Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
07/2003
07/09/2003EP1326255A2 Non-volatile storage latch
07/09/2003EP1326253A2 Nonvolatile storage device and operating method thereof
07/09/2003CN1429342A 磁场传感器 Magnetic field sensors
07/09/2003CN1428876A 磁阻元件 Magnetoresistive element
07/09/2003CN1114110C Device for detecting differential solenvoid magnetic field and method for mfg. thereof
07/08/2003US6590806 Multibit magnetic memory element
07/08/2003US6590750 Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
07/08/2003US6590740 Shielded magnetic head and magnetic reproducing apparatus
07/08/2003US6590389 Magnetic sensor, magnetic sensor apparatus, semiconductor magnetic resistance apparatus, and production method thereof
07/08/2003US6590244 Semiconductor memory device using magneto resistive effect element
07/03/2003WO2003054946A1 A method of improving surface planarity prior to mram bit material deposition
07/03/2003WO2003054886A2 Increased magnetic stability devices suitable for use as sub-micron memories
07/03/2003WO2003054523A2 Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array
07/03/2003US20030123283 Magnetic memory
07/03/2003US20030123282 Thermally-assisted switching of magnetic memory elements
07/03/2003US20030123200 Magnetoresistive element
07/03/2003US20030123199 Semiconductor memory device using tunneling magnetoresistive elements
07/03/2003US20030123198 Multilayer lamination; nonmagnetic gap layer
07/03/2003US20030123197 Magnetoresistive element, method for making the same, and magnetic memory device incorporating the same
07/03/2003US20030122208 Spin valve transistor
07/02/2003EP1324356A1 Magnetoresistive film
07/02/2003EP1324316A2 Magnetoresistive element
07/02/2003EP1324063A2 Magnetoresistive sensor
07/02/2003EP1323166A2 Magnetoresistive trimming of gmr circuits
07/02/2003CN1427416A Magnetic storage device with soft reference layer
07/02/2003CN1427415A Film magnet stroage device for parallel writing of multi-bit data
07/02/2003CN1427396A Magnetic recorder and mfg. method thereof
07/01/2003US6587384 Multi-function serial I/O circuit
07/01/2003US6587371 Memory device having wide margin of data reading operation, for storing data by change in electric resistance value
07/01/2003US6587318 Spin tunnel magneto-resistance effect type magnetic sensor and production method thereof
07/01/2003US6587316 Spin-valve type thin film magnetic element
07/01/2003US6587315 Magnetoresistive-effect device with a magnetic coupling junction
07/01/2003US6586121 Antiferromagnetic layer, layer pinned by exchange coupling magnetic field, nonmagnetic and free magnetic layers and backing of RuPtIrRhPdOsCr alloy; improved rate of resistance change due to relationship between pinned and free layers
06/2003
06/26/2003US20030119210 Method of improving surface planarity prior to MRAM bit material deposition
06/26/2003US20030117866 Recessed magnetic storage element and method of formation
06/26/2003US20030117840 Magnetic memory device having soft reference layer
06/26/2003US20030117839 Thin film magnetic memory device for writing data of a plurality of bits in parallel
06/26/2003US20030117837 Magnetic random access memory and method of operating the same
06/26/2003US20030117836 Writing method for magnetic random access memory using a bipolar junction transistor
06/26/2003US20030117835 Magnetic random access memory
06/26/2003US20030117750 Magnetoresistance effect elements, magnetic heads and magnetic storage apparatus
06/26/2003US20030117254 System and method for using magneto-resistive sensors as dual purpose sensors
06/26/2003US20030117247 Configuration for minimizing the Neel interaction between two ferromagnetic layers on both sides of a non-ferromagnetic separating layer
06/26/2003US20030116847 Magnetic random access memory using schottky diode
06/25/2003EP1321943A2 Magnetic memory
06/25/2003EP0937261B1 Sensor device
06/25/2003CN1426530A Measuring device for contactlessly detecting ferromagnetic object
06/25/2003CN1426066A Thin film magnetic body memory for reading data without base unit
06/25/2003CN1112675C Exchange coupling film and method for producing same, magnetoresistance effect device and magnetoresistance effective head
06/24/2003US6584011 Magnetic random access memory
06/24/2003US6583620 Measuring wide area in short time
06/24/2003US6583003 Method of fabricating 1T1R resistive memory array
06/19/2003WO2003050817A2 Segmented write line architecture
06/19/2003WO2003050545A1 Magnetoresistive speed and direction sensing method and apparatus
06/19/2003US20030112656 Nonvolatile storage device and operating method thereof
06/19/2003US20030112655 Magnetic memory device and manufacturing method thereof
06/19/2003US20030112654 Segmented write line architecture
06/19/2003US20030112007 Multi-layer structure composed of cobalt (Co)/copper (Cu), using a copper electroplating which has good filling capability
06/19/2003US20030111335 Antiferromagnetic layer and a ferromagnetic layer laminate
06/18/2003EP1320104A1 Magnetic memory device and manufacturing method thereof
06/18/2003EP1320102A2 Magnetic random access memory and method of operating the same
06/18/2003EP1319257A2 Magnetic layer system and a component comprising such a layer system
06/18/2003CN2556792Y Tunnel effect magneto-resistance device
06/17/2003US6580636 Magnetoresistive memory with a low current density
06/17/2003US6580587 Quad-layer GMR sandwich
06/17/2003US6580583 Magnetic head with integrated circuit on a rigid body
06/17/2003US6580270 Magnetoresistive sensor or memory elements with decreased magnetic switch field
06/17/2003US6579729 Memory cell configuration and method for fabricating it
06/17/2003US6579728 Fabrication of a high resolution, low profile credit card reader and card reader for transmission of data by sound
06/12/2003WO2003049120A2 Magnetoresistive memory cell comprising a dynamic reference layer
06/12/2003WO2002041367B1 Self-aligned magnetic clad write line and method thereof
06/12/2003US20030107916 Thin film magnetic memory device conducting data read operation without using a reference cell
06/12/2003US20030107915 Magnetic random access memory
06/12/2003US20030107914 Magnetic random access memory
06/12/2003US20030107850 Magnetoresistive-effect device and method for manufacturing the same
06/12/2003US20030107849 Magnetic device using ferromagnetic film, magnetic recording medium using ferromagnetic film, and device using ferroelectric film
06/12/2003US20030107848 Magnetoresistive head
06/12/2003US20030107373 Sensor for measuring a magnetic field and method of regulating said sensor
06/12/2003US20030107057 Tunneling magnetoresistive storage unit
06/12/2003US20030106616 Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film
06/12/2003DE10150955C1 Vertikaler Hall-Sensor Vertical Hall sensor
06/11/2003EP1318523A1 Method of controlling magnetization easy axis in ferromagnetic films using voltage, ultrahigh-density, low power, nonvolatile magnetic memory using the control method and method of writing information on the magnetic memory
06/11/2003EP1072040B1 Non-volatile storage latch
06/11/2003CN1423334A Storage device with storage unit with four states
06/11/2003CN1423281A Magnetic random-access storage device and reading method thereof
06/10/2003US6577529 Multi-bit magnetic memory device
06/10/2003US6577527 Method for preventing unwanted programming in an MRAM configuration
06/10/2003US6577526 Magnetoresistive element and the use thereof as storage element in a storage cell array
06/10/2003US6577477 Hard magnetic bias configuration for GMR
06/10/2003US6577124 Magnetic field sensor with perpendicular axis sensitivity, comprising a giant magnetoresistance material or a spin tunnel junction
06/10/2003US6576969 Magneto-resistive device having soft reference layer
06/05/2003WO2003046594A1 Sensor arrangement
06/05/2003WO2002075782A3 Self-aligned, trenchless magnetoresistive random-access memory (mram) structure with sidewall containment of mram structure
06/05/2003US20030104637 Method for manufacturing quantum dotbased manetic random access memory ( mram)
06/05/2003US20030103393 Magnetic memory device and method for manufacturing the same
06/05/2003US20030103378 Magnetic random access memory
06/05/2003US20030103371 Method of controlling magnetization easy axis in ferromagnetic films using voltage, ultrahigh-density, low power, nonvolatile magnetic memory using the control method, and method of writing information on the magnetic memory
06/05/2003US20030103367 Quantum dot-based magnetic random access memory (mram) and method for manufacturing same
06/05/2003US20030103298 Magnetoresistive-effect device and method for manufacturing the same
06/05/2003US20030102860 Magnetoresistive speed and direction sensing method and apparatus
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