| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 12/04/2001 | US6326779 Magnetic detector having separate base and connector units and production process therefor |
| 12/04/2001 | US6326092 Magnetoresistance device and production method thereof |
| 12/04/2001 | US6326090 Ten different inorganic materials that cannot interdiffuse, area within regions is hydrophilic, outside regions is hydrophobic |
| 12/04/2001 | US6325914 Method and device for transferring spin-polarized charge carriers |
| 12/04/2001 | US6325900 Providing magnetic memory which can be produced more easily than conventional processes and which can keep stably and satisfactorily film quality and film thickness of each layer |
| 11/29/2001 | US20010046110 Magnetoresistive device having a highly smooth metal reflective layer |
| 11/28/2001 | EP0548375B1 Semiconductor sensor and its manufacturing method |
| 11/28/2001 | CN1075651C Spin valve magnet resistive sensor and magnetic recording system using the sensor |
| 11/27/2001 | US6323644 Rotation sensor |
| 11/27/2001 | US6322640 Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element |
| 11/22/2001 | WO2001088562A1 Magnetic field sensor using magnetoresistance and method for making same |
| 11/22/2001 | WO2001088561A1 Magnetic field sensor |
| 11/22/2001 | US20010043986 Forming a laminate having an antiferromagnetic layer, a ferromagnetic layer, and at the interface between a seed layer comprising a (111) plane of face-centered cubic crystal |
| 11/22/2001 | US20010043488 Magnetoresistive memory having elevated interference immunity |
| 11/22/2001 | DE10117279A1 Non-linear Hall integrated circuit converts Hall voltage output by Hall element into output voltage, such that relationship between magnetic field intensity and output voltage is made non-linear |
| 11/21/2001 | EP1155462A1 Storage cell arrangement and method for producing the same |
| 11/21/2001 | EP1155453A1 Extraordinary magnetoresistance at room temperature in inhomogeneous narrow-gap semiconductors |
| 11/21/2001 | EP1155287A1 Hall sensor with a reduced offset signal |
| 11/21/2001 | CN1323442A Magnetoresistive element and the use thereof as storage element in a storage cell array |
| 11/15/2001 | US20010040781 Spin valve thin film magnetic element and thin film magnetic head |
| 11/15/2001 | US20010040778 Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices |
| 11/15/2001 | US20010040777 Magnetoresistive sensor, magnetic head and magnetic disk apparatus |
| 11/15/2001 | US20010040774 Method and system for improving the sensitivity of a spin valve magnetoresistance sensor |
| 11/14/2001 | CN1321985A Magnetic random access memory |
| 11/13/2001 | US6317375 Method and apparatus for reading memory cells of a resistive cross point array |
| 11/13/2001 | US6317300 Magnetoresistive device having magnetoresistive film and magnetic bias film with side-end faces with different angles of inclination and having insulating film made of electrically insulating material |
| 11/13/2001 | US6317297 Current pinned dual spin valve with synthetic pinned layers |
| 11/08/2001 | WO2001084570A2 Magnetic element with insulating veils and fabricating method thereof |
| 11/08/2001 | WO2001009900A8 High speed latch and flip-flop |
| 11/08/2001 | US20010038927 Desulfurization with scavenger |
| 11/08/2001 | US20010038548 Write circuit for large MRAM arrays |
| 11/07/2001 | EP1152430A2 Ram devices |
| 11/07/2001 | EP1151482A1 Spin dependent tunneling sensor |
| 11/07/2001 | EP0483373B1 Magnetoresistance effect element |
| 11/07/2001 | CN1320973A Magnetic memory element, magnetic memory and method for mfg magnetic memory |
| 11/06/2001 | US6314020 Analog functional module using magnetoresistive memory technology |
| 11/06/2001 | US6313627 Sensor device for detecting the direction of an external magnetic field using a magnetoresistive sensor element |
| 11/06/2001 | US6312840 In which the tunnel current flows reliably in an insulating layer to exhibit a stable magnetic tunnelling effect. |
| 11/01/2001 | US20010036699 Multi-layer tunneling device with a graded stoichiometry insulating layer |
| 11/01/2001 | US20010036675 Magnetic memory with structures that prevent disruptions to magnetization in sense layers |
| 11/01/2001 | US20010036046 Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head |
| 11/01/2001 | US20010036042 Multi-channel magnetoresistive head device |
| 11/01/2001 | US20010035545 MRAM memory |
| 10/31/2001 | CN1320216A Quad-layer GMR sandwich |
| 10/31/2001 | CN1319900A Magnetic sensor and magnetic memory using same |
| 10/31/2001 | CN1319846A MRAM equipment containing differential check amplifier |
| 10/25/2001 | US20010033466 Spin-valve type thin film magnetic element |
| 10/25/2001 | US20010033465 Magnetoresistive head and information regeneration apparatus |
| 10/25/2001 | US20010033464 Tunnel magnetoresistive effective element, a thin film magnetic head, a magnetic head device and a magnetic disk drive device |
| 10/25/2001 | US20010033463 Magnetoresistance-effect element, magnetoresistance-effect magnetic head, and method of manufacturing a magnetoresistance-effect element |
| 10/25/2001 | US20010033462 Thin-film magnetic head having magnetic resistance effect element |
| 10/24/2001 | EP1148511A2 MRAM memory |
| 10/24/2001 | EP1147520A1 Vertically integrated magnetic memory |
| 10/24/2001 | EP1147428A1 Utilization of a magneto-resistive material |
| 10/24/2001 | CN1319225A Magnetoresistive devices, giant magnetoresistive devices and methods for making same |
| 10/18/2001 | WO2001077024A1 CHEMICAL-PRESSURE TAILORING OF LOW-FIELD, ROOM TEMPERATURE MAGNETORESISTANCE IN (Ca, Sr, Ba) Fe0.5Mo0.5O¿3? |
| 10/18/2001 | US20010031547 Method of generating spin-polarized conduction electron and semiconductor device |
| 10/18/2001 | US20010030886 Magnetoresistive memory with a low current density |
| 10/18/2001 | DE10114780A1 Magnetwiderstandsarrays Magnetic resistor arrays |
| 10/18/2001 | DE10057820A1 Magnetisches Element und Magnetspeichervorrichtung The magnetic element and the magnetic memory device |
| 10/18/2001 | DE10020128A1 MRAM-Speicher MRAM memory |
| 10/17/2001 | EP0892928B1 Process for manufacture of a gmr bridge sensor |
| 10/17/2001 | CN1318202A Method of mfg. magnetic tunnel junction device |
| 10/17/2001 | CN1318198A Magnetoresistive memory having improved interference immunity |
| 10/11/2001 | WO2001075891A2 Current conveyor and method for readout of mtj memories |
| 10/11/2001 | WO2001074139A2 Hall-effect element with integrated offset control and method for operating hall-effect element to reduce null offset |
| 10/11/2001 | US20010028538 Magnetoresistive sensor and magnetic storage apparatus |
| 10/11/2001 | US20010028068 Magnetoresistive element substructure, magnetoresistive element and micro device, and methods of manufacturing same |
| 10/11/2001 | CA2405149A1 Hall-effect element with integrated offset control and method for operating hall-effect element to reduce null offset |
| 10/10/2001 | EP1143537A1 Magnetoresistance effect memory device and method for producing the same |
| 10/10/2001 | EP1141960A1 Read/write architecture for a mram |
| 10/10/2001 | CN1317141A Magnetoresistive element and use of same as storage element in storage system |
| 10/10/2001 | CN1317135A Reducing sensor temperature in magnetoresistive recording heads |
| 10/10/2001 | CN1316746A Multidigit magnetic memory element |
| 10/09/2001 | US6301089 Spin-valve type magnetoresistive thin film element comprising free magnetic layer having nife alloy layer |
| 10/09/2001 | US6301088 Magnetoresistance effect device and method of forming the same as well as magnetoresistance effect sensor and magnetic recording system |
| 10/09/2001 | US6300617 Magnetic digital signal coupler having selected/reversal directions of magnetization |
| 10/04/2001 | US20010026471 Magnetic memory element, magnetic memory and manufacturing method of magnetic memory |
| 10/04/2001 | US20010026470 Magnetic field element having a biasing magnetic layer structure |
| 10/04/2001 | US20010026425 Magnetoresistive head, manufacture there of, and magnetic recording/reproducing apparatus with such magnetic head |
| 10/04/2001 | US20010026424 Giant magneto-resistive device and a fabrication process thereof |
| 10/04/2001 | US20010026423 Magnetic head and magnetic disk apparatus |
| 10/04/2001 | US20010025978 Magnetic random access memory capable of writing information with reduced electric current |
| 10/04/2001 | DE10113853A1 Magnetspeicherelement, Magnetspeicher und Herstellungsverfahren für einen Magnetspeicher The magnetic memory element, magnetic memory and manufacturing method for a magnetic memory |
| 10/03/2001 | CN1316104A Magnetic sensor and method for fabricating same |
| 10/02/2001 | US6297983 Reference layer structure in a magnetic storage cell |
| 10/02/2001 | US6297628 Magnetoresistive bridge array |
| 10/02/2001 | US6295718 Method for fabricating a non-parallel magnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor element |
| 09/27/2001 | WO2001071824A1 Method and device for transferring spin-polarized charge carriers |
| 09/27/2001 | WO2001071777A2 Method of fabricating flux concentrating layer for use with magnetoresistive random access memories |
| 09/27/2001 | WO2001071735A1 Magnetic element with an improved magnetoresistance ratio |
| 09/27/2001 | WO2001071734A2 Multi-layer tunneling device with a graded stoichiometry insulating layer |
| 09/27/2001 | WO2001070873A2 Nanocylinder arrays |
| 09/27/2001 | US20010024388 Magnetoresistive element and use thereof as a memory element in a memory cell configuration |
| 09/27/2001 | US20010024347 Tunnel magnetoresistive element, thin-film magnetic head and memory element, and methods of manufacturing same |
| 09/27/2001 | CA2404296A1 Nanocylinder arrays |
| 09/27/2001 | CA2402850A1 Method and device for transferring spin-polarized charge carriers |
| 09/26/2001 | EP1135772A1 Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor |
| 09/26/2001 | EP1135771A1 Shielded magnetoresistive heads with charge clamp |
| 09/26/2001 | EP1135696A1 Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor |