| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
|---|
| 01/31/2002 | US20020012266 Random access semiconductor memory with reduced signal overcoupling |
| 01/31/2002 | US20020012206 Thin film conductor layer, magnetoresistive element using the same and method of producing thin film conductor layer |
| 01/31/2002 | US20020011841 Hall-effect magnetoelectric converter |
| 01/30/2002 | EP1176605A2 Integrated memory with magnetoresistive memory cells |
| 01/30/2002 | EP1176600A1 Method and device for noiselesss reading of memory cells of a MRAM memory |
| 01/30/2002 | CN1333538A Arbitrary selective access semiconductor memor capable of reducing signal overcoupling |
| 01/30/2002 | CN1333534A Spin valve and making method thereof |
| 01/29/2002 | US6342713 Method of operating a magnetoelectronic device |
| 01/24/2002 | WO2002007166A2 Mram architectures for increased write selectivity |
| 01/24/2002 | WO2002006845A1 Magnetoresistive angle sensor having several sensing elements |
| 01/24/2002 | US20020009840 High density giant magnetoresistive memory cell |
| 01/24/2002 | US20020008989 MRAM memory cell |
| 01/24/2002 | US20020008988 Magnetic memory |
| 01/24/2002 | US20020008987 Magnetic random access memory |
| 01/24/2002 | US20020008948 Magnetic transducer and thin film magnetic head |
| 01/24/2002 | US20020008947 Echange coupling film and magnetoresistive element using the same |
| 01/24/2002 | US20020008946 Magnetoresistive film, magnetoresistive head, and information regeneration apparatus |
| 01/24/2002 | US20020008016 Shields |
| 01/24/2002 | US20020007550 Magneto-resistive element production method |
| 01/24/2002 | DE10033486A1 Integrated memory (MRAM), whose memory cells contain magnetoresistive memory effect |
| 01/24/2002 | DE10032277A1 MRAM-Anordnung MRAM array |
| 01/24/2002 | DE10032275A1 Integrierter Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt und Verfahren zum Betrieb eines solchen Speichers Integrated memory having memory cells with magnetoresistive storage effect and methods of operation of such a memory |
| 01/24/2002 | DE10032272A1 Strom-Treiberanordnung für MRAM Current driver configuration for MRAM |
| 01/24/2002 | DE10032271A1 MRAM-Anordnung MRAM array |
| 01/23/2002 | EP1174925A2 Write conductor layout for magnetic memory |
| 01/23/2002 | EP1174924A2 MRAM-cell |
| 01/23/2002 | EP1174882A1 MRAM memory device |
| 01/23/2002 | EP1174724A2 Plane magnetic sensor |
| 01/22/2002 | US6341084 Magnetic random access memory circuit |
| 01/22/2002 | US6341080 Hall effect ferromagnetic random access memory device and its method of manufacture |
| 01/22/2002 | US6341053 Magnetic tunnel junction elements and their fabrication method |
| 01/22/2002 | US6340886 Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface |
| 01/22/2002 | US6340533 Spin-valve magnetoresistance sensor and thin film magnetic head |
| 01/22/2002 | US6340520 Giant magnetoresistive material film, method of producing the same magnetic head using the same |
| 01/17/2002 | WO2002005470A2 Magnetoresistive trimming of gmr circuits |
| 01/17/2002 | WO2002005318A2 High density giant magnetoresistive memory cell |
| 01/17/2002 | WO2002005286A1 Magnetic memory |
| 01/17/2002 | WO2002005268A2 All metal giant magnetoresistive memory |
| 01/17/2002 | WO2002004969A1 Low power magnetic anomaly sensor |
| 01/17/2002 | US20020006530 Antiferromagnetic layer, layer pinned by exchange coupling magnetic field, nonmagnetic and free magnetic layers and backing of RuPtIrRhPdOsCr alloy; improved rate of resistance change due to relationship between pinned and free layers |
| 01/17/2002 | US20020006529 Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film |
| 01/17/2002 | US20020006020 Tunneling magnetoresistive element and method of manufacturing the same |
| 01/17/2002 | US20020006019 Magnetoresistive film, magnetoresistive head and information regeneration apparatus |
| 01/17/2002 | US20020006017 Magnetoresistive angle sensor having several sensing elements |
| 01/17/2002 | US20020005717 Low power magnetic anomaly sensor |
| 01/17/2002 | DE10030234A1 Integrierter Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt Integrated memory having memory cells with a magnetoresistive memory effect |
| 01/16/2002 | EP1172854A2 Semiconductor memory with random access |
| 01/15/2002 | US6339330 Magnetic head |
| 01/15/2002 | US6339329 Method for manufacturing a giant resistive ratio (GMR) bridge detector and a magnetoresistive bridge detector |
| 01/10/2002 | WO2002003481A1 Three-port component |
| 01/10/2002 | US20020004147 Multilayer; ferromagnetic and nonmagnetic spacer stacks; reflector backings |
| 01/10/2002 | US20020003727 Integrated memory having memory cells with magnetoresistive memory effect |
| 01/10/2002 | US20020003721 Solid-state memory with magnetic storage cells |
| 01/10/2002 | US20020003720 MRAM configuration |
| 01/10/2002 | US20020003685 Magnetoresistive sensor including magnetic domain control layers having high electric resistivity, magnetic head and magnetic disk apparatus |
| 01/10/2002 | US20020003684 Magnetic tunnel effect type magnetic head, and method of produciing same |
| 01/09/2002 | EP1170750A1 Current driver for MRAM |
| 01/09/2002 | CN1330391A Manufacturing method for semiconductor film and magnetoelectric conversion element using the film |
| 01/03/2002 | US20020001243 Mram configuration |
| 01/03/2002 | US20020001224 Integrated memory having memory cells with a magnetoresistive storage property and method of operating such a memory |
| 01/03/2002 | US20020001223 Solid-state magnetic memory |
| 01/03/2002 | US20020000597 Nonvolatile semiconductor memory device and method for recording information |
| 01/03/2002 | US20020000575 Spin-valve transistor |
| 01/02/2002 | EP1168466A2 Method for manufacturing semiconductors thin film, and magnetoelectric conversion element provided with semiconductor thin film thereby manufactured |
| 01/02/2002 | EP1168354A1 Magnetoresistive memory element |
| 01/02/2002 | EP1166275A1 Device for weighting the cell resistances in a magnetoresistive memory |
| 01/02/2002 | CN1329742A Seed layer for nickel xide pinning layer for increasing magnetoresistance of spin valve sensor |
| 01/02/2002 | CN1329741A Shield magnetoresistive heads with charge clamp |
| 01/02/2002 | CN1329336A Writing-in circuit of magnetic RAM large array |
| 01/01/2002 | US6335675 Semiconductor magnetoresistance device, making method and magnetic sensor |
| 01/01/2002 | US6335578 Brushless DC motor |
| 01/01/2002 | US6335081 Tunnel magnetoresistance effect element |
| 12/27/2001 | WO2001099206A1 Magnetoresistance effect device and magnetoresistance effect head comprising the same, and magnetic recording/reproducing apparatus |
| 12/27/2001 | WO2001099099A2 Magnetic multilayer structure with improved magnetic field range |
| 12/27/2001 | US20010055775 Generating preferential layouts; mix particles, allow particle to form layout, recover layout |
| 12/27/2001 | US20010055669 Magnetoresistive cobalt oxide mixture |
| 12/27/2001 | US20010055185 Spin-valve thin-film magnetic element and method for fabricating the same |
| 12/20/2001 | US20010053053 Exchange coupling film and electroresistive sensor using the same |
| 12/20/2001 | US20010053052 Magnetic sensor |
| 12/20/2001 | US20010053043 Method for manufacturing a magnetroresistive element with conductive films and magnetic domain films overlapping a central active area |
| 12/20/2001 | DE10120295A1 Vapor deposition apparatus for producing stacked layer structure, includes first and second run lines, vent lines, and line-switching mechanism |
| 12/20/2001 | DE10036140C1 Non-destructive read-out of MRAM memory cells involves normalizing actual cell resistance, comparing normalized and normal resistance values, detecting content from the result |
| 12/19/2001 | EP1163676A1 Storage cell array and method for the production thereof |
| 12/19/2001 | CN1327577A Magnetic recording device, method for adjusting magnetic head and magnetic recording medium |
| 12/19/2001 | CN1327268A Hall effect sensitive element with integrated capacitor |
| 12/19/2001 | CN1076498C Spin valve magnetoresistive sensor and magneitc recording system using the sensor |
| 12/18/2001 | US6331943 MTJ MRAM series-parallel architecture |
| 12/18/2001 | US6331773 Pinned synthetic anti-ferromagnet with oxidation protection layer |
| 12/13/2001 | US20010050859 Memory cell array and method for manufacturing it |
| 12/13/2001 | US20010050834 Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias |
| 12/11/2001 | US6330135 Strontium titanate, ferromagnetic oxide, thin film and rare earth manganate |
| 12/11/2001 | US6329818 Magnetic field sensor having giant magnetoresistive effect elements, manufacturing method and apparatus therefor |
| 12/11/2001 | US6329087 Insulating layer film of the formula al-n sub.(1-x)-o subx; aluminum oxynitirde, substrate is alumina-titanium carbide, |
| 12/11/2001 | US6329078 Tunnel barrier layer in the ferromagnetic tunnel junction multilayer structure, high polarization layer of a first nife material and a soft magnetic layer of a second nife material so that said high polarization layer is positioned closer to |
| 12/06/2001 | US20010048608 Magnetic random access memory circuit |
| 12/06/2001 | US20010048304 Non-linear hall IC |
| 12/06/2001 | US20010047930 Method of producing exchange coupling film and method of producing magnetoresistive sensor by using the exchange coupling film |
| 12/05/2001 | EP1160887A2 Hall-effect sensor element with integrated condensers |
| 12/04/2001 | US6327107 Spin tunnel magneto-resistance effect type magnetic sensor and production method thereof |
| 12/04/2001 | US6326780 Magnetic field concentrator array for rotary position sensors |