| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 10/19/2000 | WO2000062282A1 Highly sensitive spin valve heads using a self-aligned demag-field balance element |
| 10/18/2000 | EP1045403A2 Magnetoresistance device |
| 10/18/2000 | CN1270696A Memory location arrangement and its use as a magnetic ram and as an associative memory |
| 10/18/2000 | CN1057627C Magnetoresistive spin valve sensor having a nonmagnetic back layer |
| 10/17/2000 | US6134139 Magnetic memory structure with improved half-select margin |
| 10/17/2000 | US6134138 Method and apparatus for reading a magnetoresistive memory |
| 10/17/2000 | US6134091 Spin-valve magneto-resistive head with horizontal type structure |
| 10/12/2000 | WO2000060601A1 Device for weighting the cell resistances in a magnetoresistive memory |
| 10/11/2000 | EP1042684A1 Magnetic field sensor with perpendicular to layer sensitivity, comprising a giant magnetorisistance material or a spin tunnel junction |
| 10/10/2000 | US6130814 Current-induced magnetic switching device and memory including the same |
| 10/10/2000 | US6130599 Electrical current sensing apparatus |
| 10/10/2000 | US6129957 First annealing for setting a first antiferromagnetic, a second annealing for resetting a second antiferromagnetic layer, third annealing with no exteranl applied field at high temperature to rapair first exchange, enchance second |
| 10/05/2000 | WO2000059051A1 Microelectronic device with tunnel junctions, memory network sensor comprising such devices |
| 10/04/2000 | EP1041391A2 Magneto-impedance element made of thin film magnetic material |
| 10/04/2000 | CN1268774A High-strength macroreluctance conductive polymerized film and its preparation method |
| 10/04/2000 | CN1268735A Anti-parallel pinning read magnetic head having higher giant magnetio-resistance |
| 10/03/2000 | US6128239 MRAM device including analog sense amplifiers |
| 10/03/2000 | US6128167 Spin-valve magnetoresistive element |
| 09/28/2000 | WO2000057423A1 Storage cell array and method for the production thereof |
| 09/27/2000 | EP1039560A2 A magnetoresistive element and a method of producing a crystal structure with colossal magnetoresistivity |
| 09/27/2000 | EP1039490A1 Pinning layer for magnetic devices |
| 09/27/2000 | EP1038325A1 Fabricating an mtj with low areal resistance |
| 09/27/2000 | EP1038324A1 Low resistance magnetic tunneling junction |
| 09/27/2000 | EP1038299A1 Low switching field magnetic tunneling junction usable for multi-state magnetic memory cell |
| 09/26/2000 | US6124711 Magnetic sensor using tunnel resistance to detect an external magnetic field |
| 09/26/2000 | US6123781 Method of controlling magnetic characteristics of spin-valve magnetoresistive element and of magnetic head with the element |
| 09/21/2000 | WO2000030077A9 Differential vgmr sensor |
| 09/20/2000 | EP1037289A2 Semiconductor magnetoresistance device, making method and magnetic sensor |
| 09/20/2000 | EP0937302A4 Spin dependent tunneling memory |
| 09/19/2000 | US6122151 Spin-valve magnetoresistive element |
| 09/12/2000 | US6118624 Magneto-resistance effect element having a magnetic biasing film |
| 09/12/2000 | US6118621 Magnetoresistance effect head having a pair of protrusions, steps or depressions between the detecting and nondetecting areas for improved off-track characteristics |
| 09/12/2000 | US6117697 Depositing an ultrathin active film responsive to changes in magnetic field energy onto a compliant layer of periodic table group 3-5 semiconductor material on semiconductor substrate, which is capable of retaining strain energy |
| 09/08/2000 | WO2000052771A1 Storage cell arrangement and method for producing the same |
| 09/08/2000 | WO2000052489A1 Magnetic sensor and its production method, ferromagnetic tunnel junction device and its production method, and magnetic head using the same |
| 09/08/2000 | WO2000052424A1 Hall sensor with a reduced offset signal |
| 09/07/2000 | DE19908473A1 Hall-Sensor mit reduziertem Offset-Signal Hall sensor with reduced offset signal |
| 09/06/2000 | EP1033764A2 Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element |
| 09/05/2000 | US6115224 Spin-valve type thin film element and its manufacturing method |
| 09/05/2000 | US6114850 Antiferromagnetic(afm) layer of nickel, cobalt, and/or iron oxides, fixed magnetic layer, nonmagnetic, and free magnetic layer, laminated onto base layer; between base layer and afm layer is adhesive layer of given metals, alloys, or oxides |
| 09/05/2000 | US6114056 Magnetic element, and magnetic head and magnetic memory device using thereof |
| 09/05/2000 | US6112402 Method for manufacturing magnetoresistive sensor |
| 08/31/2000 | WO2000002006A3 Method for regulating the magnetization of the bias layer of a magnetoresistive sensor element, sensor element or sensor element system processed according to said method and sensor element and sensor substrate suitable for the implementation of said method |
| 08/29/2000 | US6111784 Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element |
| 08/29/2000 | US6111782 Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same |
| 08/29/2000 | US6111781 Magnetic random access memory array divided into a plurality of memory banks |
| 08/29/2000 | US6111729 Magnetoresistance effect element |
| 08/29/2000 | US6111722 Magnetoresistance effect element having improved biasing films, and magnetic head and magnetic recording device using the same |
| 08/29/2000 | US6110751 Tunnel junction structure and its manufacture and magnetic sensor |
| 08/16/2000 | EP1028474A2 Hall effect ferromagnetic random access memory device and its method of manufacture |
| 08/15/2000 | US6104633 Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices |
| 08/15/2000 | US6104275 Magnetoresistive element |
| 08/15/2000 | US6103545 Process for making a magnetoresistive magnetic sensor and sensor obtained using this process |
| 08/15/2000 | US6103406 Magnetic tunnel device |
| 08/10/2000 | WO2000013205A3 Sensor for measuring a magnetic field |
| 08/09/2000 | EP1025681A1 Magnetically coupled signal isolator using a faraday shielded mr or gmr receiving element |
| 08/09/2000 | EP1025448A1 Monolithic magnetic sensor having externally adjustable temperature compensation |
| 08/08/2000 | US6101072 Yoke type or flux guide type magnetoresistive head in which the yoke or flux guide is provided to the magnetic resistive element via an interposed soft magnetic layer |
| 08/08/2000 | US6101071 MR film with upper and lower magnetic layers with resistivity greater than that of MR film magnetic layers |
| 08/01/2000 | US6097626 MRAM device using magnetic field bias to suppress inadvertent switching of half-selected memory cells |
| 07/27/2000 | DE19902188A1 Anordnung zur Drehzahlmessung Arrangement for measuring the speed |
| 07/26/2000 | EP1022568A1 Device for determining rotational speed |
| 07/26/2000 | EP0744076B1 Magnetoresistive structure with alloy layer |
| 07/25/2000 | US6093445 Microscopic element manufacturing method and equipment for carrying out the same |
| 07/20/2000 | WO2000042614A1 Read/write architecture for a mram |
| 07/19/2000 | EP1019913A1 Memory cell arrangement |
| 07/18/2000 | US6090498 Device including pinning layer (antiferromagnetic layer) of ruthenium-manganese ternary alloy with controlled impurity concentrations |
| 07/18/2000 | US6090480 Magnetoresistive devices for reading out data recorded on magnetic memory media, magnetoresistive sensors, and magnetic memory systems |
| 07/13/2000 | WO2000041250A1 Spin dependent tunneling sensor |
| 07/13/2000 | WO2000041180A1 Vertically integrated magnetic memory |
| 07/13/2000 | WO2000040987A1 Utilization of a magneto-resistive material |
| 07/13/2000 | DE19840823C1 Magnetoresistives Element und dessen Verwendung als Speicherelement in einer Speicherzellenanordnung The magnetoresistive element and its use as memory element in a memory cell arrangement |
| 07/13/2000 | CA2358205A1 Utilization of a magneto-resistive material |
| 07/13/2000 | CA2358200A1 Vertically integrated magnetic memory |
| 07/12/2000 | EP1018118A1 Mram with shared word and digit lines |
| 07/12/2000 | CN1259500A Low temp. low magnetic field large magnetic resistance effect oxide material and prepn. method thereof |
| 07/11/2000 | US6088195 Magnetoresistance effect element |
| 07/11/2000 | US6087827 Incremental sensor of speed and/or position for detecting low and null speeds |
| 07/11/2000 | US6087026 Comprising magnetoresistive film and an adjacently formed biasing soft magnetic film composed of iron-metal-nitride |
| 07/11/2000 | US6086727 Movable flux regulator disposed between target and wafer for partially blocking portion of target material from being deposited on said wafer during deposition of target material, wherein movable flux regulator is tiltable in x,y, and z-axis |
| 07/05/2000 | EP1017100A1 Three-dimensional device |
| 07/05/2000 | EP1016087A1 Memory location arrangement and its use as a magnetic ram and as an associative memory |
| 07/05/2000 | EP0809846B1 Nonvolatile magnetoresistive memory with fully closed-flux operation |
| 07/04/2000 | US6084405 Transducer utilizing giant magnetoresistance effect and having a ferromagnetic layer pinned in a direction perpendicular to a direction of a signal magnetic field |
| 07/04/2000 | US6083764 Method of fabricating an MTJ with low areal resistance |
| 07/04/2000 | US6083632 Antiferromagnetic layers composed of manganese intermetallic and/or alloy |
| 06/29/2000 | WO2000038192A1 Magnetic random access memory with a reference memory array |
| 06/29/2000 | WO2000038191A1 Method of fabricating a magnetic random access memory |
| 06/29/2000 | WO2000037715A1 Bismuth thin film structure and method of construction |
| 06/28/2000 | EP1012617A1 Magnetic multilayer sensor |
| 06/27/2000 | US6081445 Method to write/read MRAM arrays |
| 06/22/2000 | WO2000036429A1 Giant magnetoresistive magnetic field sensor |
| 06/22/2000 | CA2292937A1 Hall effect ferromagnetic random access memory device and its method of manufacture |
| 06/21/2000 | CN1053759C Thin-belt magnetic resistance material with Co-Cu base and doped particles and manufacture thereof |
| 06/20/2000 | US6077618 Multilayer; laminated body of magnetic layer and nonmagnetic insulation layer |
| 06/15/2000 | WO2000034946A1 Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor |
| 06/15/2000 | CA2340094A1 Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor |
| 06/14/2000 | CN1256792A 三维器件 3D device |
| 06/13/2000 | US6075437 In-plane magnetoresistance bridge |
| 06/13/2000 | US6075360 Magnetoresistive component having a multilayer strip with a geometrical pattern |