Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
06/2003
06/05/2003DE19942447C2 Speicherzellenanordnung und Verfahren zu deren Betrieb Memory cell arrangement and method of operation
06/04/2003EP1316106A2 High density mram cell array
06/04/2003EP1316091A2 Mtj mram parallel-parallel architecture
06/04/2003CN1421941A Fe-C film material with room temperature positive giant magnetoresistive effect and prepared via PLD process
06/04/2003CN1421865A Magnetic random access storage device
06/03/2003US6574138 Memory cell configuration and method for operating the configuration
06/03/2003US6574129 Resistive cross point memory cell arrays having a cross-couple latch sense amplifier
06/03/2003US6574080 Thin film head with transverse biasing layers
06/03/2003US6574079 Magnetic tunnel junction device and method including a tunneling barrier layer formed by oxidations of metallic alloys
06/03/2003US6573713 Transpinnor-based switch and applications
06/03/2003US6573586 Semiconductor device
06/03/2003US6572917 Manufacturing method of magnetic memory device
05/2003
05/30/2003WO2003044800A2 Asymmetric mram cell and bit design for improving bit yield
05/30/2003WO2002084706A3 Integrated magnetoresistive semiconductor memory arrangement
05/30/2003WO2002045167A3 Thin films for magnetic devices
05/29/2003US20030099814 Castellation technique for improved lift-off of photoresist in thin-film device processing and a thin-film device made thereby
05/29/2003US20030099771 Spin filter bottom spin valve head with continuous spacer exchange bias
05/28/2003EP1315170A2 Multibit memory device
05/28/2003EP1314211A1 Hall-effect sensor
05/28/2003EP1314165A1 Memory cell arrangement and method for the production thereof
05/28/2003EP1314003A1 Magneto-resistive sensor for scanning a magnetic multipole wheel
05/28/2003EP1222662B1 Polyvalent, magnetoresistive write/read memory and method for writing and reading a memory of this type
05/27/2003US6570783 Asymmetric MRAM cell and bit design for improving bit yield
05/27/2003US6570745 Lead overlaid type of sensor with sensor passive regions pinned
05/27/2003US6570744 Magnetoresistance effect film and device
05/27/2003US6570380 Non-linear hall IC
05/27/2003US6569745 Shared bit line cross point memory array
05/22/2003WO2003043036A1 Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device
05/22/2003WO2003043019A1 Cladding field enhancement of an mram device
05/22/2003WO2003043018A1 Magnetoresistance random access memory for improved scalability
05/22/2003WO2003043017A2 Magnetic device with magnetic tunnel junction, memory array and read/write methods using same
05/22/2003WO2003019564A3 Magnetoresistive level generator
05/22/2003WO2002095433A3 Device for measuring a b-component of a magnetic field, a magnetic field sensor and an ammeter
05/22/2003US20030096057 Spin filter bottom spin valve head with continuous spacer exchange bias
05/22/2003US20030095363 Spin filter bottom spin valve head with continuous spacer exchange bias
05/22/2003US20030095362 Magnetoresistive-effect device and method for manufacturing the same
05/22/2003US20030094944 Magnetic sensor
05/22/2003US20030094943 Magnetic field measurement sensitivity of the sensor can be made insensitive to sensor temperature thereby improving measurement accuracy.
05/21/2003EP1147520B1 Vertically integrated magnetic memory
05/21/2003CN1419242A Film magnet memory information programming method
05/21/2003CN1419241A Film magnet memory making data write by bidirection data writing in magnetic field
05/21/2003CN1419232A Magnetoresistor device, read/write head having same and driver
05/21/2003CN1109330C Low magnetic moment/high coercivity fixed layer for magnetic tunnel junction sensor
05/20/2003US6567299 Magnetic memory device and magnetic substrate
05/20/2003US6567246 Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element
05/15/2003US20030091864 Lamination comprising oxide layer, magnetoresistive head using the same, and magnetic recording and reproducing device
05/15/2003US20030090935 Thin film magnetic memory device for programming required information with an element similar to a memory cell and information programming method
05/15/2003US20030090934 Magnetic random access memory
05/15/2003US20030090933 Thin-film magnetic memory device executing data writing with data write magnetic fields in two direction
05/15/2003US20030090932 Asymmetric mram cell and bit design for improving bit yield
05/15/2003US20030090930 A conductive line for programming a magnetoresistive random access memory device; enhancing the magnetic field for programming semiconductor random access memory
05/15/2003US20030090844 Magnetoresistive device, read head having the same, and drive
05/14/2003EP1311008A1 Magnetoresistance effect device and magnetoresistance effect head comprising the same, and magnetic recording/reproducing apparatus
05/14/2003EP1310962A1 Magnetic memory cell
05/14/2003EP1310944A2 Giant magnetoresistive transducer
05/14/2003CN1418381A Magnetoresistance effect device and magnetoresistance effeet magnetic head
05/14/2003CN1417872A 磁传感器 Magnetic sensors
05/14/2003CN1417774A Magnetoresistance sensor and its making process
05/13/2003US6563682 Magneto resistive element
05/13/2003US6563681 Magnetoresistance effect film and magnetoresistance effect type head
05/13/2003US6563679 Current perpendicular-to-the-plane magnetoresistance read heads with transverse magnetic bias
05/13/2003US6563678 Thin-film magnetic head having insolating layer provided between gap layer and shielding layer
05/13/2003US6563313 Electronic device and manufacturing method thereof
05/13/2003US6562486 Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film
05/13/2003US6562199 For reading a magnetic field intensity of a magnetic recording medium or the like as a signal; vacuum cooling chamber; lamination
05/08/2003WO2003038864A2 Magneto-resistive bit structure and method of manufacturing therefor
05/08/2003US20030087130 Magnetic recording media; masking, etching photoresist pattern
05/08/2003US20030086321 Methods of increasing write selectivity in an MRAM
05/08/2003US20030086216 Magneto-resistive device, and magnetic head and head suspension assembly using same
05/08/2003US20030085699 Rotation sensor
05/08/2003US20030085413 Magnetic memory cell
05/07/2003EP1308741A1 Magnestoresistive sensor and manufacturing method therefor
05/07/2003EP1307756A1 Low power magnetic anomaly sensor
05/06/2003US6560135 Magnetic semiconductor memory apparatus and method of manufacturing the same
05/06/2003US6559511 Narrow gap cladding field enhancement for low power programming of a MRAM device
05/06/2003US6559480 Semiconductor device such as a hall-effect sensor or solar cell barrier layer for controlling current flow to substrate
05/02/2003EP1306850A2 Tunnel junction memory cell
05/02/2003EP1306687A2 Magnetic sensor
05/02/2003EP1305795A2 All metal giant magnetoresistive memory
05/01/2003WO2003036734A2 Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method
05/01/2003WO2003036733A2 Vertical hall sensor
05/01/2003WO2003036732A2 Compact vertical hall sensor
05/01/2003WO2003036726A1 Information storage device and manufacturing method thereof
05/01/2003WO2003036725A1 Magnetic memory device
05/01/2003WO2003007304A3 Magnetic memory unit and magnetic memory array
05/01/2003WO2002084705A3 Method for operating an mram semiconductor memory arrangement
05/01/2003WO2002041367A3 Self-aligned magnetic clad write line and method thereof
05/01/2003US20030082484 Method of manufacturing magnetoresistive device, method of manufacturing thin film magnetic head, and method of forming thin film pattern
05/01/2003US20030081467 Magnetic memory using perpendicular magnetization film
05/01/2003US20030081462 Magneto-resistive bit structure and method of manufacture therefor
05/01/2003US20030081454 Memory cell, memory circuit block, data writing method and data reading method
05/01/2003US20030081450 Thin film magnetic memory device for conducting data write operation by application of a magnetic field
05/01/2003US20030080391 Magnetic memory device and manufacturing method thereof
05/01/2003US20030080084 Method of forming patterned thin film and method of fabricating micro device
04/2003
04/30/2003CN1414560A Film magnetic storing device for writing data by magetic field exerting
04/30/2003CN1414559A Storage device which-storage cell having series magnetic tunnel junction and tunnel junction
04/29/2003US6556473 Magnetic memory with reduced write current
04/29/2003US6556390 Spin valve sensors with an oxide layer utilizing electron specular scattering effect
04/29/2003US6556388 Differential VGMR sensor
04/29/2003US6555889 Magnetoresistive device and magnetic component
1 ... 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 ... 121