H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof

Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
12/2002
12/17/2002	US6496004 Magnetic field sensor using magneto-resistance of ferromagnetic layers with parallel magnetic axes
12/17/2002	US6495873 Magnetoresistive element and use thereof as a memory element in a memory cell configuration
12/17/2002	US6493926 Bi-layer lift-off process for high track density GMR head
12/12/2002	WO2002099905A1 Tunnel magnetoresistance element
12/12/2002	WO2002099451A2 Semimanufacture for a sensor for measuring a magnetic field
12/12/2002	US20020187430 Method of forming patterned thin film and method of fabricating micro device
12/12/2002	US20020186583 Recessed magnetic storage element and method of formation
12/12/2002	US20020186582 Cladded read conductor for a pinned-on-the-fly soft reference layer
12/12/2002	US20020186011 Magnetic sensor and manufacturing method therefor
12/12/2002	US20020186010 Hall-sensor component
12/12/2002	US20020185196 Magnetic tunneling junction and fabrication method thereof
12/12/2002	DE10160637A1 Fahrzeugmontiertes Magnetoresistenz-Sensorelement Vehicle Mount magnetoresistive sensor element
12/12/2002	DE10128154A1 Digital magnetic storage cell arrangement used for reading and writing operations comprises a soft magnetic reading and/or writing layer system, and a hard magnetic reference layer system formed as an AAF system
12/11/2002	EP1265249A2 Magneto-resistance effect film and memory using it
12/11/2002	EP1163676B1 Storage cell array and method for the production thereof
12/11/2002	CN1384545A Semiconductor memory device and its manufacture
12/10/2002	US6492697 Hall-effect element with integrated offset control and method for operating hall-effect element to reduce null offset
12/05/2002	WO2002097464A2 Compensating a sensor for measuring a magnetic field
12/05/2002	US20020181275 Data register and access method thereof
12/05/2002	US20020181173 Magnetoresistive head and manufacturing method therefor
12/05/2002	US20020181170 Trilayer seed layer structure for spin valve sensor
12/05/2002	US20020181168 Read head with tunnel junction sensor and non-shunting hard bias stabilization
12/05/2002	US20020180433 Method of orienting an axis of magnetization of a first magnetic element with respect to a second magnetic element, semimanufacture for obtaining a sensor, sensor for measuring a magnetic field
12/05/2002	US20020180432 Transpinnor-based switch and applications
12/05/2002	US20020180430 Fixture for plate type magnetic resistance sensor chip element
12/05/2002	DE10125594A1 Halbleiterspeichereinrichtung sowie Verfahren zu deren Herstellung A semiconductor memory device, as well as processes for their preparation
12/05/2002	DE10125425A1 Vorrichtung zur Messung einer B-Komponente eines Magnetfeldes, Magnetfeldsensor und Strommesser Apparatus for measuring a B-component of a magnetic field, magnetic field sensor, and flow meter
12/04/2002	EP1262993A2 Mram memory array
12/04/2002	EP1262992A2 Magnetic recording element, magnetic memory, magnetic recording method, method for fabricating a magnetic recording element, and method for fabricating a magnetic memory
12/04/2002	EP1262957A2 Magnetoresistive head and manufacturing method therefor
12/04/2002	EP1261843A1 Measuring device for contactlessly detecting a ferromagnetic object
12/04/2002	CN1383208A Semiconductor device and its mfg. method
12/04/2002	CN1383155A Thin film magnet memory able to stable read out datas and write in datas
12/04/2002	CN1383154A Multifunctional serial entry/output circuit
12/03/2002	US6490217 Select line architecture for magnetic random access memories
12/03/2002	US6490190 Memory cell configuration, magnetic ram, and associative memory
11/2002
11/28/2002	WO2002095794A2 Semiconductor memory device and method for the production thereof
11/28/2002	WO2002095433A2 Device for measuring a b-component of a magnetic field, a magnetic field sensor and an ammeter
11/28/2002	WO2002095423A2 Device for measuring a b-component of a magnetic field, a magnetic field sensor and an ammeter
11/28/2002	WO2002095330A1 Azimuth meter
11/28/2002	WO2001045141A9 Method and apparatus for smoothing thin conductive films by gas cluster ion beam
11/28/2002	US20020177013 Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film
11/28/2002	US20020176277 Magnetic memory device
11/28/2002	US20020176272 Select line architecture for magnetic random access memories
11/28/2002	US20020176213 Magnetoresistive head
11/28/2002	US20020175803 Vehicle-mounted magnetoresistive sensor element
11/28/2002	US20020175679 Apparatus and method for measuring Hall effect
11/28/2002	US20020175386 Magnetic random access memory using bipolar junction transistor, and method for fabricating the same
11/28/2002	US20020175357 Magnetic random access memory using bipolar junction transistor, and method for fabricating the same
11/28/2002	DE10123593A1 Magnetic memory arrangement has second supply device that sets current direction according to information to be written, first current supply device that changes current direction
11/28/2002	DE10123332A1 Thin film magnetic memory device e.g. MRAM enables adjacent magnetic memory cells to share mutual write word lines that are selectively activated based on row selection result
11/27/2002	EP1259832A1 Assembly for measuring a magnetic field, using a bridge circuit of spin tunnel elements and a production method for the same
11/27/2002	CN1382261A Spin-valve sensor
11/27/2002	CN1381909A Method for modifying spin valve with surfactant
11/26/2002	US6487110 Nonvolatile solid-state memory device using magnetoresistive effect and recording and reproducing method of the same
11/26/2002	US6487108 MRAM configuration
11/26/2002	US6485989 MRAM sense layer isolation
11/21/2002	WO2002093661A1 Magnetoresistive element
11/21/2002	WO2002093581A2 Magnetic memory arrangement
11/21/2002	US20020173941 Method and system for finite element modeling and simulation of enhanced magnetoresistance in thin film semiconductors with metallic inclusions
11/21/2002	US20020172840 Giant magneto-resistive effect element, magneto-resistive effect type head, thin-film magnetic memory and thin-film magnetic sensor
11/21/2002	US20020172073 Thin film magnetic memory device capable of conducting stable data read and write operations
11/21/2002	US20020172000 Sensor and method for the manufacture thereof
11/21/2002	DE10114197C1 Tunnel magnetoresistive sensor element for external magnetic field measurement has soft magnetic measuring layer separated by tunnel barrier from hard magnetic reference layer or reference layer system
11/20/2002	EP1258930A2 Magnetic tunneling junction and fabrication method thereof
11/19/2002	US6483768 Current driver configuration for MRAM
11/19/2002	US6483741 Magnetization drive method, magnetic functional device, and magnetic apparatus
11/19/2002	US6483740 All metal giant magnetoresistive memory
11/19/2002	US6483734 Memory device having memory cells capable of four states
11/19/2002	US6483677 Magnetic disk apparatus including magnetic head having multilayered reproducing element using tunneling effect
11/19/2002	US6483675 Tunnel magnetoresistance effect element
11/19/2002	US6483674 Spin valve head, production process thereof and magnetic disk device
11/19/2002	US6482729 Method of generating spin-polarized conduction electron and semiconductor device
11/19/2002	US6482657 Methods of manufacturing tunnel magnetoresistive element, thin-film magnetic head and memory element
11/19/2002	US6482329 Method for manufacturing magnetoresistance element
11/14/2002	WO2002078057A3 A transpinnor-based sample-and-hold circuit and applications
11/14/2002	WO2002075344A3 Semiconductor element comprising a semimagnetic contact
11/14/2002	WO2002073699A3 Nanofabrication
11/14/2002	US20020167766 Magnetoresistive element and device utilizing magnetoresistance effect
11/14/2002	US20020167765 Thin-film magnetic head having magnetic resistance effect element
11/14/2002	US20020167033 Magnetic memory and method of operation thereof
11/13/2002	EP1256958A2 Multibit magnetic memory and method of operation thereof
11/13/2002	CN1379485A Cladding read out conducting wire for dynamic pinning soft reference layer
11/13/2002	CN1379473A Semiconductor storage device
11/13/2002	CN1379472A Semiconductor storage device
11/13/2002	CN1379408A Embracing layer read/wright conductor of soft reference layer fixed in operation
11/12/2002	US6480412 Magnetization control method, information storage method, magnetic functional device, and information storage device
11/12/2002	US6480411 Magnetoresistance effect type memory, and method and device for reproducing information from the memory
11/12/2002	US6479848 Magnetic random access memory with write and read circuits using magnetic tunnel junction (MTJ) devices
11/12/2002	US6479353 Reference layer structure in a magnetic storage cell
11/07/2002	WO2002089187A2 An improved method for forming minimally spaced mram structures
11/07/2002	WO2002088765A1 Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same
11/07/2002	WO2001099099A3 Magnetic multilayer structure with improved magnetic field range
11/07/2002	WO2001071777A3 Method of fabricating flux concentrating layer for use with magnetoresistive random access memories
11/07/2002	WO2001025807A3 Integrated on-board device and method for the protection of magn etoresistive heads from electrostatic discharge
11/07/2002	US20020164828 Sputtering a first ferromagnetic layer, growing a conductive layer on the ferromagnetic layer, oxidizing conductive lyaer to form a tunnel barrier layer of oxide on conductive layer, growing a second ferromagnetic layer on the oxide
11/07/2002	US20020163766 Current-perpendicular-to-the-plane structure magnetoresistive element and method of making same
11/07/2002	US20020163764 Tunneling magnetoresistive device and method for manufacturing the same
11/07/2002	DE10215117A1 Thin film magnetic memory suitable for stable data read-out and writing
11/05/2002	US6477077 Non-volatile memory device

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