Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
05/2014
05/14/2014CN101577309B 应用于电阻式随机存取存储器的电脉冲电压操作方法 An electrical pulse voltage operation method is applied to a resistive random access memory
05/14/2014CN101257084B 相变化存储器及其制造方法 The method of manufacturing a phase change memory and its
05/13/2014US8723156 Resistive switching memory elements having improved switching characteristics
05/08/2014US20140127876 Pillar structure for memory device and method
05/08/2014US20140126269 Resistive memory
05/08/2014US20140124729 3-dimensional (3d) non-volatile memory device and method of fabricating the same
05/08/2014US20140124728 Resistive memory device, resistive memory array, and method of manufacturing resistive memory device
05/08/2014US20140124727 Nonvolatile memory devices and methods of forming the same
05/08/2014US20140124726 Phase-change memory devices and methods of fabricating the same
05/08/2014US20140124725 Resistive Random Access Memory Cells Having Doped Current Limiting layers
05/07/2014CN103779497A 基于埋层的垂直结构存储器的制备方法 Preparation of the vertical structure of the memory-based buried layer
05/07/2014CN103779496A 相变存储单元的制作方法 Method of manufacturing a phase change memory cell
05/07/2014CN102610753B 一种含石墨烯电极材料的相变存储器的制备方法 Method for preparing graphene electrode material containing phase change memory
05/06/2014US8716691 Nonvolatile memory device and method for manufacturing the same
05/06/2014US8716688 Electronic device incorporating memristor made from metallic nanowire
05/01/2014US20140120686 Methods Of Forming A Nonvolatile Memory Cell And Methods Of Forming An Array Of Nonvolatile Memory Cells
05/01/2014US20140120685 Phase-change memory device and method for fabricating the same
05/01/2014US20140119110 Phase change memory coding
05/01/2014US20140117305 Non-volatile memory element and manufacturing method thereof
05/01/2014US20140117304 Variable resistance memory device
05/01/2014US20140117303 Resistive Random Access Memory Cells Having METAL ALLOY Current Limiting layers
05/01/2014US20140117302 Phase Change Memory Cells, Methods Of Forming Phase Change Memory Cells, And Methods Of Forming Heater Material For Phase Change Memory Cells
05/01/2014US20140117301 Wrap around phase change memory
05/01/2014US20140117300 Memory elements using self-aligned phase change material layers and methods of manufacturing same
05/01/2014US20140117299 Memory Cells, Memory Cell Arrays, Methods of Using and Methods of Making
05/01/2014US20140117298 Complementary metal oxide heterojunction memory devices and methods related thereto
04/2014
04/30/2014CN103762309A Environment-friendly Zn-Sb phase change storage thin-film material and manufacturing method thereof
04/30/2014CN103762308A Polymorphic gallium antimony-tin selenide multilayer nano-composite phase change material and preparation and application thereof
04/30/2014CN102231424B Phase change memory cell and phase change memory
04/30/2014CN102077348B Nonvolatile memory element and semiconductor memory device provided with same
04/29/2014US8711602 Semiconductor memory device
04/29/2014US8710580 Semiconductor device and method of manufacturing the same
04/29/2014US8710483 Memristive junction with intrinsic rectifier
04/29/2014US8710480 Phase-change memory device having multiple diodes
04/24/2014WO2014061091A1 Semiconductor storage device
04/24/2014US20140113430 Method of manufacturing semiconductor memory device
04/24/2014US20140113429 Variable resistance memory devices and methods of manufacturing the same
04/24/2014US20140113428 Method for Integrating MnOz Based Resistive Memory with Copper Interconnection Back-End Process
04/24/2014US20140113427 Phase-change random access memory device and method of manufacturing the same
04/24/2014US20140112059 High-reliability high-speed memristor
04/24/2014US20140110660 Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
04/24/2014US20140110659 Nonvolatile memory device and method of manufacturing the same
04/24/2014US20140110658 Memory constructions comprising thin films of phase change material
04/24/2014US20140110657 Memory constructions
04/24/2014US20140110656 Phase Change Memory with Various Grain Sizes
04/23/2014EP2722903A1 Strongly correlated oxide field effect element
04/23/2014CN103746073A Diamond type quad-resistor cells of pram
04/22/2014US8705265 Ionic devices containing a membrane between layers
04/17/2014WO2014058858A1 Resistive memory device fabricated from single polymer material
04/17/2014WO2014057734A1 Method for forming wiring
04/17/2014US20140106549 Low temperature gst process
04/17/2014US20140106535 Methods of manufacturing semiconductor devices
04/17/2014US20140106534 Methods Of Forming A Programmable Region That Comprises A Multivalent Metal Oxide Portion And An Oxygen Containing Dielectric Portion
04/17/2014US20140106533 Memory cells and methods of forming memory cells
04/17/2014US20140104939 Phase Change Memory With Threshold Switch Select Device
04/17/2014US20140104932 Memory Cells, Non-Volatile Memory Arrays, Methods Of Operating Memory Cells, Methods Of Writing To And Writing From A Memory Cell, And Methods Of Programming A Memory Cell
04/17/2014US20140103288 Memory arrays and associated methods of manufacturing
04/17/2014US20140103287 Semiconductor storage device and method for manufacturing same
04/17/2014US20140103286 Integrated circuit tamper detection and response
04/17/2014US20140103285 Integrated Circuitry, Methods of Forming Memory Cells, and Methods of Patterning Platinum-Containing Material
04/17/2014US20140103284 ReRAM Cells Including TaXSiYN Embedded Resistors
04/17/2014US20140103283 Variable resistance memory device and method of fabricating the same
04/17/2014US20140103282 Diffusion Barrier Layer for Resistive Random Access Memory Cells
04/17/2014US20140103281 Resistive Memory Based on TaOx Containing Ru Doping and Method of Preparing the Same
04/17/2014US20140103280 Nonvolatile resistive memory element with a passivated switching layer
04/17/2014US20140102879 Method of manufacturing variable resistance element and apparatus for manufacturing the same
04/16/2014CN103730573A Photoelectric functional structure unit and production method and application thereof
04/16/2014CN103730572A Complementary type resistance random access memory and manufacturing method thereof
04/16/2014CN103730571A Method and apparatus for forming contact in cell of resistive random access memory to reduce voltage required to program the cell
04/16/2014CN102683587B Silicon-tin selenide nano multilayer composite phase change thin film material for phase change memory
04/16/2014CN102544049B Three-dimensional semiconductor storage device and preparation method for three-dimensional semiconductor storage device
04/16/2014CN101960594B Nonvolatile memory device and its manufacturing method
04/16/2014CN101789489B Phase change memory cell and method of formation
04/15/2014US8697487 Memory device manufacturing method with memory element having a metal-oxygen compound
04/10/2014US20140098595 Non-volatile memory device
04/10/2014US20140097400 Vertical transistor with hardening implantation
04/10/2014US20140097399 Phase change memory structures and methods
04/10/2014US20140097398 Memristive devices and memristors with ribbon-like junctions and methods for fabricating the same
04/10/2014US20140097397 Resistive memory device and memory apparatus and data processing system having the same
04/10/2014US20140097396 Non-volatile memory device and manufacturing method thereof
04/10/2014US20140097395 Resistive memory device fabricated from single polymer material
04/09/2014CN103715354A Resistive memory device and memory apparatus and data processing system having the same
04/09/2014CN103715353A Resistance variable memory structure and method of forming the same
04/09/2014CN103715352A Resistance variable memory structure and method of forming the same
04/09/2014CN103715216A Resistive random access memory and fabrication method thereof
04/09/2014CN102683583B Unipolar resistive random access memory and manufacturing method thereof
04/09/2014CN101055917B Resistive memory element, operating method thereof, and data processing system using memory element
04/03/2014WO2014050198A1 Switching element and method for manufacturing same
04/03/2014WO2014047974A1 Resistive random access memory and preparation method thereof
04/03/2014US20140092669 Non-volatile variable resistive element, controlling device and storage device
04/03/2014US20140092668 Resistive switching devices and memory devices including the same
04/03/2014US20140092666 Low voltage embedded memory having conductive oxide and electrode stacks
04/03/2014US20140091274 Memory devices having unit cell as single device and methods of manufacturing the same
04/03/2014US20140091273 Resistive random access memory and fabrication method thereof
04/03/2014US20140091272 Resistance variable memory structure and method of forming the same
04/03/2014US20140091271 Resistance variable memory structure and method of forming the same
04/03/2014US20140091270 Low energy memristors with engineered switching channel materials
04/02/2014CN103700765A Manufacturing method and semiconductor device
04/02/2014CN102683584B Metal oxide resistance memory integrating a standard complementary metal oxide semiconductor (CMOS) process and preparation method thereof
04/02/2014CN102637821B Phase change memory unit and forming method thereof
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