| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
|---|
| 09/26/2002 | US20020135955 Giant magneto-resistive effect element, magneto-resistive effect type head, thin-film magnetic memory and thin-film magnetic sensor |
| 09/26/2002 | US20020135950 Tunnel magneto-resistive head and manufacturing method thereof |
| 09/26/2002 | US20020135948 Magnetoresistive effect element, its Manufacturing method, magnetic head, magnetic reproducing apparatus, and magnetic memory |
| 09/26/2002 | US20020135947 Magnetoresistive sensor capable of narrowing gap and track width |
| 09/26/2002 | US20020135937 Thin-film magnetic head and method of manufacturing same |
| 09/26/2002 | US20020135018 Thin film magnetic memory device writing data of a plurality of bits in parallel |
| 09/26/2002 | US20020134579 Method and device for avoiding electrostatic discharge of an electronic device by using electroconductive sheet |
| 09/25/2002 | EP1244118A2 Magnetoresistive element and MRAM using the same |
| 09/24/2002 | US6456525 Short-tolerant resistive cross point array |
| 09/24/2002 | US6456523 Ferromagnetic double quantum well tunnel magneto-resistance device |
| 09/24/2002 | US6456468 Magnetoresistance effect element, and magnetoresistance effect sensor and magnetic information recording and playback system using same |
| 09/24/2002 | US6456068 Magnetic impedance element having a highly linear magnetic field detection range |
| 09/24/2002 | US6455178 Exchange coupling film and magnetoresistive element |
| 09/24/2002 | US6455177 Stabilization of GMR devices |
| 09/19/2002 | WO2002073699A2 Nanofabrication |
| 09/19/2002 | WO2002073226A2 Tunnel junction and charge perpendicular-to-plane magnetic recording sensors and method of manufacture |
| 09/19/2002 | US20020132375 Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure |
| 09/19/2002 | US20020131296 Magnetic material memory and information reproducing method of the same |
| 09/19/2002 | US20020131295 MRAM architecture and system |
| 09/19/2002 | US20020131217 Multichannel magnetic head using magnetoresistive effect |
| 09/19/2002 | US20020131215 Tunnel junction and charge perpendicular-to-plane magnetic recording sensors and method of manufacture |
| 09/19/2002 | US20020130339 Magnetoresistance effect device, method of manufacturing the same, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information reproducing apparatus |
| 09/19/2002 | DE10153560A1 Memory arrangement with additional free space for data reading process has approximately constant sum of electrical resistances in reference voltage line and selected bit line |
| 09/19/2002 | CA2451882A1 Nanofabrication |
| 09/18/2002 | CN1369905A Package method for high-correctness high-sensitivity Hall sensor and IC |
| 09/17/2002 | US6452892 Magnetic tunnel device, method of manufacture thereof, and magnetic head |
| 09/17/2002 | US6452764 Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices |
| 09/17/2002 | US6452386 Magnetoresistance effect element, and magnetoresistance effect sensor and magnetic information recording and playback system using same |
| 09/17/2002 | US6452382 Encoder provided with giant magnetoresistive effect elements |
| 09/17/2002 | US6452204 Tunneling magnetoresistance transducer and method for manufacturing the same |
| 09/17/2002 | US6451215 Method of producing magneto-resistive tunnel junction head |
| 09/12/2002 | US20020127743 Method for fabricating cladding layer in top conductor |
| 09/12/2002 | US20020126524 Semiconductor memory apparatus using tunnel magnetic resistance elements |
| 09/12/2002 | US20020126424 Magnetic transducer with integrated charge bleed resistor |
| 09/12/2002 | DE10202103A1 Magneto-resistive element comprises an intermediate layer arranged between a pair of magnetic layers |
| 09/11/2002 | EP1239489A1 Method for fabricating cladding layer in top conductor |
| 09/11/2002 | EP1238119A2 Method and apparatus for smoothing thin conductive films by gas cluster ion beam |
| 09/11/2002 | EP1155287B1 Hall sensor with a reduced offset signal |
| 09/11/2002 | CN1368752A Crossover point memory array containing blocking sneak path current shared equipment |
| 09/11/2002 | CN1368735A 磁存储装置与磁基片 A magnetic storage device and the magnetic substrate |
| 09/10/2002 | US6449133 Magnetoresistance film and magnetic read sensor |
| 09/06/2002 | WO2002069356A1 Compounds having giant magnetoresistance and spin-polarized tunnels, the production thereof and their use |
| 09/06/2002 | WO2002069354A2 Current-responsive resistive component |
| 09/05/2002 | US20020122338 Magnetic random access memory with write and read circuits using magnetic tunnel junction ( MTJ) devices |
| 09/05/2002 | US20020121897 Probe for measuring leakage magnetic field |
| 09/04/2002 | EP1237150A2 Magnetic head of a magnetoresistance type having an underlying layer having a laminated structure of a tungsten-group metal layer formed on a tantalum-group metal layer |
| 09/04/2002 | CN1367544A Magneto-resistance effect element and manufacturing method |
| 09/04/2002 | CN1367481A 磁传感器及其制造方法 Magnetic sensor and manufacturing method thereof |
| 09/03/2002 | US6445613 Magnetic random access memory |
| 09/03/2002 | US6445612 MRAM with midpoint generator reference and method for readout |
| 09/03/2002 | US6445554 Method and system for providing edge-junction TMR for high areal density magnetic recording |
| 09/03/2002 | US6444406 Method for forming photoresist pattern and manufacturing method of magnetoresistive effect thin-film magnetic head |
| 08/29/2002 | WO2002067266A2 Method for writing into magnetoresistive memory cells and magnetoresistive memory which can be written into according to said method |
| 08/29/2002 | WO2002039455A3 Mram arrangement with selection transistors of large channel width |
| 08/29/2002 | US20020119243 Parallel deposition, synthesis and screening of an array of diverse materials at known locations on a single substrate surface |
| 08/29/2002 | DE10164283A1 Magnetspeichervorrichtung und Magnetsubstrat A magnetic memory device and magnet substrate |
| 08/27/2002 | US6442063 Integrated memory having memory cells with magnetoresistive memory effect |
| 08/27/2002 | US6442011 Flux concentration adjustment mechanism and method for hall effect sensors and circuit breaker using same |
| 08/22/2002 | WO2002065609A1 Overload current protection device using magnetic impedance element |
| 08/22/2002 | WO2002065608A1 Overload current protection device using magnetic impedance element |
| 08/22/2002 | US20020114972 Ferromagnetic tunnel junctions with enhanced magneto-resistance |
| 08/22/2002 | US20020114112 Magnetic tunnel element and its manufacturing method, thin-film magnetic head, magnetic memory and magnetic sensor |
| 08/22/2002 | US20020114110 Magnetoresistance-effect magnetic head |
| 08/22/2002 | DE10103868A1 GMR-Struktur und Verfahren zu deren Herstellung GMR structure and process for their preparation |
| 08/21/2002 | EP1232504A1 Method of manufacturing a spin valve structure |
| 08/21/2002 | EP1232400A1 Magnetoresistive angle sensor having several sensing elements |
| 08/21/2002 | CN1365117A Heat auxiliary switching of magnetic random access storage device |
| 08/21/2002 | CN1365007A Device and method for measuring Hull effect |
| 08/20/2002 | US6438026 Magnetic field element having a biasing magnetic layer structure |
| 08/20/2002 | US6436526 Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell |
| 08/15/2002 | US20020109948 Magnetic head of a magnetoresistance type having an underlying layer having a laminated structure of a tungsten-group metal layer formed on a tantalum-group metal layer |
| 08/15/2002 | US20020109172 Nonvolatile magnetic storage device |
| 08/15/2002 | US20020109167 Memory device and method of fabrication thereof |
| 08/14/2002 | EP1231607A2 Nonvolatile magnetic storage device |
| 08/14/2002 | EP1230558A1 Hall-sensor component |
| 08/14/2002 | EP1230557A1 Offset-reduced Hall element |
| 08/14/2002 | CN1364300A Magnetic field element having a biasing magnetic layer structure |
| 08/14/2002 | CN1363955A Semiconductor storaging device |
| 08/13/2002 | US6433972 Multilayer; nonmagnetic support, ferromagnetic layer |
| 08/13/2002 | US6433545 Method for evaluating signals of magnetoresistive sensors with high band width |
| 08/08/2002 | WO2002061752A2 Mram architecture and system |
| 08/08/2002 | WO2002061446A1 Gmr structure and method for the production thereof |
| 08/08/2002 | WO2002060981A1 Glass epoxy board and magnetic head device |
| 08/08/2002 | US20020105827 Three-layered stacked magnetic spin polarisation device with memory, using such a device |
| 08/08/2002 | US20020105823 Magnetic spin polarisation and magnetisation rotation device with memory and writing process, using such a device |
| 08/07/2002 | CN1362709A 磁随机存取存储器 Magnetic random access memory |
| 08/07/2002 | CN1088917C Magnetoresistive element and sensor |
| 08/06/2002 | US6429498 Sensor for measuring a magnetic field |
| 08/06/2002 | US6429497 Method for improving breakdown voltage in magnetic tunnel junctions |
| 08/06/2002 | CA2252926C All-metal, giant magnetoresistive, solid-state component |
| 08/01/2002 | WO2002045090A3 Circuit for non-destructive, self-normalizing reading-out of mram memory cells |
| 08/01/2002 | US20020102436 Free layer, whose magnetized direction is changed according to an external magnetic field, and a pin layer, whose magnetized direction is unchanged, are laminated through an insulative layer, and to a magnetic head |
| 08/01/2002 | US20020101760 Mram architecture and system |
| 08/01/2002 | US20020101691 Magnetic sensor with reduced wing region magnetic sensitivity |
| 08/01/2002 | US20020101689 High sensitivity spin valve stacks using oxygen in spacer layer deposition |
| 08/01/2002 | US20020101328 Magnetoresistance effect element and method for producing same |
| 07/31/2002 | EP1227526A2 Magnetic sensor and method of producing the same |
| 07/31/2002 | EP1227495A2 Information storage device |
| 07/31/2002 | EP1227494A2 Magnetic random access memory |
| 07/31/2002 | CN1361535A 磁随机存取存储器 Magnetic random access memory |