Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
07/2001
07/03/2001US6256176 Highly sensitive spin valve heads using a self-aligned demag-field balance element
06/2001
06/28/2001US20010005301 Spin tunnel magneto-resistance effect type magnetic sensor and production method thereof
06/27/2001EP1111693A2 Large current detector having a Hall-effect device
06/26/2001US6252796 Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer
06/26/2001US6252741 Thin film magnetic recording head with treated ceramic substrate
06/26/2001US6252390 Magnetically coupled signal isolator
06/21/2001WO2001045141A2 Method and apparatus for smoothing thin conductive films by gas cluster ion beam
06/20/2001EP1109169A2 MRAM having semiconductor device integrated therein
06/20/2001EP1109168A2 Magnetic dual element with dual magnetic states and fabricating method thereof
06/20/2001EP1108257A1 An mram cell requiring low switching field
06/20/2001EP0710390B1 Magnetic structure with stratified layers
06/20/2001CN1300077A MRAM with integrated semiconducter device
06/19/2001US6249407 Magnetoresistive device having a tantalum layer connected to a shielding layer via a layer of a body-centered cubic structure
06/13/2001EP1107328A2 Current detector having a hall-effect device
06/13/2001EP1107327A2 Semiconductor current detector of improved noise immunity
06/13/2001EP1107258A1 Multibit MTJ stacked cell memory sensing method and apparatus
06/13/2001EP1105890A1 Magnetoresistive element and the use thereof as storage element in a storage cell array
06/13/2001EP1105879A1 Mram array having a plurality of memory banks
06/13/2001EP1105878A2 Storage cell array and corresponding production method
06/13/2001EP1105743A1 Method for manufacturing a magnetic sensor device
06/12/2001US6246553 Shielded magnetoresistive head with charge clamp
06/12/2001US6246234 Magnetic detector with improved temperature characteristic and noise resistance
06/12/2001US6245450 Multilayer exchange coupling films
06/07/2001WO2001041214A1 Extraordinary magnetoresistance at room temperature in inhomogeneous narrow-gap semiconductors
05/2001
05/31/2001DE10053755A1 Magnetic resistance chip contains indium antimonide with n-type doping level with donor atom concentration in specified range and in form of epitaxial film on gallium arsenide substrate
05/30/2001EP1103079A1 Magnetic tunnel junction device having an intermediate layer
05/30/2001CN1297533A Magnetic sensor and its production method, ferromagnetic tunnel junction device and its production method, and magnetic head using same
05/29/2001US6238531 Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system
05/23/2001EP1101125A1 Method for evaluating signals of magnetoresistive sensors
05/23/2001DE19954360A1 Hall-Element Hall element
05/23/2001CN1066277C Device and method for detecting magnetic field
05/22/2001US6236590 Optimal write conductors layout for improved performance in MRAM
05/17/2001WO2001035113A1 Offset-reduced hall element
05/16/2001EP1099221A2 Magnetoresistive memory with low current density
05/16/2001CN1295332A MRAM device having digital detection amplifier
05/15/2001US6233172 Magnetic element with dual magnetic states and fabrication method thereof
05/15/2001US6232777 Tunneling magnetoresistive element and magnetic sensor using the same
05/10/2001WO2000052424A8 Hall sensor with a reduced offset signal
05/10/2001WO2000007033A9 Method for evaluating signals of magnetoresistive sensors
05/10/2001DE19949713A1 Magnetoresistive layer system for giant magnetoresistive or tunnel magnetoresistive sensor or magnetic storage element, has structured surface in reference layer to prevent influence of external fields
05/09/2001EP1098203A2 Magnetic tunnel junction element, tunneling magnetoresistive head, and production methods
05/09/2001CN1294390A Field response reinforced magnetic component and its mfg. method
05/08/2001US6228440 Perishable media information storage mechanism and method of fabrication
05/03/2001WO2001031357A1 Spin-valve sensor
05/03/2001DE19946935A1 Vorrichtung zur Strommessung mit magnetfeldempfindlichen Differenzsensoren aus mindestens zwei Hallsensoren A device for current measurement by magnetic field-sensitive sensors difference of at least two Hall sensors
05/02/2001EP1096501A1 MRAM Device with sense amplifiers
05/02/2001EP1096500A1 Magnetization control method, information storage method, magnetic functional device, and information storage device
05/02/2001EP1096478A2 Trilayer seed layer structure for spin valve sensor
05/01/2001US6226197 Magnetic thin film memory, method of writing information in it, and me
05/01/2001US6226159 Multilayered pinned layer of cobalt based films separated by a nickel base film for improved coupling field and GMR for spin valve sensors
04/2001
04/26/2001WO2001029831A1 Magnetic recording device, method of adjusting magnetic head and magnetic recording medium
04/25/2001EP1094329A2 Magnetic element with improved field response and fabricative method thereof
04/25/2001EP1093587A2 Method for regulating the magnetization of the bias layer of a magnetoresistive sensor element, sensor element or sensor element system processed according to said method and sensor element and sensor substrate suitable for the implementation of said method
04/24/2001US6221518 Multilayer films
04/19/2001DE19946490A1 Magnetoresistiver Schreib/Lese-Speicher sowie Verfahren zum Beschreiben und Auslesen eines solchen Speichers A magnetoresistive read / write memory as well as methods for writing and reading out of such a memory
04/18/2001EP1068541A4 Magnetic digital signal coupler
04/17/2001US6219275 Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element
04/17/2001US6219274 Ferromagnetic tunnel magnetoresistance effect element and method of producing the same
04/12/2001WO2001025807A2 Integrated on-board device and method for the protection of magn etoresistive heads from electrostatic discharge
04/12/2001DE19943128A1 Hall-Sensoranordnung zur Offset-kompensierten Magnetfeldmessung Hall sensor array for offset-compensated magnetic field measurement
04/11/2001EP1091425A2 Hall-effect sensor and integrated circuit comprising such a sensor
04/10/2001US6215696 Ferromagnetic tunnel junction device and method of forming the same
04/10/2001US6215631 Magnetoresistive effect film and manufacturing method therefor
04/10/2001US6215301 Magnetoresistive detector comprising a layer structure and a current directing means
04/08/2001CA2323131A1 Hall-effect sensor and integrated circuit including such a sensor
04/05/2001WO2001024289A1 Magnetoresistance effect memory device and method for producing the same
04/05/2001WO2001024190A1 Polyvalent, magnetoresistive write/read memory and method for writing and reading a memory of this type
04/05/2001WO2001023899A1 Device for measuring current comprising differential sensors which are sensitive to magnetic fields and which are comprised of at least two hall sensors
04/04/2001CN1064132C Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
04/03/2001US6211090 Method of fabricating flux concentrating layer for use with magnetoresistive random access memories
04/03/2001US6210818 Magnetoresistive element
04/03/2001US6210810 Magnetoresistance device
03/2001
03/27/2001US6208492 Seed layer structure for spin valve sensor
03/22/2001WO2001020356A1 Magnetoresistive sensor or memory elements with decreased magnetic switch field
03/21/2001EP1085586A2 Magnetoresistive element and magnetic memory device
03/20/2001US6205073 Current conveyor and method for readout of MTJ memories
03/20/2001US6205053 Magnetically stable magnetoresistive memory element
03/20/2001US6205052 Magnetic element with improved field response and fabricating method thereof
03/20/2001US6205008 Magnetic-resistance device, and magnetic head employing such a device
03/20/2001US6204662 Magnetic field sensing element with processing circuit and input and output side resistors formed from same metal film
03/15/2001WO2001018816A1 Memory cell arrangement and operational method therefor
03/15/2001WO2001018556A1 Hall sensor array for measuring a magnetic field with offset compensation
03/15/2001DE19942447A1 Speicherzellenanordnung und Verfahren zu deren Betrieb Memory cell arrangement and method of operation
03/14/2001EP1082725A1 Magnetoresistive random access memory and method for reading/writing digital information to such a memory
03/14/2001EP1002236A4 Magnetic field sensor
03/13/2001US6201671 Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor
03/13/2001US6201669 Magnetoresistive element and its manufacturing method
03/13/2001US6201466 Magnetoresistor array
03/13/2001US6201465 Magnetoresistive sensor and its manufacturing method
03/13/2001US6201259 Tunneling magnetoresistance element, and magnetic sensor, magnetic head and magnetic memory using the element
03/06/2001US6198610 Magnetoresistive device and magnetoresistive head
03/06/2001US6198608 Magnetoresistive (mr) sensor has a read gap that is made of a slow ion milling rate material which allows a blunt end to be formed without overmilling into the read gap
03/06/2001US6198378 Magnetoresisitive sensor and manufacturing method therefor
03/06/2001US6198276 Ferromagnetic-ball sensor using a magnetic field detection element
03/01/2001WO2001015110A1 Magnetic sensor
02/2001
02/28/2001CN1062670C Granular multilayer magnetoresistive sensor mfg. method
02/27/2001US6193584 Apparatus and method of device stripe height control
02/22/2001WO2001013387A1 Method for producing a magnetic tunnel contact and magnetic tunnel contact
02/22/2001DE19938215A1 Verfahren zur Herstellung eines magnetischen Tunnelkontakts sowie magnetischer Tunnelkontakt A method of manufacturing a magnetic tunnel junction and a magnetic tunnel junction
02/21/2001EP1076924A1 Vertical hall effect sensor and brushless electric motor with a vertical hall effect sensor