| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 02/21/2001 | CN1284654A Current detecting device |
| 02/20/2001 | US6191581 Planar thin-film magnetic field sensor for determining directional magnetic fields |
| 02/20/2001 | US6191578 Magnetoresistive sensor for high precision measurements of lengths and angles |
| 02/20/2001 | US6191577 Magnetic sensor exhibiting large change in resistance at low external magnetic field |
| 02/14/2001 | EP1076243A2 Magneto-impedance effect element and method of manufacturing the same |
| 02/13/2001 | US6188615 MRAM device including digital sense amplifiers |
| 02/13/2001 | US6188550 Self-longitudinally biased magnetoresistive read transducer |
| 02/08/2001 | WO2001009900A2 High speed latch and flip-flop |
| 02/08/2001 | WO2001009898A1 Method and apparatus for reading a magnetoresistive memory |
| 02/07/2001 | EP1074992A1 Magnetic random access memory device |
| 02/07/2001 | EP1074847A1 Electrical current sensing apparatus |
| 02/07/2001 | CN1282963A Magnetic storage structure possessing improved half selection plentiful quantity |
| 02/06/2001 | US6185143 Magnetic random access memory (MRAM) device including differential sense amplifiers |
| 02/06/2001 | US6185079 Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor |
| 02/06/2001 | US6183890 Magneto-resistance effect device and method of manufacturing the same |
| 02/06/2001 | US6183889 Magneto-impedance element, showing change in impedance in response to external magnetic field when alternating current is applied, comprising glassy alloy having specified composition and temperature region of supercooling liquid zone |
| 02/06/2001 | US6183859 Low resistance MTJ |
| 02/01/2001 | WO2001008176A1 Method of manufacturing a magnetic tunnel junction device |
| 02/01/2001 | WO2001007926A1 Method of manufacturing a magnetic tunnel junction device |
| 01/31/2001 | EP1073071A2 Magnetic multilayer |
| 01/31/2001 | EP1073062A1 Magnetic random access memory device |
| 01/31/2001 | EP1073061A1 Magnetic memory |
| 01/31/2001 | EP1072040A1 Non-volatile storage latch |
| 01/23/2001 | US6178112 Element exploiting magnetic material and addressing method therefor |
| 01/23/2001 | US6178073 Magneto-resistance effect element with a fixing layer formed from a superlattice of at least two different materials and production method of the same |
| 01/23/2001 | US6178071 Spin-valve type thin film element and its manufacturing method |
| 01/23/2001 | US6177204 Ferromagnetic GMR material and method of forming and using |
| 01/18/2001 | WO2001004970A1 Ferromagnetic double quantum well tunnel magneto-resistance device |
| 01/17/2001 | EP1068541A1 Magnetic digital signal coupler |
| 01/16/2001 | US6175525 Non-volatile storage latch |
| 01/16/2001 | US6175515 Vertically integrated magnetic memory |
| 01/16/2001 | US6175296 Potentiometer provided with giant magnetoresistive effect elements |
| 01/16/2001 | US6174736 Method of fabricating ferromagnetic tunnel junction device |
| 01/16/2001 | CA2146318C Position sensing systems including magnetoresistive elements |
| 01/09/2001 | US6172904 Magnetic memory cell with symmetric switching characteristics |
| 01/09/2001 | US6171693 Structures with improved magnetic characteristics for giant magneto-resistance applications |
| 01/02/2001 | US6169689 MTJ stacked cell memory sensing method and apparatus |
| 01/02/2001 | US6169686 Solid-state memory with magnetic storage cells |
| 01/02/2001 | US6169303 Ferromagnetic tunnel junctions with enhanced magneto-resistance |
| 01/02/2001 | US6168860 Magnetic structure with stratified layers |
| 12/28/2000 | WO2000079298A2 Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems |
| 12/28/2000 | WO2000079297A1 Method for manufacturing a magnetic sensor device |
| 12/27/2000 | EP1062667A2 Method to write/read mram arrays |
| 12/26/2000 | US6166539 Magnetoresistance sensor having minimal hysteresis problems |
| 12/26/2000 | US6165803 Magnetic random access memory and fabricating method thereof |
| 12/26/2000 | US6165607 Consisting essentially of mn and at least one kind of r element selected from a group of ni, pd, pt, co, rh, ir, v, nb, ta, cu, ag, au, ru, os, cr, mo, w, and re |
| 12/26/2000 | US6165329 Multilayer magnetic transducer and structure having a high magnetoresistance and process for the production of the structure |
| 12/26/2000 | US6165287 Forming oxide film on surface of ferromagnetic layer with thickness that allows tunneling of electrons; depositing metal layer; forming tunnel oxide film on metal layer by oxidizing surface of metal layer; forming ferromagnetic layer |
| 12/21/2000 | DE10017374A1 Magnetic coupling device using multi-layer magnetic field sensor |
| 12/20/2000 | EP1061592A2 Magneto-resistance effect element, and its use as memory element |
| 12/20/2000 | CN1059756C Method for producing semiconductor thin films and method for producing electromagnetic inverting element |
| 12/19/2000 | US6163477 MRAM device using magnetic field bias to improve reproducibility of memory cell switching |
| 12/19/2000 | US6163437 Magnetic head with spin valve effect magnetoresistive element and its manufacturing method |
| 12/13/2000 | CN1276608A Magnetic spin Co-Cu valve |
| 12/12/2000 | US6160322 Pulse signal generation method and apparatus |
| 12/12/2000 | US6159593 For use in magnetic heads |
| 12/07/2000 | WO2000074154A1 Magnetoresistant device, method for manufacturing the same, and magnetic component |
| 12/06/2000 | EP1058324A1 Magnetoresistant device and a magnetic sensor comprising the same |
| 12/06/2000 | EP1057188A1 Magnetic random access memory with a reference memory array |
| 12/06/2000 | EP1057187A1 Method of fabricating a magnetic random access memory |
| 11/30/2000 | WO2000072387A1 Magnetic coupling device and use thereof |
| 11/30/2000 | WO2000072324A1 Local shielding for memory cells |
| 11/30/2000 | DE19924756A1 Magnetoresistives Element The magnetoresistive element |
| 11/29/2000 | EP1055259A1 Magnetoresistor with tunnel effect and magnetic sensor using same |
| 11/29/2000 | EP1055132A1 Giant magnetoresistive magnetic field sensor |
| 11/28/2000 | US6154349 Magnetoresistive transducer including CoFeZ soft magnetic layer |
| 11/28/2000 | US6154027 Monolithic magnetic sensor having externally adjustable temperature compensation |
| 11/28/2000 | US6153443 Method of fabricating a magnetic random access memory |
| 11/28/2000 | US6153319 Spin-valve type thin film element |
| 11/28/2000 | US6153062 Magnetoresistive sensor and head |
| 11/23/2000 | WO2000070689A1 Magnetic tunnel junction device having an intermediate layer |
| 11/23/2000 | DE10023375A1 Magnetic reading head used in computers contains spin valve sensor with ferromagnetic free layer, ferromagnetic anchored layer structure, and non-magnetic electrically conducting layer |
| 11/22/2000 | EP1054449A2 Magnetic random access memory and fabricating method thereof |
| 11/22/2000 | CN1274475A Magnetic tunnel device, method of mfg. thereof and magnetic head |
| 11/22/2000 | CN1058801C Current blased magnetoresistive spin valve sensor |
| 11/21/2000 | US6150045 Improved micro-track asymmetry and diminishing barkhausen noise by setting the relative angle between magnetization in the track width region of the pinned magnetic layer and magnetization of the free magnetic layer to about 90 degrees |
| 11/16/2000 | WO2000068167A1 Ceramic substrate treatment method and improved thin film magnetic recording head |
| 11/16/2000 | DE19922307A1 Magnetoresistive component has magnetoresistive circuit elements on film bearer, parallel high conductivity conducting layer strips; output is function of squares of input voltage(s) |
| 11/15/2000 | EP1052520A1 Magnetoelectric device |
| 11/15/2000 | EP1051635A1 Magnetoresistive magnetic field sensor |
| 11/15/2000 | CN1273673A Memory cell arrangement |
| 11/14/2000 | US6147922 Non-volatile storage latch |
| 11/14/2000 | US6147843 Magnetic sensor |
| 11/14/2000 | US6146776 Magneto-resistance effect head |
| 11/14/2000 | US6146775 Magnetoresistive film |
| 11/08/2000 | EP1050889A2 Magnetic ferrite film and preparation method |
| 11/07/2000 | US6144524 Spin valve magnetoresistance device and method of designing the same |
| 11/02/2000 | WO2000065614A1 Method for forming magnetoresistance effect film |
| 11/02/2000 | WO2000065578A1 Giant magnetoresistive sensor with pinning layer |
| 11/02/2000 | EP1048026A1 Thin film shielded magnetic read head device |
| 11/02/2000 | DE19954053A1 Magnetic field detector, e.g. for rotational speed detection for internal combustion engine and braking control, has a giant magneto resistive element operating in a magnetic field of below eight-tenths of the saturation magnetic field |
| 10/31/2000 | US6140139 Hall effect ferromagnetic random access memory device and its method of manufacture |
| 10/31/2000 | US6139908 Magnetoresistance device and production method thereof |
| 10/26/2000 | WO2000063715A1 Spin valve sensor with specular electron scattering in free layer |
| 10/26/2000 | WO2000063714A1 GIANT MAGNETORESISTIVE SENSOR WITH A CrMnPt PINNING LAYER AND A NiFeCr SEED LAYER |
| 10/25/2000 | EP1046049A1 Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer |
| 10/25/2000 | EP1046047A1 Magnetoresistive sensor element with selective magnetization direction of the bias layer |
| 10/25/2000 | EP1046046A1 Magnetoresistive sensor element, especially angular sensor element |
| 10/25/2000 | EP1046040A1 Electronic component |
| 10/24/2000 | US6137395 Oxide couble crystal of strontium and iron and rhenium where the rhenium atoms have a degree of alternate arrangement in the range of 20% to 100%; exhibits negative magnetoresistive properties by applying magnetic field |