Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
10/2014
10/02/2014WO2014158754A1 Resistive memory cell with reduced bottom electrode
10/02/2014US20140295639 Field focusing features in a reram cell
10/02/2014US20140295638 Three dimensional memory array architecture
10/02/2014US20140293687 Semiconductor device with pcm memory cells and nanotubes and related methods
10/02/2014US20140293678 Volatile/Non-Volatile Floating Electrode Logic/Memory Cell
10/02/2014US20140293676 Programmable impedance memory elements and corresponding methods
10/02/2014US20140291605 Nonvolatile memory cell and nonvolatile memory device including the same
10/02/2014US20140291604 Memory arrays and methods of forming same
10/02/2014US20140291603 Phase change memory and method of fabricating the phase change memory
10/02/2014US20140291602 Oxide memory resistor including semiconductor nanoparticles
10/02/2014US20140291601 Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor device
10/02/2014US20140291600 Resistive Random Access Memory Using amorphous metallic Glass Oxide as a storage medium
10/02/2014US20140291599 Resistive random access memory
10/02/2014US20140291598 Resistive random access memory
10/02/2014US20140291597 High-speed, High-density, and Low-power consumption Phase-change Memory Unit, and Preparation Method Thereof
09/2014
09/30/2014US8848423 Circuit and system of using FinFET for building programmable resistive devices
09/30/2014US8848421 Forming method of performing forming on variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device
09/30/2014US8848415 Three dimensional non-volatile storage with multi block row selection
09/30/2014US8848337 Signal processing devices having one or more memristors
09/30/2014US8847196 Resistive memory cell
09/30/2014US8847195 Structures for resistance random access memory and methods of forming the same
09/30/2014US8847194 Memory component including an ion source layer and a resistance change layer, and a memory device using the same
09/30/2014US8847193 Phase change current density control structure
09/30/2014US8847192 Resistive switching devices having alloyed electrodes and methods of formation thereof
09/30/2014US8847190 ALD processing techniques for forming non-volatile resistive switching memories
09/30/2014US8847189 Memory storage device and method of manufacturing the same
09/30/2014US8847188 Switching device and memory device including the same
09/30/2014US8847187 Method of forming anneal-resistant embedded resistor for non-volatile memory application
09/30/2014US8847186 Self-selecting PCM device not requiring a dedicated selector transistor
09/30/2014US8846515 Methods of forming electrical contacts
09/30/2014US8846484 ReRAM stacks preparation by using single ALD or PVD chamber
09/30/2014US8846483 Method of manufacturing a phase change semiconductor device and the phase change semiconductor device
09/30/2014US8846443 Atomic layer deposition of metal oxides for memory applications
09/25/2014WO2014150985A1 Metal aluminum nitride embedded resistors for resistive random memory access cells
09/25/2014US20140287535 Electronic device and method for fabricating the same
09/25/2014US20140284546 Memory element
09/25/2014US20140284545 In-Situ Nitride Initiation Layer For RRAM Metal Oxide Switching Material
09/25/2014US20140284544 Resistance random access memory device
09/25/2014US20140284543 Resistance random access memory device
09/25/2014US20140284541 Resistance random access memory device
09/25/2014US20140284540 Semiconductor device, semiconductor device manufacturing method, and semiconductor device manufacturing apparatus
09/25/2014US20140284538 Memory cells having storage elements that share material layers with steering elements and methods of forming the same
09/25/2014US20140284537 Memory element
09/25/2014US20140284536 Resistance random access memory device
09/23/2014US8842461 Phase change memory device having multi-level and method of driving the same
09/23/2014US8841745 Stress-engineered resistance-change memory device
09/23/2014US8841649 Three dimensional memory array architecture
09/23/2014US8841648 Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
09/23/2014US8841646 Semiconductor storage device and method for manufacturing same
09/23/2014US8841645 Multi-level memory cell
09/23/2014US8841643 Semiconductor memory device including buffer electrode
09/23/2014US8841642 Memory element and method for manufacturing the same, and semiconductor device
09/18/2014WO2014145995A2 Expandable inter-body fusion devices and methods
09/18/2014WO2014145445A2 Opposed piston internal combustion engine with inviscid layer sealing
09/18/2014WO2014142040A1 Electronic element
09/18/2014WO2014139277A1 Gate device unit for cross array integration mode of bipolar resistive random access memory
09/18/2014US20140273395 Methods of forming a thin layer and methods of manufacturing a phase change memory device using the same
09/18/2014US20140273314 High Productivity Combinatorial Workflow to Screen and Design Chalcogenide Materials as Non Volatile Memory Current Selector
09/18/2014US20140273300 Method for Forming ReRAM Chips Operating at Low Operating Temperatures
09/18/2014US20140269046 Apparatuses and methods for use in selecting or isolating memory cells
09/18/2014US20140269007 Complementary metal oxide or metal nitride heterojunction memory devices with asymmetric hysteresis property
09/18/2014US20140269005 Electronic devices having semiconductor memory units and method for fabricating the same
09/18/2014US20140269004 Method for Improving Data Retention of ReRAM Chips Operating at Low Operating Temperatures
09/18/2014US20140269002 Two-terminal memory with intrinsic rectifying characteristic
09/18/2014US20140269001 Amorphous silicon rram with non-linear device and operation
09/18/2014US20140268998 Rram with dual mode operation
09/18/2014US20140268995 Semiconductor device and electronic device including the same
09/18/2014US20140268992 Memory Cells, Memory Systems, and Memory Programming Methods
09/18/2014US20140268991 Chalcogenide material and methods for forming and operating devices incorporating the same
09/18/2014US20140268990 Stackable non-volatile memory
09/18/2014US20140268989 Resistive non-volatile memory
09/18/2014US20140268988 Resistive memory cell
09/18/2014US20140264251 Memory cell with redundant carbon nanotube
09/18/2014US20140264250 Low temperature in-situ doped silicon-based conductor material for memory cell
09/18/2014US20140264249 Nonvolatile memory device and method of manufacturing the same
09/18/2014US20140264248 Sidewall-Type Memory Cell
09/18/2014US20140264247 Resistive Memory Cell with Reduced Bottom Electrode
09/18/2014US20140264246 Resistive Memory Cell with Trench-Shaped Bottom Electrode
09/18/2014US20140264245 Resistive Memory Cell with Trench-Shaped Bottom Electrode
09/18/2014US20140264244 Nonvolative memory
09/18/2014US20140264243 Nonvolative memory with filament
09/18/2014US20140264242 Disturb-resistant non-volatile memory device and method
09/18/2014US20140264241 ZnTe on TiN or Pt Electrodes as a Resistive Switching Element for ReRAM Applications
09/18/2014US20140264240 Method for making memory cell by melting phase change material in confined space
09/18/2014US20140264239 Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory array
09/18/2014US20140264238 Scaling of filament based rram
09/18/2014US20140264237 Resistive ram and fabrication method
09/18/2014US20140264236 Controlling on-state current for two-terminal memory
09/18/2014US20140264234 Resistance variable memory structure and method of forming the same
09/18/2014US20140264233 Resistance variable memory structure and method of forming the same
09/18/2014US20140264232 Low temperature transition metal oxide for memory device
09/18/2014US20140264231 Confined Defect Profiling within Resistive Random Memory Access Cells
09/18/2014US20140264230 Phase change material switch and method of making the same
09/18/2014US20140264229 Low form voltage resistive random access memory (rram)
09/18/2014US20140264228 Fin selector with gated rram
09/18/2014US20140264227 Semiconductor memory and method of manufacturing the same
09/18/2014US20140264226 Integration of an amorphous silicon resistive switching device
09/18/2014US20140264225 Resistance-variable memory device
09/18/2014US20140264224 Performance Enhancement of Forming-Free ReRAM Devices Using 3D Nanoparticles
09/18/2014US20140264223 Metal Aluminum Nitride Embedded Resistors for Resistive Random Memory Access Cells
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