Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
03/2002
03/14/2002US20020030490 Plane magnetic sensor and plane magnetic sensor for multidimensional magnetic field analysis
03/14/2002US20020030489 Magnetic multilayer structure with improved magnetic field range
03/14/2002US20020029463 Method of manufacturing spin valve film
03/14/2002US20020029462 Magnetoresistive trimming of GMR circuits
03/14/2002DE10043218A1 Schaltungsanordnung und Verfahren zur Alterungsbeschleunigung bei einem MRAM Circuit arrangement and method for accelerating aging in an MRAM
03/14/2002DE10040811A1 Monolithisch integrierbare Induktivität Monolithically integrated inductor
03/14/2002DE10038925A1 Elektronische Treiberschaltung für Wortleitungen einer Speichermatrix und Speichervorrichtung Electronic driver circuit for word lines of a memory array and memory device
03/14/2002DE10034083C1 Halbleiterspeicher mit wahlfreiem Zugeriff mit reduziertem Signalüberkoppeln Semiconductor random Zugeriff with reduced signal overcoupling
03/13/2002EP1187139A1 Information storage device
03/13/2002EP1187137A1 Modular MRAM device
03/13/2002EP1187104A2 A magnetic recording head, a magnetic reproducing head, a magnetic recording apparatus, and a magnetic reproducing apparatus
03/13/2002CN1339826A Single chip integrated inductance
03/13/2002CN1339800A MRAM capable of effectively overcoming noise
03/12/2002US6356477 Cross point memory array including shared devices for blocking sneak path currents
03/07/2002WO2002019442A1 Hall-effect sensor
03/07/2002WO2002019386A2 High density mram cell array
03/07/2002WO2002019338A1 Memory cell arrangement and method for the production thereof
03/07/2002WO2002019337A2 Mtj mram series-parallel architecture
03/07/2002WO2002019336A2 Mtj mram parallel-parallel architecture
03/07/2002WO2002018868A1 Device and method for measuring angles
03/07/2002US20020027803 Magnetic memory device and method of reading data in magnetic memory device
03/07/2002US20020027751 Magnetoresistive effect thin-film magnetic head and manufacturing method of magnetoresistive effect thin-film magnetic head
03/07/2002DE10042006A1 Vorrichtung und Verfahren zur Winkelmessung Apparatus and method for angle measurement
03/07/2002DE10041087A1 Magnetoresistiver Sensor zur Abtastung eines magnetischen Multipolrades A magnetoresistive sensor for sensing a magnetic multipole
03/06/2002EP1184875A2 Circuit and method for accelerating the aging of a MRAM
03/06/2002EP1184871A1 MRAM memory device
03/06/2002EP1184870A1 Electronic driving circuit for memory word lines and memory device
03/06/2002EP1184845A2 Magnetoresistive sensor, magnetoresistive head, and magnetic recording/reproducing apparatus
03/06/2002EP1184844A2 Shielded magnetic head and magnetic reproducing apparatus
03/06/2002EP1183691A1 Local shielding for memory cells
03/06/2002CN1338756A Device for no-loss writing magnetoresistive RAM
03/06/2002CN1338755A Optimum conductive body layout for writing magnet RAM with improved performance
03/05/2002US6353317 Mesoscopic non-magnetic semiconductor magnetoresistive sensors fabricated with island lithography
03/05/2002US6352621 Method of manufacturing film laminate having exchange anisotropic magnetic field
02/2002
02/28/2002WO2002017409A2 Method of fabricating thermally stable mtj cell and apparatus
02/28/2002WO2002016878A1 Magneto-resistive sensor for scanning a magnetic multipole wheel
02/28/2002US20020024875 Current driver configuration for MRAM
02/28/2002US20020024842 All metal giant magnetoresistive memory
02/28/2002US20020024781 Spin-valve type thin film magnetic element
02/28/2002US20020024779 Thin-film magnetic head with magnetoresistive effect element
02/28/2002US20020024777 Magnetic recording head, a magnetic reproducing head, a magnetic recording apparatus, and a magnetic reproducing apparatus
02/28/2002US20020024775 Spin valve thin film magnetic element and method of manufacturing the same
02/28/2002DE10107491A1 Magnetsensoren und Verfahren zur Herstellung derselben Magnetic sensors and methods for manufacturing the same
02/27/2002EP1182713A2 Magneto-resistive element
02/27/2002EP1182666A1 Integrated memory with magnetoresistive memory cells
02/27/2002EP1182665A2 MRAM with an effective noise countermeasure
02/27/2002EP1181693A1 Magnetic device with a coupling layer and method of manufacturing and operation of such device
02/27/2002EP1181261A1 Ceramic substrate treatment method and improved thin film magnetic recording head
02/27/2002CN1337716A Magnetic-resistance random access storage device
02/27/2002CN1337714A Integrated storage with storage unit having magnetic-resistance storage effect
02/27/2002CN1337713A Stable magnetic-resistance storage element with magnetic force
02/27/2002CN1337711A Integrated storage with storage unit having magnetic-resistance storage effect and its operation method
02/27/2002CN1337708A Electric current driving device and magnetic-resistance storage
02/27/2002CN1337673A Magnetic-tunnel-effect type magnetic head and its producing method thereof
02/27/2002CN1337672A Magnetic-tunnel effect type magnetic head and recorder/player
02/26/2002US6351410 Ferromagnetic tunnel junction random access memory, spin valve random access memory, single ferromagnetic layer random access memory, and memory cell array using the same
02/26/2002US6351409 MRAM write apparatus and method
02/26/2002US6351408 Memory cell configuration
02/21/2002US20020021543 Configuration and method for the low-loss writing of an MRAM
02/21/2002US20020021537 Exchange coupling film and magnetoresistive element using the same
02/21/2002US20020021536 Magnetic tunnel effect type magnetic head, and recorder/player
02/21/2002US20020020865 MRAM with an effective noise countermeasure
02/21/2002US20020020864 Memory cell cofiguration and production method
02/21/2002DE10037976A1 Anordnung zum verlustarmen Schreiben eines MRAMs Arrangement for low-loss writing an MRAM
02/20/2002EP1180804A2 Hall-effect magnetoelectric converter
02/20/2002EP1180770A1 MRAM memory
02/20/2002CN1336636A Large magneto-resistive sensor having reverse parallel coupling and low HK freedom layer
02/19/2002US6349054 Thin film magnetic memory device including memory cells having a magnetic tunnel junction
02/19/2002US6349053 Spin dependent tunneling memory
02/14/2002US20020018919 Manganese alloy
02/14/2002US20020018361 Method for nondestructively reading memory cells of an mram memory
02/14/2002US20020018360 Integrated memory having memory cells with a magnetoresistive storage effect
02/14/2002US20020018325 Magnetoresistance effect elements, magnetic heads and magnetic storage apparatus
02/14/2002US20020018316 Shielded magnetic head and magnetic reproducing apparatus
02/14/2002US20020017568 Fabrication of a high resolution, low profile credit card reader and card reader for transmission of data by sound
02/14/2002US20020017247 Depositing a first layer of metal, irradiating, analyzing an x-ray spectrum of x-rays leaving said irradiated area of said first layer of metal to determine a thickness; alarm if thickness of layer exceeds a preselected value
02/14/2002US20020017018 Manufacturing method of magneto-resistive effect type head
02/13/2002CN1335625A Storage cell with magnetic resistance storage effect for integrated memory
02/13/2002CN1335515A Plane magnetic sensor and plane magnetic sensor using for multidimensional magnetic field analysis
02/12/2002US6347049 Low resistance magnetic tunnel junction device with bilayer or multilayer tunnel barrier
02/12/2002US6346290 Organic polymer on substrate, delivering an initiator, polymerization and screening
02/07/2002US20020016048 Method for manufacturing semiconductor thin film, and magnetoelectric conversion element provided with semiconductor thin film thereby manufactured
02/07/2002US20020015267 Thin-film magnetic head having magnetic resistance effect element
02/07/2002US20020014667 Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
02/07/2002DE10034868A1 MRAM-Speicherzelle MRAM memory cell
02/07/2002DE10031401A1 Dreitorbauelement, insbesondere Spininjektionstransistor Dreitorbauelement, in particular spin injection transistor
02/06/2002EP1178490A1 Low loss writing device for a MRAM
02/06/2002CN1334567A MRAM memory unit
02/06/2002CN1334234A Method of horizontal growth of carbon nanotube and field effect transistor using carbon nanotube
02/05/2002US6344954 Magneto-resistive tunnel junction head with specific flux guide structure
02/05/2002US6344952 Serpentine resistive shunt for MR heads having conductive shields
01/2002
01/31/2002WO2002009158A2 Semiconductor structure including a magnetic tunnel junction
01/31/2002WO2002009151A2 Magnetoresistive structure
01/31/2002WO2002009126A2 Spin valve structure
01/31/2002WO2001075891A3 Current conveyor and method for readout of mtj memories
01/31/2002WO2001070873A3 Nanocylinder arrays
01/31/2002US20020012812 Controlling electrical resistance; multilayer laminate
01/31/2002US20020012269 MRAM architectures for increased write selectivity
01/31/2002US20020012268 MRAM architectures for increased write selectivity
01/31/2002US20020012267 Non-volatile memory device