Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
07/2014
07/02/2014CN103898452A 一种相变存储用Sb-Te-W相变靶材及其制备方法 A phase change memory using Sb-Te-W phase change target and preparation method
07/02/2014CN102623638B 一种阻变存储器及其制备方法 A resistive switching memory and its preparation method
07/02/2014CN102610747B 提高非易失性电阻转变存储器均一性的方法 A method to improve the homogeneity of the resistive switching nonvolatile memory
07/02/2014CN102593350B 相变存储单元及其制作方法 Phase change memory cell and its manufacturing method
07/02/2014CN102428560B 非易失性存储元件、其制造方法、其设计辅助方法及非易失性存储装置 A nonvolatile memory element, its manufacturing method, the design method and the auxiliary non-volatile memory device
07/02/2014CN102138233B 相变记忆材料 The phase change memory material
07/01/2014US8767447 Drift-insensitive or invariant material for phase change memory
07/01/2014US8767441 Switching device having a non-linear element
07/01/2014US8767438 Memelectronic device
07/01/2014US8766344 Vertical mosfet transistor, in particular operating as a selector in nonvolatile memory devices
07/01/2014US8766234 Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
07/01/2014US8766232 Semiconductor memory devices having variable resistor and methods of fabricating the same
07/01/2014US8766231 Nanoscale electronic device with barrier layers
07/01/2014US8766230 Non-volatile multi-bit memory with programmable capacitance
07/01/2014US8766224 Electrically actuated switch
07/01/2014US8765564 Methods of forming variable resistive memory devices
06/2014
06/26/2014WO2014100749A2 A multi-level memory array having resistive elements for multi-bit data storage
06/26/2014WO2014094417A1 Resistive random access memory and preparation method thereof
06/26/2014WO2014094334A1 Memristor based on aginsbte chalcogenide compounds, and preparation method therefor
06/26/2014US20140177330 Vertical bjt for high density memory
06/26/2014US20140177315 Multi-Level Memory Array Having Resistive Elements For Multi-Bit Data Storage
06/26/2014US20140175371 Vertical cross-point embedded memory architecture for metal-conductive oxide-metal (mcom) memory elements
06/26/2014US20140175370 Phase-change memory
06/26/2014US20140175369 Manufacturing method of nonvolatile memory device and nonvolatile memory device
06/26/2014US20140175368 Phase-change random access memory device and method of manufacturing the same
06/26/2014US20140175367 Materials for Thin Resisive Switching Layers of Re-RAM Cells
06/26/2014US20140175366 Resistance variable memory structure and method of forming the same
06/26/2014US20140175365 Resistive random access memory (rram) structure and method of making the rram structure
06/26/2014US20140175364 Radiation enhanced resistive switching layers
06/26/2014US20140175363 Forming Nonvolatile Memory Elements By Diffusing Oxygen Into Electrodes
06/26/2014US20140175362 Limited Maximum Fields of Electrode-Switching Layer Interfaces in Re-RAM Cells
06/26/2014US20140175361 Resistive Switching Layers Including Hf-Al-O
06/26/2014US20140175360 Bilayered Oxide Structures for ReRAM Cells
06/26/2014US20140175359 Diffusion Barrier Layer for Resistive Random Access Memory Cells
06/26/2014US20140175358 Phase-change random access memory device and method of manufacturing the same
06/26/2014US20140175357 Morphology control of ultra-thin MeOx layer
06/26/2014US20140175356 Resistive Random Access Memory Access Cells Having Thermally Isolating Structures
06/26/2014US20140175355 Carbon Doped Resistive Switching Layers
06/26/2014US20140175354 Sequential atomic layer deposition of electrodes and resistive switching components
06/25/2014CN103887430A 掺氮改性的相变薄膜材料及其制备方法 Modified nitrogen-doped phase-change film material and method
06/25/2014CN103887429A 一种磁场可控的硅基非易失性阻变器件及制备方法 One kind of magnetic field controllable silicon nonvolatile resistive switching device and its preparation method
06/25/2014CN103882404A 形成相变材料的方法和形成相变存储器电路的方法 The method for forming the phase change material and a method of forming a phase change memory circuit
06/25/2014CN102509732B 微控制器用低功耗嵌入式相变存储器及其相变存储材料与制备方法 Microcontroller with low-power embedded phase-change memory and phase-change memory material and preparation method
06/25/2014CN102456831B 相变随机存取存储器的存储单元 A storage unit in a phase change random access memory
06/25/2014CN102446547B 交点自对准的可编程存储装置 Programmable memory means the intersection of self-alignment
06/25/2014CN102403456B 一种制作相变存储器元件的方法 A method of making a phase change memory element
06/25/2014CN102326253B 电阻记忆元件及其使用方法 Resistance memory element and method of use
06/24/2014US8759808 Phase-change memory cell
06/24/2014US8759143 Semiconductor constructions, memory arrays, methods of forming semiconductor constructions and methods of forming memory arrays
06/19/2014WO2013073993A8 Memristor based on a mixed metal oxide
06/19/2014US20140170832 Resistive random access memory and method for controlling manufacturing of corresponding sub-resolution features of conductive and resistive elements
06/19/2014US20140170831 Phase change memory cell with large electrode contact area
06/19/2014US20140170830 Variable resistance memory device and method for fabricating the same
06/19/2014US20140169070 Heterojunction oxide non-volatile memory devices
06/19/2014US20140169067 Resistance memory device and memory apparatus and data processing system
06/19/2014US20140167042 Memristors having mixed oxide phases
06/19/2014US20140166972 Methods of self-aligned growth of chalcogenide memory access device
06/19/2014US20140166970 Phase change memory cell
06/19/2014US20140166969 Nonvolatile memory device using a tunnel oxide as a passive current steering element
06/19/2014US20140166967 Small footprint phase change memory cell
06/19/2014US20140166966 Resistance Change Element and Method for Producing the Same
06/19/2014US20140166965 Resistive memory device and fabrication method thereof
06/19/2014US20140166964 Phase-change memory device and fabrication method thereof
06/19/2014US20140166963 Semiconductor device and method of manufacturing the same
06/19/2014US20140166962 Phase change memory cell with large electrode contact area
06/19/2014US20140166961 Resistive random access memory (rram) and method of making
06/19/2014US20140166960 IL-Free MIM stack for clean RRAM Devices
06/19/2014US20140166959 Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and mosfet select devices for memory and logic applications
06/19/2014US20140166958 Controlling ReRam Forming Voltage with Doping
06/19/2014US20140166956 Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer
06/18/2014CN103872246A Resistive random acess memory and method for controlling manufacturing of corresponding sub-resolution features of conductive and resistive elements
06/18/2014CN103872245A Self-rectifying rram storage cell structure and 3d crossbar array architecture thereof
06/18/2014CN103872244A Resistive memory device and fabrication method thereof
06/18/2014CN103872067A Variable resistance memory device and method of manufacturing the same
06/18/2014CN102460757B Electrochromic thin film transistors with lateral or vertical structure using functionalized or non-functionalized substrates and method of manufacturing same
06/18/2014CN101771131B Method for fabricating resistive memory device
06/17/2014US8754394 Variable resistive memory device and method for fabricating the same
06/12/2014WO2014087784A1 Memory element and memory device
06/12/2014US20140162429 Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same
06/12/2014US20140162428 Method for fabricating phase change memory
06/12/2014US20140162401 Ge-Sb-Te FILM FORMING METHOD, Ge-Te FILM FORMING METHOD, AND Sb-Te FILM FORMING METHOD
06/12/2014US20140160837 Resistive memory device and method of manufacturing the same
06/12/2014US20140158975 Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same
06/12/2014US20140158974 Resistance-switching memory cells adapted for use at low voltage
06/12/2014US20140158973 Nitride-based memristors
06/12/2014US20140158972 Memory Cells and Methods of Forming Memory Cells
06/12/2014US20140158971 Phase change memory cells with surfactant layers
06/12/2014US20140158969 Method and apparatus providing multi-planed array memory device
06/12/2014US20140158968 Noble metal / non-noble metal electrode for rram applications
06/12/2014US20140158967 Self-rectifying rram cell structure and 3d crossbar array architecture thereof
06/12/2014US20140158966 Variable resistance memory device and method for fabricating the same
06/12/2014US20140158965 Memory Cells and Methods of Forming Memory Cells
06/12/2014US20140158964 Semiconductor Devices Having Blocking Layers and Methods of Forming the Same
06/11/2014CN203644823U 一种可实现多位存储的rram存储单元结构 Which can realize multi-bit memory cell structure stored rram
06/11/2014CN103855304A Variable resistance memory device
06/11/2014CN103855303A Method And Structure For Resistive Switching Random Access Memory With High Reliability And High Density
06/11/2014CN103855302A Al-Sb-Se material used for phase change memory and preparation method
06/11/2014CN103855301A Multi-stage resistance conversion storage unit and storage device
06/11/2014CN103855300A Phase change storage and forming method thereof
06/11/2014CN103855181A Resistive random access memory devices having variable resistance layers and methods of fabricating same
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 ... 85