Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
08/2014
08/07/2014US20140217354 Large array of upward pointing p-i-n diodes having large and uniform current
08/07/2014US20140217353 Stackable non-volatile resistive switching memory device and method
08/07/2014US20140217352 Memory Cells, Methods of Forming Memory Cells and Methods of Forming Memory Arrays
08/07/2014US20140217351 Memory Cells and Methods of Forming Memory Cells
08/07/2014US20140217350 Arrays Of Memory Cells And Methods Of Forming An Array Of Memory Cells
08/07/2014US20140217349 Methods of Forming Memory and Methods of Forming Vertically-Stacked Structures
08/07/2014US20140217348 Transition Metal Oxide Bilayers
08/06/2014CN203760518U 半导体器件 Semiconductor devices
08/06/2014CN103972386A 一种制备高存储密度多值纳米晶存储器的方法 A high storage density multi-value method for preparing nanocrystalline memory
08/06/2014CN103972385A 一种嵌入式相变化存储器及其制造方法 A memory and manufacturing method thereof embedded phase change
08/06/2014CN103972384A 相变化存储器材料转换区域制造方法及相变化存储器 Phase change memory material and manufacturing method of the conversion region of phase change memory
08/06/2014CN103972383A 二极管选择元件阵列结构的相变化存储器及制造方法 Diode selection phase change memory element array and method of manufacturing the structure
08/05/2014US8796795 MRAM with sidewall protection and method of fabrication
08/05/2014US8796660 Nonvolatile memory element comprising a resistance variable element and a diode
08/05/2014US8796658 Filamentary based non-volatile resistive memory device and method
07/2014
07/31/2014US20140213032 Process For Forming Resistive Switching Memory Cells Using Nano-Particles
07/31/2014US20140209853 Semiconductor memory device
07/31/2014US20140209852 Semiconductor Device Including a Phase Change Material
07/31/2014US20140209851 Memory Cell Constructions, and Methods for Fabricating Memory Cell Constructions
07/31/2014US20140209850 Strongly correlated nonvolatile memory element
07/31/2014US20140209849 Non-volatile memory device and method of manufacturing the same
07/31/2014US20140209848 Memory Constructions
07/31/2014US20140209846 Non-volatile memory device and method of manufacturing the same
07/30/2014CN103956428A 一种降低阻变存储器电铸电压的方法 A method for reducing memory electroforming method resistive voltage
07/30/2014CN102487121B 相变存储器阵列、相变存储器单元及其形成方法 Phase change memory arrays, the phase change memory cell and method of forming
07/30/2014CN102446806B 相变存储器沟槽隔离结构的制作方法 The method of making a trench isolation structure in a memory phase transition
07/30/2014CN102332305B 非易失性可重编程存储器件 Reprogrammable non-volatile memory device
07/30/2014CN102217067B 非易失性存储装置及其制造方法 Non-volatile memory device and manufacturing method thereof
07/29/2014US8792278 Non-volatile memory semiconductor storage including contact plug
07/29/2014US8791552 Semiconductor memory device and method for manufacturing the same
07/29/2014US8791448 Semiconductor memory devices having strapping contacts
07/29/2014US8791445 Interfacial oxide used as switching layer in a nonvolatile resistive memory element
07/24/2014US20140206171 Memory Cells, Integrated Devices, and Methods of Forming Memory Cells
07/24/2014US20140203864 Electrically Actuated Switch
07/24/2014US20140203237 Self-rectified device, method for manufacturing the same, and applications of the same
07/24/2014US20140203236 One transistor and one resistive random access memory (rram) structure with spacer
07/24/2014US20140203234 Variable resistance nonvolatile memory element and method of manufacturing the same
07/23/2014CN103943776A 叠层电容型阻变存储单元结构及其操作方法 Stacked capacitive resistive memory cell structure and methods of operating
07/23/2014CN103943775A 电阻式存储元件 Resistive memory element
07/23/2014CN102694119B 用于制造相变随机存储器的方法 The method of manufacturing a phase change random access memory for
07/23/2014CN102667947B 电阻变化型非易失性存储元件的形成方法 The method of forming a resistance variable nonvolatile memory element
07/23/2014CN102487124B 纳米多层膜、场效应管、传感器、随机存储器及制备方法 Nanomultilayers, FET, sensors, random access memory and preparation methods
07/23/2014CN102473457B 非易失性存储装置以及其驱动方法 Non-volatile memory device and a driving method thereof
07/22/2014US8787071 Nonvolatile storage device and method for writing into the same
07/22/2014US8786101 Contact structure in a memory device
07/22/2014US8785902 Resistive memory device and method for fabricating the same
07/22/2014US8785901 Semiconductor devices having metal oxide patterns
07/22/2014US8785900 Resistive memory and methods of processing resistive memory
07/22/2014US8785899 Nonvolatile stacked memory structure with a resistance change film between a vertical electrode and horizontal electrodes
07/17/2014US20140199821 Variable-resistance material memories and methods
07/17/2014US20140199820 Methods of forming a pattern and methods of manufacturing a semiconductor device using the same
07/17/2014US20140198565 Method, system and device for phase change memory with shunt
07/17/2014US20140197369 Nanoparticle-based memristor structure
07/17/2014US20140197368 Nonvolatile memory element, nonvolatile memory device, nonvolatile memory element manufacturing method, and nonvolatile memory device manufacturing method
07/16/2014EP2754154A1 Methods for producing and preprogramming a non-volatile resistive phase-change memory
07/16/2014CN203721775U 一种相变存储单元 A phase change memory cell
07/16/2014CN103928610A 浮栅型阻变存储单元结构及其操作方法 Resistive-type floating gate memory cell structure and methods of operating
07/16/2014CN103928609A 三维相变化存储器装置及其制造方法 Three phase change memory device and manufacturing method thereof
07/16/2014CN102738391B 一种可调控介质层磁性的阻变存储器 One kind of adjustable resistive dielectric layer magnetic memory
07/15/2014US8780606 Memristive device having a porous dopant diffusion element
07/15/2014US8779474 Electric device comprising phase change material
07/15/2014US8779406 Nonvolatile memory element and method for manufacturing the same
07/15/2014US8778513 Perovskite manganese oxide thin film
07/10/2014US20140192589 Reduced diffusion in metal electrode for two-terminal memory
07/10/2014US20140192586 Resistive Random Access Memory Cells Having Variable Switching Characteristics
07/10/2014US20140192585 Resistive Random Access Memory Cell Having Three or More Resistive States
07/10/2014US20140191184 Nonvolatile variable resistance device and method of manufacturing the nonvolatile variable resistance element
07/10/2014US20140191183 Resistive random access memory
07/10/2014US20140191182 Memory Cells
07/10/2014US20140191181 Method to make rf-pcm switches and circuits with phase-change materials
07/10/2014US20140191180 Low temperature p+ polycrystalline silicon material for non-volatile memory device
07/10/2014US20140191179 Vertical bipolar transistor
07/09/2014CN103915566A 基于相变量子点的存储器件及其制备方法 A memory device and a preparation method based on quantum dots with variable
07/09/2014CN103915565A 一种多级阻变存储器单元及其制备方法 A multi-stage resistive memory cell and its preparation method
07/09/2014CN103915564A 可变电阻存储器件 The variable resistance memory element
07/09/2014CN103915464A 基于透明rram栅控薄膜晶体管的1t1r阵列及其制备方法 1t1r array and its preparation method based transparent thin film transistor gated rram
07/09/2014CN102522374B 一种具有柱状底电极相变化存储装置及其制造方法 A bottom electrode having a columnar phase change memory device and manufacturing method thereof
07/09/2014CN102449763B 非易失性存储元件以及其制造方法 Non-volatile storage element and a manufacturing method thereof
07/08/2014US8772838 Semiconductor layout structure
07/08/2014US8772751 Variable resistance semiconductor memory device
07/08/2014US8772749 Bottom electrodes for use with metal oxide resistivity switching layers
07/03/2014WO2014103691A1 Storage element and storage device
07/03/2014WO2014103577A1 Storage apparatus and method for manufacturing same
07/03/2014WO2014101773A1 Method for forming resistive random access memory cell
07/03/2014WO2014101344A1 Second-order memristor having multi-resistance-state property and modulation method thereof
07/03/2014US20140185358 Resistive random access memory with non-linear current-voltage relationship
07/03/2014US20140185357 Barrier Design for Steering Elements
07/03/2014US20140183438 Memory component, memory device, and method of operating memory device
07/03/2014US20140183437 Memory element and memory device
07/03/2014US20140183436 Nonvolatile Memory Device Having a Current Limiting Element
07/03/2014US20140183435 Semiconductor device having diode and method of forming the same
07/03/2014US20140183433 Semiconductor memory device
07/03/2014US20140183432 MoOx-Based Resistance Switching Materials
07/02/2014CN103907187A 电阻转变元件及其制作方法 Resistance change element and manufacturing method thereof
07/02/2014CN103904216A 一种钛掺杂氧化镍电阻存储器薄膜的制备方法 A method for preparing a thin film of nickel oxide resistive memory titanium-doped
07/02/2014CN103904215A 相变存储器单元的制备方法、相变材料及相变存储器单元 Preparation of phase change memory cells, the phase change material and phase change memory cells
07/02/2014CN103904214A 一种二维相变存储器单元结构及其制造方法 A memory cell structure and method of manufacturing the two-dimensional phase transitions
07/02/2014CN103904213A 相变随机存取存储器件及其制造方法 Phase change random access memory device and manufacturing method thereof
07/02/2014CN103904212A 非挥发性存储器 Non-volatile memory
07/02/2014CN103898474A 钨-锑-碲相变材料沉积方法及相变存储单元制备方法 Tungsten - antimony - tellurium phase change material deposition process and phase change memory cell preparation
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