| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 07/31/2002 | CN1361534A Thin film magnetic storaging apparatus having storing unit with magnetic tunnel joint part |
| 07/30/2002 | US6426620 Magnetic field sensing element and device having magnetoresistance element and integrated circuit formed on the same substrate |
| 07/30/2002 | US6426012 Wet chemical etch process for patterning MRAM magnetic layers |
| 07/25/2002 | US20020097601 Non-orthogonal MRAM device |
| 07/25/2002 | US20020097599 Magnetic random access memory |
| 07/25/2002 | US20020097539 Magnetoresistive sensor capable of providing strong exchange coupling magnetic field, and thin-film magnetic head using the same |
| 07/25/2002 | US20020097538 Current perpendicular-to-the-plane structure spin valve magnetoresistive head |
| 07/25/2002 | US20020097537 Magnetoresistive tunnel junction element |
| 07/25/2002 | US20020097536 Spin tunnel magneto-resistance effect type magnetic sensor and production method thereof |
| 07/25/2002 | US20020097534 Magnetic tunnel junction read head devices having a tunneling barrier formed by multi-layer, multi-oxidation processes |
| 07/25/2002 | US20020097533 Current perpendicular to plane type magnetoresistive device, magnetic head, and magnetic recording/reproducing apparatus |
| 07/25/2002 | US20020097531 Magnetoresistive device and method of manufacturing same and thin-film magnetic head and method of manufacturing same |
| 07/25/2002 | DE10107380C1 Magnetoresistive memory cell write-in method uses currents supplied to word line and bit line for providing superimposed magnetic fields causing alteration in magnetization direction |
| 07/25/2002 | DE10060432A1 Magnetoresistiver Speicher und Verfahren zu seinem Auslesen Magnetoresistive memory and method for its reading |
| 07/24/2002 | EP1225593A1 Magnetic device based on spin polarization and rotating magnetization, memory and writing procedure utlilizing said device |
| 07/24/2002 | EP1225592A2 Information storage device |
| 07/24/2002 | EP1225591A2 Magnetic random access memory |
| 07/23/2002 | US6424565 Solid-state memory with magnetic storage cells |
| 07/23/2002 | US6424564 MRAM architectures for increased write selectivity |
| 07/23/2002 | US6424563 MRAM memory cell |
| 07/23/2002 | US6424562 Read/write architecture for MRAM |
| 07/23/2002 | US6424561 MRAM architecture using offset bits for increased write selectivity |
| 07/23/2002 | US6424018 Semiconductor device having a hall-effect element |
| 07/23/2002 | US6423553 Method of making a magnetoelectronic device |
| 07/18/2002 | WO2002009158A3 Semiconductor structure including a magnetic tunnel junction |
| 07/18/2002 | WO2002007166A3 Mram architectures for increased write selectivity |
| 07/18/2002 | US20020094374 A magentic layer is formed over the substrate, which has a first value, ion implanting a portion of magnetic layer, ion implanted magnetic layer has a second value of magnetic characteristics different from first value |
| 07/18/2002 | US20020093849 Thin film magnetic memory device capable of easily controlling a data write current |
| 07/18/2002 | US20020093848 Device for evaluating cell resistances in a magnetoresistive memory |
| 07/18/2002 | US20020093845 Magnetic semiconductor memory apparatus and method of manufacturing the same |
| 07/18/2002 | US20020093068 Magnetoelectronic memory element with inductively coupled write wires |
| 07/18/2002 | DE10130829A1 Dünnfilmmagnetspeichervorrichtung mit Speicherzellen, die einen Magnettunnelübergang aufweisen The thin film magnetic memory device comprising memory cells having a magnetic tunnel junction |
| 07/17/2002 | EP1223585A1 Tri-layer stack spin polarised magnetic device and memory using the same |
| 07/17/2002 | EP1222662A1 Polyvalent, magnetoresistive write/read memory and method for writing and reading a memory of this type |
| 07/17/2002 | EP1019913B1 Memory cell arrangement |
| 07/16/2002 | US6421271 MRAM configuration |
| 07/16/2002 | US6420179 Combinatorial sythesis of organometallic materials |
| 07/11/2002 | WO2002054407A2 Mram write apparatus and method |
| 07/11/2002 | WO2002054389A2 Enhanced free layer for a spin valve sensor in a magnetic read head |
| 07/11/2002 | WO2002019336A3 Mtj mram parallel-parallel architecture |
| 07/11/2002 | US20020090534 Nonmagnetic substrate, underlayer deposited on substrate, magnetic laminated film formed on underlayer; magnetic encoder with further improved thermal resistance |
| 07/11/2002 | US20020089874 Thermally-assisted switching of magnetic memory elements |
| 07/10/2002 | EP1221622A2 Magneto resistive sensor |
| 07/10/2002 | CN1357492A Amorphous La1-xSrxMnO3-5 compound and its prepn |
| 07/09/2002 | US6418046 MRAM architecture and system |
| 07/09/2002 | US6417561 Keepers for MRAM electrodes |
| 07/09/2002 | US6416636 Method for manufacturing a magnetoresistive element with conductive films and magnetic domain films overlapping a central active area |
| 07/04/2002 | WO2002052658A1 Production method for spin valve film and production method of magnetoresistance effect type magnetic head |
| 07/04/2002 | WO2002052650A1 Magnetoresistance storage element |
| 07/04/2002 | US20020086448 Method for manufacturing a semiconductor device |
| 07/04/2002 | US20020086182 Spin tunnel magnetoresistive effect film and element, magnetoresistive sensor using same, magnetic apparatus, and method for manufacturing same |
| 07/04/2002 | US20020085411 Method for preventing unwanted programming in an MRAM configuration |
| 07/04/2002 | US20020085322 Enhanced free layer for a spin valve sensor |
| 07/04/2002 | US20020085319 Ferromagnetic tunnel magnetoresistive devices and magnetic head |
| 07/04/2002 | US20020085317 Magnetoresistive head, producting method of the magnetoresistive head and magnetic storage device |
| 07/04/2002 | US20020084501 Magnetoresistive device and method for producing the same, and magnetic component |
| 07/04/2002 | US20020084500 Magnetic random access memory and method for manufacturing the same |
| 07/03/2002 | EP1218759A1 Device for measuring current comprising differential sensors which are sensitive to magnetic fields and which are comprised of at least two hall sensors |
| 07/03/2002 | EP1141960B1 Read/write architecture for a mram |
| 07/03/2002 | EP1099221B1 Magnetoresistive memory with low current density |
| 07/02/2002 | US6414825 Multilayer; hard dielectric film |
| 07/02/2002 | US6413788 Keepers for MRAM electrodes |
| 06/27/2002 | WO2002050924A1 Magnetoresistive device, magnetic head, and magnetic disk player |
| 06/27/2002 | WO2002009126A3 Spin valve structure |
| 06/27/2002 | US20020081778 Thin-film heat sink and method of manufacturing same |
| 06/27/2002 | US20020081457 Magnetoresistive film having non-magnetic spacer layer of reduced thickness |
| 06/27/2002 | US20020080646 Thin film magnetic memory device including memory cells having a magnetic tunnel junction |
| 06/27/2002 | US20020080644 Magnetic random access memory |
| 06/27/2002 | US20020080643 Magnetic random access memory |
| 06/27/2002 | US20020080641 Semiconductor memory device |
| 06/27/2002 | US20020078550 Manufacturing method of magnetoresistive element and film forming apparatus |
| 06/26/2002 | CN1355535A Method for avoiding unhoped programmed in magnetoresistive memory device |
| 06/25/2002 | US6411476 Ferromagnetic free layer having a magnetic moment that is free to rotate from a first direction in response to a signal field; ferromagnetic pinned layer; spacer layer; antiferromagnetic pinning layer, e.g. ni-mn |
| 06/25/2002 | US6411100 Apparatus for evaluating magnetoresistive head |
| 06/25/2002 | US6411086 Differential solenoidal magnetic field sensing device and method for manufacturing the same |
| 06/25/2002 | US6410331 Combinatorial screening of inorganic and organometallic materials |
| 06/20/2002 | WO2001045141A8 Method and apparatus for smoothing thin conductive films by gas cluster ion beam |
| 06/20/2002 | US20020076940 Manufacture of composite oxide film and magnetic tunneling junction element having thin composite oxide film |
| 06/20/2002 | US20020076837 Thin films for magnetic device |
| 06/20/2002 | US20020076572 Method for fabricating integrated circuit arrangements, and associated circuit arrangements, in particular tunnel contact elements |
| 06/20/2002 | US20020075722 Thin-film magnetic element capable of effectively orienting magnetization direction of magnetic layer and manufacturing method thereof |
| 06/20/2002 | US20020075718 MRAM module configuration |
| 06/20/2002 | US20020075608 Differential detection read sensor, thin film head for perpendicular magnetic recording and perpendicular magnetic recording apparatus |
| 06/20/2002 | US20020074575 Integrated circuit arrangement |
| 06/20/2002 | DE10053965A1 Verfahren zur Verhinderung unerwünschter Programmierungen in einer MRAM-Anordnung A method of preventing unwanted programming in an MRAM array |
| 06/19/2002 | EP1215738A2 Magnetoresistive transducer |
| 06/19/2002 | CN1354519A Method for raising breakdown voltage in magnetic tunnel junction |
| 06/19/2002 | CN1354457A Magnetic head for hard disk drive |
| 06/19/2002 | CN1354369A 电子装置及其制造方法 Electronic device and method of manufacturing |
| 06/13/2002 | WO2002047182A1 Magnetoresistance effect device, and magnetoresistance effect magnetic head |
| 06/13/2002 | WO2002047089A2 Magnetoresistive memory and method for reading out from the same |
| 06/13/2002 | US20020071224 Magnetoresistive transducer having stronger longitudinal bias field |
| 06/13/2002 | US20020069511 Method for manufacturing exchange bias type magnetic field sensing element |
| 06/13/2002 | DE10059182A1 Schaltungsanordnung zum zerstörungsfreien, selbstnormierenden Auslesen von MRAM-Speicherzellen Circuit arrangement for non-destructive, selbstnormierenden reading MRAM memory cells |
| 06/12/2002 | EP1055259B1 Magnetoresistor with tunnel effect and magnetic sensor using same |
| 06/12/2002 | CN1353421A Film magnetic body storage possessing highly integrated storage array |
| 06/11/2002 | US6404674 Cladded read-write conductor for a pinned-on-the-fly soft reference layer |
| 06/11/2002 | US6404673 Magnetic memory device and method of reading data in magnetic memory device |
| 06/11/2002 | US6404672 Magnetic element and magnetic memory device |
| 06/11/2002 | US6404603 Improve thermal conductivity of a first and a second shield gap films and to suppress a rise in temperature in an mr element. |