Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
02/2000
02/15/2000US6026013 Quantum random address memory
02/10/2000WO2000007191A2 Method to write/read mram arrays
02/10/2000WO2000007184A1 Perishable media information storage mechanism
02/10/2000WO2000007033A1 Method for evaluating signals of magnetoresistive sensors
02/10/2000DE19936378A1 Spin valve magnetoresistive thin film element, for a magnetic head, e.g. for reading hard disks, has a free magnetic layer of specified thickness comprising a nickel-iron alloy film and optionally a cobalt or cobalt alloy film
02/10/2000DE19834153A1 Verfahren zur Auswertung von Signalen magnetoresistiver Sensoren A process for the evaluation of signals of magnetoresistive sensors
02/09/2000CN1244017A Non-volatile magnetic memory unit and component
02/08/2000US6022633 Magnetoresistive effect element and magnetoresistive effect sensor
02/03/2000WO2000005712A1 Reducing sensor temperature in magnetoresistive recording heads
02/03/2000WO1999056074A3 Element comprising a layer structure and a current-directing means
02/03/2000DE19933244A1 Potentiometer with giant magnetoresistance elements; has at least one pair of magnetoresistance elements formed in pairs on substrate and crossed to displace orientation of magnetization axes
02/03/2000DE19933243A1 Coder with at least one pair of giant magnetoresistance elements for magnetic field sensor which indicates very strong resistance alterations with alteration of external magnetic field
02/03/2000DE19933209A1 Magnetic field sensor with several giant magneto resistance effect elements including at least one exchange premagnetizing layer d and fixed magnetic layer with magnetizing direction
02/02/2000EP0829018B1 Magnetizing arrangement for a magneto-resistive thin-film sensor element with a bias layer part
02/01/2000US6021065 Spin dependent tunneling memory
02/01/2000US6020738 Device for magnetizing magnetoresistive thin film-sensor elements in a bridge connection
01/2000
01/27/2000WO2000004592A1 Fabricating an mtj with low areal resistance
01/27/2000WO2000004591A1 Low resistance magnetic tunneling junction
01/27/2000WO2000004552A1 Low switching field magnetic tunneling junction usable for multi-state magnetic memory cell
01/27/2000WO2000004551A1 Mram with shared word and digit lines
01/26/2000EP0885398B1 Magnetic field-sensitive sensor with a thin-film structure and use of the sensor
01/20/2000DE19830344A1 Verfahren zum Einstellen der Magnetisierung der Biasschicht eines magneto-resistiven Sensorelements, demgemäß bearbeitetes Sensorelement oder Sensorelementsystem sowie zur Durchführung des Verfahrens geeignetes Sensorelement und Sensorsubstrat A method of setting the magnetization of the bias layer of a magneto-resistive sensor element, thus machined sensor element or sensor element system and for implementing the process suitable sensor element and the sensor substrate
01/19/2000EP0973169A2 Element exploiting magnetic material and addressing method therefor
01/18/2000US6016269 Quantum random address memory with magnetic readout and/or nano-memory elements
01/18/2000US6016241 Magnetoresistive sensor utilizing a granular magnetoresistive layer
01/13/2000WO2000002266A1 Integrated hall device
01/13/2000WO2000002006A2 Method for regulating the magnetization of the bias layer of a magnetoresistive sensor element, sensor element or sensor element system processed according to said method and sensor element and sensor substrate suitable for the implementation of said method
01/12/2000EP0971424A2 Spin-valve structure and method for making spin-valve structures
01/12/2000EP0971423A1 Spin-valve structure and method for making same
01/12/2000EP0971380A1 Method for manufacturing magnetoresistance element
01/11/2000US6013365 Multi-layer structure and sensor and manufacturing process
01/04/2000US6011674 Magnetoresistance effect multilayer film with ferromagnetic film sublayers of different ferromagnetic material compositions
01/04/2000US6010781 Magnetoresistance effect element, magnetoresistance effect type head and magnetic recording/reproducing apparatus
12/1999
12/29/1999WO1999067828A1 Magnetic tunnel device, method of manufacture thereof, and magnetic head
12/28/1999US6008643 Offset reduction and separation of hall and piezoresistive voltages through current injection
12/28/1999US6006582 Measurement charges in physical properties
12/22/1999EP0759202A4 Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique
12/21/1999US6005798 Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same
12/21/1999US6004617 Combinatorial synthesis of novel materials
12/08/1999EP0962547A1 Improved ion beam sputtering
12/07/1999US5998040 Multilayer which shows magnetoresistive effect and magnetoresistive element using the same
12/07/1999US5998016 Spin valve effect magnetoresistive sensor and magnetic head with the sensor
12/07/1999US5997698 Applied to various magnetic heads including an induction type magnetic head, a magnetoresistance type magnetic head(mr head), and an mr induction type composite head having an induction head portion and an mr head portion.
12/02/1999WO1999062069A1 Magnetoresistive random access memory and method for reading/writing digital information to such a memory
12/02/1999DE19922136A1 Magnetic field detection element to determine rotation of magnetic body.
12/02/1999DE19914223A1 Vorrichtung und zugehöriges Verfahren zum Schützen eines magnetoresistiven Sensors gegen Beschädigung während eines thermischen Unebenheitsereignisses The apparatus and associated method for protecting a magnetoresistive sensor from damage during a thermal asperity event
12/02/1999DE19853659A1 Magnetic field measuring element to measure rpm
12/02/1999DE19823826A1 MRAM-Speicher sowie Verfahren zum Lesen/Schreiben digitaler Information in einen derartigen Speicher MRAM memory, as well as methods for reading / writing digital information in such a memory
12/01/1999EP0731969B1 Magnetic multilayer device including a resonant-tunneling double-barrier structure
12/01/1999CN1236995A Element exploiting magnetic material and addressing method therefor
12/01/1999CN1236826A Dual chamber ion beam sputter deposition system
11/1999
11/30/1999US5994899 Asymmetrical magneto-impedance element having a thin magnetic wire with a spiral magnetic anisotropy
11/25/1999DE19851323A1 Magnetic detector for measuring rotation of IC engine
11/24/1999EP0959146A2 Dual chamber ion beam sputter deposition system
11/24/1999EP0958621A1 Component holder for a hall sensor and process for producing a component holder
11/24/1999EP0958502A2 Magnetic sensor
11/24/1999EP0925585A4 Giant magnetoresistive effect memory cell
11/24/1999EP0896734A4 All-metal, giant magnetoresistive, solid-state component
11/23/1999US5990533 Semiconductor device including a magnetoresistance effect element functioning as a current detector
11/18/1999WO1999058994A1 Magnetic multilayer sensor
11/17/1999EP0957343A1 Rotation detector
11/17/1999CN1235338A Magnetoresistance effect device, magnetoresistance head method for producing magnetoresistance effect device
11/17/1999CN1235276A Semiconductor magnetic resistance current sensor with antimony-indium compounds and method therefor
11/16/1999US5986858 Ferromagnetic tunnel-junction magnetic sensor utilizing a barrier layer having a metal layer carrying an oxide film
11/16/1999US5985356 Screening
11/16/1999US5985162 Method for forming soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)
11/09/1999US5982175 Magnetic sensor with CMOS multivibrator
11/04/1999WO1999056381A1 Vertical hall effect sensor and brushless electric motor with a vertical hall effect sensor
11/04/1999WO1999056074A2 Element comprising a layer structure and a current-directing means
11/04/1999DE19851037A1 Manufacturing magnetic field detector for detecting changes in magnetic field caused by rotation of magnetic material
11/04/1999CA2327467A1 Vertical hall effect sensor and brushless electric motor with a vertical hall effect sensor
11/03/1999EP0954085A1 Vertical hall sensor and brushless electric motor with a vertical hall sensor
11/03/1999EP0953849A2 Spin tunnel magneto-resistance effect type magnetic sensor and production method thereof
11/02/1999US5976713 Exchange-coupling film and, magneto-resistance effect element and magnetic head using thereof
10/1999
10/27/1999EP0733263B1 A magneto-resistive element comprising amorphous permalloy films and method of preparing the same
10/26/1999US5973334 Magnetic device and magnetic sensor using the same
10/26/1999US5973287 Resistance welding method and apparatus used in the method
10/26/1999US5972420 Magnetoresistive sensor manufacturing method
10/21/1999WO1999053499A1 Non-volatile storage latch
10/19/1999US5968676 Magnetoresistance effect film and magnetoresistance effect type head
10/13/1999EP0949694A2 Magnetoresistor with ordered double perovskite structure and method for production thereof
10/13/1999EP0948819A2 Multiple magnetic tunnel structures
10/13/1999EP0809866A4 Magnetoresistive structure with alloy layer
10/12/1999US5966322 Giant magnetoresistive effect memory cell
10/12/1999US5966275 GMR magnetic sensor having an improved sensitivity of magnetic detection
10/12/1999US5966012 Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
10/12/1999US5965283 GMR enhancement in inhomogeneous semiconductors for use in magnetoresistance sensors
10/06/1999CN1230744A Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film
10/05/1999US5962905 Magnetoresistive element
10/05/1999US5961848 Process for producing magnetoresistive transducers
09/1999
09/28/1999US5958611 Film where surface roughness and crystal grain size of oxide antiferromagnetic layer at a side of the pinned ferromagnetic layer are set to specific values; large exchange-coupling magnetic field, magnetoresistance(mr) ratio, mr sensitivity
09/28/1999US5958576 Magnetoresistance effect device and magnetic head
09/23/1999DE19909738A1 Magnetic field sensor e.g. for use as magnetic position sensor for automobile
09/22/1999CN1229196A Sensing device for measuring external magnetic-field direction using magneto-resistance effect sensing device
09/21/1999US5955211 Magnetoresistive film
09/14/1999US5953248 Low switching field magnetic tunneling junction for high density arrays
09/14/1999US5952825 Magnetic field sensing device having integral coils for producing magnetic fields
09/10/1999WO1999045593A1 Three-dimensional device
09/10/1999WO1999045405A1 Magnetic digital signal coupler
09/10/1999WO1999008117A3 Thin-film magnetoresistive magnetic field sensor