Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
12/2014
12/02/2014US8902632 Hybrid resistive memory devices and methods of operating and manufacturing the same
12/02/2014US8902629 Forming method of performing forming on variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device
12/02/2014US8901712 Semiconductor memory device
12/02/2014US8901532 Non-volatile programmable device including phase change layer and fabricating method thereof
12/02/2014US8901530 Nonvolatile memory device using a tunnel oxide as a passive current steering element
12/02/2014US8901528 Phase-change random access memory and method of manufacturing the same
12/02/2014US8901527 Resistive random access memory structure with tri-layer resistive stack
12/02/2014US8901526 Variable resistive memory device
12/02/2014US8901009 Methods of manufacturing semiconductor devices
12/02/2014US8900965 Nonvolatile memory device manufacturing method
12/02/2014US8900963 Methods of forming semiconductor device structures, and related structures
12/02/2014US8900930 Method to make RF-PCM switches and circuits with phase-change materials
11/2014
11/27/2014US20140346435 Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
11/27/2014US20140346434 Nonvolatile variable resistance element
11/27/2014US20140346433 Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
11/27/2014US20140346432 On/off ratio for nonvolatile memory device and method
11/27/2014US20140346431 Memory Structures, Memory Arrays, Methods of Forming Memory Structures and Methods of Forming Memory Arrays
11/27/2014US20140346430 Memory device
11/27/2014US20140346429 Semiconductor Constructions and Methods of Forming Memory Cells
11/27/2014US20140346428 Memory cell structures
11/27/2014US20140346427 Selective deposition of silver for non-volatile memory device fabrication
11/27/2014US20140346426 Memristor with Channel Region in Thermal Equilibrium with Containing Region
11/27/2014US20140346425 Phase change memory cell with constriction structure
11/27/2014US20140346424 Cross-Point Memory Utilizing RU/SI Diode
11/27/2014US20140346423 Memristor Comprising Film with Comb-Like Structure of Nanocolumns of Metal Oxide Embedded in a Metal Oxide Matrix
11/25/2014US8897056 Pillar-shaped nonvolatile memory and method of fabrication
11/25/2014US8896070 Patterning embedded control lines for vertically stacked semiconductor elements
11/25/2014US8896045 Integrated circuit including sidewall spacer
11/25/2014US8896033 Electrochemical transistor
11/25/2014US8895952 Nonvolatile storage device
11/25/2014US8895951 Closed loop sputtering controlled to enhance electrical characteristics in deposited layer
11/25/2014US8895949 Nonvolatile memory device using a varistor as a current limiter element
11/25/2014US8895948 Memory device
11/25/2014US8895401 Method of forming a memory device incorporating a resistance variable chalcogenide element
11/25/2014US8895390 Memory device with a textured lowered electrode
11/20/2014US20140339494 Memory Cells and Memory Cell Arrays
11/20/2014US20140339493 Etch bias homogenization
11/20/2014US20140339491 Filamentary memory devices and methods
11/20/2014US20140339490 Resistive switching memory device having improved nonlinearity and method of fabricating the same
11/20/2014US20140339489 Phase-change memory device and method for manufacturing the same
11/20/2014US20140339488 Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor device
11/18/2014US8891284 Memristors based on mixed-metal-valence compounds
11/18/2014US8890110 Vertical memory device and method of fabricating the same
11/18/2014US8890109 Resistive random access memory access cells having thermally isolating structures
11/18/2014US8890108 Memory device having vertical selection transistors with shared channel structure and method for making the same
11/18/2014US8890107 Semiconductor memory
11/18/2014US8890105 Nonvolatile memory
11/18/2014US8889538 Methods of forming diodes
11/18/2014US8889527 Phase change memory and method therefor
11/18/2014US8889521 Method for silver deposition for a non-volatile memory device
11/18/2014US8889520 Bipolar junction transistors, memory arrays, and methods of forming bipolar junction transistors and memory arrays
11/18/2014US8889492 Bipolar multistate nonvolatile memory
11/18/2014US8889479 Nonvolatile memory elements with metal-deficient resistive-switching metal oxides
11/18/2014US8889478 Method for manufacturing nonvolatile semiconductor memory element, and nonvolatile semiconductor memory element
11/13/2014US20140335675 Regulating interface layer growth with n2o for two-terminal memory
11/13/2014US20140335669 Embedded non-volatile memory
11/13/2014US20140332751 Memory Cells, Methods of Programming Memory Cells, and Methods of Forming Memory Cells
11/13/2014US20140332750 Transistors, Memory Cells and Semiconductor Constructions
11/13/2014US20140332749 Semiconductor device and method of manufacturing same
11/13/2014US20140332748 Three dimensional resistive memory
11/13/2014US20140332747 Memristor based on a mixed metal oxide
11/13/2014US20140332746 Single crystal high dielectric constant material and method for making same
11/11/2014US8885389 Continuous mesh three dimensional non-volatile storage with vertical select devices
11/11/2014US8885387 Cross point variable resistance nonvolatile memory device
11/11/2014US8885385 Memory element and memory device
11/11/2014US8885381 Three dimensional non-volatile storage with dual gated vertical select devices
11/11/2014US8884444 Nonvolatile memory device and manufacturing method thereof
11/11/2014US8884401 Systems and methods for fabricating self-aligned memory cell
11/11/2014US8884397 Memory device and storage apparatus
11/11/2014US8884285 Multifunctional zinc oxide nano-structure-based circuit building blocks for re-configurable electronics and optoelectronics
11/11/2014US8884264 Variable resistance memory device
11/11/2014US8884263 Non-volatile memory device having conductive buffer pattern and method of fabricating the same
11/11/2014US8884262 Non-volatile memory device having a resistance-changeable element and method of forming the same
11/11/2014US8884261 Device switching using layered device structure
11/11/2014US8884260 Phase change memory element
11/11/2014US8883655 Atomic layer deposition of metal oxide materials for memory applications
11/11/2014US8883604 Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell
11/11/2014US8883602 Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
11/11/2014US8883590 Phase change memory apparatus and fabrication method thereof
11/11/2014US8883589 Counter doping compensation methods to improve diode performance
11/11/2014US8883569 Continuous mesh three dimensional non-volatile storage with vertical select devices
11/11/2014US8883557 Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
11/06/2014US20140329369 Pinched center resistive change memory cell
11/06/2014US20140329357 Tellurium compounds useful for deposition of tellurium containing materials
11/06/2014US20140326942 Non-volatile memory device having multi-level cells and method of forming the same
11/06/2014US20140326941 Resistive memory and methods of processing resistive memory
11/06/2014US20140326940 Semiconductor memory device and production method thereof
11/06/2014US20140326939 Method for manufacturing semiconductor memory device and semiconductor memory device
11/04/2014US8879300 Switchable two-terminal devices with diffusion/drift species
11/04/2014US8879299 Non-volatile memory cell containing an in-cell resistor
11/04/2014US8878342 Using alloy electrodes to dope memristors
11/04/2014US8878322 Perovskite manganese oxide thin film and manufacturing method therefor
11/04/2014US8878276 Diode for variable-resistance material memories, processes of forming same, and methods of using same
11/04/2014US8878240 Variable resistance memory device and method for fabricating the same
11/04/2014US8878235 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
11/04/2014US8878156 Memory device having stitched arrays of 4 F2 memory cells
11/04/2014US8878155 Resistance variable memory device with nanoparticle electrode and method of fabrication
11/04/2014US8878153 Variable resistance element having gradient of diffusion coefficient of ion conducting layer
11/04/2014US8878151 Multistate nonvolatile memory elements
11/04/2014US8877586 Process for forming resistive switching memory cells using nano-particles
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