Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
08/2003
08/19/2003US6608776 Thin film magnetic memory device having a highly integrated memory array
08/19/2003US6607641 Using antiferromagnetic material comprising manganese and platinum group metals; heat treatment of thin film magnetic heads
08/14/2003WO2003067601A1 Magnetic storage unit using ferromagnetic tunnel junction element
08/14/2003WO2003067600A2 Antiferromagnetically stabilized pseudo spin valve for memory applications
08/14/2003WO2002019337A3 Mtj mram series-parallel architecture
08/14/2003US20030151944 Magnetic switching element and a magnetic memory
08/14/2003US20030151857 Flux guide type device, head having the same, and drive
08/14/2003US20030151406 Magnetic field sensor
08/14/2003US20030151079 Self-aligned magnetic clad write line and its method of formation
08/13/2003EP1335382A1 Magnetic yoke structure in MRAM devices to reduce programming power consumption and a method to make the same
08/13/2003CN1435842A Film magnet memory with high precision data reading structure
08/13/2003CN1435841A Magnetic yoke structure capable of reducing programming energy consumption for MRAM apparatus and producing method thereof
08/13/2003CN1118074C Magnetic spin Co-Cu valve and producing process thereof
08/12/2003US6605837 Memory cell configuration and production method
08/12/2003US6605836 Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information
08/07/2003WO2003025945A3 Compensation of a bias magnetic field in a storage surface of a magnetoresistive storage cell
08/07/2003WO2002084755A3 Keepers for mram electrodes
08/07/2003US20030147289 Magnetic memory
08/07/2003US20030147274 Thin film magnetic memory device for selectively supplying a desired data write current to a plurality of memory blocks
08/07/2003US20030146515 Semiconductor device having wiring line with hole, and manufacturing method thereof
08/07/2003US20030146459 Antiferromagnetically stabilized pseudo spin valve for memory applications
08/07/2003US20030146186 Magnetoresistive effect thin-film magnetic head and manufacturing method of magnetoresistive effect thin-film magnetic head
08/07/2003US20030146086 Production method for spin valve film and production method of magnetoresistance effect type magnetic head
08/07/2003US20030145453 Method of making current-perpendicular-to-the-plane structure magnetoresistive head
08/07/2003DE10202287C1 Monolithic bridge circuit manufacturing method, by heating of anti-ferromagnetic layers to above blocking temperature and cooled so that it follows magnetization of adjacent magnetic reference layers
08/06/2003EP1333486A2 Semiconductor device having wiring line with hole, and manufacturing method thereof
08/06/2003EP1332499A2 Magnetoresistive memory (mram)
08/06/2003EP1332498A2 An analog functional module using magnetoresistive memory technology
08/06/2003EP0958502B1 Magnetic sensor
08/06/2003EP0882289B1 Lateral magneto-electronic device exploiting a quasi-two-dimensional electron gas
08/06/2003CN1434455A Semiconductor IC device and making method thereof
08/05/2003US6603678 Thermally-assisted switching of magnetic memory elements
08/05/2003US6603677 Three-layered stacked magnetic spin polarization device with memory
08/05/2003US6603642 Magnetic transducer having a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers and a fixed-orientation-of-magnetization layer and thin film magnetic head including the magnetic transducer
08/05/2003US6603628 In-situ pressure sensor based on read head resistance
08/05/2003US6602097 High frequency electrical connector
07/2003
07/31/2003WO2003063260A1 High-sensitivity magnetic field sensor
07/31/2003WO2003063249A1 Magnetic storage apparatus and manufacturing method thereof
07/31/2003WO2003063173A1 Mram without isolation devices
07/31/2003WO2002069354A3 Current-responsive resistive component
07/31/2003US20030143431 CPP magnetic sensing element in which pinned magnetic layers of upper and lower multilayer films are magnetized antiparallel to each other, method for making the same, and magnetic sensing device including the same
07/31/2003US20030142578 Electrically programmable resistance cross point memory structure
07/31/2003US20030142562 Magnetoresistive memory cell with polarity-dependent resistance
07/31/2003US20030142540 Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements
07/30/2003EP1183691B1 Local shielding for memory cells
07/30/2003CN1433093A Magnetosensitive resistor metal film
07/30/2003CN1433023A Magnetic film memory device with redundant repair function
07/30/2003CN1433021A 磁存储器 Magnetic memory
07/30/2003CN1432820A Reluctance sensor
07/29/2003US6600314 Thickness of spin polarization layer stacked on soft magnetic layer has higher coercive force
07/29/2003US6600184 System and method for improving magnetic tunnel junction sensor magnetoresistance
07/24/2003WO2003061025A1 Compound semiconductor multilayer structure, hall device, and hall device manufacturing method
07/24/2003WO2003060919A2 Resistive memory elements with reduced roughness
07/24/2003WO2003060538A1 Integrated magnetic field strap for signal isolator
07/24/2003WO2002089187A3 An improved method for forming minimally spaced mram structures
07/24/2003US20030137870 Magnetic memory
07/24/2003US20030137868 Magneto-resistive device having soft reference layer
07/24/2003US20030137785 Magnetic sensing element containing half-metallic alloy
07/24/2003US20030137784 Magnetoresistive film having reduced electric resistance
07/24/2003US20030137783 Ferromagnetic tunnel junction element exhibiting high magnetoresistivity at finite voltage and tunnel magnetoresistive head provided therewith, magnetic head slider, and magnetic disk drive
07/24/2003US20030137381 Revolution detecting device
07/24/2003US20030137293 Path sensor with an electromagnetic converter element
07/24/2003US20030137028 Semiconductor integrated circuit device and method of manufacturing the same
07/24/2003CA2473547A1 Integrated magnetic field strap for signal isolator
07/23/2003EP1329950A2 Magnetoresistive integrated circuit device and method of manufacturing the same
07/23/2003EP1329695A1 Magnetoresistance sensor for measuring dimensions
07/23/2003CN1431651A Magnetic resistance megnetic head current upright on plane structure
07/22/2003US6597601 Thin film magnetic memory device conducting data read operation without using a reference cell
07/22/2003US6597548 Magnetoresistive element and magnetic head
07/22/2003US6597547 Magnetoresistive device with an α-Fe2O3 antiferromagnetic film and indirect exchange coupling film layers of differing thickness
07/22/2003US6597049 Conductor structure for a magnetic memory
07/22/2003US6594884 Forming pinned layer structure by forming cobalt based first and second films and forming nickel iron based middle film between first and second films; improves giant magnetoresistance for spin valve sensors
07/17/2003WO2003058716A1 Discrete semiconductor component
07/17/2003WO2003058173A1 System and method for using magneto-resistive sensors as dual purpose sensors
07/17/2003US20030134513 Methods of forming integrated circuitry, semiconductor processing methods, and processing method of forming MRAM circuitry
07/17/2003US20030134096 Magnetic element with insulating veils and fabricating method thereof
07/17/2003US20030134089 Polymer arrays from the combinatorial synthesis of novel materials
07/17/2003US20030133334 Thin film magnetic memory device having redundancy repair function
07/17/2003US20030133234 Magnetoresistance effect device, and magnetoresistance effect magnetic head
07/17/2003US20030133232 Forming a bottom spin valve sensor element having a synthetic antiferromagnetic (SyAF) pinned layer, based on a nickel-chromium magnoresistive enhancing seed layer and a iron tantalum oxide covering layer
07/17/2003US20030132826 Integrated magnetic field strap for signal isolator
07/17/2003US20030132468 Resistive memory elements with reduced roughness
07/17/2003CA2471864A1 System and method for using magneto-resistive sensors as dual purpose sensors
07/16/2003EP1328027A2 Magnetoresistive element
07/16/2003EP1327882A1 Leakage magnetism detecting sensor of magnetic penetration apparatus
07/16/2003CN1430292A Magnetic switch element and magnetic memory
07/16/2003CN1430226A Film magnet storage device for writing data through bidirectional current
07/16/2003CN1430205A Ferromagnetic stack material with reliable uniaxial anisotropy
07/15/2003US6594191 Segmented write line architecture
07/15/2003US6594175 High density giant magnetoresistive memory cell
07/15/2003US6593608 Magneto resistive storage device having double tunnel junction
07/15/2003US6591481 Method of manufacturing magnetoresistive device and method of manufacturing thin-film magnetic head
07/15/2003US6591479 Production method for a spin-valve type magnetoresistive element
07/10/2003US20030129454 Multilayer; miniaturization, high density recording
07/10/2003US20030128579 Non-volatile magnetic memory
07/10/2003US20030128484 Ferromagnetic layered material having reliable uniaxial anisotropy
07/10/2003US20030128483 Exchange coupling film, magneto-resistance effect device, magnetic head, and magnetic random access memory
07/10/2003US20030128481 Current-perpendicular-to-the-plane structure magnetoresistive head
07/10/2003US20030128479 Magnetoresistive head and information reproduction apparatus
07/10/2003US20030128031 Magnetoresistive sensor
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