Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
04/2003
04/29/2003US6555858 Self-aligned magnetic clad write line and its method of formation
04/24/2003WO2003034496A1 Information recorder and electronic apparatus with mounted information recorder
04/24/2003WO2003033687A2 Lift-off process for a hard etch mask for magnetic memory cells in mram devices
04/24/2003WO2002097464A3 Compensating a sensor for measuring a magnetic field
04/24/2003WO2002054389A3 Enhanced free layer for a spin valve sensor in a magnetic read head
04/24/2003US20030076708 Thin film magnetic memory device including memory cells having a magnetic tunnel junction
04/24/2003US20030076707 Single transistor type magnetic random access memory device and method of operating and manufacturing the same
04/24/2003US20030076703 Magnetic random access memory
04/24/2003US20030076635 Magnetoresistive effect head
04/23/2003EP1304738A2 Single transistor type magnetic random access memory device and method of operating and manufacturing the same
04/23/2003EP1304737A2 Magnetic memory and method of its manufacture
04/23/2003EP1304550A1 Rotation angle sensor capable of accurately detecting rotation
04/23/2003CN1412863A Method for modifying magnetic tunnel junction conversion characteristics
04/23/2003CN1412847A Single transistor type magnetic random access memory and its operating and mfg. method
04/23/2003CN1106635C 磁电阻效应元件 Magnetoresistance effect element
04/22/2003US6552927 MRAM architecture and system
04/22/2003US6552926 Magnetic random-access memory
04/22/2003US6551852 Method of forming a recessed magnetic storage element
04/17/2003WO2003032338A1 Spin-valve magnetoresistive device with enhanced performance
04/17/2003WO2003032337A1 Method of preparing polymer composite using unidirectionally solidified giant magnetostrictive material
04/17/2003WO2002099451A3 Semimanufacture for a sensor for measuring a magnetic field
04/17/2003US20030073253 Magnetic memory and method of its manufacture
04/17/2003US20030073251 Plate-through hard mask for MRAM devices
04/17/2003US20030072111 Magnetic sensor having free magnetic layer of multi-layered ferri-structure
04/17/2003US20030070497 Rotation angle sensor capable of accurately detecting rotation angle
04/16/2003EP1301928A2 Mram architectures for increased write selectivity
04/16/2003EP1131606B1 Magnetoresistive sensor having interleaved elements
04/16/2003CN1411074A Shared bit line cross point storage array
04/16/2003CN1411000A Film magnetic storage of shared storage element between multiple storage locations
04/15/2003US6548849 Magnetic yoke structures in MRAM devices to reduce programming power consumption and a method to make the same
04/10/2003US20030068897 Methods of making magnetoresistive memory devices
04/10/2003US20030067802 Method for modifying switching field characteristics of magnetic tunnel junctions
04/10/2003US20030067800 Magnetoresistive element and nonvolatile solid-state memory using the same
04/09/2003EP1300853A1 Method for modifying switching field characteristics of magnetic tunnel junctions
04/09/2003EP1105878B1 Memory cell array and corresponding production method
04/09/2003CN1409416A Perovskite rare earth manganese oxide giant magnetic resistance material, preparing process and its use
04/09/2003CN1409321A Reading method for magnet resistance device with soft reference layer
04/09/2003CN1409320A Magnetoresistance device of soft reference layer containing embedded conductor
04/09/2003CN1409297A Magnetic resistant element deposited with oxide magnetic layer and metal magnetic film
04/08/2003US6545900 MRAM module configuration
04/08/2003US6545457 Current detector utilizing hall effect
04/08/2003US6544801 Method of fabricating thermally stable MTJ cell and apparatus
04/03/2003WO2002095423A3 Device for measuring a b-component of a magnetic field, a magnetic field sensor and an ammeter
04/03/2003US20030063491 Magneto resistive film, method of manufacturing magnetoresistive film, and memory using magnetoresistive film
04/03/2003US20030063416 Magnetic sensing element having specular layer
04/03/2003US20030063415 Exchange coupling film having improved wettability of seed layer
04/03/2003US20030062981 Magnetoresistance effect element and magnetoresistance effect type magnetic head
04/03/2003US20030062975 Magnetoresistive effect element, magnetic memory and magnetic head
04/03/2003US20030062580 Spin-valve transistor
04/02/2003EP1298669A2 Magnetic memory device
04/02/2003EP1297533A1 Magnetic memory
04/01/2003US6542402 Thin film magnetic memory device capable of easily controlling a data write current
04/01/2003US6542398 Magnetic random access memory
04/01/2003US6542068 Vertical hall effect sensor and a brushless electric motor having a vertical hall effect sensor
03/2003
03/27/2003WO2003026131A2 Standard cell arrangement for a magneto-resistive component
03/27/2003WO2003025946A1 Magnetic memory with write inhibit selection and the writing method for same
03/27/2003WO2003025945A2 Compensation of a bias magnetic field in a storage surface of a magnetoresistive storage cell
03/27/2003WO2003025943A1 Magnetic memory device and its recording control method
03/27/2003WO2003025942A2 Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same
03/27/2003WO2003025604A1 Circuit configuration for a gradiometric current sensor and a sensor chip equipped with this circuit configuration
03/27/2003US20030059588 Electron spin mechanisms for inducing magnetic-polarization reversal
03/27/2003US20030058686 Thin film magnetic memory device sharing an access element by a plurality of memory cells
03/27/2003US20030058685 Read methods for magneto-resistive device having soft reference layer
03/27/2003US20030058684 Magneto-resistive device having soft reference layer
03/27/2003US20030058587 Magnetic sensing element defining narrow track width and process for manufacturing the same
03/27/2003US20030058585 Thin film magnetic head, magnetic head device and magnetic recording/reproducing device
03/27/2003US20030057461 Magneto-resistive device including soft synthetic ferrimagnet reference layer
03/27/2003US20030057423 Three-dimensional device
03/26/2003EP1296332A2 Magnetic memory device
03/26/2003EP1296331A2 Method of performing MRAM read operation
03/26/2003CN1406394A Production method for spin valve film and production method of magnetoresistance effect type magnetic head
03/26/2003CN1405777A Multiple-location storage unit
03/26/2003CN1405754A Magnetic sensor and magnetic head using magnetic resistance effect, producing method and magnetic reproducing device thereof
03/25/2003US6538920 Cladded read conductor for a pinned-on-the-fly soft reference layer
03/25/2003US6538917 Read methods for magneto-resistive device having soft reference layer
03/25/2003US6538859 Giant magnetoresistive sensor with an AP-coupled low Hk free layer
03/25/2003US6538437 Low power magnetic anomaly sensor
03/25/2003US6538297 Magneto-resistive device and magneto-resistive effect type storage device
03/20/2003WO2003023431A1 Method and system for improving the efficiency of the set and offset straps on a magnetic sensor
03/20/2003US20030053331 Magnetoresistive level generator and method
03/20/2003US20030053269 CPP magnetic sensing element and method for making the same
03/20/2003US20030053267 Synthetic anti-parallel spin valve with thin AFM thickness for very high density application and process to manufacture it
03/20/2003US20030053266 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads
03/20/2003US20030052671 Magnetic detection element utilizing magneto-impedance effect, production method of the element, and portable equipment using the element
03/19/2003EP1293792A2 Magnetic detection element utilizing magneto-impedance effect, production method of the element, and portable equipment using the element
03/19/2003EP0909340B1 Multilayered material, process and device for producing a multilayered material
03/19/2003CN1404631A Method for manufacturing magnetoresistance effect device and method for manufacturing magnetoresistance effect magnetic head
03/18/2003US6535364 Magnetic resistance element having four magnetization states and a magnetic device using the same
03/18/2003US6535362 Magnetoresistive device having a highly smooth metal reflective layer
03/18/2003US6534978 Electronic component
03/18/2003US6534326 Method of minimizing leakage current and improving breakdown voltage of polycrystalline memory thin films
03/13/2003WO2003021579A1 Magnetic material structures, devices and methods
03/13/2003WO2003021283A1 A three dimensional strap for a magnetoresistive sensor
03/13/2003WO2002023638A3 An optically addressed spin-polarised diode
03/13/2003US20030049389 Multilayer; buffer, antiferromagnetic layer, magnetic layer,nonmagnetic conductor and protective coatings
03/13/2003US20030048658 Magnetic element with an improved magnetoresistance ratio and fabricating method thereof
03/13/2003US20030048582 Soft magnetic film and thin film magnetic head using soft magnetic film, process for manufacturing soft magnetic film and process for manufacturing thin film magnetic head
03/12/2003EP1292029A2 Magnetic switch capable of instantaneous switching of an output signal and magnetic sensor
03/12/2003CN1402254A Thin film magnetic storage device with storage unit contg. magnetic tunnel node
03/12/2003CN1402253A Thin film magnet storage device capable of high-speed reading data and working stably
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