Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
12/2014
12/30/2014US8921196 Double patterning method for creating a regular array of pillars with dual shallow trench isolation
12/30/2014US8921180 High-integration semiconductor memory device and method of manufacturing the same
12/30/2014US8921156 Non-volatile resistive-switching memories
12/30/2014US8921155 Resistive random access memory (RAM) cell and method for forming
12/30/2014US8921154 Method of forming anneal-resistant embedded resistor for non-volatile memory application
12/30/2014US8920684 Al-Sb-Te phase change material used for phase change memory and fabrication method thereof
12/25/2014US20140377932 Method for manufacturing nonvolatile semiconductor storage device and nonvolatile semiconductor storage device
12/25/2014US20140377931 Metal Aluminum Nitride Embedded Resistors for Resistive Random Memory Access Cells
12/25/2014US20140377929 Resistive memory with a stabilizer
12/25/2014US20140376309 Phase change memory material and system for embedded memory applications
12/25/2014US20140376301 Memory element and memory device
12/25/2014US20140374693 Varied multilayer memristive device
12/25/2014US20140374692 Semiconductor memory apparatus and fabrication method thereof
12/25/2014US20140374691 Non-volatile semiconductor memory device and method of manufacturing non-volatile semiconductor memory device
12/25/2014US20140374690 Semiconductor element and semiconductor device
12/25/2014US20140374689 Conductive oxide random access memory (coram) cell and method of fabricating same
12/25/2014US20140374688 High Capacity Select Switches for Three-Dimensional Structures
12/25/2014US20140374687 Resistive memory with a stabilizer
12/25/2014US20140374686 Thermal-disturb mitigation in dual-deck cross-point memories
12/25/2014US20140374685 Phase change current density control structure
12/25/2014US20140374684 Variable resistance memory device and method of manufacturing the same
12/25/2014US20140374683 Variable resistance memory device and method of manufacturing the same
12/24/2014CN104241527A 用于相变存储器的V-Sb-Te相变材料体系及其制备方法 For phase change memory V-Sb-Te phase change material system and its preparation method
12/24/2014CN104241526A 相变化存储器、其写入方法及其读取方法 Phase change memory write method and reading method
12/24/2014CN104241525A 可变电阻存储器件及其制造方法 A variable resistance memory device and manufacturing method thereof
12/24/2014CN104241524A 可变电阻存储器件及其制造方法 A variable resistance memory device and manufacturing method thereof
12/24/2014CN104241523A 三维半导体器件及其制造方法 Three-dimensional semiconductor device and manufacturing method thereof
12/24/2014CN104241522A 半导体集成电路装置及其制造方法 The semiconductor integrated circuit device and manufacturing method thereof
12/24/2014CN104241521A 存储阵列及其操作方法和制造方法 The storage array and its operation method and a manufacturing method
12/24/2014CN102956817B 相变存储器的制造方法 The method of manufacturing a phase change memory
12/24/2014CN102800805B 相变存储单元及其形成方法 Phase change memory cell and method of forming
12/24/2014CN102709471B 利用选择性生长的可逆电阻切换元件的存储器单元以及形成该存储器单元的方法 Utilizing selective growth of the reversible resistance-switching element of the memory cell and a method of forming the memory cell
12/24/2014CN102544355B 相变存储材料及其制备方法、具有相变存储材料的存储器及其制备方法 Phase change memory material and method, with the phase-change memory material storage and preparation method
12/23/2014US8917545 Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same
12/23/2014US8916973 Semiconductor device with electrode structure including graphene pattern formed over metal pattern
12/23/2014US8916949 Resistive memory device and method for manufacturing the same
12/23/2014US8916848 Resistance change device and memory cell array
12/23/2014US8916847 Variable resistance memory device and method for fabricating the same
12/23/2014US8916846 Nonvolatile memory device
12/23/2014US8916845 Low operational current phase change memory structures
12/23/2014US8916414 Method for making memory cell by melting phase change material in confined space
12/18/2014US20140369114 Phase-change memory cells
12/18/2014US20140369113 Phase-change memory cells
12/18/2014US20140369107 Structures for resistance random access memory and methods of forming the same
12/18/2014US20140367631 Self-rectifying rram element
12/18/2014US20140367630 Semiconductor device and method for manufacturing same
12/18/2014US20140367629 Conductive metal oxide structures in non volatile re writable memory devices
12/17/2014CN102420014B 半导体存储设备 Semiconductor memory device
12/16/2014US8913418 Confined defect profiling within resistive random memory access cells
12/16/2014US8913417 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
12/16/2014US8913415 Circuit and system for using junction diode as program selector for one-time programmable devices
12/16/2014US8912655 Semiconductor memory device, method of manufacturing the same and method of forming contact structure
12/16/2014US8912524 Defect gradient to boost nonvolatile memory performance
12/16/2014US8912523 Conductive path in switching material in a resistive random access memory device and control
12/16/2014US8912521 Non-volatile semiconductor memory device
12/16/2014US8912520 Nanoscale switching device
12/16/2014US8912519 Variable resistive memory device and method of fabricating the same
12/16/2014US8912518 Resistive random access memory cells having doped current limiting layers
12/16/2014US8912516 Memory element with ion source layer and memory device
12/16/2014US8912515 Manufacturing method for pipe-shaped electrode phase change memory
12/16/2014US8912039 Semiconductor device and manufacturing method thereof
12/11/2014US20140363948 Method of forming anneal-resistant embedded resistor for non-volatile memory application
12/11/2014US20140363947 Resistive memory cell fabrication methods and devices
12/11/2014US20140363920 Atomic Layer Deposition of Metal Oxides for Memory Applications
12/11/2014US20140362634 Oxide based memory
12/11/2014US20140361241 Semiconductor storage device and method for manufacturing same
12/11/2014US20140361239 Three dimensional memory array with select device
12/11/2014US20140361238 Resistance variable memory cell structures and methods
12/11/2014US20140361237 Memory storage device and method of manufacturing the same
12/11/2014US20140361236 ALD processing techniques for forming non-volatile resistive switching memories
12/11/2014US20140361235 Nonvolatile Resistive Memory Element With A Metal Nitride Containing Switching Layer
12/11/2014US20140361234 Electric element
12/11/2014US20140361233 3 dimensional semiconductor device and method of manufacturing the same
12/10/2014CN104201282A 相变存储器及其制备方法 A phase change memory and its preparation method
12/10/2014CN104201281A 一种有机无机复合阻变存储器及其制备方法 An organic-inorganic composite resistive memory and its preparation method
12/10/2014CN103346255B 一种异质结、铁电隧道结及其制备方法和应用 A heterogeneous nodes, ferroelectric tunnel junction and its preparation method and application
12/10/2014CN103094477B 氧化锆电阻存储器薄膜制备方法及其阻变特性的测试方法 Preparation of zirconia resistance memory and resistive properties of thin film method test method
12/10/2014CN102867913B 一种形成磁阻存储器环状存储单元的方法 A method of forming a magnetoresistive memory cells of a memory cyclic
12/10/2014CN102656689B 存储装置及其制造方法 Storage device and manufacturing method thereof
12/10/2014CN102484119B 带有具有倒圆拐角的多个支柱的交叉点非易失性存储器件及其制造方法 Crosspoint rounded corners having a plurality of columns of non-volatile memory device and manufacturing method with
12/09/2014US8907455 Voltage-controlled switches
12/09/2014US8907318 Resistance change memory
12/09/2014US8907317 Silicon based nanoscale crossbar memory
12/09/2014US8907316 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
12/09/2014US8907315 Memory cells and methods of forming memory cells
12/09/2014US8907314 MoOx-based resistance switching materials
12/09/2014US8907313 Controlling ReRam forming voltage with doping
12/09/2014US8906790 Combinatorial approach for screening of ALD film stacks
12/04/2014US20140357046 ReRAM Cells Including TaXSiYN Embedded Resistors
12/04/2014US20140355338 Non-volatile phase-change resistive memory
12/04/2014US20140353573 Methods and systems to reduce location-based variations in switching characteristics of 3d reram arrays
12/04/2014US20140353572 Resistance random access memory device
12/04/2014US20140353571 Vertical transistor phase change memory
12/04/2014US20140353570 Memristor
12/04/2014US20140353569 Variable resistance memory device and method of manufacturing the same
12/04/2014US20140353568 Thermally optimized phase change memory cells and methods of fabricating the same
12/04/2014US20140353567 Current-limiting layer and a current-reducing layer in a memory device
12/04/2014US20140353566 ReRAM materials stack for low-operating-power and high-density applications
12/02/2014US8902639 Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
12/02/2014US8902634 Resistance change type memory and manufacturing method thereof
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