| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 06/13/2000 | US6074743 Magnetoresistance effect element and magnetoresistance device |
| 06/13/2000 | US6074707 Method of producing magnetoresistive element |
| 06/13/2000 | US6074535 Magnetoresistive head, method of fabricating the same and magnetic recording apparatus |
| 06/08/2000 | WO2000033299A1 Shielded magnetoresistive heads with charge clamp |
| 06/08/2000 | WO2000010172A3 Storage cell array and corresponding production method |
| 06/08/2000 | DE19956361A1 Drehwinkelsensor Rotation angle sensor |
| 06/06/2000 | US6072718 Magnetic memory devices having multiple magnetic tunnel junctions therein |
| 06/06/2000 | US6072382 Spin dependent tunneling sensor |
| 06/02/2000 | WO2000031809A1 Magnetoresistive element and utilisation thereof as a storage element in a storage cell array |
| 05/31/2000 | EP1004033A1 Magnetic field sensing device |
| 05/31/2000 | DE19914488C1 Cell resistance evaluation device for magnetoresistive memory |
| 05/31/2000 | CN1254929A Magnetic storage |
| 05/30/2000 | US6069820 Spin dependent conduction device |
| 05/30/2000 | US6069761 Apparatus, and associated method, for protecting a magnetoresistive sensor from damage during a thermal asperity event |
| 05/25/2000 | WO2000030077A1 Differential vgmr sensor |
| 05/25/2000 | WO2000029815A1 Magnetoresistive sensor having interleaved elements |
| 05/25/2000 | WO2000019441A3 Magnetoresistive memory having improved interference immunity |
| 05/25/2000 | WO2000019440A3 Magnetoresistive memory with low current density |
| 05/25/2000 | DE19853447A1 Magnetischer Speicher Magnetic memory |
| 05/24/2000 | EP1003176A2 Magnetic memory |
| 05/24/2000 | EP1003047A2 Magneto-resistance effect element |
| 05/24/2000 | EP1002573A2 The combinatorial synthesis of novel materials |
| 05/24/2000 | EP1002572A2 The combinatorial synthesis of novel materials |
| 05/24/2000 | EP1002236A2 Magnetic field sensor |
| 05/24/2000 | CN2379915Y Antimony-indium series compound semiconductor magnetic resistance type current sensor |
| 05/24/2000 | CA2254460A1 Systems and methods for the combinatorial synthesis of novel materials |
| 05/23/2000 | US6066867 Current control functional device |
| 05/18/2000 | WO2000028342A1 Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor |
| 05/18/2000 | WO2000005712A9 Reducing sensor temperature in magnetoresistive recording heads |
| 05/17/2000 | EP0727086B1 Ultra high density, non-volatile ferromagnetic random access memory |
| 05/16/2000 | US6064083 Hybrid hall effect memory device and method of operation |
| 05/16/2000 | US6063491 Magnetoresistance effects film |
| 05/16/2000 | US6063244 Dual chamber ion beam sputter deposition system |
| 05/11/2000 | WO2000026683A1 Magnetoresistive magnetic field sensor |
| 05/10/2000 | CN2377681Y Operation electrode for electrostatic suspension |
| 05/09/2000 | US6059984 Forming alumina layer; masking; etching |
| 05/04/2000 | WO2000025371A1 Magnetoresistant device and a magnetic sensor comprising the same |
| 05/04/2000 | WO2000025307A1 Structures with improved magnetic characteristics for giant magneto-resistance applications |
| 05/03/2000 | CN1251934A Aluminium oxide film and magnetic memory unit having same |
| 05/02/2000 | US6057049 Exchange coupling film and magnetoresistive element |
| 04/26/2000 | CN1251686A Method for mfg. of mangetoresistance element |
| 04/26/2000 | CN1251459A Magnetoresistance effect type magnetic head and producing method thereof |
| 04/25/2000 | US6055178 Magnetic random access memory with a reference memory array |
| 04/25/2000 | US6054780 Magnetically coupled signal isolator using a Faraday shielded MR or GMR receiving element |
| 04/25/2000 | US6054226 Magnetoresistive element has layer of electroconductive, crystalline magnetostrictive material, dielectric layer of given oxides, and layer of oxide magnetoresistive material; detector having high sensitivity and quick response |
| 04/20/2000 | DE19947983A1 Aluminum oxide film, especially for a magnetic storage device magnetic head or an ink jet print head drive mechanism, contains magnesium oxide, lanthanum oxide and/or yttrium oxide |
| 04/19/2000 | CN1251171A Magnetic current sensor |
| 04/18/2000 | US6052263 Low moment/high coercivity pinned layer for magnetic tunnel junction sensors |
| 04/18/2000 | US6052262 Magneto-resistance effect element and magnetic head |
| 04/18/2000 | US6051304 Alternate layers of ferromagnetic material and nonmagnetic material on a substrate, and the oxygen concentration in the structure is less than 100 wt. ppm. |
| 04/13/2000 | DE19844890A1 Dünnschichtenaufbau eines magnetfeldempfindlichen Sensors mit einem magnetoresistiven Mehrschichtensystem mit Spinabhängigkeit der Elektronenstreuung Thin film structure of a magnetic field sensitive sensor with a magnetoresistive multilayer system with spin dependence of electron scattering |
| 04/12/2000 | EP0993054A2 Thin film magnetic field sensor structure having magneto-resistive multilayer system with spin dependent electron scattering |
| 04/12/2000 | EP0992984A1 Magnetic tunneling element and manufacturing method therefor |
| 04/12/2000 | EP0992281A2 The combinatorial synthesis of novel materials |
| 04/12/2000 | EP0991913A2 Element comprising a layer structure and a current-directing means |
| 04/12/2000 | EP0875000B1 Device for magnetising magnetoresistive thin film sensor elements in a bridge connection |
| 04/11/2000 | US6048632 Thin film of doped mercury cadmium telluride film showinglarge zero field offset; tapes, diskettes, drums |
| 04/06/2000 | WO2000019441A2 Magnetoresistive memory having improved interference immunity |
| 04/06/2000 | WO2000019440A2 Magnetoresistive memory with low current density |
| 04/06/2000 | WO2000019226A1 Quad-layer gmr sandwich |
| 04/06/2000 | DE19830343C1 Artificial antiferromagnetic layer manufacturing method for MR sensor, involves affecting symmetry of antiferromagnetic layer partially by mask to adjust orientation of magnetization of bias layer |
| 04/05/2000 | EP0991078A2 Quantum random address memory with magnetic readout and/or nano-memory elements |
| 04/05/2000 | EP0991076A2 Quantum random address memory |
| 04/05/2000 | EP0990919A2 Magneto-Impedance effect element driving circuit |
| 04/04/2000 | US6045671 Systems and methods for the combinatorial synthesis of novel materials |
| 03/30/2000 | WO2000017863A1 Magnetoresistive devices, giant magnetoresistive devices and methods for making same |
| 03/30/2000 | WO2000017667A1 Magnetoresistive sensor element with selective magnetization direction of the bias layer |
| 03/30/2000 | WO2000017666A1 Magnetoresistive sensor element, especially angular sensor element |
| 03/30/2000 | WO2000017660A1 Electronic component |
| 03/30/2000 | CA2345390A1 Magnetoresistive devices, giant magnetoresistive devices and methods for making same |
| 03/30/2000 | CA2284160A1 Thin-film structure of a magnetic field sensor with a magnetoresistive multilayer system having electron scattering spin dependency |
| 03/23/2000 | DE19843350A1 Electronic magneto-resistive memory cell of Magnetic RAM type has magnetic sensor element in form of AMR or GMR (Giant-Magneto-resistance), enabling more compact data densities to be achieved |
| 03/23/2000 | DE19843349A1 Magneto-resistive sensor element for measurement of external magnetic field angle, especially in bridge circuits, has outer sensor layer comprised partially or completely of individual segments |
| 03/23/2000 | DE19843348A1 Magneto-resistive sensor element for measurement of external magnetic field angle, especially in automotive applications, has device for generating varying magnetic reference field in a reference magnetic layer |
| 03/23/2000 | DE19841498A1 Verfahren zum Herstellen eines Elektronikbauelementes, insbesondere eines Hallsensors A method of manufacturing an electronic component, in particular a Hall sensor |
| 03/22/2000 | EP0987685A2 Magnetic tunneling element and manufacturing method therefor |
| 03/21/2000 | US6040962 Magnetoresistive element with conductive films and magnetic domain films overlapping a central active area |
| 03/16/2000 | WO2000014748A1 Magnetoresistive element and use of same as storage element in a storage system |
| 03/15/2000 | EP0986111A2 Method of manufacturing an electronic component, especially a Hall sensor |
| 03/09/2000 | WO2000013205A2 Sensor for measuring a magnetic field |
| 03/09/2000 | DE19839671A1 Sensor zur Messung eines Magnetfeldes Sensor for measuring a magnetic field |
| 03/09/2000 | CA2341623A1 Sensor for measuring a magnetic field |
| 03/08/2000 | EP0984075A1 Film deposition apparatus or artificial lattice multi-layered film |
| 03/08/2000 | CN1246619A Device for detecting magnetic field of differential solenvoid and method for manufacture thereof |
| 03/07/2000 | US6034887 Non-volatile magnetic memory cell and devices |
| 03/02/2000 | WO2000011664A1 Thin film shielded magnetic read head device |
| 03/01/2000 | CN1245952A Low magnetic moment/high coercivity fixed layer for magnetic tunnel junction sensor |
| 02/29/2000 | US6031692 Magnetoresistive device and magnetoresistive head |
| 02/29/2000 | US6031372 Magnetizing arrangement for a magneto-resistive thin-film sensor element with a bias layer part |
| 02/29/2000 | US6031273 All-metal, giant magnetoresistive, solid-state component |
| 02/24/2000 | WO2000010178A1 Magnetoresistive element and the use thereof as storage element in a storage cell array |
| 02/24/2000 | WO2000010172A2 Storage cell array and corresponding production method |
| 02/24/2000 | WO2000010024A1 Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer |
| 02/24/2000 | WO2000010023A1 Magnetic field sensor comprising a spin tunneling junction element |
| 02/24/2000 | WO2000010022A1 Magnetic field sensor with perpendicular to layer sensitivity, comprising a giant magnetoresistance material or a spin tunnel junction |
| 02/24/2000 | DE19836567A1 Memory cell structure with magneto-resistive memory elements comprises a magnetizable yoke surrounding one of the intersecting lines at a memory element location |
| 02/23/2000 | CN2365675Y Hall assembly using for Hall direct measuring current sensor |
| 02/17/2000 | WO2000008695A1 Magnetic sensor and method for fabricating the same |
| 02/17/2000 | WO2000008650A1 Mram array having a plurality of memory banks |
| 02/16/2000 | EP0979419A2 Magnetic current sensor |