| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 01/21/2003 | US6510078 Memory cell array and method for manufacturing it |
| 01/21/2003 | US6509621 Magnetic random access memory capable of writing information with reduced electric current |
| 01/16/2003 | WO2002054407A3 Mram write apparatus and method |
| 01/16/2003 | WO2002029819A3 An analog functional module using magnetoresistive memory technology |
| 01/16/2003 | WO2002009151A3 Magnetoresistive structure |
| 01/16/2003 | US20030012050 Method for magnetic characteristics modulation and magnetically functioning apparatus |
| 01/16/2003 | US20030011945 Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus |
| 01/16/2003 | US20030011944 Magneto-resistive effect element, magnetic sensor using magneto-resistive effect, magnetic head using magneto-resistive effect and magnetic memory |
| 01/16/2003 | US20030011941 Spin-valve type magnetoresistive element and its manufacturing method |
| 01/16/2003 | US20030011940 Magnetic head and magnetic reproducing apparatus |
| 01/16/2003 | US20030011463 Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus |
| 01/16/2003 | US20030011459 Magnetic sensing element having improved magnetic sensitivity |
| 01/16/2003 | US20030011364 Magneto-resistive effect element, magnetic sensor using magneto-resistive effect, magnetic head using magneto-resistive effect and magnetic memory |
| 01/16/2003 | US20030011361 Method and program for calculating reproduction track width of magnetoresistive effect head |
| 01/15/2003 | CN1391294A Magnetic resistance effect film and memory therewith |
| 01/14/2003 | US6507513 Using delayed electrical pulses with magneto-resistive devices |
| 01/14/2003 | US6507512 Circuit configuration and method for accelerating aging in an MRAM |
| 01/14/2003 | US6506328 Process for producing an electronic component |
| 01/14/2003 | US6505513 Arrangement for measuring rotational velocity |
| 01/09/2003 | WO2001025807A8 Integrated on-board device and method for the protection of magn etoresistive heads from electrostatic discharge |
| 01/09/2003 | US20030008416 Magnetoresistive device and method of producing the same |
| 01/09/2003 | US20030007295 Magnetoresistive effective type element, method for fabricating the same, thin film magnetic head, magnetic head device and magnetic disk drive device |
| 01/09/2003 | US20030006764 Tunneling magnetoresistive effect device and direction sensor system using said device |
| 01/09/2003 | US20030005575 Manufacturing method of magnetoresistive effect sensor and manufacturing method of thin-film magnetic head |
| 01/08/2003 | EP1274089A2 GMR module |
| 01/08/2003 | EP1273009A2 Current conveyor and method for readout of mtj memories |
| 01/08/2003 | CN1389936A Method for making plate-type magnetic-resistance sensing piece element |
| 01/08/2003 | CN1389935A Fixing device of plate-type magnetic-resistance sensing element |
| 01/07/2003 | US6504752 Magnetic random access memory |
| 01/07/2003 | US6504751 Integrated memory having memory cells with a magnetoresistive storage property and method of operating such a memory |
| 01/07/2003 | US6504690 Spin-tunnel magneto-resistance type magnetic sensor |
| 01/07/2003 | US6504688 Magnetoresistive sensor capable of providing strong exchange coupling magnetic field, and thin-film magnetic head using the same |
| 01/07/2003 | US6504469 Grain boundary formed at a misorientation angle; colossal magnetoresistive (CMR) properties |
| 01/07/2003 | US6504221 Magneto-resistive device including soft reference layer having embedded conductors |
| 01/07/2003 | US6504197 Magnetic memory element and magnetic memory using the same |
| 01/03/2003 | WO2003001614A1 Magnetoresistive device and its producing method |
| 01/03/2003 | WO2003001513A1 Spin valve sensor with a metal and metal oxide cap layer structure |
| 01/03/2003 | WO2002025749A3 Magnetic layer system and a component comprising such a layer system |
| 01/02/2003 | US20030003675 Shared bit line cross point memory array |
| 01/02/2003 | US20030003674 Electrically programmable resistance cross point memory |
| 01/02/2003 | US20030002333 Thin film magnetic memory device with memory cells including a tunnel magnetic resistive element |
| 01/02/2003 | US20030002330 Magnetoresistive element and MRAM using the same |
| 01/02/2003 | US20030002228 Magnetic head |
| 01/02/2003 | US20030002213 Glass epoxy board and magnetic head device |
| 01/02/2003 | US20030001705 Combination switch |
| 01/02/2003 | US20030001559 Hall-effect current detector |
| 01/02/2003 | US20030001274 Structure having pores and its manufacturing method |
| 01/02/2003 | US20030001178 Low cross-talk electrically programmable resistance cross point memory |
| 01/02/2003 | EP1271546A2 Resitive crosspoint memory array |
| 01/02/2003 | EP1271159A2 Hall-effect current detector |
| 01/02/2003 | EP1270328A2 Combination switch |
| 01/02/2003 | EP1269552A2 Hall-effect element with integrated offset control and method for operating hall-effect element to reduce null offset |
| 01/02/2003 | EP1269492A1 Magnetic element with an improved magnetoresistance ratio |
| 01/02/2003 | EP1269491A2 Multi-layer tunneling device with a graded stoichiometry insulating layer |
| 01/02/2003 | EP1268087A2 Nanocylinder arrays |
| 01/01/2003 | CN1388972A 磁存储器 Magnetic memory |
| 01/01/2003 | CN1388901A Magnetoresistive angle sensor having several sensing elements |
| 01/01/2003 | CN1388533A 低功率mram存储器阵列 Low-power memory array mram |
| 01/01/2003 | CN1388088A Ferroelectric-ferromagnetic functional complex in three-layer perovskite-like structure and its prepn |
| 12/31/2002 | US6501686 Electronic driver circuit for word lines in a memory matrix, and memory apparatus |
| 12/31/2002 | US6501679 Thin film magnetic device including memory cells having a magnetic tunnel junction |
| 12/31/2002 | US6501678 Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems |
| 12/31/2002 | US6501271 Free and a pinned ferromagnetic layer, resistant to heat and strong magnetic fields; combination of an artificial anti-ferromagnet as the pinned layer and an alloy of iridium and manganese (irmn) exchange-biasing layer; wheatstone bridge |
| 12/31/2002 | US6501270 Hall effect sensor assembly with cavities for integrated capacitors |
| 12/31/2002 | US6501143 Spin-valve transistor |
| 12/31/2002 | US6500570 Multilayer; antiferromagnetic layer, magnetic layer, nonmagnetic layer |
| 12/27/2002 | WO2002047089A3 Magnetoresistive memory and method for reading out from the same |
| 12/26/2002 | US20020196658 Magnetic recording element, magnetic memory, magnetic recording method, method for a fabricating a magnetic recording element, and method for a fabricating a magnetic memory |
| 12/26/2002 | US20020196657 Magnetic memory device in which influence of adjacent memory cell is controllable |
| 12/26/2002 | US20020196647 Resistive cross point array of short-tolerant memory cells |
| 12/26/2002 | US20020196591 Method of depositing thin films for magnetic heads |
| 12/26/2002 | US20020196589 Spin valve sensor with a metal and metal oxide cap layer structure |
| 12/26/2002 | US20020196583 Method of making a spin valve sensor with a controlled ferromagnetic coupling field |
| 12/26/2002 | US20020195630 Semiconductor device |
| 12/25/2002 | CN1387195A Magnetic recording element, magnetic memory, magnetic recording method, and method for mfg. magnetic recording element and method for mfg. magnetic memory |
| 12/24/2002 | US6498707 Giant magnetoresistive sensor with a CrMnPt pinning layer and a NiFeCr seed layer |
| 12/19/2002 | WO2002101845A2 Method for mass production of a plurality of magnetic sensors |
| 12/19/2002 | WO2002101750A2 Digital magnetic storage cell device |
| 12/19/2002 | WO2002101406A1 Magneto-resistive layer arrangement and gradiometer with said layer arrangement |
| 12/19/2002 | WO2002101396A1 Magnetic sensor |
| 12/19/2002 | WO2002039454A3 Magnetoresistive memory (mram) |
| 12/19/2002 | US20020192599 Method for fabricating plate type magnetic resistance sensor chip element |
| 12/19/2002 | US20020191451 Magnetoresistance effect device |
| 12/19/2002 | US20020191437 Magnetic memory device |
| 12/19/2002 | US20020191355 Magnetoresistive element and method for producing the same |
| 12/19/2002 | US20020191354 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus |
| 12/19/2002 | US20020191353 Magnetic sensing element having no variation in track width and capable of properly complying with track narrowing |
| 12/19/2002 | US20020191348 Dual spin-valve thin-film magnetic element |
| 12/19/2002 | US20020190713 Magnetic device |
| 12/19/2002 | US20020190291 Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same |
| 12/19/2002 | DE10128262A1 Magnetic field detector has an array of magnetoresistive sensors with artificial anti-ferromagnetic reference layers and magnetic layers arranged to suppress domain formation and increase resistance to external fields |
| 12/19/2002 | DE10128135A1 Magneto-resistive layer arrangement used in a GMR sensor element, an AMR sensor element or a gradiometer comprises a non-magnetic electrically conducting intermediate layer arranged between magnetic layers, and a hard magnetic layer |
| 12/18/2002 | EP1267427A1 Method for fabricating a plurality of magnetic sensors |
| 12/18/2002 | EP1266412A1 Method and device for transferring spin-polarized charge carriers |
| 12/18/2002 | EP1119860B1 Magnetoresistive memory having improved interference immunity |
| 12/18/2002 | EP1112575B1 Magnetoresistive element and use of same as storage element in a storage system |
| 12/18/2002 | EP1105890B1 Magnetoresistive element and the use thereof as storage element in a storage cell array |
| 12/18/2002 | CN1385905A Magnetic RAM of transistor with vertical structure and making method thereof |
| 12/18/2002 | CN1096690C Magnetoresistance material and magnetoresistor film |
| 12/17/2002 | US6496338 Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias |