Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
03/2003
03/12/2003CN1402252A Magnetic storage device
03/12/2003CN1402223A Magnetic sensor, magnetic head and magnetic recording device
03/11/2003US6532164 Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a device
03/11/2003US6531723 Magnetoresistance random access memory for improved scalability
03/11/2003US6531371 Electrically programmable resistance cross point memory
03/06/2003WO2003019590A1 Enhanced ion beam etch selectivity of magnetic thin films using carbon-based gases
03/06/2003WO2003019586A1 Magnetoresistive device and electronic device
03/06/2003WO2003019568A2 Control device for reversing the direction of magnetisation without an external magnetic field
03/06/2003WO2003019567A1 Mram with midpoint generator reference
03/06/2003WO2003019564A2 Magnetoresistive level generator
03/06/2003WO2003019217A1 Magnetoresistive sensor
03/06/2003US20030042903 Magnetic detection device adapted to control magnetization of free magnetic layer by using antiferromagnetic layer, and manufacturing method for the same
03/06/2003US20030042901 Method and system for improving the efficiency of the set and offset straps on a magnetic sensor
03/06/2003US20030042900 Three dimensional conductive strap for a magnetorestrictive sensor.
03/06/2003US20030042562 Magnetoresistive device and electronic device
03/06/2003US20030041440 Assembling method for producing a magnetic sensor with high output accuracy
03/05/2003EP1288669A2 Assembling method for producing a magnetic sensor with high output accuracy
03/05/2003EP1287371A1 Magnetic field sensor
03/05/2003EP0937302B1 Spin dependent tunneling memory
03/05/2003CN1400607A Magnetic RAM device containing offset conductor
03/05/2003CN1400471A 磁传感器 Magnetic sensors
03/04/2003US6529404 Thin film magnetic memory device capable of reducing number of wires and reading data at high speed
03/04/2003US6529353 Magnetoresistive tunnel junction element with bias magnetic field applying layer
03/04/2003US6528326 Magnetoresistive device and method for producing the same, and magnetic component
03/04/2003US6526649 Manufacturing method of magneto-resistive effect type head
02/2003
02/27/2003WO2003017295A1 Layer system having an increased magnetoresistive effect and use of the same
02/27/2003US20030039083 Magnetic sensor, magnetic head and magnetic recording apparatus
02/27/2003US20030039082 Magnetoresistive effect head and a method of producing the same
02/27/2003US20030039080 Magneto-resistive device, and magnetic head and head suspension assembly using same
02/27/2003US20030039078 Method for fabricating a non-parallel magnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor element
02/27/2003US20030039062 Magnetic field sensor and magnetic reading head
02/27/2003US20030038629 Leakage magnetism detecting sensor of magnetic penetration apparatus
02/27/2003US20030038106 Enhanced ion beam etch selectivity of magnetic thin films using carbon-based gases
02/26/2003EP1286354A1 Multi-bit magnetic memory cells
02/26/2003EP1286336A2 Magnetic sensor, magnetic head and magnetic recording apparatus
02/26/2003CN1102283C Ferromagnetic tunnel junction magnet sensor
02/25/2003US6525532 Stacked layer creating tunneling junctions; ferromagnetic particles between barrier layers
02/25/2003US6524689 Castellation technique for improved lift-off of photoresist in thin-film device processing and a thin-film device made thereby
02/20/2003WO2003014758A1 Gmr magnetic transducer with nano-oxide exchange coupled free layers
02/20/2003US20030035255 Exchange coupling film capable of improving playback characteristics
02/20/2003US20030035254 Magnetic head using magneto-resistive effect and a manufacturing method thereof
02/20/2003US20030035250 Spin valve head with a current channeling layer
02/20/2003US20030034324 Method of manufacturing magnetoresistive device, thin film magnetic head and head assembly
02/19/2003EP1284010A2 Method of fabricating flux concentrating layer for use with magnetoresistive random access memories
02/19/2003EP1206707B1 Hall sensor array for measuring a magnetic field with offset compensation
02/19/2003EP0678213B1 Magnetoresistive structure with alloy layer
02/19/2003CN1398434A Magnetore sistance effect element and magnetoresistance effect type magnetic head
02/19/2003CN1398433A Magnetoresistance effect element and magnetoresistance effect type magnetic head, and method of mfg. element and magnetic head
02/18/2003US6522579 Non-orthogonal MRAM device
02/18/2003US6522575 Semiconductor memory device having magnetoresistive elements
02/18/2003US6522574 MRAM architectures for increased write selectivity
02/18/2003US6522573 Solid-state magnetic memory using ferromagnetic tunnel junctions
02/13/2003US20030031894 In-situ oxidized films for use as gap layers for a spin-valve sensor and methods of manufacture
02/13/2003US20030031046 Thin film magnetic memory device realizing both high-speed data reading operation and stable operation
02/13/2003US20030031045 Magnetic random access memory including memory cell unit and reference cell unit
02/13/2003US20030030946 Exchange coupled film having magnetic layer with non-uniform composition and magnetic sensing element including the same
02/13/2003US20030030944 In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture
02/13/2003US20030030522 Magnetic switch capable of instantaneous switching of an output signal and magnetic sensor
02/13/2003US20030030434 Exchange coupling film having improved wettability of seed layer
02/12/2003EP1282902A2 Magnetic multilayer structure with improved magnetic field range
02/12/2003CN1396598A Magnetic memory device
02/12/2003CN1101542C Magnetoresistive sensor for measuring dimension
02/11/2003US6519124 Magnetic tunnel junction read head using a hybrid, low-magnetization flux guide
02/11/2003US6519123 Method to manufacture magnetic tunneling elements using inductively coupled plasma
02/11/2003US6518071 Magnetoresistive random access memory device and method of fabrication thereof
02/11/2003US6517896 Forming very thin composite layer of cobalt, nickel and iron free layer
02/06/2003WO2003010772A1 Non orthogonal mram device
02/06/2003US20030026894 Manufacturing method of magnetic memory device
02/06/2003US20030026125 Thin film magnetic memory device including memory cells having a magnetic tunnel junction
02/06/2003US20030026049 GMR magnetic transducer with nano-oxide exchange coupled free layers
02/06/2003US20030026048 Magnetoresistive element and magnetic head
02/06/2003US20030026047 Junction stability and yield for spin valve heads
02/05/2003EP1282132A2 Data storage device
02/05/2003CN1395253A Film magnetic storage of storage unit containing tunnel magnetoresistive element
02/04/2003US6515837 Magnetoresistive head and magnetic storage apparatus
02/04/2003US6515573 Method and system for providing edge-junction TMR utilizing a hard magnet as a pinned layer
02/04/2003US6515339 Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
01/2003
01/30/2003US20030023805 Memory module and system, an information processing apparatus and a mehtod of use
01/30/2003US20030021908 Gas cluster ion beam process for smoothing MRAM cells
01/30/2003US20030021072 Magnetic sensor capable of providing stable resistance change rate
01/30/2003US20030020471 Assembly for measuring a magnetic field, using a bridge circuit of spin tunnel elements and a production method for the same
01/30/2003US20030020470 Magnetic field sensor
01/30/2003US20030020467 Lapping monitor element, combined magnetic transducer element and lapping monitor element, and method for manufacturing magnetic transducer element
01/29/2003EP1279928A2 Magnetic field sensor
01/29/2003EP1279176A2 Magnetic element with insulating veils and fabricating method thereof
01/29/2003CN1394279A Leakage magnetism detecting sensor of magnetic penetration apparatus
01/29/2003CN1393887A Resistance cross point array connecting storage location
01/28/2003US6512689 MRAM without isolation devices
01/28/2003US6512688 Device for evaluating cell resistances in a magnetoresistive memory
01/28/2003US6512660 Current perpendicular-to-the-plane magnetoresistance read head with longitudinal or transverse bias provided by current
01/28/2003US6511855 Method of forming ferromagnetic tunnel junctions with enhanced magneto-resistance
01/23/2003WO2003007304A2 Magnetic memory unit and magnetic memory array
01/23/2003WO2003007248A2 Fabrication of a high resolution, low profile credit card reader and card reader for transmission of data by sound
01/23/2003WO2002019386A3 High density mram cell array
01/23/2003US20030017723 Magnetoresistive device and method for producing the same, and magnetic component
01/23/2003US20030016475 Magnetoresistive element with oxide magnetic layers and metal magnetic films deposited thereon
01/23/2003DE10128150C1 Magnetoresistive sensor system used as angle sensor comprises soft magnetic measuring layer system and hard magnetic reference layer system
01/22/2003CN1393022A Method of manufacturing spin valve structure
01/22/2003CN1392618A Magnetic resistance element and magnetic random access storage using said element
01/21/2003US6510079 MRAM configuration
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