| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 01/29/2015 | US20150029787 Non-Volatile Resistance-Switching Thin Film Devices |
| 01/29/2015 | US20150029780 Two-terminal reversibly switchable memory device |
| 01/29/2015 | US20150029775 Memory cell array structures and methods of forming the same |
| 01/29/2015 | US20150028284 Memory cells having a number of conductive diffusion barrier materials and manufacturing methods |
| 01/29/2015 | US20150028283 Methods of Forming Memory Cells and Arrays |
| 01/29/2015 | US20150028282 Resistance switching device and process for producing thereof |
| 01/29/2015 | US20150028281 Resistive memory structure |
| 01/29/2015 | US20150028280 Memory cell with independently-sized elements |
| 01/29/2015 | US20150028279 Resistive random access memory devices with extremely reactive contacts |
| 01/29/2015 | US20150028278 Nonvolatile memory transistor and device including the same |
| 01/29/2015 | DE102007011837B4 Integrierter Schaltkreis mit modifizierbarem Gate-Stapel-Speicherelement, Verwendung des integrierten Schaltkreises, Verfahren zum Herstellen eines integrierten Schaltkreises, sowie Speichermodul, System und hybrides Massenspeichersystem An integrated circuit comprising modifiable gate stack memory element, use of the integrated circuit, method for manufacturing an integrated circuit, as well as memory module, system, and hybrid storage system |
| 01/28/2015 | CN103050623B 一种具备多阻态特性的二阶忆阻器及其调制方法 One kind with multi-impedance characteristics of second-order memristor and modulation method |
| 01/27/2015 | US8941110 E-fuses containing at least one underlying tungsten contact for programming |
| 01/27/2015 | US8941094 Methods for adjusting the conductivity range of a nanotube fabric layer |
| 01/27/2015 | US8941090 Resistive memory device, method of fabricating the same, and memory apparatus and data processing system having the same |
| 01/27/2015 | US8941089 Resistive switching devices and methods of formation thereof |
| 01/27/2015 | US8941088 Nonvolatile memory with resistance change layer |
| 01/27/2015 | US8940577 Programmable metallization cells and methods of forming the same |
| 01/22/2015 | WO2015007108A1 Phase change memory unit and preparation method therefor |
| 01/22/2015 | US20150024571 Resistive memory device and fabrication method thereof |
| 01/22/2015 | US20150021543 Programmably Reversible Resistive Device Cells Using CMOS Logic Processes |
| 01/22/2015 | US20150021542 Memory cell of resistive random access memory and manufacturing method thereof |
| 01/22/2015 | US20150021541 Resistive memory having confined filament formation |
| 01/22/2015 | US20150021540 Method of making a resistive random access memory device |
| 01/22/2015 | US20150021539 Resistive memory with small electrode and method for fabricating the same |
| 01/22/2015 | US20150021538 Device switching using layered device structure |
| 01/22/2015 | US20150021537 Method of making a resistive random access memory device |
| 01/22/2015 | DE102009006402B4 Resistiv arbeitende Speicherzelle, resistiv arbeitende Speichervorrichtung und Verfahren zur Herstellung derselben Resistive working memory cell, resistive working memory device and method of manufacturing the same |
| 01/21/2015 | EP2827367A1 Resistance change memory |
| 01/21/2015 | CN204118135U 一种新型相变存储单元结构 A new phase-change memory cell structure |
| 01/21/2015 | CN104303308A 包含纳米-轨道电极的非易失性存储单元 Comprising nano - Track electrode nonvolatile memory cell |
| 01/21/2015 | CN104300081A 相变存储器的加热电极及其制备方法 Heating electrodes and preparation phase change memory |
| 01/21/2015 | CN103378288B 相变存储器的形成方法 The method of forming a phase change memory |
| 01/21/2015 | CN103050624B 用于相变存储器的Ga-Ge-Sb-Te薄膜材料 Phase change memory Ga-Ge-Sb-Te thin film material used for |
| 01/21/2015 | CN103035839B 阻变存储器及其制备方法 Resistance change memory and its preparation method |
| 01/21/2015 | CN103035838B 阻变存储器件及其制备方法 Resistance change memory device and method of preparation |
| 01/21/2015 | CN102856491B 形成底部电极和相变电阻的方法 Forming a bottom electrode and the phase-change resistance method |
| 01/20/2015 | US8937830 Semiconductor memory device |
| 01/20/2015 | US8937292 Vertical cross point arrays for ultra high density memory applications |
| 01/20/2015 | US8937290 Memory cells |
| 01/20/2015 | US8936703 Methods to fabricate non-metal films on semiconductor substrates using physical vapor deposition |
| 01/15/2015 | US20150017780 Nonvolatile Resistive Memory Element With an Integrated Oxygen Isolation Structure |
| 01/15/2015 | US20150016178 All around electrode for novel 3D RRAM applications |
| 01/15/2015 | US20150014623 Memory Constructions |
| 01/15/2015 | US20150014622 Non-volatile memory device |
| 01/15/2015 | US20150014621 Variable resistance memory device and method of manufacturing the same |
| 01/14/2015 | CN104285295A 变阻型存储装置 Rheostat type storage device |
| 01/14/2015 | CN104282833A 阻变存储器件及其制造方法 Memory device and method of manufacturing resistive |
| 01/14/2015 | CN102790073B 电阻变化型非易失性存储装置以及存储器单元的形成方法 The method of forming a resistance variable type nonvolatile memory device and a memory unit of |
| 01/14/2015 | CN102473454B 具有改进的切换的pcmo非易失阻性存储器 Having improved resistive switching nonvolatile memory pcmo |
| 01/13/2015 | US8934294 Semiconductor integrated circuit device, method of manufacturing the same, and method of driving the same |
| 01/13/2015 | US8934285 Method and apparatus for forming a contact in a cell of a resistive random access memory to reduce a voltage required to program the cell |
| 01/13/2015 | US8934283 Semiconductor memory device, semiconductor device and method of manufacturing semiconductor memory device |
| 01/13/2015 | US8933536 Polysilicon pillar bipolar transistor with self-aligned memory element |
| 01/13/2015 | US8933516 High capacity select switches for three-dimensional structures |
| 01/13/2015 | US8933496 Electronically controlled squishable composite switch |
| 01/13/2015 | US8933491 Arrays of memory cells and methods of forming an array of vertically stacked tiers of memory cells |
| 01/13/2015 | US8933431 Dual-plane memory array |
| 01/13/2015 | US8933430 Variable resistance memory device and method of manufacturing the same |
| 01/13/2015 | US8933429 Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory array |
| 01/13/2015 | US8933428 Phase change memory |
| 01/13/2015 | US8932959 Method and system for etching plural layers on a workpiece including a lower layer containing an advanced memory material |
| 01/13/2015 | US8932901 Stressed phase change materials |
| 01/13/2015 | US8932900 Phase change memory and method of fabricating same |
| 01/13/2015 | US8932897 Phase change memory cell |
| 01/08/2015 | WO2015002206A1 Semiconductor device and dielectric film |
| 01/08/2015 | US20150011071 Diffusion Barrier Layer for Resistive Random Access Memory Cells |
| 01/08/2015 | US20150008388 Variable resistance memory |
| 01/08/2015 | US20150008387 Self-selecting pcm device not requiring a dedicated selector transistor |
| 01/08/2015 | US20150008386 Morphology control of ultra-thin MeOx layer |
| 01/08/2015 | US20150008385 Memory device |
| 01/07/2015 | CN103022350B 忆阻器件及其制备方法 Memristor device and its preparation method |
| 01/07/2015 | CN102623633B 一种电阻型随机存储器的存储单元及其制备方法 Storage unit and a method for preparing resistive random access memory |
| 01/07/2015 | CN102612763B 相变化材料及相变化型存储元件 A phase change material and phase change memory element |
| 01/06/2015 | US8927957 Sidewall diode driving device and memory using same |
| 01/06/2015 | US8927956 Resistance type memory device |
| 01/06/2015 | US8927955 Resistance change memory |
| 01/06/2015 | US8927419 Chip comprising an integrated circuit, fabrication method and method for locally rendering a carbonic layer conductive |
| 01/06/2015 | US8927331 Method of manufacturing nonvolatile memory device |
| 01/06/2015 | US8927328 3 dimensional semiconductor device and method of manufacturing the same |
| 01/06/2015 | US8927301 Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor |
| 01/06/2015 | US8927060 Method for forming Ge-Sb-Te film and storage medium |
| 01/01/2015 | US20150004747 Reram device structure |
| 01/01/2015 | US20150003144 Resistive random-access memory cells |
| 01/01/2015 | US20150001461 Semiconductor Constructions, Memory Cells, Memory Arrays and Methods of Forming Memory Cells |
| 01/01/2015 | US20150001459 Phase change memory cell with large electrode contact area |
| 01/01/2015 | US20150001458 Self-aligned cross-point phase change memory-switch array |
| 01/01/2015 | US20150001457 Phase-change memory cells |
| 01/01/2015 | US20150001456 Resistance variable element, semiconductor device including it and manufacturing methods therefor |
| 12/30/2014 | US8923050 3D memory with vertical bit lines and staircase word lines and vertical switches and methods thereof |
| 12/30/2014 | US8922018 Semiconductor device and semiconductor device manufacturing method |
| 12/30/2014 | US8921823 Memory cell constructions, and methods for fabricating memory cell constructions |
| 12/30/2014 | US8921822 Phase-change random access memory device and method of manufacturing the same |
| 12/30/2014 | US8921821 Memory cells |
| 12/30/2014 | US8921820 Phase change memory cell with large electrode contact area |
| 12/30/2014 | US8921819 Resistive random access memory and fabrication method thereof |
| 12/30/2014 | US8921818 Resistance variable memory structure |
| 12/30/2014 | US8921816 Semiconductor device having a diode |
| 12/30/2014 | US8921214 Variable resistance memory device and method for fabricating the same |
| 12/30/2014 | US8921200 Nonvolatile storage element and method of manufacturing thereof |