| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 06/06/2002 | WO2002045167A2 Thin films for magnetic devices |
| 06/06/2002 | WO2002045090A2 Circuit for non-destructive, self-normalizing reading-out of mram memory cells |
| 06/06/2002 | WO2002005268A3 All metal giant magnetoresistive memory |
| 06/06/2002 | US20020068132 Method and apparatus for smoothing thin conductive films by gas cluster ion beam |
| 06/06/2002 | US20020067581 Magnetoresistive device and/or multi-magnetoresistive device |
| 06/06/2002 | US20020067580 Current perpendicular-to-the-plane magnetoresistive spin-value type read heads having a flux guide and common shields and leads |
| 06/06/2002 | US20020067260 Position sensor |
| 06/06/2002 | US20020066177 Method for manufacturing magneto-resistive effect type magnetic heads |
| 06/05/2002 | EP1211517A2 Apparatus and method for measuring hall effect |
| 06/05/2002 | EP1016087B1 Memory location arrangement and its use as a magnetic ram and as an associative memory |
| 06/04/2002 | US6400600 Method of repairing defective tunnel junctions |
| 05/30/2002 | WO2002043164A1 Method for manufacturing magnetoresistance effect device and method for manufacturing magnetoresistance effect magnetic head |
| 05/30/2002 | US20020064595 Robotic transferring device. |
| 05/30/2002 | US20020064594 Cleaning mechanism which, before the magnetic film is formed, cleans either one or both of the film-forming face and reverse face of the substrate. |
| 05/30/2002 | US20020064069 Memory cell configuration and method for fabricating it |
| 05/30/2002 | US20020064067 Semiconductor memory device |
| 05/30/2002 | US20020064005 Spin-valve giant magnetoresistive head and method of manufacturing the same |
| 05/29/2002 | EP1209476A1 Electronic device and manufacturing method thereof |
| 05/29/2002 | DE10056830A1 Integrierte magnetoresistive Halbleiterspeicheranordnung Integrated magnetoresistive semiconductor memory device |
| 05/29/2002 | CN1351251A Pressure sensor based on electric resistance of pickup and pressure measuring method |
| 05/29/2002 | CN1085843C Bridge circuit magnetic field sensor with spin valve magnetoresistive elements and method for its manufacture |
| 05/28/2002 | US6396735 Magnetic memory element, magnetic memory and manufacturing method of magnetic memory |
| 05/28/2002 | US6396671 Ruthenium bias compensation layer for spin valve head and process of manufacturing |
| 05/28/2002 | US6396670 Reducing sensor temperature in magnetoresistive recording heads |
| 05/28/2002 | US6396114 Magneto-electric device |
| 05/28/2002 | US6395595 Multi-layer tunneling device with a graded stoichiometry insulating layer |
| 05/28/2002 | US6395388 Magnetoresistance effect element |
| 05/23/2002 | WO2002041367A2 Self-aligned magnetic clad write line and method thereof |
| 05/23/2002 | WO2002041321A1 Integrated magnetoresistive semiconductor memory system |
| 05/23/2002 | US20020061421 Spin valve device with spin-dependent, specular electronic reflection |
| 05/23/2002 | US20020060563 Electronic device and manufacturing method thereof |
| 05/23/2002 | DE10056159A1 Magneto-resistive random-access memory device uses selection transistors of wide channel width associated with several magnetic tunnel junction memory cells |
| 05/23/2002 | DE10055936A1 Magnetoresistive memory has optimized line shape so that magnetic field components in plane of cell field decrease rapidly with increasing distance from matrix intersection |
| 05/23/2002 | DE10045042C1 MRAM-Modulanordnung MRAM module arrangement |
| 05/22/2002 | EP1207564A2 Magnetoresistive device and/or multiple element magnetoresistive device |
| 05/22/2002 | EP1207538A1 Magnetic Random Access Memory with improved breakdown voltage |
| 05/22/2002 | EP1206763A1 Magnetic sensor |
| 05/22/2002 | EP1206707A1 Hall sensor array for measuring a magnetic field with offset compensation |
| 05/21/2002 | US6392853 Spin valve structure design with laminated free layer |
| 05/21/2002 | US6392281 Ferromagnetic tunnel junction device and method of forming the same |
| 05/21/2002 | US6391431 Spin valve type; manganese and platinum or nickel cuau-i type crystal structure antiferromagnetic; reading magnetic field intensity of magnetic recording mediums |
| 05/16/2002 | WO2002039512A1 Magnetic resistance effect element, magnetic resistance effect type magnetic head, and method of manufacturing the element and the magnetic head |
| 05/16/2002 | WO2002039511A1 Magnetoresistance effect element and magnetoresistance effect type magnetic head |
| 05/16/2002 | WO2002039455A2 Mram arrangement with selection transistors of large channel width |
| 05/16/2002 | WO2002039454A2 Magnetoresistive memory (mram) |
| 05/16/2002 | WO2001071734A3 Multi-layer tunneling device with a graded stoichiometry insulating layer |
| 05/16/2002 | US20020058158 Magneto-resistance effect element magneto-resistance effect memory cell, MRAM, and method for performing information write to or read from the magneto-resistance effect memory cell |
| 05/16/2002 | US20020058148 Magnetic device and solid-state magnetic memory |
| 05/16/2002 | US20020057593 Thin film magnetic memory device having a highly integrated memory array |
| 05/16/2002 | US20020057539 Magnetoresistive head |
| 05/16/2002 | DE10050365A1 MRAM-Anordnung MRAM array |
| 05/16/2002 | DE10041378C1 MRAM-Anordnung MRAM array |
| 05/15/2002 | EP1204976A1 Method and apparatus for reading a magnetoresistive memory |
| 05/15/2002 | EP1204843A1 Device and method for measuring angles |
| 05/15/2002 | CN1349226A Thin film magnet storage device for writing easy-control data into current |
| 05/14/2002 | US6388917 Method for nondestructively reading memory cells of an MRAM memory |
| 05/14/2002 | US6388916 Magnetoelectronic memory element with isolation element |
| 05/14/2002 | US6388847 Specular spin valve with robust pinned layer |
| 05/14/2002 | US6387550 Film comprising ferromagnetic layers formed on substance through nonmagnetic layer; magnetization of one layer is pinned by adjacent coercive force increasing layer, other has free magnetization to change magnetic resistance at low field |
| 05/14/2002 | US6387549 Sensor comprising spin injection layer and spin detection layer of spin-polarized oxide ferromagnetic material and intermediate layer of nonmagnetic conductive oxide which directly contacts and lattice matches other layers |
| 05/14/2002 | US6387548 Exchange coupling film that generates large exchange anisotropic magnetic field at interface with ferromagnetic layer using antiferromagnetic material containing platinum group element and manganese for antiferromagnetic layer |
| 05/10/2002 | WO2001045141A3 Method and apparatus for smoothing thin conductive films by gas cluster ion beam |
| 05/09/2002 | US20020055264 Method for forming photoresist pattern and manufacturing method of magnetoresistive effect thin-film magnetic head |
| 05/09/2002 | US20020055239 Coupling the self-assembly of copolymers, in thin films with subsequent chemical modification to remove one component of the copolymer; magnetic storage media, magnetoresistance devices |
| 05/09/2002 | US20020055190 Magnetic memory with structures that prevent disruptions to magnetization in sense layer |
| 05/09/2002 | US20020055016 Magneto-resistive element |
| 05/09/2002 | US20020054463 Spin-valve magneto-resistive element, magnetic head and magnetic storage apparatus |
| 05/09/2002 | US20020054462 Magnetic tunnel junction device and method including a tunneling barrier layer formed by oxidations of metallic alloys |
| 05/08/2002 | EP1204123A2 Magnetoresistive film |
| 05/08/2002 | EP1204117A1 In-situ pressure sensor based on read head resistance |
| 05/08/2002 | EP1203382A1 Method for producing a magnetic tunnel contact and magnetic tunnel contact |
| 05/08/2002 | CN1348221A Magnetic resistance apparatus and/or multi-magnetic resistance apparatus |
| 05/08/2002 | CN1348190A Method and apparatus for nondestructive magnetic resistance random access storing unit of memory |
| 05/08/2002 | CN1347855A Zinc ferrite material with giant magnetic resistance effect and its prepn |
| 05/07/2002 | US6385083 MRAM device including offset conductors |
| 05/07/2002 | US6385018 Magnetoresistive read head having reduced barkhausen noise |
| 05/07/2002 | US6384600 Magnetic field sensor comprising a spin tunneling junction element |
| 05/07/2002 | US6383626 Ferrite includes oxides of iron, zinc, copper, bismuth, and/or nickel; regions free of copper oxide; silicon substrate; accuracy; bonding strength |
| 05/07/2002 | US6383574 Ion implantation method for fabricating magnetoresistive (MR) sensor element |
| 05/02/2002 | US20020051381 Magnetic random access memory having voltage control circuitry for maintaining sense lines at constant low voltages |
| 05/02/2002 | US20020051380 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system |
| 05/02/2002 | US20020050916 Magnetoresistors |
| 05/02/2002 | US20020050915 Component holder for a hall sensor and process for manufacturing a component holder |
| 05/02/2002 | US20020050840 Circuit configuration and method for accelerating aging in an MRAM |
| 05/02/2002 | US20020050448 Electronic driver circuit for word lines in a memory matrix, and memory apparatus |
| 05/02/2002 | EP1202357A2 Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film |
| 05/02/2002 | EP1202284A2 Prevention method of unwanted programming in a MRAM memory device |
| 05/02/2002 | EP1202283A2 MRAM memory device |
| 05/02/2002 | EP1200972A1 Magnetic field element having a biasing magnetic layer structure |
| 05/01/2002 | CN1347560A Device for weighting cell resistances in magnetoresistive memory |
| 05/01/2002 | CN1347138A Heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor |
| 05/01/2002 | CN1347121A Film magnet memory capable of fast and stable reading data |
| 05/01/2002 | CN1347120A Magnetoresistive random storage device |
| 05/01/2002 | CN1347119A Mram装置 Mram device |
| 05/01/2002 | CN1347118A Method for revising defective tunnel node |
| 04/30/2002 | US6381171 Magnetic element, magnetic read head, magnetic storage device, magnetic memory device |
| 04/30/2002 | US6381170 Ultra high density, non-volatile ferromagnetic random access memory |
| 04/30/2002 | US6381107 Magneto-resistive tunnel junction head having a shield lead rear flux guide |
| 04/30/2002 | US6379747 Thin film forming method and apparatus |
| 04/25/2002 | WO2002033398A1 Leakage magnetism detecting sensor of magnetic penetration apparatus |