| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 09/25/2001 | US6295225 Magnetic tunnel junction device having an intermediate layer |
| 09/25/2001 | US6295186 Used as a magnetic head, a potentiosensor, an angular sensor |
| 09/20/2001 | US20010022742 Reference layer structure in a magnetic storage cell |
| 09/20/2001 | US20010022373 Magnetic memory element and magnetic memory using the same |
| 09/19/2001 | EP1134815A2 Magnetoresistance effect device, and method for producing the same |
| 09/19/2001 | EP1134743A2 Magneto-resistive device and magneto-resistive effect type storage device |
| 09/18/2001 | US6292389 Magnetic element with improved field response and fabricating method thereof |
| 09/18/2001 | US6291907 Magnetically coupled signal isolator using a faraday shielded MR or GMR receiving element |
| 09/13/2001 | WO2001067469A1 Magnetic field element having a biasing magnetic layer structure |
| 09/13/2001 | WO2001067460A1 Magnetic device with a coupling layer and method of manufacturing and operation of such device |
| 09/13/2001 | US20010021537 Methods of manufacturing tunnel magnetoresistive element, thin-film magnetic head and memory element |
| 09/13/2001 | US20010021125 Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element |
| 09/13/2001 | US20010021124 Magneto-resistive device and magneto-resistive effect type storage device |
| 09/13/2001 | US20010021089 Magnetoresistive-effect element |
| 09/13/2001 | US20010021088 Magnetoresistive head and magnetic storage apparatus |
| 09/13/2001 | US20010020847 Method for setting a magnetization of a bias layer of a magnetoresistive sensor element, sensor configuration, and sensor substrate |
| 09/13/2001 | DE10009944A1 Arrangement for measuring magnetic field comprises first layer and second layer having electrically conducting antiferromagnetic layer bordering soft magnetic layer |
| 09/12/2001 | EP1132920A2 MRAM device |
| 09/12/2001 | EP1132919A2 Memory cell |
| 09/12/2001 | EP1132918A2 Improved reference layer structure in a magnetic storage cell |
| 09/12/2001 | EP1131606A1 Magnetoresistive sensor having interleaved elements |
| 09/12/2001 | CN1312943A Storage cell array and corresponding production method |
| 09/07/2001 | WO2001065269A1 Assembly for measuring a magnetic field, using a bridge circuit of spin tunnel elements and a production method for the same |
| 09/06/2001 | DE10009173A1 Messvorrichtung zur berührungslosen Erfassung eines ferromagnetischen Gegenstandes Measuring apparatus for contactless detection of a ferromagnetic object |
| 09/05/2001 | EP1129495A1 Integrated hall device |
| 09/05/2001 | EP1129366A1 Magnetoresistive sensor or memory elements with decreased magnetic switch field |
| 09/05/2001 | CN2446664Y Metal thin film magnetic sensitive resistance |
| 09/04/2001 | USH1990 Magnetic shunt device for hall effect applications |
| 09/04/2001 | US6285581 MRAM having semiconductor device integrated therein |
| 08/30/2001 | WO2001063213A1 Measuring device for contactlessly detecting a ferromagnetic object |
| 08/30/2001 | US20010018135 Multilayer; antiferromagnetic layer, magnetic layer, nonmagnetic layer |
| 08/30/2001 | US20010017753 Magnetoresistive effect film, mangetoresistive effect sensor utilizing the same and magnetic storage device |
| 08/30/2001 | DE10046864A1 Magnetsensor, Magnetkopf und Magnetplattenvorrichtung Magnetic sensor, magnetic head and magnetic disk device |
| 08/28/2001 | US6282069 Magnetoresistive element having a first antiferromagnetic layer contacting a pinned magnetic layer and a second antiferromagnetic layer contacting a free magnetic layer |
| 08/28/2001 | US6282068 Antiparallel (AP) pinned read head with improved GMR |
| 08/28/2001 | US6281538 Multi-layer tunneling device with a graded stoichiometry insulating layer |
| 08/23/2001 | US20010015878 Magnetic sensor and magnetic storage using same |
| 08/23/2001 | US20010015877 Magnetic sensor and method of manufacturing the same |
| 08/22/2001 | EP1126531A2 Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same |
| 08/22/2001 | EP1126469A2 Magnetic memory |
| 08/22/2001 | EP1126468A2 MRAM device including differential sense amplifiers |
| 08/22/2001 | EP1125288A1 Magnetoresistive devices, giant magnetoresistive devices and methods for making same |
| 08/22/2001 | CN1309301A Magnetic element with double magnetic state and mfg. method thereof |
| 08/21/2001 | US6278631 Magnetic random access memory array divided into a plurality of memory banks |
| 08/21/2001 | US6278593 Magnetoresistance effect elements and magnetic heads using the tunneling magnetoresistive effect |
| 08/21/2001 | US6278588 Magnetoresistive magnetic field sensor |
| 08/21/2001 | US6277505 Multilayer; ferromagnetic layer, nonmagnetic layer and thin oxide layer |
| 08/16/2001 | US20010014412 Magnetoresistive film, magnetoresistive head, information regeneration apparatus and magnetoresistive film manufacture method |
| 08/16/2001 | US20010013999 Magnetoresistive element and magnetic recording apparatus |
| 08/16/2001 | US20010013776 Magnetic field sensor with perpendicular axis sensitivity, comprising a giant magnetoresistance material of a spin tunnel junction |
| 08/16/2001 | US20010013311 Epitaxial compound structure and device comprising same |
| 08/16/2001 | EP1124273A2 Magnetoresistive multilayer and head, manufacturing method |
| 08/16/2001 | EP1124272A1 Magnetoresistant device, method for manufacturing the same, and magnetic component |
| 08/16/2001 | EP1124271A1 Magnetic sensor and method for fabricating the same |
| 08/16/2001 | DE19949713C2 Magnetoresistives Schichtsystem The magnetoresistive layer system |
| 08/15/2001 | CN1308317A Magnetoresistive element and magnetic memory device |
| 08/14/2001 | US6275411 Spin dependent tunneling memory |
| 08/14/2001 | US6275033 Magnetic field sensor having nickel oxide and cobalt containing ferromagnetic layers |
| 08/09/2001 | US20010012228 Differential sense amplifiers for resistive cross point memory cell arrays |
| 08/09/2001 | US20010012188 Spin-valve thin-film magnetic element and method for making the same |
| 08/09/2001 | US20010012187 Synthetic antiferromagnetic pinned layer with fe/fesi/fe system |
| 08/09/2001 | US20010012185 A magnetoresistance effect element and a magnetic head employing a magnetoresistance effect element |
| 08/09/2001 | DE10102933A1 Magnetsensor und Magnetspeicher, bei dem derselbe verwendet wird Magnetic sensor and magnetic memory, in which the same is used |
| 08/08/2001 | EP1122749A2 Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film |
| 08/08/2001 | EP1122719A2 Tunneling magnetoresistive device and method for manufacturing the same |
| 08/07/2001 | US6272041 MTJ MRAM parallel-parallel architecture |
| 08/07/2001 | US6271998 Thin film shielded magnetic read head device |
| 08/07/2001 | US6271744 Current sensing arrangement with encircling current-carrying line and ferromagnetic sheet concentrator |
| 08/07/2001 | US6271663 Rotation detector operable to measure magnetism direction change |
| 08/07/2001 | US6270633 Comprising: a target, a magnetron magnet, a chimney, a disc shaped dome, a substrate; for depositing a gigantic magneto-resistive film |
| 08/02/2001 | WO2001056090A1 Magnetoresistance effect device and method for manufacturing the same, base for magnetoresistance effect device and method for manufacturing the same, and magnetoresistance effect sensor |
| 08/02/2001 | WO2000079298A3 Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems |
| 08/01/2001 | EP1120790A1 Magnetic memory with structures that prevent disruptions to magnetization in sense layers |
| 08/01/2001 | EP1119860A2 Magnetoresistive memory having improved interference immunity |
| 07/31/2001 | US6269027 Non-volatile storage latch |
| 07/31/2001 | US6267903 Prevention of damage due to static electricity during manufacturing of magnetic head |
| 07/26/2001 | US20010009062 Method of making magnetic resistance element |
| 07/24/2001 | US6265353 Device and method for producing a multilayered material |
| 07/24/2001 | CA2211699C Nonvolatile magnetoresistive memory with fully closed-flux operation |
| 07/18/2001 | EP1117136A1 Ferromagnetic double quantum well tunnel magneto-resistance device |
| 07/18/2001 | EP1117091A2 Magneto-resistive element production method |
| 07/18/2001 | EP1116248A1 Method of manufacturing a magnetic tunnel junction device |
| 07/18/2001 | EP1116226A1 Perishable media information storage mechanism |
| 07/18/2001 | EP1116043A1 Method of manufacturing a magnetic tunnel junction device |
| 07/18/2001 | CN1068689C Multilayer magnetoresistive sensor, and its mfg. method and magnetic memory system |
| 07/17/2001 | US6261646 Magnetic tunnel junction |
| 07/12/2001 | US20010007707 Laminates having a buffer layer and cover layer |
| 07/12/2001 | US20010007532 Magnetic element and magnetic memory device |
| 07/11/2001 | EP1114472A2 Sensor for measuring a magnetic field |
| 07/11/2001 | CN1303133A Composite nm crystal-giant magnet impedance material and its preparing process |
| 07/11/2001 | CN1303098A MTJ stack type unit storage detecting method and device |
| 07/10/2001 | US6258470 Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film |
| 07/10/2001 | US6258283 Method of making magnetic resistance element |
| 07/05/2001 | US20010006446 Thin- film magnetic head with low barkhausen noise and floating-type magnetic head therewith |
| 07/05/2001 | US20010006445 Method of making a multilayered pinned layer structure for improved coupling field and GMR for spin valve sensors |
| 07/04/2001 | EP1112575A1 Magnetoresistive element and use of same as storage element in a storage system |
| 07/03/2001 | US6256247 Differential sense amplifiers for resistive cross point memory cell arrays |
| 07/03/2001 | US6256224 Write circuit for large MRAM arrays |
| 07/03/2001 | US6256223 Current-induced magnetic switching device and memory including the same |
| 07/03/2001 | US6256222 Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same |