Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
11/2014
11/04/2014US8877550 Methods for forming resistive switching memory elements by heating deposited layers
10/2014
10/30/2014US20140322888 Variable resistance memory device and method of fabricating the same
10/30/2014US20140322887 Surface Treatment to Improve Resistive-Switching Characteristics
10/30/2014US20140322886 Resistive memory device and fabrication method thereof
10/30/2014US20140322885 Method of making a resistive random access memory device
10/30/2014US20140322884 Nonvolatile resistive memory element with a silicon-based switching layer
10/30/2014US20140322862 Method of making a resistive random access memory device with metal-doped resistive switching layer
10/30/2014US20140321193 3d variable resistance memory device and method of manufacturing the same
10/30/2014US20140319449 Creating An Embedded ReRam Memory From A High-K Metal Gate Transistor Structure
10/30/2014US20140319448 Method for forming a pcram with low reset current
10/30/2014US20140319447 Semiconductor Constructions and Memory Arrays
10/30/2014US20140319446 Resistive ram devices and methods
10/30/2014US20140319445 Resistive memory device and fabrication method thereof
10/30/2014US20140319444 Memory Cells and Methods of Making Memory Cells
10/30/2014US20140319443 Sequential Atomic Layer Deposition of Electrodes and Resistive Switching Components
10/30/2014US20140319442 Resistance random access memory device
10/28/2014US8873281 Memory element and memory device
10/28/2014US8873276 Resistive-switching nonvolatile memory elements
10/28/2014US8873271 3D architecture for bipolar memory using bipolar access device
10/28/2014US8872268 Controlled localized defect paths for resistive memories
10/28/2014US8872153 Device structure for long endurance memristors
10/28/2014US8872152 IL-free MIM stack for clean RRAM devices
10/28/2014US8872150 Memory constructions
10/28/2014US8872148 Phase-change memory devices
10/28/2014US8872147 Method for manufacturing nonvolatile semiconductor storage device and nonvolatile semiconductor storage device
10/28/2014US8872146 Phase-change random access memory device and method of manufacturing the same
10/28/2014US8871574 Memory cells, memory cell constructions, and memory cell programming methods
10/28/2014US8871564 Diffusion barrier layer for resistive random access memory cells
10/28/2014US8871561 Variable resistance nonvolatile storage device and method for manufacturing the same
10/28/2014US8871559 Methods for fabricating phase change memory devices
10/28/2014US8871364 Perovskite manganese oxide thin film
10/23/2014US20140315369 Resistive Random Access Memory Cells Having METAL ALLOY Current Limiting layers
10/23/2014US20140313816 Select device for cross point memory structures
10/23/2014US20140312297 Device structure for a rram and method
10/23/2014US20140312296 Three-dimensional oblique two-terminal memory with enhanced electric field
10/23/2014US20140312294 Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor device
10/23/2014US20140312293 Variable resistance non-volatile memory device and manufacturing method thereof
10/23/2014US20140312292 Memristors and methods of fabrication
10/23/2014US20140312291 Nonvolatile Memory Cells And Methods Of Forming Nonvolatile Memory Cells
10/21/2014US8867267 Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
10/21/2014US8866123 Non-volatile memory device and production method thereof
10/21/2014US8866121 Current-limiting layer and a current-reducing layer in a memory device
10/21/2014US8866120 Semiconductor memory
10/21/2014US8866119 Memory device and method for manufacturing same
10/21/2014US8866118 Morphology control of ultra-thin MeOx layer
10/21/2014US8866117 Semiconductor storage device including a diode and a variable resistance element
10/21/2014US8866116 Semiconductor memory devices having predetermined conductive metal levels and methods of fabricating the same
10/21/2014US8865558 Method of forming a phase change material layer pattern and method of manufacturing a phase change memory device
10/16/2014US20140308802 Method of making a multicomponent film
10/16/2014US20140308797 Methods of forming variable resistive memory devices
10/16/2014US20140308796 Method for fabricating a semiconductor device
10/16/2014US20140308786 High-integration semiconductor memory device and method of manufacturing the same
10/16/2014US20140308776 Methods of Forming Phase Change Materials and Methods of Forming Phase Change Memory Circuitry
10/16/2014US20140306287 Semiconductor device and fabrication method thereof
10/16/2014US20140306173 Resistive memory and method for fabricating the same
10/16/2014US20140306172 Integrated circuit system with non-volatile memory and method of manufacture thereof
10/14/2014US8861728 Integrated circuit tamper detection and response
10/14/2014US8861266 Planar phase-change memory cell with parallel electrical paths
10/14/2014US8861257 Nonvolatile memory element, manufacturing method thereof, nonvolatile memory device, and design support method for nonvolatile memory element
10/14/2014US8861254 Memory cell
10/14/2014US8860182 Resistance random access memory device
10/14/2014US8860111 Phase change memory cell array with self-converged bottom electrode and method for manufacturing
10/14/2014US8860004 State changing device
10/14/2014US8860003 Resistive memory device and fabrication method thereof
10/14/2014US8860002 Limited maximum fields of electrode-switching layer interfaces in Re-RAM cells
10/14/2014US8860000 Nonvolatile semiconductor memory device and method of manufacturing the same
10/14/2014US8859385 Method of fabricating semiconductor device
10/14/2014US8859382 Methods of forming metal oxide and memory cells
10/14/2014US8859344 Semiconductor memory
10/14/2014US8859329 Memory cells and methods of forming memory cells
10/14/2014US8859328 Multifunctional electrode
10/14/2014US8859327 Method for manufacturing a non-volatile semiconductor memory device
10/09/2014WO2014164378A1 Resistive memory cell with trench-shaped bottom electrode
10/09/2014WO2014164268A1 Voltage-controlled resistor based on phase transition materials
10/09/2014WO2014164015A1 Sidewall-type memory cell
10/09/2014WO2014163994A1 Methods and apparatus for metal oxide reversible resistance-switching memory devices
10/09/2014US20140302659 Method for Reducing Forming Voltage in Resistive Random Access Memory
10/09/2014US20140301137 Phase-change memory device having phase-change region divided into multi layers and operating method thereof
10/09/2014US20140301128 3d variable resistance memory device having junction fet and driving method thereof
10/09/2014US20140301127 Semiconductor device and electronic device including the same
10/09/2014US20140299834 Memory Device Having An Integrated Two-Terminal Current Limiting Resistor
10/09/2014US20140299833 Chalcogenide switching device using germanium and selenium and manufacturing method thereof
10/09/2014US20140299832 Nonvolatile memory elements having conductive structures with semimetals and/or semiconductors
10/09/2014US20140299831 3d variable resistance memory device and method of manufacturing the same
10/09/2014US20140299830 Semiconductor device and method for fabricating the same
10/07/2014US8854864 Nonvolatile memory element and nonvolatile memory device
10/07/2014US8854863 Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
10/07/2014US8854860 Metal-insulator transition latch
10/07/2014US8853682 Methods of self-aligned growth of chalcogenide memory access device
10/07/2014US8853663 Nonvolatile memory device and manufacturing method thereof
10/07/2014US8853662 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor
10/07/2014US8853661 Metal aluminum nitride embedded resistors for resistive random memory access cells
10/07/2014US8853659 Switchable electronic device and method of switching said device
10/07/2014US8853047 Self aligned fin-type programmable memory cell
10/07/2014US8853044 Phase-change random access memory device and method of manufacturing the same
10/07/2014US8852996 Carbon doped resistive switching layers
10/07/2014US8852686 Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
10/02/2014WO2014160460A1 Atomic layer deposition of reduced-leakage post-transition metal oxide films
10/02/2014WO2014159629A1 Confined defect profiling within resistive random memory access cells
10/02/2014WO2014158793A1 Memory cell with trench-shaped bottom electrode
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