H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof

Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
11/2002
11/05/2002	US6475812 Method for fabricating cladding layer in top conductor
11/05/2002	US6475649 Magnetic head
10/2002
10/31/2002	WO2002086871A1 Non-magnetic metallic layer in a reader gap of a disc drive
10/31/2002	WO2002086184A1 Manganese alloy sputtering target and method for producing the same
10/31/2002	US20020160541 Method for forming minimally spaced MRAM structures
10/31/2002	US20020159206 Magnetoresistive device and method of manufacturing same, thin-film magnetic head and method of manufacturing same, head gimbal assembly and hard disk drive
10/31/2002	US20020159204 Magnetic heads using a tunneling magnetoresistance effect
10/31/2002	US20020159203 Magnetoresistance effect element
10/31/2002	US20020159202 Electron device
10/31/2002	US20020159201 Current perpendicular-to-the-plane magnetoresistance read head
10/31/2002	US20020158342 Nanofabrication
10/31/2002	US20020157238 Method of manufacturing magnetoresistive device and method of manufacturing thin-film magnetic head
10/30/2002	EP1253652A2 Semiconductor memory device including memory cell portion and peripheral circuit portion
10/30/2002	EP1253651A2 Semiconductor memory device using magneto resistive effect element
10/29/2002	US6473337 Memory device having memory cells with magnetic tunnel junction and tunnel junction in series
10/29/2002	US6473335 MRAM configuration
10/29/2002	US6473257 Method and apparatus for measuring characteristics of ferromagnetic tunnel magnetoresistance effect element, and hard disk drive
10/24/2002	WO2002084755A2 Keepers for mram electrodes
10/24/2002	WO2002084706A2 Integrated magnetoresistive semiconductor memory arrangement
10/24/2002	WO2002084705A2 Method for operating an mram semiconductor memory arrangement
10/24/2002	WO2002084680A1 Method for defining reference magnetizations in layer systems
10/24/2002	WO2002061752A3 Mram architecture and system
10/24/2002	US20020155627 Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect
10/24/2002	US20020154537 Memory cell configuration and method for operating the configuration
10/24/2002	US20020154536 Multi-function serial I/O circuit
10/24/2002	US20020154457 Top spin valve heads for ultra-high recording density
10/24/2002	US20020154455 Magnetic device with a coupling layer and method of manufacturing and operation of such device
10/24/2002	US20020154453 Current-perpendicular-to-the-plane structure electromagnetic transducer element having reduced path for electric current
10/24/2002	US20020153881 Magnetic field sensing element and device having magnetoresistance element and integrated circuit formed on the same substrate
10/24/2002	US20020153580 Semiconductor memory device using megneto resistive element and method of manufacturing the same
10/24/2002	US20020153547 Semiconductor memory device including magneto resistive element and method of fabricating the same
10/24/2002	DE10215506A1 Specifying reference magnetizations in layer systems e.g. in magnetoresistive sensor elements, involves applying hard and/or soft magnetic layer to antiferromagnetic layer(s) before, during or after single- or multi-stage heating
10/24/2002	DE10118197A1 Integrated magnetoresistive semiconducting memory arrangement has third conductor plane occupied by write selection lines and spatially and electrically separate from first two read planes
10/24/2002	DE10118196A1 Operating MRAM semiconducting memory involves subjecting memory cell to transient reversible magnetic change while reading information, comparing changed/original current signals
10/23/2002	EP1251570A2 Method of fabricating magnetic random access memory based on tunnel magnetroresistance effect
10/23/2002	EP1251520A2 Random access memory
10/23/2002	EP1251519A1 Semiconductor memory device using magneto resistive element and method of manufacturing the same
10/23/2002	CN1376299A Polyvalent, magnetoresistive write/read memory and method for writing and reading a memory of this type
10/22/2002	US6469927 Magnetoresistive trimming of GMR circuits
10/22/2002	US6469926 Magnetic element with an improved magnetoresistance ratio and fabricating method thereof
10/22/2002	US6469879 Magneto-resistive tunnel junction head with biasing elements abutting free layer extended portions
10/17/2002	WO2002067266A3 Method for writing into magnetoresistive memory cells and magnetoresistive memory which can be written into according to said method
10/17/2002	WO2002039455A8 Mram arrangement with selection transistors of large channel width
10/17/2002	US20020150791 Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus
10/17/2002	US20020150675 Multilayer stacks; ferromagnetic materials; buffer, spacer; magnetic hardening
10/17/2002	US20020149962 Magnetic random access memory
10/17/2002	US20020149887 Magnetoresistive effective type element, thin film magnetic head, magnetic head device and magnetic disk driving device which use said magnetoresistive effective type element
10/17/2002	US20020149358 Angle sensor and method of increasing the anisotropic field strength of a sensor unit of an angle sensor
10/17/2002	US20020148105 Novel bi-layer lift-off process for high track density GMR head
10/17/2002	DE10118650A1 Winkelsensor sowie Verfahren zum Erhöhen der Anisotropiefeldstärke einer Sensoreinheit eines Winkelsensors Angle sensor and method for increasing the anisotropy field of a sensor unit of an angle sensor
10/16/2002	EP1249686A2 Angle sensor and method for increasing the anisotropic fieldstrength of the sensor unit of an angle sensor
10/16/2002	EP1004033B1 Magnetic field sensing device
10/16/2002	CN1374691A Method for producing top conductor covering
10/15/2002	US6466475 Uniform magnetic environment for cells in an MRAM array
10/15/2002	US6466471 Low power MRAM memory array
10/15/2002	US6466418 Bottom spin valves with continuous spacer exchange (or hard) bias
10/15/2002	US6466012 MI element made of thin film magnetic material
10/15/2002	US6465262 Method for manufacturing a semiconductor device
10/15/2002	US6465053 Method for manufacturing a magnetic device
10/10/2002	US20020146851 Method of forming magnetic memory
10/10/2002	US20020146580 Magnetic devices using nanocomposite materials
10/10/2002	US20020145902 Magnetic memory device and magnetic substrate
10/10/2002	US20020145834 Thin film magnetoresistive head with heat treated or oxygen treated insulative film
10/10/2002	DE10116019A1 Sensor sowie Verfahren zu dessen Herstellung Sensor and method for its production
10/09/2002	EP1248305A2 Method of forming magnetic memory
10/09/2002	EP1248273A2 Cladded read conductor for a tunnel junction memory cell
10/09/2002	EP1248265A2 Magnetic memory cell
10/09/2002	CN1373479A High data read-out allowance memory for storing data using change of resistance quantity
10/08/2002	US6462982 Magnetic random access memory having voltage control circuitry for maintaining sense lines at constant low voltages
10/08/2002	US6462981 Magnetic random access memory
10/08/2002	US6462980 MRAM memory with drive logic arrangement
10/08/2002	US6462641 Magnetoresistor with tunnel effect and magnetic sensor using same
10/08/2002	US6462531 Current detector having a hall-effect device
10/08/2002	US6461737 Epitaxial compound structure and device comprising same
10/03/2002	WO2002078100A1 A transpinnor-based switch and applications
10/03/2002	WO2002078057A2 A transpinnor-based sample-and-hold circuit and applications
10/03/2002	WO2000007191A3 Method to write/read mram arrays
10/03/2002	US20020142490 Magnetic sensor and method of producing the same
10/03/2002	US20020142192 Method of patterning magnetic products using chemical reactions
10/03/2002	US20020141233 Semiconductor memory device including memory cell portion and peripheral circuit portion
10/03/2002	US20020141231 Magnetic random-access memory
10/03/2002	US20020141119 Thin-film magnetic head having ensured insulation between shield and magnetic detecting element
10/03/2002	US20020141118 Magnetic head and production method for magnetic heads
10/03/2002	US20020140060 Semiconductor memory device using magneto resistive effect element
10/03/2002	US20020140016 Magnetic random access memory having a transistor of vertical structure and the method thereof
10/03/2002	US20020140000 Magnetic random access memory
10/03/2002	US20020138970 Method of accurate evaluation on magnetoresistive read element
10/02/2002	EP1246168A2 Tunnel magneto-resistive head and manufacturing method thereof
10/02/2002	EP1135771B1 Shielded magnetoresistive heads with charge clamp
10/02/2002	EP1082725B1 Magnetoresistive random access memory and method for reading/writing digital information to such a memory
10/02/2002	DE10114963A1 Halbleiterelement mit einem semimagnetischen Kontakt Semiconductor element with a semi-magnetic contact
10/02/2002	DE10110292C1 Stromabhängiges resistives Bauelement Current-dependent resistive component
10/02/2002	CN1372688A Magnetic device with a coupling layer and method of manufacturing and operation of such device
10/02/2002	CN1372687A Memory cell arrangement and operational method therefor
10/02/2002	CN1372335A Process for preparing solid oxide giant magnet electric resistance material
10/01/2002	US6458603 Method of fabricating a micro-technical structure, and micro-technical component
09/2002
09/26/2002	WO2002075782A2 Self-aligned, trenchless magnetoresistive random-access memory (mram) structure with sidewall containment of mram structure
09/26/2002	WO2002075344A2 Semiconductor element comprising a semimagnetic contact
09/26/2002	WO2001074139A3 Hall-effect element with integrated offset control and method for operating hall-effect element to reduce null offset
09/26/2002	US20020136053 Non-volatile memory device

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