor
03/06/2014US20140061581 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor
03/06/2014US20140061579 Nonvolatile memory element and nonvolatile memory device
03/06/2014US20140061577 Semiconductor memory device and method of manufacturing the same
03/06/2014US20140061576 Fin-type memory
03/06/2014US20140061575 Three dimensional memory array architecture
03/06/2014US20140061574 Three dimensional memory array architecture
03/06/2014US20140061573 Nonvolatile memory element, nonvolatile memory device, and methods of manufacturing the same
03/06/2014US20140061571 Resistive memory device and method for manufacturing the same
03/06/2014US20140061570 Memory device and method for manufacturing the same
03/06/2014US20140061569 Flexible non-volatile memory
03/06/2014US20140061567 Nonvolatile memory device
03/06/2014US20140061566 Semiconductor storage device and method of manufacturing same
03/06/2014US20140061565 Nonvolatile memory
03/05/2014CN103618046A Memory device made of graphene quantum dot/poly-(3, 4-ethylenedioxy group thiophene)-poly-(styrenesulfonic acid) materials and preparation method
03/05/2014CN103618045A Preparation method of low-power dissipation phase change memory structure
03/04/2014US8664631 Nonvolatile memory device
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