Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
06/2014
06/11/2014CN102832343B Multi-resistance-state memristor
06/05/2014WO2014084006A1 Semiconductor device
06/05/2014US20140154862 Uniform critical dimension size pore for pcram application
06/05/2014US20140154861 Semiconductor Constructions, Memory Arrays, Methods of Forming Semiconductor Constructions and Methods of Forming Memory Arrays
06/05/2014US20140154860 Memory Cells, Methods of Forming Memory Cells, and Methods of Programming Memory Cells
06/05/2014US20140151629 Confined resistance variable memory cells and methods
06/05/2014US20140151628 Phase change memories and fabrication method
06/05/2014US20140151627 Semiconductor device and method of manufacturing the same
06/05/2014US20140151626 Selector Device Using Low Leakage Dielectric Mimcap Diode
06/05/2014US20140151625 Nonvolatile memory device using a varistor as a current limiter element
06/05/2014US20140151624 Target, method for producing the same, memory, and method for producing the same
06/05/2014US20140151623 Resistive random access memory devices formed on fiber and methods of manufacturing the same
06/05/2014US20140151622 Phase change memory
06/05/2014US20140151621 Method of forming anneal-resistant embedded resistor for non-volatile memory application
06/04/2014CN103840081A Non-volatilization resistance transformation type memorizer based on yttrium iron garnet and manufacturing method thereof
06/04/2014CN103840080A Voltage control storage based on one-dimensional cadmium doping zinc oxide nanowire and preparing method of voltage control storage
06/04/2014CN103840079A Phase change memory, bottom contact structure thereof, method for manufacturing phase change memory and method for manufacturing bottom contact structure of phase change memory
06/04/2014CN103840078A Method for manufacturing phase change memory
06/04/2014CN103840077A Methods for manufacturing phase change memory
06/04/2014CN103839958A Memorizer device, integrated circuit and manufacturing method of memorizer device
06/04/2014CN102646790B Non-volatile memory
06/04/2014CN102637820B Phase change random access memory forming method
06/04/2014CN102468435B Manufacturing method of phase change memory
06/04/2014CN102468431B Realization method for eliminating lower electrode damage of phase change random access memory (PCRAM)
06/04/2014CN102308017B Method of forming memory cell using gas cluster ion beams
06/04/2014CN102084512B Switching element
06/04/2014CN102064276B Asymmetric phase-change memory unit and element
06/03/2014US8742392 Bipolar multistate nonvolatile memory
06/03/2014US8742388 Variable resistance memory devices
06/03/2014US8742387 Resistive memory devices with improved resistive changing elements
05/2014
05/30/2014WO2014080616A1 Nonvolatile semiconductor storage device
05/29/2014US20140147965 Heating phase change material
05/29/2014US20140147942 Memory device and method for manufacturing the same
05/29/2014US20140146594 Designing method of non-volatile memory device, manufacturing method of non-volatile memory device, and non-volatile memory device
05/29/2014US20140146593 Method And Structure For Resistive Switching Random Access Memory With High Reliable And High Density
05/29/2014US20140146592 Low voltage embedded memory having cationic-based conductive oxide element
05/29/2014US20140145142 Memristor structure with a dopant source
05/29/2014US20140145141 Electronic memory device
05/29/2014US20140145140 Variable resistance memory device
05/29/2014US20140145139 Transparent flexible resistive memory and fabrication method thereof
05/29/2014US20140145138 Resistive random access memory devices, and related semiconductor device structures
05/29/2014US20140145137 Resistive Random Access Memory Devices Having Variable Resistance Layers
05/29/2014US20140145136 Non-volatile memory device and manufacturing method thereof
05/29/2014US20140145135 Sub-oxide interface layer for two-terminal memory
05/28/2014EP2736088A1 Electronic device such as a memory
05/28/2014CN103824938A 一种阻变存储器结构及其制备方法 A memory structure and preparation method resistive
05/28/2014CN103824937A 一种高速纳米两端非易失性存储器及其制备方法 A nanometer both ends of the high-speed non-volatile memory and its preparation method
05/28/2014CN102341930B 具有分层固体电解质结构的可编程金属化存储器单元 A memory unit having a programmable metallization layered structure of solid electrolyte
05/28/2014CN101661992B 相变存储单元器件的复合电极结构 Phase change storage unit composite electrode structure components
05/27/2014US8735293 Chemical mechanical polishing composition and methods relating thereto
05/27/2014US8735215 Method of manufacturing variable resistance memory device
05/22/2014WO2014076869A1 Non-volatile memory element and method for manufacturing same
05/22/2014WO2014076509A2 A storage cell of non-volatile memory
05/22/2014US20140141590 Gcib-treated resistive device
05/22/2014US20140138608 Memory cell structures
05/22/2014US20140138607 Non-volatile memory device and manufacturing method thereof
05/22/2014US20140138606 Resistance variable memory device
05/22/2014US20140138605 Compact localized rram cell structure realized by spacer technology
05/22/2014US20140138604 Methods for forming narrow vertical pillars and integrated circuit devices having the same
05/22/2014US20140138603 Compact rram structure with contact-less unit cell
05/22/2014US20140138602 Controlled Localized Defect Paths for Resistive Memories
05/22/2014US20140138601 Nanocomposite material, tunable resistor device, and method
05/22/2014US20140138600 Memory device having stitched arrays of 4 f² memory cells
05/22/2014US20140138599 Nonvolatile memory element and method for manufacturing the same
05/22/2014US20140138598 Nonvolatile memory device
05/22/2014US20140138597 Non-volatile semiconductor memory device
05/21/2014CN103811656A 可变电阻存储结构及其形成方法 Variable resistive memory structure and method of forming
05/21/2014CN103811655A 非易失性存储器 Non-volatile memory
05/21/2014CN103811516A 具有不对称垂直选择器件的三维非易失性存储器 Select the device with asymmetric vertical three-dimensional non-volatile memory
05/21/2014CN103811515A 逻辑兼容的rram结构和工艺 Logic compatible rram structure and process
05/21/2014CN103811514A 逻辑兼容rram结构和工艺 Structure and process logic compatible rram
05/21/2014CN102117883B 一种降低相变存储器单元操作功耗的方法 A method of operating a phase change memory cell to reduce the power consumption
05/20/2014US8730720 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
05/20/2014US8729521 Self aligned fin-type programmable memory cell
05/20/2014US8729520 Memory devices and formation methods
05/20/2014US8729517 Nonvolatile semiconductor memory device and method for manufacturing nonvolatile semiconductor memory device
05/20/2014US8728859 Small footprint phase change memory cell
05/15/2014WO2014020478A3 Resistive switching element and use thereof
05/15/2014WO2013109954A3 Nonvolatile memory device using a tunnel oxide as a passive current steering element
05/15/2014US20140134794 Nonvolatile Memory Device Having An Electrode Interface Coupling Region
05/15/2014US20140133222 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds
05/15/2014US20140133210 Variable resistive element, storage device and driving method thereof
05/15/2014US20140131655 Semiconductor memory devices and methods of fabricating the same
05/15/2014US20140131654 Logic compatible rram structure and process
05/15/2014US20140131653 Unipolar programmable metallization cell
05/15/2014US20140131652 Magnetoresistive tunnel junction
05/15/2014US20140131651 Logic compatible rram structure and process
05/15/2014US20140131650 Resistance variable memory structure
05/14/2014EP2729934A1 Oxide memory resistor including semiconductor nanoparticles
05/14/2014CN103794723A 一种相变存储器单元及其制备方法 Memory cell and method for preparing a phase change
05/14/2014CN103794722A 新型相变存储单元结构及其制备方法 The new phase-change memory cell structure and preparation method
05/14/2014CN103794721A 一种相变存储单元及其制备方法 A phase change memory cell and its preparation method
05/14/2014CN103794720A 具有双栅极垂直选择器件的三维非易失性存储器 Has a double gate vertical selection of three-dimensional non-volatile memory device
05/14/2014CN103794719A 一种平面相变存储器存储单元的结构及其制备方法 Structure and a method for preparing a memory cell of a planar phase change
05/14/2014CN103794718A 阻变存储器中钨氧化物变阻材料的制备方法 Tungsten oxide resistive switching memory varistor material preparation methods
05/14/2014CN103794621A 一种双向限流器件及其制备方法 A bi-limiting device and its preparation method
05/14/2014CN103794619A 可变电阻存储器件 A variable resistance memory element
05/14/2014CN103794618A 双极阻变存储器件 Bipolar resistive switching memory device
05/14/2014CN103794224A 一种基于相变磁性材料的非易失性逻辑器件及逻辑操作方法 A non-volatile logic device and the logical operation method of a magnetic material based on a phase change
05/14/2014CN102694120B 一种相变随机存储器及其制造方法 A phase-change random access memory device and a method of manufacturing
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