Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
09/2014
09/18/2014US20140264222 Resistive Switching Random Access Memory with Asymmetric Source and Drain
09/17/2014EP2779260A2 Low temperature in-situ doped silicon-based conductor material for memory cell
09/16/2014US8837292 Relayed CSPF computation for multiple areas and multiple autonomous systems
09/16/2014US8835897 Nonvolatile memory device having variable resistance memory cells
09/16/2014US8835895 Memory device and fabrication process thereof
09/16/2014US8835893 Resistive memory cell fabrication methods and devices
09/16/2014US8835892 Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
09/16/2014US8835891 Integrated circuitry, methods of forming memory cells, and methods of patterning platinum-containing material
09/16/2014US8835890 ReRAM cells including TaXSiYN embedded resistors
09/16/2014US8835889 Parallel shunt paths in thermally assisted magnetic memory cells
09/16/2014US8835272 Passive electrically switchable circuit element having improved tunability and method for its manufacture
09/16/2014US8835241 Method of manufacturing a semiconductor memory device
09/16/2014US8834968 Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
09/12/2014WO2014137943A2 Programmable impedance memory elements and corresponding methods
09/12/2014WO2014137485A1 Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof
09/11/2014US20140258626 Electronic devices having semiconductor memory unit
09/11/2014US20140256111 Nonvolatile Memory Elements
09/11/2014US20140256110 Self aligned fin-type programmable memory cell
09/11/2014US20140254243 Electronic device and method for fabricating the same
09/11/2014US20140254231 3D Non-Volatile Memory Having Low-Current Cells and Methods
09/11/2014US20140252304 Phase-change memory and semiconductor recording/reproducing device
09/11/2014US20140252303 Memory Cells and Methods of Forming Memory Cells
09/11/2014US20140252302 Phase Change Memory Cells And Methods Of Forming Phase Change Memory Cells
09/11/2014US20140252301 Switching device structures and methods
09/11/2014US20140252300 Memory arrays and methods of forming the same
09/11/2014US20140252299 Semiconductor device and method for fabricating the same, and micro processor, processor, system, data storage system and memory system including the semiconductor device
09/11/2014US20140252298 Methods and apparatus for metal oxide reversible resistance-switching memory devices
09/11/2014US20140252297 Resistive Memory Cell Array with Top Electrode Bit Line
09/11/2014US20140252296 Resistive random-access memory
09/11/2014US20140252295 One transistor and one resistive (1t1r) random access memory (rram) structure with dual spacers
09/11/2014US20140252294 Phase change memory cell with heat shield
09/11/2014DE102013102210A1 Zur Minaturisierung geeignetes elektrisches Bauelement mit verringerter Verkopplung To miniaturization suitable electrical component with reduced coupling
09/09/2014US8830739 Non-volatile memory device having multi-level cells and method of forming the same
09/09/2014US8830730 Variable resistance nonvolatile storage device and method of forming memory cell
09/09/2014US8830722 Methods, apparatuses, and circuits for programming a memory device
09/09/2014US8829590 Variable resistance memory device
09/09/2014US8829581 Resistive memory devices
09/09/2014US8829484 Memory arrays
09/09/2014US8829483 Semiconductor device and manufacturing method thereof
09/04/2014WO2014133979A1 Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
09/04/2014US20140250244 Electronic devices having semiconductor magnetic memory units
09/04/2014US20140248765 Semiconductor memory device having dummy conductive patterns on interconnection and fabrication method thereof
09/04/2014US20140248740 Mixed valent oxide memory and method
09/04/2014US20140247654 Clamp elements, memories, and apparatuses for memories and methods for forming the same
09/04/2014US20140247648 Electronic device
09/04/2014US20140246645 Arrays Of Nonvolatile Memory Cells And Methods Of Forming Arrays Of Nonvolatile Memory Cells
09/04/2014US20140246644 Front to Back Resistive Random Access Memory Cells
09/04/2014US20140246642 Encapsulated phase change cell structures and methods
09/04/2014US20140246641 Resistive Switching Devices Having a Switching Layer And An Intermediate Electrode Layer and Methods of Formation Thereof
09/04/2014US20140246640 Doped Electrodes Used To Inhibit Oxygen Loss in ReRAM Device
09/02/2014US8824195 Methods of forming phase-change memory devices and devices so formed
09/02/2014US8822974 Memory cell arrays
09/02/2014US8822973 Memory cells and methods of forming memory cells
09/02/2014US8822972 Non-volatile memory element and manufacturing method thereof
09/02/2014US8822967 Multi-terminal phase change devices
09/02/2014US8821795 Combinatorial screening method and apparatus
08/2014
08/28/2014US20140242798 Polishing composition
08/28/2014US20140242773 Phase change memory device having self-aligned bottom electrode and fabrication method thereof
08/28/2014US20140242748 Methods of forming germanium-antimony-tellurium materials and chalcogenide materials
08/28/2014US20140241660 Optical closed loop microresonator and thyristor memory device
08/28/2014US20140241050 Nonvolatile semiconductor memory device
08/28/2014US20140241044 Structure of a switching device in an array
08/28/2014US20140239248 Three-dimensional nonvolatile memory and method of fabrication
08/28/2014US20140239245 Apparatuses including electrodes having a conductive barrier material and methods of forming same
08/28/2014US20140239244 Vertical mosfet transistor, in particular operating as a selector in nonvolatile memory devices
08/26/2014US8817524 Resistive random access memory cells having metal alloy current limiting layers
08/26/2014US8816719 Re-programmable antifuse FPGA utilizing resistive CeRAM elements
08/26/2014US8816316 Vertical transistor phase change memory
08/26/2014US8816313 Memory element and memory device
08/21/2014US20140235029 Bipolar Multistate Nonvolatile Memory
08/21/2014US20140231744 Methods for forming resistive switching memory elements
08/21/2014US20140231743 Memory cells and methods of forming memory cells
08/21/2014US20140231742 Resistance memory device
08/21/2014US20140231741 Planar resistive memory integration
08/21/2014US20140231740 Memory device
08/19/2014US8811062 Variable resistance memory device and method of manufacturing the same
08/19/2014US8811061 Memory device, semiconductor storage device, method for manufacturing memory device, and reading method for semiconductor storage device
08/19/2014US8811058 Resistance change element, method for manufacturing the same, and semiconductor memory
08/19/2014US8810003 Semiconductor device and method of fabricating the same
08/19/2014US8809830 Variable resistance memory
08/19/2014US8809108 Phase change memory cell with constriction structure
08/14/2014US20140227853 Method For Forming Resistance-Switching Memory Cell With Multiple Electrodes Using Nano-Particle Hard Mask
08/14/2014US20140225057 Resistance-Switching Memory Cell With Multiple Electrodes
08/14/2014US20140225056 Resistive-Switching Memory Elements Having Improved Switching Characteristics
08/14/2014US20140225055 Resistive switching device for a non-volatile memory device
08/14/2014US20140225054 Manufacturing method of non-volatile memory element, non-volatile memory element, and non-volatile memory device
08/14/2014US20140225053 Nonvolatile memory device and method for manufacturing the same
08/14/2014US20140224645 Multifunctional electrode
08/13/2014CN103988264A 包含金属氧化物电阻式存储器元件和反熔丝层的非易失性存储器单元 A nonvolatile memory cell comprising a metal oxide resistive memory element and the antifuse layer,
08/13/2014CN103985816A 一种铝/铁掺杂非晶碳膜/铝纳米薄膜记忆电阻存储器件及其制备方法 Amorphous carbon / aluminum nano-film memristor memory device and a method for preparing aluminum / iron-doped
08/13/2014CN102738389B 一种具有忆阻器特性的半导体器件及其制备方法 A semiconductor device memristor characteristics and its preparation method
08/13/2014CN102593142B 一种防串扰的柔性透明存储阵列及其制备方法 Flexible transparent storage array and method for preparing anti-crosstalk
08/12/2014US8803212 Three-dimensional crossbar array
08/12/2014US8803125 Cross-point memory utilizing Ru/Si diode
08/12/2014US8803121 Resistive memory element and related control method
08/12/2014US8803120 Diode and resistive memory device structures
08/12/2014US8802536 Phase-change memory device and method of fabricating the same
08/07/2014WO2014120843A1 Process for forming resistive switching memory cells using nano-particles
08/07/2014US20140220763 Memory Devices and Formation Methods
08/07/2014US20140220733 Antimony and germanium complexes useful for cvd/ald of metal thin films
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