Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
04/2002
04/25/2002US20020047701 Electric current sensor
04/25/2002US20020047145 MRAM device including spin dependent tunneling junction memory cells
04/25/2002DE10119499A1 Dünnfilm-Magnetspeichervorrichtung zum leichten Steuern eines Datenschreibstroms A thin film magnetic memory device for easily controlling a data write current
04/25/2002DE10047994A1 Hall-Sensor-Bauelement Hall sensor component
04/24/2002EP1199573A2 Electric current sensor
04/24/2002CN1346156A Magnetic resistance element and magnetic device using same
04/24/2002CN1346155A 磁阻元件以及磁阻效应型存储元件 A magnetoresistance effect type magnetoresistive element and a memory element
04/24/2002CN1083597C magnetoresistance effect device
04/23/2002US6376260 Magnetic element with improved field response and fabricating method thereof
04/18/2002US20020044482 MRAM configuration
04/18/2002US20020044481 Thin film magnetic memory device capable of easily controlling a data write current
04/18/2002US20020044479 Magnetoresistive element, and magnetic memory using the same
04/18/2002US20020044396 Tunnel magnetoresistance effect device, and a portable personal device
04/18/2002US20020044394 Spin-valve type thin film magnetic element
04/18/2002US20020043974 Tunneling magnetoresistive element, and magnetic sensor using the same
04/18/2002DE10133646A1 Magnetic thin film memory has word line current control circuit, which forms and breaks current path of write word line corresponding to writing and reading data
04/18/2002DE10050076A1 Verfahren zur Herstellung einer mikrotechnischen Struktur und mikrotechnisches Bauelement A process for producing a micro-structure and micro-engineering technical component
04/18/2002DE10048420A1 Verfahren zum Herstellen von integrierten Schaltungsanordnungen sowie zugehörige Schaltungsanordnungen, insbesondere Tunnelkontaktelemente A method for producing integrated circuit devices and associated circuitry, in particular tunnel contact elements
04/18/2002DE10046782A1 Layer system used, e.g., in a moment filter or magnetic sensor comprises a ferromagnetic layer made of group 3D transition metals, and a fixing layer made of group 4D or 5D transition metals
04/17/2002CN1345091A Semiconductor storage using tunnel magneto-resistance effect and manufacture thereof
04/17/2002CN1345069A Method and device for reading memory cell of resistance crossover point array
04/17/2002CN1345068A Circuit device and method for accelerated ageing in magnetoresistance memory
04/17/2002CN1345067A Resistance crossover point array capable of tolerating short-circuit
04/17/2002CN1082936C Material array and its prep.
04/16/2002US6373247 Magnetoresistive sensor element with selective magnetization direction of the bias layer
04/16/2002US6373242 GMR sensor with a varying number of GMR layers
04/16/2002US6373241 Sensor device having a magnetic field sensor integrated with an electronic control circuit
04/11/2002WO2002029819A2 An analog functional module using magnetoresistive memory technology
04/11/2002US20020042158 Method of fabricating a micro-technical structure, and micro-technical component
04/11/2002US20020042029 Method for fabricating a resist pattern, a method for patterning a thin film and a method for manufacturing a micro device
04/11/2002US20020042028 Overcoating with polymethylglutarimide; forming photoresists; exposure; development
04/11/2002US20020041004 Monolithically integrable inductor
04/10/2002EP1195821A1 Spin valve device with spin-dependent specular reflection
04/10/2002EP1195820A2 Integrated magnetoresistive circuit
04/10/2002CN1343986A Magnetic resistance memory modulus
04/10/2002CN1082694C Reluctance head of self-rotary valve, mfg. method therefor and magnetic recording/reproducing device
04/09/2002US6369993 Magnetoresistance effect sensor and magnetoresistance detection system and magnetic storage system using this sensor
04/09/2002US6368878 Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices
04/09/2002US6368706 Magnetoresistance effect element
04/04/2002WO2002027344A1 Hall-sensor component
04/04/2002WO2002005470A3 Magnetoresistive trimming of gmr circuits
04/04/2002US20020039308 MRAM configuration
04/04/2002US20020039265 Magnetoresistance effect element, magnetic head and magnetic reproducing system
04/04/2002DE10134866A1 Horizontally growing carbon nanotubes for field effect transistors, involves synthesizing carbon nanotubes at exposed surfaces of catalyst pattern
04/04/2002DE10043947A1 Current conductor of integrated circuit, producing magnetic field with transitive effect, includes recess modifying field produced
04/03/2002EP1193742A2 Method for fabricating integrated circuits, corresponding circuits, particularly tunnel contacts
04/03/2002CN1343359A Read/write architecture for MRAM
04/03/2002CN1343016A Magnetoresistance element, its manufacturing method and forming method for compound ferromagnet film
04/02/2002US6366494 Magnetoresistive memory having elevated interference immunity
04/02/2002US6366194 Component holder for a hall sensor and process for manufacturing a component holder
04/02/2002US6365948 Magnetic tunneling junction device
04/02/2002US6365419 High density MRAM cell array
04/02/2002US6365286 Magnetic element, magnetic memory device, magnetoresistance effect head, and magnetic storage system
04/02/2002US6364964 Manufacturing method of spin valve magnetoresistive effect element and manufacturing method of thin-film magnetic head with the element
03/2002
03/28/2002WO2002025749A2 Magnetic layer system and a component comprising such a layer system
03/28/2002WO2002025642A1 Giant magnetoresistive sensor having self-consistent demagnetization fields
03/28/2002WO2001084570A3 Magnetic element with insulating veils and fabricating method thereof
03/28/2002US20020037595 Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same
03/28/2002US20020036918 Thin film magnetic memory device capable of reducing number of wires and reading data at high speed
03/28/2002US20020036917 Nonvolatile solid-state memory devices and memory using magnetoresistive effect, and recording/reproducing method of the memory device and memory
03/28/2002US20020036878 Magnetoresistive element
03/28/2002US20020036875 Magnetoresistive head
03/28/2002US20020036874 Magnetoresistive device and method of manufacturing same and thin-film magnetic head and method of manufacturing same
03/28/2002US20020036497 Magnetoresistive device and method of manufacturing same and thin-film magnetic head and method of manufacturing same
03/28/2002US20020036331 Multi-bit magnetic memory cells
03/28/2002US20020036315 Magnetoresistive element and magnetoresistive device using the same
03/28/2002CA2435025A1 Magnetic layer system and a component having such a layer system
03/27/2002EP1191344A2 Magnetoresistive element and magnetoresistive device using the same
03/27/2002CN1341967A 集成电路装置 The integrated circuit device
03/27/2002CN1081819C Magnetoresistive transducer, method for forming magnetic film, and magnetic recording/reproducing drive
03/26/2002US6363000 Write circuit for large MRAM arrays
03/26/2002US6361863 Device having magnetoresistive material
03/21/2002WO2002023638A2 An optically addressed spin-polarised diode
03/21/2002WO2002023564A1 Method of manufacturing a spin valve structure
03/21/2002US20020034662 For applications such as magnetic memories, magnetic sensors, spin calculation devices
03/21/2002US20020034661 Oxidizing ferromagnetic material of sense layer, depositing aluminium on oxidized ferromagnetic material of sense layer, whereafter this aluminium oxidizes to an aluminium oxide film using oxygen from oxidized ferromagnetic material
03/21/2002US20020034096 Read/write architecture for MRAM
03/21/2002US20020034094 Magnetic memory
03/21/2002US20020034056 Giant magnetoresistive sensor having selfconsistent demagnetization fields
03/21/2002US20020034055 Spin valve magnetoresistive sensor having CPP structure
03/21/2002DE10043159A1 Speicherzellenanordnung und Verfahren zu deren Herstellung Memory cell arrangement, and processes for their preparation
03/20/2002EP1189293A2 Monolithic integrable inductor
03/20/2002EP1189237A1 Data storage devices
03/20/2002EP1189236A1 Integrated memory with magnetoresistive storage effect memory cells and driving method for such a memory
03/20/2002EP1101125B1 Method for evaluating signals of magnetoresistive sensors
03/20/2002CN1341281A Storage cell arrangement and method for producing the same
03/20/2002CN1340867A 磁阻元件 Magnetoresistive element
03/20/2002CN1340824A Mram装置 Mram device
03/20/2002CN1340823A Word line electronic drive circuit of memory matrix and memory equipment
03/19/2002US6359829 Magnetic memory
03/19/2002US6359805 Thin film magnetic memory device capable of easily controlling a data write current
03/19/2002US6359760 Thin film conductor layer, magnetoresistive element using the same and method of producing thin film conductor layer
03/19/2002US6358757 Method for forming magnetic memory with structures that prevent disruptions to magnetization in sense layers
03/19/2002US6358392 Bismuth thin films structure and method of construction
03/19/2002US6358379 Method of forming a magneto-resistance effect thin film
03/14/2002US20020031008 Magnetic device and method for manufacturing the same, and solid magnetic memory
03/14/2002US20020030951 Method of making magnetoresistive head element
03/14/2002US20020030950 Magnetic transducer, thin film magnetic head, method of manufacturing magnetic transducer and method of manufacturing thin film magnetic head
03/14/2002US20020030948 Magnetoresistive effect thin-film magnetic head
03/14/2002US20020030946 Magnetoresistive effect thin-film magnetic head